BLA6G1011L-200RG,1 - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

200 W LDMOS power tran sistor for avionics applications a t frequencies from 1030 MHz to

1090 MHz.

1.2 Features and benefits

Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply

voltage of 28 V and an IDq of 100 mA:

Output power = 200 W

Power gain = 20 dB

Efficiency = 65 %

Easy power control

Integrated ESD protection

Enhanced ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (1030 MHz to 1090 MHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances

(RoHS)

1.3 Applications

Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.

BLA6G1011-200R;

BLA6G1011L(S)-200RG

Power LDMOS transistor

Rev. 4 — 9 November 2011 Product data sheet

Table 1. Test information

Typical RF performance at Tcase = 25



Test signal f VDS PLGpDtrtf

(MHz) (V) (W) (dB) (%) (ns) (ns)

Typical RF performance in a class-AB production test circuit for SOT502A

pulsed RF 1030 to 1090 28 200 20 65 10 6

Typical RF performance in a Gullwing application for SOT502C and SOT502D

pulsed RF 1030 to 1090 28 200 20 65 15 6

Product data sheet Rev. 4 — 9 November 2011 2 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BLA6G1011-200R (SOT502A)

1drain

2gate

3source [1]

BLA6G1011L-200RG (SOT502D)

1drain

2gate

3source [1]

BLA6G1011LS-200RG (SOT502C)

1drain

2gate

3source [1]

sym112

Table 3. Ordering information

Type number Package

Name Description Version

BLA6G1011-200R - flanged LDMOST ceramic package; 2 mounting

holes; 2 leads SOT502A

BLA6G1011L-200RG - eared flanged LDMOST ceramic package; 2

mounting holes; 2 leads SOT502D

BLA6G1011LS-200RG - earless flanged LDMOST ceramic package; 2 leads SOT502C

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +13 V

Product data sheet Rev. 4 — 9 November 2011 3 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

5. Thermal characteristics

6. Characteristics

IDdrain current - 49 A

Tstg storage temperature 65 +150 C

Tjjunction temperature - 225 C

Table 4. Limiting values …con tinued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 5. Thermal characteristics

Symbol Parameter Conditions Type Typ Unit

Zth(j-c) transient thermal impedance

from junction to case Tcase =25C;

tp= 50 s;

=2%

BLA6G1011-200R 0.085 K/W

BLA6G1011L-200RG 0.065 K/W

BLA6G1011LS-200RG 0.065 K/W

Table 6. DC characteristics

Tj = 25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown

voltage VGS =0V; I

D=0.9mA 65 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 270 mA 1.4 2.0 2.4 V

VGSq gate-source quiescent voltage VDS =28 V;

ID= 1620 mA 1.7 2.2 2.7 V

IDSS drain leakage current VGS =0V; V

DS =28V - - 4.2 A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V 40 48 - A

IGSS gate leakage current VGS =11V; V

DS = 0 V - - 420 nA

gfs forward transconductance VDS =10V; I

D=9.45A 11 18 26 S

RDS(on) drain-source on-state

resistance VGS =V

GS(th) + 3.75 V;

ID=9.45A 0.012 0.07 0.093 

Crs feedback capacitance VGS =0V; V

DS =28V;

f= 1MHz -3-pF

Table 7. RF characteristics

Test signal: Pulsed RF; tp = 50





= 2 %; VDS =28V; I

Dq = 100 mA; Tcase = 25



C; unless

otherwise specified; in a class-AB production test circuit for straight leads.

Symbol Parameter Conditions Min Typ Max Unit

PLoutput power 200 - - W

Gppower gain PL = 200 W 18 20 - dB

RLin input return loss PL = 200 W - 10 8dB

Ddrain efficiency PL = 200 W 58 65 - %

trrise time PL = 200 W - 10 20 ns

tffall time PL = 200 W - 6 20 ns

Product data sheet Rev. 4 — 9 November 2011 4 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

6.1 Ruggedness in class-AB operation

The BLA6G1011-200R, BLA6G1011L-200RG and BLA6G1011LS-200RG are enhanced

rugged devices and are capable of withstanding a load mismatch corr esponding to

VSWR = 10 : 1 through all phases under the following conditions: tp=50s; =2%;

VDS =28V; I

Dq =100mA; P

L= 200 W; f = 1030 MHz to 1090 MHz.

7. Application information

7.1 Impedance information

Table 8. Typical impedance

Typical values unless otherwise specified.

f ZSZL

MHz  

BLA6G1011-200R

1030 0.57  j0.94 0.80  j0.68

1060 0.70  j1.13 0.84  j0.52

1090 0.80  j1.53 0.86  j0.35

BLA6G1011L-200RG and BLA6G1011LS-200RG

1030 0.69  j2.18 0.84  j0.59

1060 0.86  j2.36 0.85  j0.73

1090 1.12  j2.54 0.86  j0.87

Fig 1. Definition of transis tor imp e danc e

001aaf059

drain

gate

Product data sheet Rev. 4 — 9 November 2011 5 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

7.2 RF performance

VDS = 28 V; tp = 50 s;  = 2 %; IDq = 100 mA.

(1) f = 1030 MHz

(2) f = 1060 MHz

(3) f = 1090 MHz

VDS = 28 V; tp = 50 s;  = 2 %; IDq = 100 mA.

(1) f = 1030 MHz

(2) f = 1060 MHz

(3) f = 1090 MHz

Fig 2. Output power as a function of input power;

typical valu e s Fig 3. Power gain as a function of load power;

typical values

Pi (W)

04312

001aak266

100

150

200

250

(W)

(1)

(2)

(3)

PL (W)

0 250200100 15050

001aak267

(dB)

(1)

(2)

(3)

VDS = 28 V; tp = 50 s;  = 2 %; IDq = 100 mA.

(1) f = 1030 MHz

(2) f = 1060 MHz

(3) f = 1090 MHz

PL = 200 W; VDS = 28 V; tp = 50 s;  = 2 %;

IDq = 100 mA.

Fig 4. Drain efficiency as a func tio n of load power;

typical values Fig 5. Power gain, input return loss and drain

efficiency as function of frequency;

typical values

PL (W)

0 250200100 15050

001aak268

ηD

(%)

(1)

(2)

(3)

f (MHz)

1020 110010801040 1060

001aak269

RLin

(dB)

ηD

(%)

RLin

ηD

Product data sheet Rev. 4 — 9 November 2011 6 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

7.3 Application circuit

Remark: For BLA6G1011-200R with straight leads

[1] American Technical Ceramics type 100A or capacitor of same quality.

[2] American Technical Ceramics type 100B or capacitor of same quality.

See Table 9 for list of components.

Fig 6. Component layout for class-AB application circuit

001aak270

C6 C7

Table 9. List of components

See Figure 6.

Striplines are on a Rogers Duroid 6010 Printed-Circuit Board (PCB);



r = 6.15 F/m;

thickness = 0.64 mm

Component Description Value Remarks

C1, C6 multilayer ceramic chip capacitor 10 FTDK

C2 multilayer ceramic chip capacitor 68 pF [1]

C3 multilayer ceramic chip capacitor 1.5 pF [1]

C4 multilayer ceramic chip capacitor 3.9 pF [1]

C5, C8 multilayer ceramic chip capacitor 30 pF [2]

C7 electrolytic capacitor 470 F; 63 V

R1 SMD resistor 12 1206

Product data sheet Rev. 4 — 9 November 2011 7 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

8. Package outline

Fig 7. Package outline SOT502A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT502A 99-12-28

03-01-10

0 5 10 mm

scale

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

M M

UNIT A

12.83

12.57 0.15

0.08 20.02

19.61 9.53

9.25 19.94

18.92 9.91

9.65

4.72

3.43

cU2

0.25 0.5127.94

1.14

0.89

34.16

33.91

5.33

4.32

3.38

3.12

1.70

1.45

9.50

9.30

inches 0.505

0.495 0.006

0.003 0.788

0.772

19.96

19.66

0.786

0.774 0.375

0.364 0.785

0.745 0.390

0.380

0.186

0.135 0.01 0.021.100

0.045

0.035 1.345

1.335

0.210

0.170 0.133

0.123 0.067

0.057

0.374

0.366

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

w1AB

M M M

Product data sheet Rev. 4 — 9 November 2011 8 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

Fig 8. Package outline SOT502C

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT502C

sot502c_po

11-03-23

11-05-02

inches

max

nom

min

0.185

0.135

0.505

0.495

0.788

0.772

0.786

0.774

0.375

0.365

0.375

0.365

0.536

0.519

0.048

0.031

0.815

0.805

Note

1. Millimeter dimensions are derived from the original inch dimensions.

Earless flanged LDMOST ceramic package; 2 leads SOT502C

0.006

0.004

7°

0°

0.045

0.035

0.008

0.002

0.39

0.38

0.01 0.01

Unit(1)

max

nom

min

4.72

3.43

12.83

12.57

20.02

19.61

19.96

19.66

9.53

9.27

9.53

9.27

13.6

13.2

1.2

0.8

20.70

20.45

Dimensions

0.16

0.10

1EE

7°

0°

θF

1.14

0.89

0.195

0.055

U1U2

9.91

9.65

0.25

0 5 10 mm

scale

detail X

0.4 mm

gauge plane

w2B

Product data sheet Rev. 4 — 9 November 2011 9 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

Fig 9. Package outline SOT502D

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT502D

sot502d_po

11-03-23

11-05-02

inches

max

nom

min

0.185

0.135

0.505

0.495

0.788

0.772

0.786

0.774

0.375

0.365

0.375

0.365

0.536

0.519

0.048

0.031

1.345

1.335

Note

1. Millimeter dimensions are derived from the original inch dimensions.

Eared flanged LDMOST ceramic package; 2 leads; 2 mounting holes SOT502D

0.006

0.004

7°

0°

0.045

0.035

0.008

0.002

0.39

0.38

0.01 0.01

Unit(1)

max

nom

min

4.72

3.43

12.83

12.57

20.02

19.61

19.96

19.66

9.53

9.27

9.53

9.27

13.6

13.2

1.2

0.8

34.16

33.91

Dimensions

0.16

0.10

1EE

7°

0°

θF

1.14

0.89

0.133

0.123

3.38

3.12

0.195

0.055

1.1

27.94

U1U2

9.91

9.65

0.25

0.01

0.25

0 5 10 mm

scale

detail X

0.4 mm

gauge plane

w2B

w1A

Product data sheet Rev. 4 — 9 November 2011 10 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

9. Handling information

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10. Abbreviations

Acronym Description

LDMOS Laterally Diffused Metal-Oxide Semiconductor

LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor

RF Radio Frequency

SMD Surface Mounted Device

VSWR Voltage Standing-Wave Ratio

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLA6G1011-200R_L-200RG_LS-200RG V.4 20111109 Product data sheet BLA6G1011-200R v.3

Modifications: •This document now also describes the products BLA6G1011L-200RG

and BLA6G1011LS-200RG.

BLA6G1011-200R v.3 20100714 Product data sheet - -

Product data sheet Rev. 4 — 9 November 2011 11 o f 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed be tween

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

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Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

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profits, lost savings, business interruption, costs related to the removal or

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Notwithstanding any damages that customer might incur for any reason

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customer for the products described herein shall be limited in accordance

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changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

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malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

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products planned, as well as fo r the planned application and use of

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NXP Semiconductors does not accept any liability rela ted to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet D evelopment This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 4 — 9 November 2011 12 of 13

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qua lified nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever cust omer uses the product for automotive applications beyond

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liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

12.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLA6G1011(L)(S)-200R(G)

Power LDMOS transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 9 November 2011

Document identifier : BLA6G10 11- 2 00 R_ L-200RG_LS-200RG

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Impedance information. . . . . . . . . . . . . . . . . . . 4

7.2 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5

7.3 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 6

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Handling information. . . . . . . . . . . . . . . . . . . . 10

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13