2005. 3. 14 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB688B
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 1
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 45 50W Audio Frequency Amplifier Output Stage.
Complementary to KTD718B.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE Classification R:55 110, O:80 160
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -120 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-10 A
Base Current IB-1 A
Collector Power Dissipation (Tc=25 )PC80 W
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -10 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -120 - - V
DC Current Gain hFE (Note) VCE=-5V, IC=-1A 55 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-5A - - -1.5 V
Transition Frequency fTVCE=-5V, IC=-1A - 10 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 280 - pF