BU406D
BU407D
SILICON NPN SWITCHING TRANSISTORS
■SGS -THO MS ON PRE F ERRE D SALES T YP E S
■NPN TRANSISTOR
■VERY HIGH SWITCHING SPEED
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR
M ONO CH R OME TV
DESCRIPTION
The BU406D and BU407D are silicon planar
epitaxial NPN transistors with integrated damper
diode, in Jedec TO-220 plastic package. They
are fast switching, devices for use in horizontal
deflection output stages of MTV receivers with
110o CRT.
The BU406D is primarily intended for large
screen, while the BU407D is for medium and
small screens
INTERNAL SCHEMATI C DIAG RAM
June 1997
123
TO-220
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
BU406D BU407D
VCBO Collector-Base Voltage (IE = 0) 400 330 V
VCEV Collector-Emitter Voltage (VBE = - 1.5V) 400 330 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
ICCollector Current 7 A
ICM Collector Peak C urrent (repetitive) 10 A
ICM Collector Peak C urrent (tp = 10ms) 15 A
IBBase Current 4 A
Ptot Total Dissipation at Tc = 25 oC60W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.08 oC/W
Rthj-amb Thermal Resistance Junction-ambient Max 70 oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VBE = - 1.5V) for BU406D
VCE =400 V
for BU407D
VCE =330 V
15
15
mA
mA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 6 V 400 mA
VCE(sat)∗Collector-emitter
Saturation Voltage IC = 5 A IB = 0.65 A 1 V
VBE(sat)∗Base-emitter
Saturation Voltage IC = 5 A IB = 0.65 A 1.3 V
fTTransition-Frequency IC = 0.5 A VCE = 10V 10 MHz
toff∗∗ Turn-off Time IC = 5 A IBend = 0.65 A 0.75 µs
Is/b Second Breakdown
Collector Current VCE = 40 V t = 10 ms 4 A
VFDiode Forward Voltage IF = 5 A 1.5 A
∗ P ulsed: Pulse durat ion = 300 µs, duty cycle 1.5 %.
BU406D/BU407D
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHANICAL DATA
BU406D/BU407D
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for th e
conse quences of use of such information nor for any infringement of patent s or othe r rights of third parties whic h may results from its use. No
license is granted by implicat ion or ot h erwise under any patent or patent rights of SGS-THOMSON Micro electronics . Specifi cations mentioned
in this publicat ion are subject to change without noti ce. This publicat ion sup ersedes and replaces all inf ormation previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectr onics - Printed in Italy - All Rights Reserved
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
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BU406D/BU407D
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