HIGH POWER SILICON
PNP/NPN TRANSISTORS
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Semelab Limited
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Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9494
Issue 1
Page 1 of 3
2N5875 (PNP)
2N5877 (NPN)
• High Power, Low VCE(Sat).
• Hermetic TO3 (TO-204AA) Metal Package.
• Ideally Suited For Power Amplifier And Switching Applications.
• Screening Options Available.
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
2N5875
PNP
2N5877
NPN
VCBO Collector – Base Voltage -60V 60V
VCEO Collector – Emitter Voltage -60V 60V
VEBO Emitter – Base Voltage -5V 5V
IC Continuous Collector Current 10A
IB Base Current 4A
PD Total Power Dissipation at TC = 25°C 150W
Derate Above 25°C 0.857W/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC Thermal Resistance, Junction To Case 1.17 °C/W
HIGH POWER SILICON
PNP/NPN TRANSISTORS
2N5875 / 2N5877
Sem
SemSem
Semelab Limited
elab Limitedelab Limited
elab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9494
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
(1)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(2)
Collector-Emitter
Breakdown Voltage IC = 20mA IB = 0 60 V
ICEO Collector Cut-Off Current VCE = 30V IB = 0 1.0
VCE = 60V VBE = -1.5V 0.5
ICEX Collector Cut-Off Current TC = 150°C 5
ICBO Collector Cut-Off Current VCB = 60V IE = 0 0.5
IEBO Emitter Cut-Off Current VEB = 5V IC = 0 1.0
mA
IC = 1.0A VCE = 4V 35
IC = 4A VCE = 4V 20 100
hFE
(2)
Forward-current transfer
ratio
IC = 10A VCE = 4V 4
IC = 5A IB = 0.5A 1.0
VCE(sat)
(2)
Collector-Emitter Saturation
Voltage IC = 10A IB = 2.5A 3
VBE(sat)
(2)
Base-Emitter Saturation
Voltage IC = 10A IB = 2.5A 2.5
VBE(on)
(2)
Base-Emitter On Voltage IC = 4A VCE = 4V 1.5
V
DYNAMIC CHARACTERISTICS
IC = 0.5A VCE = 10V
fT
(3)
Current Gain-Bandwidth
Product f = 1.0MHz
4 MHz
IC = 1.0A VCE = 4V
hfe Small Signal Current Gain f = 1.0KHz 20
Notes
NotesNotes
Notes
(1) For PNP (2N5875) device, voltage and current values are negative
(2) Pulse Width ≤ 380us, δ ≤ 2%
(3) fT = |hfe| * ftest
HIGH POWER SILICON
PNP/NPN TRANSISTORS
2N5875 / 2N5877
Sem
SemSem
Semelab Limited
elab Limitedelab Limited
elab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9494
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO3 (TO
-
204AA) METAL PACKAGE
Underside View
Pin 1 - Base Pin 2 - Emitter Case - Collector
1 2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
