NPN SILICON PLANAR TRANSISTOR 2N657
TO-39
Metal Can Package
General Purpose Transistor.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Collector Emitter Voltage VCEO 100 V
Collector Base Voltage VCBO 100 V
Emitter Base Voltage VEBO 8.0 V
Collector Current IC0.5 A
Power Dissipation @ Ta=25ºC PD1.0 W
Derate Above 25ºC 5.7 mW/ºC
Power Dissipation@ Tc=25ºC PD4.0 W
Derate Above 25ºC 22.8 mW/ºC
Operating And Storage Junction Tj, Tstg -65 to +200 ºC
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
Collector Emitter Voltage VCEO IC=250µA,IB=0 100 V
Collector Base Voltage VCBO IC=100µA,IE=0 100 V
Emitter Base Voltage VEBO IC=250µA,Ic=0 8.0 V
Collector Cut off Current ICBO VCB=30V, IE=0 10 µA
DC Current Gain hFE IC=200mA,VCE=10V 30 90
Collector Emitter Saturation Voltage *VCE(Sat) IC=200mA,IB=40mA 4.0 V
SMALL SIGNAL CHARACTERISTICS
Input Impedance * | hfe |I
B=8mA, VCE=10V 0.5 KΩ
*Pulse Test: Pulse Length= 300µs, Duty Cycle <2%
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company