Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
1/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING
0.2+/-0.05
0.2+/-0.05
0.9+/-0.1
INDEX MARK
(Gate)
6.0+/-0.15
4.9+/-0.15
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1.0+/-0.05
(0.25)
2
3
1
3.5+/-0.05
2.0+/-0.05
(0.25)
(0.22) (0.22)
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
FEATURES
High power gain:
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS1-101, T112 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
2/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/- 20 V
Pch Channel dissipation Tc=25°C 50 W
Pin Input Power Zg=Zl=50Ω 1.5 W
ID Drain Current - 3 A
Tch Junction Temperature - 150 °C
Tstg Storage temperature - -40 to +125 °C
Rth j-c Thermal resistance Junction to case 2.5 °C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 200 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold Voltage VDS=12V, IDS=1mA 1.4 1.7 2.4 V
Pout1 Output power 7 8 - W
ηD1 Drain efficiency
f=175MHz , VDD=7.2V
Pin=0.3W,Idq=700mA 55 60 - %
Pout2 Output power 7 8 - W
ηD2 Drain efficiency
f=520MHz , VDD=7.2V
Pin=0.7W,Idq=750mA 50 55 - %
Load VSWR tolerance
VDD=9.2V,Po=7W(Pin Control)
f=175MHz,Idq=700mA,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Load VSWR tolerance
VDD=9.2V,Po=7W(Pin Control)
f=520MHz,Idq=750mA,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note: Above parameters, ratings, limits and conditions are subject to change.
Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
3/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Vds VS. Crss CHARAC TERISTICS
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
20
40
60
80
100
120
140
160
0 5 10 15 20
Vds(V)
Ciss(pF)
Ta= +25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
20
40
60
80
100
120
0 5 10 15 20
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
1
2
3
4
5
6
7
8
9
10
0246810
Vds(V)
Ids(A)
Ta=+25°C Vg s=5V
Vgs=4V
Vgs= 3V
Vg s =3.5V
Vg s =4.5V
Vgs-Ids CHARACTERIS TICS
0.0
2.0
4.0
6.0
8.0
10.0
012345
Vgs(V)
Ids(A),GM(S)
Ta=+25°C
Vds=10V
Ids
GM
CHANNEL DISSIPATION VS.
AM BIENT TEM PERATURE
0
10
20
30
40
50
60
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(deg:C.)
CHANNEL DISSIPATION Pch(W
)
...
On PCB(*1)
with throgh hole
and Heat- si nk
On PCB(*1) with Heat-sink
*1:The mater i al of the PC B
Glass epoxy (t=0.6 mm)
Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
4/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
0
10
20
30
40
-5 0 5 10 15 20 25 30
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
0
20
40
60
80
ηd(%)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=700mA
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERISTICS
@f=175MHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0 500 1000
Pin(mW)
Pout(W) , Idd(A)
20
40
60
80
100
ηd(%)
Po
ηd
Idd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=700mA
Vdd-Po CHARACTERISTICS
@f=175MHz
0
5
10
15
20
25
30
4 6 8 10 12 14
Vdd(V)
Po(W)
0
1
2
3
4
5
6
Idd(A)
Po
Idd
Ta=25°C
f=175MHz
Pin=0.3W
Icq=700mA
Zg=ZI=50 ohm
Pin-Po CHARACTERISTICS
@f=520MHz
0
10
20
30
40
0 5 10 15 20 25 30 35
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
0
20
40
60
80
ηd(%)
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=750mA
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERISTICS
@f=520MHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Pin(W)
Pout(W) , Idd(A)
30
40
50
60
70
80
90
100
ηd(%)
Po
ηd
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=750mA
Vdd-Po CHARACTERISTICS
@f=520MHz
0
5
10
15
20
25
4 6 8 10 12 14
Vdd(V)
Po(W)
0
1
2
3
4
5
Idd(A)
Po
Idd
Ta=25°C
f=520MHz
Pin=0.7W
Icq=750mA
Zg=ZI=50 ohm
Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
5/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
0
2
4
6
8
10
012345
Vgs(V)
Ids(A)
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
+25°C
Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
6/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=175MHz)
TEST CIRCUIT(f=520MHz)
W
W
RD07MVS1
10mm
3mm
16pF
140pF
24.5mm
19.5mm
62pF
RF-in
62pF
Vdd
V
gg
19mm
4.7kOHM
100pF
28.5mm
6.5mm
11.5mm
1mm 11.5mm
10uF,50VC2
C1
L
RF-out
68OHM
180pF
19mm
56pF
W:line width=1.0mm
L: Enameled wire 7Turns,D:0.43mm,2.46mmO.D
C1,C2:1000pF,0.022uF in parallel
Note:Board material- Teflon substrate
Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8mm
175MHz
5mm
3.5mm
5mm
22pF
22pF
520MHz
Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8m
m
Note:Board material- Teflon substrate
C1,C2:1000pF,0.022uF in parallel
L: Enameled wire 5Turns,D:0.43mm,2.46mmO.D
W:ine width=1.0mm
6pF
19mm
RF-out
L
C1 C2 10uF,50V
3.5mm
9mm 3.5mm
6.5mm 44.5mm
10pF
4.7kOHM
19mm
V
gg
Vdd
68pF
RF-in
68pF
46mm
37pF 20pF
3.5mm
6.5mm
RD07MVS1
WW
20pF
18pF
Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
7/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin*
175MHz Zout*
175MHz Zin* Zout*
Zo=10
Ω
Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W
Zin*=1.55+j5.53
Zout*=3.24-j0.26
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zin* Zout*
Zo=10
Ω
Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W
Zin*=0.76+j0.06
Zout*=1.61-j0.52
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zin*
520MHz Zout*
output impedance
output impedance
Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
8/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.890 -174.1 5.508 82.1 0.016 -3.6 0.790 -172.8
150 0.897 -175.6 3.613 75.0 0.015 -8.5 0.801 -174.0
175 0.899 -176.0 3.028 72.4 0.015 -9.6 0.802 -174.1
200 0.901 -176.3 2.604 70.1 0.014 -10.9 0.815 -174.0
250 0.907 -176.7 2.019 65.6 0.014 -12.7 0.844 -174.1
300 0.913 -177.0 1.614 60.7 0.012 -15.3 0.843 -174.1
350 0.918 -177.3 1.308 57.1 0.011 -15.8 0.860 -174.4
400 0.924 -177.8 1.102 54.1 0.010 -14.2 0.879 -175.0
450 0.928 -178.0 0.929 50.1 0.009 -14.8 0.882 -175.1
500 0.933 -178.3 0.790 48.6 0.008 -9.6 0.895 -175.5
520 0.935 -178.5 0.753 47.6 0.007 -7.7 0.901 -175.8
550 0.937 -178.8 0.692 45.3 0.007 -5.6 0.906 -176.2
600 0.940 -179.2 0.595 43.6 0.006 0.4 0.907 -176.6
650 0.942 -179.4 0.529 42.4 0.006 17.1 0.916 -177.2
700 0.944 -179.8 0.467 40.2 0.005 21.8 0.923 -177.6
750 0.947 179.8 0.416 39.4 0.005 40.9 0.921 -178.0
800 0.948 179.4 0.374 38.6 0.004 52.0 0.930 -178.8
850 0.949 179.0 0.343 37.6 0.005 67.1 0.933 -178.9
900 0.951 178.6 0.304 36.5 0.005 72.6 0.932 -179.3
950 0.951 178.2 0.284 37.6 0.006 85.8 0.937 179.8
1000 0.952 177.9 0.262 35.1 0.007 85.1 0.938 179.7
1050 0.950 177.4 0.234 36.0 0.008 89.8 0.938 179.3
1100 0.952 176.9 0.226 35.8 0.009 93.4 0.940 178.2
S11 S21 S12 S22
Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
9/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice tha
t
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to aris
e
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notic
e
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products ar
e
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters fo
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact t
o
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefor
e
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case o
f
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to th
e
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the las
t
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Silicon RF Power Semiconductors
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 17 Aug 2010
10/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Keep safety first in your circuit designs !
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best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other
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