2SA1627A PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R217-004.D
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -600 V
Collector-Emitter Voltage VCEO -600 V
Emitter-Base Voltage VEBO -7.0 V
Collector Power Dissipation TO-126/TO-126C PC 1.0 W
TO-252 1.9
Collector Current (DC) IC -1.0 A
Collector Current (Pulse) (Note 2) ICP -2.0 A
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≦10ms, Duty Cycle≦50%
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO V
CB= -600V, IE=0 -10 µA
Emitter Cut-Off Current IEBO V
EB= -7.0V, IC=0 -10 µA
DC Current Gain (Note 2) hFE1 V
CE= -5.0V, IC= -0.1A 30 58 120
hFE2 V
CE= -5.0V, IC= -0.5A 4 19
Collector-Emitter Saturation Voltage(Note) VCE
SAT
I
C= -0.3A, IB= -0.06A -0.28 -1.5 V
Base-Emitter Saturation Voltage(Note) VBE
SAT
I
C= -0.3A, IB= -0.06A -0.85 -1.2 V
Gain Bandwidth Product fT V
CE= -10V, IE=0.1A 10 28 MHz
Output Capacitance COB V
CB= -10V, IE=0, f=1.0MHz 42 50 pF
Turn-On Time tON IC=-0.5A, RL=500Ω,
IB1= -IB2= -0.1A, VCC =-250V
0.1 0.5 µs
Storage Time TSYG 3.5 5.0 µs
Fall Time tF 0.08 0.5 µs
Note: Pulsed PW≦350µs,Duty Cycle≦2%
CLASSIFICATION OF hFE1
RANK M L K
RANGE 30-60 40-80 60-120