MMST4401
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
DS30084 Rev. 9 - 2 1 of 4
www.diodes.com MMST4401
© Diodes Incorporated
E
B
C
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMST4403)
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: K3X - See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.006 grams (approximate)
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α 0° 8°
All Dimensions in mm
A
M
JL
ED
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current – Continuous (Note 1) IC600 mA
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BC
H
K
BE
C
G
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICEX ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current IBL ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
IC = 100μA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40
0.75 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.75
⎯
0.95
1.2 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cob ⎯ 8.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Ceb ⎯ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 kΩ
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 40 500 ⎯
Output Admittance hoe 1.0 30 μS
VCE = 10V, IC = 1.0mA,
f = 1.0MHz
Current Gain-Bandwith Product fT250 ⎯ MHz VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td⎯ 15 ns
Rise Time tr⎯ 20 ns VCC = 30V, IC = 150mA,
VBE(OFF) = 2.0V, IB1 = 15mA
Storage Time ts⎯ 225 ns
Fall Time tr⎯ 30 ns VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
5. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1, Max Power Dissipation vs
Am bi ent Tem perature
A
150
200
250
300
350
0
400
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs
Collector Current
C
T = 125°C
A
DS30084 Rev. 9 - 2 2 of 4
www.diodes.com MMST4401
© Diodes Incorporated
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-E
M
ITTE
R
V
O
LTA
G
E (V)
CE
I = 1mA
C
1.0
5.0
20
10
30
0.1 101.0 50
C
A
P
A
C
I
T
A
N
C
E (p
F
)
REVERSE VO LTAGE (V)
Fig. 3 Typical Capacitance
C
ibo
110
100 1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fi g. 5 Collec t or E mi tter Satur ation Vo l t a ge
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.
5
I
I
C
B
= 10
10.1 10 100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
10
100
1,000
110
I , COLLECTOR CURRENT (mA)
Fig . 7 Gain Bandwid th Prod uct vs. Collect or Current
C
f,
100
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
DS30084 Rev. 9 - 2 3 of 4
www.diodes.com MMST4401
© Diodes Incorporated
Ordering Information (Note 4 & 6)
Device Packaging Shipping
SOT-323 3000/Tape & Reel
MMST4401-7-F
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3X
YM
DS30084 Rev. 9 - 2 4 of 4
www.diodes.com MMST4401
© Diodes Incorporated
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008
K3X = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = Se
p
tembe
r
2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
