©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE350
..PNP Epitaxial Silicon Transistor
Absolute Maximu m Rating s TC=25°C u nless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 300 V
VCEO Collector-Emitter Voltage - 300 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current - 500 mA
PC Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parame ter Test Condition Min. Max. Uni ts
BVCEO Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 -300 V
ICBO Collector Cut-off Current VCB = - 300V, IE = 0 -100 µA
IEBO Emitter Cut-off Current VBE = - 3V, IC = 0 -100 µA
hFE DC Current Gain VCE = - 10V, IC = - 50mA 30 240
MJE350
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE340
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
MJE350
Rev. A1, February 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-1 -10 -100 -1000
1
10
100
1000
VCE = 1 0V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-10 -100 -1000
-10
-100
-1000
-10000
500µs
100
µs
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE350
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. G
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