ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB90037m-AAS/A1
OPTION G
7.62
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll VDE 0884 approval pending
lEN60950 approval pending
DESCRIPTION
The CNX62A optically coupled isolator
consists of an infrared light emitting diode and
a NPN silicon photo transistor in a standard 6
pin dual in line plastic package with the base
pin unconnected.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Current Transfer Ratio (40% min)
lLow Saturation Voltage suitable for TTL
integrated circuits
lHigh BVCEO (50V min)
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lBase pin unconnected for improved noise
immunity in high EMI environment
APPLICATIONS
lDC motor controllers
lIndustrial systems controllers
lSignal transmission between systems of
different potentials and impedances
0.26
0.5
1
3 4
6
Dimensions in mm
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
0.26
6.62
2 5
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 50V
Emitter-collector Voltage BVECO 6V
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
0.5
CNX62A
10.46
9.86
0.6
0.1 1.25
0.75
DB90037m-AAS/A1
7/12/00
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 10mA
Reverse Voltage (VR)6VIR = 10µA
Reverse Current (IR)10 µAVR = 6V
Output Collector-emitter Breakdown (BVCEO)50 VIC = 1mA
( Note 2 )
Emitter-collector Breakdown (BVECO) 6 VIE = 100µA
Collector-emitter Dark Current (ICEO)50 nA VCE = 10V
Coupled Current Transfer Ratio (IC / IF )
(Note 2) 0.4 10mA IF , 0.4V VCE
1.5 10mA IF , 5V VCE
Collector-emitter Saturation VoltageVCE (SAT) 0.4 V10mA IF , 4mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Turn-on Time ton 3µsVCC = 5V , IC = 2mA ,
Turn-off Time toff 3µsRL = 100Ω
Turn-on Time ton 12 µsVCC = 5V , IC = 2mA ,
Turn-off Time toff 12 µsRL = 1kΩ
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
DB90037m-AAS/A1
7/12/00
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation P C (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
100
0
0.5
1.0
1.5 IF = 10mA
VCE = 0.4V
Forward current I F (mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
70
80
1 2 5 10 20 50
0
0.8
1.2
1.6
2.0
2.4
0.4
2.8
VCE = 0.4V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current I C (mA)
0 2 4 6 8 10
0
10
20
30
40
50 TA = 25°C
IF = 5mA
10
15
20
30
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Collector-emitter saturation voltage V CE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 10mA
IC = 4mA
-30 0 25 50 75 100
Ambient temperature TA ( °C )
