PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 SEPTEMBER 94
FEATURES
* 60 Volt VCEO
* Fast switching
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC-600 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -60 V IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60 V IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IE=-10µA, IC=0
Collector-Emitter
Cut-Off Current
ICEX -50 nA VCE
=-30V, VBE
=-0.5V
Collector Cut-Off
Current
ICBO -10
-10
nA
µA
VCB
=-50V, IE=0
VCB
=-50V, IE=0, Tamb
=150°C
Base Cut-Off Current IB-50 nA VCE
=-30V, VBE
=-0.5V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.4
-1.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat) -1.3
-2.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Static Forward
Current Transfer
Ratio
hFE 75
100
100
100
50
300
IC=-0.1mA, VCE
=-10V
IC=-1mA, VCE
=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE
=-10V*
IC=-500mA, VCE
=-10V*
Transition
Frequency
fT200 MHz IC=-50mA, VCE=-20V
f=100MHz
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2%
E-Line
TO92 Compatible
C
B
E
MPS2907A
3-70
SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Output Capacitance Cobo 8pFV
CB
=-10V, IE=0,
f=100KHz
Input Capacitance Cibo 30 pF VBE
=-2V, IC=0
f=100KHz
Turn On Time ton 50 ns VCE
=-30V
IC=-150mA, IB1=-15mA
(See Turn On Circuit)
Turn Off Time toff 110 ns VCE
=-6V, IC=-150mA
IB1= IB2=-15mA
(See Turn Off Circuit)
MPS2907A
Pulse width
<200ns
-16V
-30V
1K
Ω
50
Ω
200
Ω
Scope:
Rise Time < 5 ns
TURN ON TIME TEST CIRCUIT
0
Scope:
Rise Time < 5 ns
Pulse width
<200ns
1K
Ω
1K
Ω
37
Ω
-6V15V
50
Ω
-30V
TURN OFF TIME TEST CIRCUIT
0
3-71
PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 SEPTEMBER 94
FEATURES
* 60 Volt VCEO
* Fast switching
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC-600 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -60 V IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60 V IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IE=-10µA, IC=0
Collector-Emitter
Cut-Off Current
ICEX -50 nA VCE
=-30V, VBE
=-0.5V
Collector Cut-Off
Current
ICBO -10
-10
nA
µA
VCB
=-50V, IE=0
VCB
=-50V, IE=0, Tamb
=150°C
Base Cut-Off Current IB-50 nA VCE
=-30V, VBE
=-0.5V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.4
-1.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat) -1.3
-2.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Static Forward
Current Transfer
Ratio
hFE 75
100
100
100
50
300
IC=-0.1mA, VCE
=-10V
IC=-1mA, VCE
=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE
=-10V*
IC=-500mA, VCE
=-10V*
Transition
Frequency
fT200 MHz IC=-50mA, VCE=-20V
f=100MHz
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2%
E-Line
TO92 Compatible
C
B
E
MPS2907A
3-70
SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Output Capacitance Cobo 8pFV
CB
=-10V, IE=0,
f=100KHz
Input Capacitance Cibo 30 pF VBE
=-2V, IC=0
f=100KHz
Turn On Time ton 50 ns VCE
=-30V
IC=-150mA, IB1=-15mA
(See Turn On Circuit)
Turn Off Time toff 110 ns VCE
=-6V, IC=-150mA
IB1= IB2=-15mA
(See Turn Off Circuit)
MPS2907A
Pulse width
<200ns
-16V
-30V
1K
Ω
50
Ω
200
Ω
Scope:
Rise Time < 5 ns
TURN ON TIME TEST CIRCUIT
0
Scope:
Rise Time < 5 ns
Pulse width
<200ns
1K
Ω
1K
Ω
37
Ω
-6V15V
50
Ω
-30V
TURN OFF TIME TEST CIRCUIT
0
3-71
