Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Mar. 2002
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,
trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
BCR1AM
•IT (RMS) ........................................................................1A
•V
DRM ....................................................................... 600V
•I
FGT !, IRGT !, IRGT #.............................. 5mA (3mA) ✽5
•IFGT #.....................................................................10mA
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=56°C ✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
1.0
10
0.41
1
0.1
6
1
–40 ~ +125
–40 ~ +125
0.23
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class
12
600
720
Unit
V
V
MAXIMUM RATINGS
✽1.Gate open.
TYPE
NAME
VOLTAGE
CLASS
2
1
3
1
2
3
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
φ5.0 MAX
4.4
5.0 MAX
12.5 MIN
3.9 MAX
1.3
1.25 1.25
CIRCUMSCRIBE
CIRCLE
φ0.7
132
OUTLINE DRAWING
Dimensions
in mm
JEDEC : TO-92
Mar. 2002
4.42.40.80.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
T
C
= 25°C
10
0
23 5710
1
4
2
23 5710
2
44
6
8
10
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
VFGT #
IFGT !
IRGT !
IRGT #
IFGT #
VGD
Rth (j-c)
(dv/dt)c
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=1.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽3
Tj=125°C
Unit
mA
V
V
V
V
V
mA
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
!
@
#
$
!
@
#
$
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
ELECTRICAL CHARACTERISTICS
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–0.5A/ms
3. Peak off-state voltage
VD=400V
Limits
Min.
—
—
—
—
—
—
—
—
—
—
0.1
—
2
Max.
1.0
1.6
2.0
2.0
2.0
2.0
5
5✽5
5✽5
10
—
50
—
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
PERFORMANCE CURVES
✽4
✽5.High sensitivity (IGT ≤ 3mA) is also available. (IGT item 1)
Mar. 2002
10
–1
2310
0
5710
1
23 5710
2
23 5710
3
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
V
GM
= 6V
P
GM
=
1W
P
G(AV)
= 0.1W
I
GM
= 1A
V
GD
= 0.1V
I
FGT III
I
FGT I
I
RGT I
I
RGT III
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
V
RGT III
, V
FGT III
V
FGT I
, V
RGT I
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
I
RGT III,
I
FGT III
I
FGT I,
I
RGT I
TYPICAL EXAMPLE
2.0
1.6
1.2
0.8
0.4
02.00 0.4 0.8 1.2 1.6
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
360°
CONDUCTION
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
10
1
2310
–1
5710
0
23 5710
1
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
2310
2
5710
3
23 5710
4
23 5710
5
JUNCTION TO AMBIENT
JUNCTION TO CASE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
Mar. 2002
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
TYPICAL EXAMPLE
14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
TYPICAL EXAMPLE
160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NATURAL CONVECTION
NO FINS
RESISTIVE,
INDUCTIVE
LOADS
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
140–60 –20 20 60 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–40 0 40 80 120
;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;
T
2
+, G+
T
2
–, G–
T
2
–, G+
T
2
+, G–
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
2310
0
5710
1
23 5710
2
23 5710
3
120
0
20
40
60
80
100
140
160 TYPICAL EXAMPLE
Tj = 125°C
I QUADRANT
III QUADRANT
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
Mar. 2002
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
IRGT III
IFGT I
IRGT I
IFGT III
TYPICAL EXAMPLE
10
1
7
5
3
2
10
–1
23 5710
0
10
0
7
5
3
2
23 5710
1
4
4
44
10
–1
TC = 125°C
IT = 1A
τ = 500µs
VD = 200V
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
6Ω6Ω
6Ω6Ω
6V 6V
6V 6V
RGRG
RGRG
A
V
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
TEST PROCEDURE 4
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
