Specification Comparison
Vishay Siliconix
Document Number 74060 www.vishay.com
06-May-05
Si4420BDY vs. Si4420DY
Description: N-Channel, 30-V (D-S) MOSFET
Package: SO-8
Pin Out: Identical
Part Number Replacements:
Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3
Si4420BDY-T1-E3 Replaces Si4420DY-T1
Summary of Performance:
The Si4420BDY is the replacement to the original Si4420DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter Symbol Si4420BDY Si4420DY Unit
Drain-Source Voltage VDS 30 30
Gate-Source Voltage VGS +20 +20 V
TA = 25°C 13.5 13.5
Continuous Drain Current TA = 70°C ID 10.8 10.8
Pulsed Drain Current IDM 50 50
Continuous Source Current
(MOSFET Diode Conduction) IS 2.3 2.7
A
TA = 25°C 2.5 3.0
Power Dissipation TA = 70°C PD 1.6 1.9
W
Operating Junction & Storage Temperature Range Tj & Tstg -55 to 150 -55 to 150 °C
Maximum Junction-to-Ambient RthJA 50 42
°C/W
SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED)
Si4420BDY Si4420DY
Parameter Symbol Min Typ Max Min Typ Max
Unit
Static
Gate-Threshold Voltage VGS(th) 1.0 3.0 1.0 2.0 3.0 V
Gate-Body Leakage IGSS +
100 +100 nA
Zero Gate Voltage Drain Current IDSS 1 1
µA
On-State Drain Current VGS = 10 V ID(on) 30 30 A
VGS= 10 V 0.007 0.0085 0.0075 0.009
Drain-Source On-Resistance VGS = 4.5 V rDS(on) 0.009 0.011 0.010 0.013
Ω
Forward Transconductance gfs 50 50 S
Diode Forward Voltage VSD 0.75 1.1 NS 1.1 V
Dynamic
Total Charge Qg 16 25 29 45
Total Gate Charge Qgt 31 50 58 90
Gate-Source Charge Qgs 6.6 12
Gate-Drain Charge Qgd 4.0 9.5
nC
Gate Resistance Rg 0.5 1.0 1.5 0.5 2.1 4.6 Ω
Switching
td(on) 15 25 22 35
Turn-On Time* tr 11 18 13 20
td(off) 40 60 82 125
Turn-Off Time* tf 12 20 30 45
Source-Drain Reverse Recovery Time trr 30 50 50 75
ns
NS denotes parameter not specified
