TLP290(SE
1 2019-05-20
© 2019
Toshiba Electronic Devices & Storage Corporation
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP290(SE
Programmable Controllers
AC/DC-Input Module
Hybrid ICs
TLP290(SE consist of photo transistor, optically coupled to two infrared
emitting dio de con nect ed inv erse parallel, and ca n operate di r ectly by AC
input current.
The TLP290(SE is housed in the very small and thin SO4 package.
Since TLP290(SE are guaranteed wide operating temperature (Ta=-55 to 110
˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density
surface mountin g ap pli cat ion s such as pro gram mab le contr ol ler s and hy br id
ICs.
• Collector-Emitter voltage : 80 V (min)
• Current transfer ratio : 50% (min)
Rank GB : 100% (min)
• Isolation voltage : 3750 Vrms (min)
• Guaranteed performance over : -55 to 110 ˚C
• UL-recognized : UL 1577, File No.E67349
• cUL-recognized : CSA Component Acceptance Service No.5A,
File No.E67349
• VDE-approved : EN 60747-5-5, EN 62368-1 (Note 1)
• CQC-approved : GB4943.1, GB8898 Japan and Thailand Factory
Note 1 : When a VDE approved type is needed,
please designate the Option (V4).
Construction Mechanical Rating
Creepage distance: 5.0 mm (min)
Clearance: 5.0 mm (min)
Insulation thickness: 0.4 mm (min)
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
3
2
4
1
TLP290
Cathode
: Cathode
Anode
: Emitter
: Collector
Pin Configuration
Unit: mm
Start of commercial production
2012-02
TLP290(SE
2 2019-05-20
© 2019
Toshiba Electronic Devices & Storage Corporation
Current Transfer Ratio (Unless otherwise speci f i ed , Ta = 25°C)
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP290(GB,SE
For safety standard certification, however, specify the part number alone.
(e.g.) TLP290(GB,SE: TLP290
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Note Rating Unit
LED
R.M.S. forward current IF(RMS) ±50 mA
Input forward current derating (Ta ≥ 90°C) ΔIF /ΔTa -1.5 mA /°C
Input forward current (pulsed) IFP (Note 2) ±1 A
Input power dissipat i on PD 100 mW
Input power dissipat i on derating (Ta ≥ 90°C) ΔPD/ΔTa -3.0 mW/°C
Junction temperature Tj 125 °C
Detector
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collect or power dissipat i on PC 150 mW
Collect or power dissipat i on derating (Ta ≥ 25°C) ΔPC /ΔTa -1.5 mW /°C
Junction temperature Tj 125 °C
Operating tem perature range Topr -55 to 110 °C
Storage t emperature range Tstg -55 to 125 °C
Lead soldering temperature Tsol 260 (10 s) °C
Total package power dissi pation PT 200 mW
Total package power dissi pation derating (Ta ≥ 25°C) ΔPT /ΔTa -2.0 mW /°C
Isolation voltage BVS (Note3) 3750 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliabilit y test
report and estimated failure rate, etc).
Note2: Pulse width ≤ 100 μs, frequency 100 Hz
Note3: AC, 60 s., R.H.≤ 60 %, Device considered a two terminal device: LED side pins shorted together and
detector sid e pins shor ted together.
TYPE Classification
(Note1)
Current Transf er Ration (%)
(IC / IF) Marking of Classification
IF = 5 mA, VCE = 5 V, Ta = 25°C
Min
Max
TLP290
Blank 50 600 Blank, YE, GR, BL, GB
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank GB 100 600 GB
Rank BL 200 600 BL
TLP290(SE
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Conditi on Min Typ Max Unit
LED
Input forward voltage VF IF = ±10 mA 1.1 1.25 1.4 V
Input capacitance CT V = 0 V, f = 1 MHz - 60 - pF
Detector
Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 - - V
Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 - - V
Dark current ICEO VCE = 48 V, - 0.01 0.08 μA
VCE = 48 V, Ta = 85 °C - 2 50 μA
Collector-e mi tte r capacitance CCE V = 0 V, f = 1 MHz - 10 - pF
Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Conditi on MIn Typ. Max Unit
Current transf er ratio IC / IF IF = ±5 mA, VCE = 5 V Rank GB
50 - 600 %
100 - 600
Saturated CTR IC / IF (sat) I F = ± 1 mA, VCE = 0.4 V
Rank GB
- 60 - %
30 - -
Collector-emitter
saturati on voltage VCE (sat)
IC = 2.4 mA, IF = ±8 mA - - 0.3
V
IC = 0.2 mA, IF = ±1 mA
Rank GB
- 0.2 -
- - 0.3
Off-state collector current IC(off) VF = ± 0.7 V, VCE = 48 V - - 10 μA
Collector current ratio IC (ratio) IC (IF = -5 mA) / IC (IF = 5 mA)
(Fig.1) 0.33 - 3 -
Fig.1: Collector current ratio test circuit
5V)
CE
V,
F1
I
F
(I
C1
I
5V)
CE
V,
F2
I
F
(I
C2
I
C(ratio)
I==
==
=
V
CE
I
C1
I
C2
I
F1
I
F2
TLP290(SE
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Toshiba Electronic Devices & Storage Corporation
Isolation Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Conditi on Min Typ. Max Unit
Total capacitance (input to output) CS VS = 0V, f = 1 MHz - 0.8 - pF
Isolation resist ance RS VS = 500 V, R.H.≤ 60 % 1×10
12
10
14
- Ω
Isolation voltage BVS AC, 60 s 3750 - - Vrms
Switching Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Conditi on Min Typ. Max Unit
Rise time tr
VCC = 10 V, IC = 2 mA
RL = 100 Ω
- 2 -
μs
Fall time tf - 3 -
Turn-on time ton - 3 -
Turn-off time toff - 3 -
Turn-on time ton RL = 1.9 kΩ (Fig.2)
VCC = 5 V, IF = ±16 mA
- 0.5 -
μs
Storage time ts - 30 -
Turn-off time toff - 50 -
(Fig. 2): Switching time test circuit
V
CE
VCC
R
L
I
F
I
F
V
CE
V
CC
0.5V
4.5V
t
off
ton
t
S
TLP290(SE
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Toshiba Electronic Devices & Storage Corporation
I
F
-Ta
P
C
-Ta
Input forward current
IF (mA)
Collect or power dissipat i on
PC (mW)
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
IFP- D R
IF-VF
Input forward current (pulsed)
IFP (mA)
Input forward current I
F (mA)
Duty c ycl e r atio D
R
Input forward voltage V
F
(V)
∆ V
F
/∆Ta- I
F
I
F P
– V
F P
Input forward current
temperature coefficient
ΔVF /ΔTa (mV/ °C)
Input forward current (pulsed) I
FP (mA)
Input forward current I
F
(mA)
Input forward voltage (pulsed) V
FP
(V)
Pules width ≤100μs
Ta=25˚C
10
100
1000
10000
10-3
10-2
10-1
100
Pulse width ≤10μs
Repetitive frequency=100Hz
Ta=25°C
This curve shows the
maximum limit to the input
forward current.
This curve shows the maximum
limit to the collector power
dissipation.
This curve shows the
maximum limit to the input
forward current (pulsed).
110˚C
85˚C
50˚C
25˚C
0˚C
-25˚C
-55˚C
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP290(SE
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Toshiba Electronic Devices & Storage Corporation
I
C
-V
CE
I
C
-V
CE
Collector current
IC (mA)
Collector current
IC (mA)
Collector-emitter voltage VCE (V)
Collector-emitter voltage V
CE
(V)
IC- I F
I
C/
I
F
- I
F
Collector current I
C (mA)
Current transf er ratio
IC / IF (%)
Input forward voltage I
F
(mA)
Input forward current I
F
(mA)
I
CEO
-Ta
V
CE(sat)
- Ta
Dark current ICEO (μA)
Collector-
emitter saturation voltage
VCE(sat) (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
VCE=10V
VCE=5V
VCE=0.4V
VCE=10V
VCE=5V
VCE=0.4V
IF=8mA, IC=2.4mA
IF=1mA, IC=0.2mA
Ta=25˚C
Ta=25˚C
I
F
= 5mA
10 mA
15 mA
20 mA
30 mA
50 mA
P
C
(max)
5 mA
10 mA
15 mA
I
F
= 2 mA
20 mA
30 mA
50 mA
Ta=25˚C
V
CE
=48V
24V
10V
5V
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP290(SE
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Toshiba Electronic Devices & Storage Corporation
I
C
- Ta
Collector current
IC (mA)
Ambient temperature Ta (°C)
Switching time - R
L
Switching time - Ta
Switching time (μs)
Switching time (μs)
Load resistanc e RL (kΩ)
Ambient temperature Ta (°C)
0.1
1
10
100
-60 -40 -20 020 40 60 80 100 120
t
off
Ta=25˚C
IF=16mA
VCC=5V
IF=16mA
VCC=5V
RL=1.9kΩ
ts
ton
t
off
ts
Ton
VCE=5V
IF=0.5mA
5 mA
1 mA
10 mA
25 mA
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise not ed.
TLP290(SE
8 2019-05-20
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Toshiba Electronic Devices & Storage Corporation
Solder ing and Storage
1. Soldering
1.1 Soldering
When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as
much as possible by observing the following conditions.
1) Using solder reflow
∙Temperature profile example of lead (Pb) solder
∙Temperature profile example of using lead (Pb)-free solder
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)
･Please preheat it at 150° C between 60 and 12 0 seco nds .
･Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.
3) Using a soldering iron
Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may
be heated at most once.
Time
(s)
(°C)
240
210
160
60
to 120s
less than 30s
Package surface temperature
140
Time
(s)
(
°C)
260
230
190
60
to
120s
30
to
50s
180
Package surface temperature
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste
type used by the customer within the
described profile.
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste
type used by the customer within the
described profile.
TLP290(SE
9 2019-05-20
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Toshiba Electronic Devices & Storage Corporation
2. Storage
1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.
2) Follow the precautions printed on the packing label of the device for transportation and storage.
3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,
respectively.
4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
6) When restoring devices after removal from their packing, use anti-static containers.
7) Do not allow loads to be applied directly to devices while they are in storage.
8) If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
TLP290(SE
10 2019-05-20
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Toshiba Electronic Devices & Storage Corporation
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