MPS2907A SWITCHING CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 50 ns VCE=-30V IC=-150mA, IB1=-15mA (See Turn On Circuit) Turn Off Time toff 110 ns VCE=-6V, IC=-150mA IB1= IB2=-15mA (See Turn Off Circuit) TURN ON TIME TEST CIRCUIT -30V 200 PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 SEPTEMBER 94 FEATURES * 60 Volt VCEO * Fast switching C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 mA Power Dissipation at Tamb=25C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). Scope: Rise Time < 5 ns 1K -16V 50 Pulse width <200ns TURN OFF TIME TEST CIRCUIT 15V 1K 1K 0 -30V -6V 37 Scope: Rise Time < 5 ns SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10 A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10 A, IC=0 Collector-Emitter Cut-Off Current ICEX -50 nA VCE=-30V, VBE=-0.5V Collector Cut-Off Current ICBO -10 -10 A nA VCB=-50V, IE=0 VCB=-50V, IE=0, Tamb=150C Base Cut-Off Current IB -50 nA VCE=-30V, VBE=-0.5V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -1.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.3 -2.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Static Forward Current Transfer Ratio hFE Transition Frequency fT 50 Pulse width <200ns 75 100 100 100 50 IC=-0.1mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V* IC=-500mA, VCE=-10V* 300 200 MHz IC=-50mA, VCE=-20V f=100MHz *Measured under pulsed conditions. Pulse width=300ms. Duty cycle 2% 3-71 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER 0 MPS2907A 3-70 MPS2907A SWITCHING CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 50 ns VCE=-30V IC=-150mA, IB1=-15mA (See Turn On Circuit) Turn Off Time toff 110 ns VCE=-6V, IC=-150mA IB1= IB2=-15mA (See Turn Off Circuit) TURN ON TIME TEST CIRCUIT -30V 200 PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 SEPTEMBER 94 FEATURES * 60 Volt VCEO * Fast switching C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 mA Power Dissipation at Tamb=25C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). Scope: Rise Time < 5 ns 1K -16V 50 Pulse width <200ns TURN OFF TIME TEST CIRCUIT 15V 1K 1K 0 -30V -6V 37 Scope: Rise Time < 5 ns SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10 A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10 A, IC=0 Collector-Emitter Cut-Off Current ICEX -50 nA VCE=-30V, VBE=-0.5V Collector Cut-Off Current ICBO -10 -10 A nA VCB=-50V, IE=0 VCB=-50V, IE=0, Tamb=150C Base Cut-Off Current IB -50 nA VCE=-30V, VBE=-0.5V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -1.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.3 -2.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Static Forward Current Transfer Ratio hFE Transition Frequency fT 50 Pulse width <200ns 75 100 100 100 50 IC=-0.1mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V* IC=-500mA, VCE=-10V* 300 200 MHz IC=-50mA, VCE=-20V f=100MHz *Measured under pulsed conditions. Pulse width=300ms. Duty cycle 2% 3-71 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER 0 MPS2907A 3-70