HMC347A v02.0217 SWITCHES - CHIP GaAs pHEMT SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Typical Applications Features This switch is suitable DC - 20 GHz applications: High Isolation: >40 dB @ 20 GHz * Fiber Optics Low Insertion Loss: 2.1 dB @ 20 GHz * Microwave Radio Non-Reflective Design * Military Small Size: 1.22 x 0.85 x 0.1 mm * Space * VSAT General Description Functional Diagram The HMC347A is a broadband non-reflective GaAs pHEMT SPDT MMIC chip. Covering DC to 20 GHz, the switch offers high isolation and low insertion loss. The switch features over 52 dB isolation at lower frequencies and over 40 dB at higher frequencies due to the implementation of on-chip via hole structures. The switch operates using two negative control voltage logic lines of -5/0V, requires no Vee and has no current consumption. The switch operates down to DC. The chip features coplanar I/Os that allow 100% RF testing prior to delivery to the customer. Electrical Specifications, TA = +25 C, With 0/-5V Control, 50 Ohm System Parameter Frequency Insertion Loss DC - 20.0 GHz Isolation 7-1 Min. DC - 10.0 GHz Typ. Max. Units 1.7 2.2 dB 2.1 2.7 dB DC - 10.0 GHz 47 52 dB DC - 20.0 GHz 35 40 dB 9 12 dB Return Loss "On State" DC - 20.0 GHz Return Loss RF1, RF2 "Off State" DC - 20.0 GHz 8 11 dB Input Power for 1 dB Compression 0.5 - 20.0 GHz 22 29 dBm Input Third Order Intercept Two-tone Input Power = +10dBm/tone 0.5 - 20.0 GHz 40 45 dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 20.0 GHz 3 10 ns ns Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC347A v02.0217 GaAs pHEMT SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Insertion Loss Isolation 0 0 ISOLATION (dB) INSERTION LOSS (dB) -10 -1 -2 -3 -20 -30 -40 -50 -4 -60 -70 -5 5 10 15 20 0 25 5 10 '+25 C 15 20 25 FREQUENCY (GHz) FREQUENCY (GHz) '-55 C RF1 '+85 Return Loss RF2 2 0.1 and 1 dB Input Compression Point 0 30 25 P1dB (dBm) RETURN LOSS (dB) -5 -10 -15 20 15 -20 -25 10 0 5 10 15 20 25 0 5 10 FREQUENCY (GHz) RFC 15 20 FREQUENCY (GHz) RF1, 2 On 0.1 dB Compression Point RF1, 2 Off 1 dB Compression Point SWITCHES - CHIP 0 Input Third Order Intercept Point 50 IP3 (dBm) 45 40 35 30 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) +25 C -55 C +85 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 7-2 HMC347A v02.0217 GaAs pHEMT SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Absolute Maximum Ratings RF Input Power (Vctl = -5V) +27 dBm State Bias Condition Control Voltage Range (A & B) +0.5V to -7.5 Vdc Low 0 to -0.2V @ 10 uA Max. Channel Temperature 150 C High -5V@3uA Typ.to -7V@40uA Max.(+-0.5Vdc) Thermal Resistance (Insertion Loss Path) 118 C/W Thermal Resistance (Terminated Path) 200 C/W Storage Temperature -65 to +150 C Operating Temperature -55 to +85 C ESD Sensitivity (HBM) Class 0 ; Passed 150 V Truth Table Control Input Signal Path State A B RFC to RF1 RFC to RF2 High Low ON OFF Low High OFF ON ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing SWITCHES - CHIP 2 Control Voltages Die Packaging Information [1] Standard Alternate WP-8 (Waffle Pack) [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Analog Devices Inc. 7-3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC347A v02.0217 GaAs pHEMT SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Suggested Driver Circuit SWITCHES - CHIP 2 Pad Descriptions Pad Number Function Description 1, 4, 7 RF1, RFC, RF2 This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if the RF line potential is not equal to 0V. 2, 5, 8, 10 CTRLA See truth table and control voltage table. 3, 6, 9 CTRLB See truth table and control voltage table. GND Die bottom must be connected to RF ground. Interface Schematic For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 7-4 HMC347A v02.0217 GaAs pHEMT SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Assembly Diagram SWITCHES - CHIP 2 7-5 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC347A v02.0217 GaAs pHEMT SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005") Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Figure 1. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. 2 SWITCHES - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 7-6