BU406D BU407D SILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV 3 1 2 TO-220 DESCRIPTION The BU406D and BU407D are silicon planar epitaxial NPN transistors with integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, devices for use in horizontal deflection output stages of MTV receivers with 110o CRT. The BU406D is primarily intended for large screen, while the BU407D is for medium and small screens INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BU407D 330 V 330 V V CBO Collector-Base Voltage (I E = 0) 400 V CEV Collector-Emitter Voltage (V BE = - 1.5V) 400 V EBO Emitter-Base Voltage (I C = 0) 6 V 7 A I CM Collector Peak Current (repetitive) 10 A I CM Collector Peak Current (t p = 10ms) 15 A IC IB Collector Current Unit BU406D Base Current P tot Total Dissipation at T c = 25 o C T stg Storage Temperature Tj June 1997 Max. Operating Junction Temperature 4 A 60 W -65 to 150 o C 150 o C 1/4 BU406D/BU407D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.08 o C/W 70 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = - 1.5V) Test Conditions Min. Typ. for BU406D V CE =400 V for BU407D V CE =330 V Max. Unit 15 mA 15 mA 400 mA Emitter Cut-off Current (I C = 0) V EB = 6 V V CE(sat) Collector-emitter Saturation Voltage IC = 5 A IB = 0.65 A 1 V V BE(sat) Base-emitter Saturation Voltage IC = 5 A I B = 0.65 A 1.3 V Transition-Frequency I C = 0.5 A Turn-off Time IC = 5 A I s/b Second Breakdown Collector Current V CE = 40 V VF Diode Forward Voltage IF = 5 A fT t off Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2/4 V CE = 10V 10 MHz I Bend = 0.65 A t = 10 ms 0.75 4 s A 1.5 A BU406D/BU407D TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BU406D/BU407D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4