PF5102 - ON SEMICONDUCTOR

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PF5102 — N-Channel Switch

PF5102 Rev. B0 1

December 2011

PF5102

N-Channel Switch

Features

• This device is designed for low level analog switching, sample and

hold circuits and chopper stabilized amplifiers.

• Sourced from process 51.

• See J111 for characteristics.

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applicatio ns involving pulsed or low duty cycle

operations.

Thermal Characteristics Ta = 25°C unless otherwise noted

Electrical Characteristics Ta = 25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.0%

Symbol ParameterValueUnits

VDG Drain-Gate Voltage 40 V

VGS Gate-Source Voltage -40 V

IGF Forward Gate Current 50 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Symbol Parameter Max. Units

PDTotal Device Dissipation

Derate above 25°C625

5.0 mW

mW/°C

RθJC Thermal Resistance, Junction to Case 125 °C/W

RθJA Thermal Resistance, Junction to Ambient 357 °C/W

Symbol Parameter Test Condition Min. Max. Units

Off Characteristics

V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0 -40 V

IGSS Gate Reverse Current VGS = -15V, VDS = 0

VGS = -15V, VDS = 0, TA = 125°C-1.0

-0.2 nA

μA

VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 1.0nA -0.7 -1.6 V

VGS(f) Gate-Source Forward Voltage IG = 1.0mA, VDS = 0 1.0 V

On Characteristics

IDSS Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 4.0 20 mA

Small Signal Characteristics

gfs Forward Transfer Conductance VDS = 15V, VGS = 0, f = 1.0KHz 11,000 μmhous

goss Output Conductance VDS = 15V, ID = 500μA, f = 1.0KHz 25 μmhous

Ciss Input Capacitance VDG = 15V, VGS = 0, f = 1.0MHz 16 pF

Crss Reverse Transfer Capacitance VDG = 15V, VGS = 0, f = 1.0MHz 6 pF

TO-92

1. Drain 2. Source 3. Gate

PF5102 — N-Channel Switch

PF5102 Rev. B0 2

Physical Dimension

TO-92

Dimensions in Millimeters

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The datasheet is for reference information only. Rev. I60

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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

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