SWITCHES - CHIP
7-1
HMC347A
v02.0217
GaAs pHEMT SPDT NON-REFLECTIVE
SWITCH, DC - 20 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
The HMC347A is a broadband non-reective GaAs
pHEMT SPDT MMIC chip. Covering DC to 20 GHz,
the switch offers high isolation and low insertion loss.
The switch features over 52 dB isolation at lower
frequencies and over 40 dB at higher frequencies due
to the implementation of on-chip via hole structures.
The switch operates using two negative control volt-
age logic lines of -5/0V, requires no Vee and has no
current consumption. The switch operates down to
DC. The chip features coplanar I/Os that allow 100%
RF testing prior to delivery to the customer.
High Isolation: >40 dB @ 20 GHz
Low Insertion Loss: 2.1 dB @ 20 GHz
Non-Reective Design
Small Size: 1.22 x 0.85 x 0.1 mm
Electrical Specications, TA = +25° C, With 0/-5V Control, 50 Ohm System
Typical Applications
This switch is suitable DC - 20 GHz applications:
• Fiber Optics
• Microwave Radio
• Military
• Space
• VSAT
Parameter Frequency Min. Ty p . Max. Units
Insertion Loss DC - 10.0 GHz 1. 7 2.2 dB
DC - 20.0 GHz 2.1 2.7 dB
Isolation DC - 10.0 GHz 47 52 dB
DC - 20.0 GHz 35 40 dB
Return Loss “On State” DC - 20.0 GHz 9 12 dB
Return Loss RF1, RF2 “Off State” DC - 20.0 GHz 8 11 dB
Input Power for 1 dB Compression 0.5 - 20.0 GHz 22 29 dBm
Input Third Order Intercept
Two-tone Input Power = +10dBm/tone 0.5 - 20.0 GHz 40 45 dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 20.0 GHz 3
10
ns
ns
SWITCHES - CHIP
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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC347A
v02.0217
GaAs pHEMT SPDT NON-REFLECTIVE
SWITCH, DC - 20 GHz
Input Third Order Intercept Point
Return Loss 0.1 and 1 dB Input Compression Point
Insertion Loss Isolation
-5
-4
-3
-2
-1
0
0 5 10 15 20 25
'+25 C '-55 C '+85
INSERTION LOSS (dB)
FREQUENCY (GHz)
10
15
20
25
30
0 5 10 15 20
0.1 dB Compression Point 1 dB Compression Point
P1dB (dBm)
FREQUENCY (GHz)
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18 20
+25 C -55 C +85
IP3 (dBm)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 5 10 15 20 25
RFC RF1, 2 On RF1, 2 Off
RETURN LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0 5 10 15 20 25
RF1 RF2
ISOLATION (dB)
FREQUENCY (GHz)
SWITCHES - CHIP
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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC347A
v02.0217
GaAs pHEMT SPDT NON-REFLECTIVE
SWITCH, DC - 20 GHz
Truth Table
Absolute Maximum Ratings Control Voltages
Outline Drawing
Control Input Signal Path State
A B RFC to RF1 RFC to RF2
High Low ON OFF
Low High OFF ON
State Bias Condition
Low 0 to -0.2V @ 10 uA Max.
High -5V@3uA Typ.to -7V@40uA Max.(+-0.5Vdc)
RF Input Power (Vctl = -5V) +27 dBm
Control Voltage Range (A & B) +0.5V to -7.5 Vdc
Channel Temperature 150 °C
Thermal Resistance
(Insertion Loss Path) 118 ° C/ W
Thermal Resistance
(Terminated Path) 200 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 0 ; Passed 150 V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
WP-8 (Waffle Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Analog
Devices Inc.
SWITCHES - CHIP
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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC347A
v02.0217
GaAs pHEMT SPDT NON-REFLECTIVE
SWITCH, DC - 20 GHz
Pad Number Function Description Interface Schematic
1, 4, 7 RF1, RFC, RF2 This pad is DC coupled and matched to 50 Ohm. Blocking capacitors
are required if the RF line potential is not equal to 0V.
2, 5, 8, 10 CTRLA See truth table and control voltage table.
3, 6, 9 CTRLB See truth table and control voltage table.
GND Die bottom must be connected to RF ground.
Pad Descriptions
Suggested Driver Circuit
SWITCHES - CHIP
2
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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC347A
v02.0217
GaAs pHEMT SPDT NON-REFLECTIVE
SWITCH, DC - 20 GHz
Assembly Diagram
SWITCHES - CHIP
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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC347A
v02.0217
GaAs pHEMT SPDT NON-REFLECTIVE
SWITCH, DC - 20 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip
to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076
mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and
a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultra-
sonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate.
All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab