DSS60600MZ4-13 - Diodes

DSS60600MZ4

Document number: DS31589 Rev. 2 - 2 1 of 5

www.diodes.com December 2008

DSS60600MZ4

NEW PRODUCT

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features

• Ideally Suited for Automated Assembly Processes

• Ultra Low Collector-Emitter Saturation Voltage

• Complementary NPN Type Available (DSS60601MZ4)

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT-223

• Case Material: Molded Plastic, "Green” Molding Co mpound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.115 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO -100 V

Collector-Emitter Voltage VCEO -60 V

Emitter-Base Voltage VEBO -6 V

Peak Pulse Current ICM -12 A

Continuous Collector Current IC -6 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C PD 1.2 W

Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C R

θ

JA 104 °C/W

Power Dissipation (Note 4) @ TA = 25°C PD 2 W

Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C R

θ

JA 62.5 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index .php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Device mounted on Polymide PCB with 330mm2 2oz. Copper pad layout.

Top View Device Schematic Pin Out Configuration

3

1

2,4

COLLECTOR

EMITTER

BASE

4

3

2

1

CC

B

E

DSS60600MZ4

Document number: DS31589 Rev. 2 - 2 2 of 5

www.diodes.com December 2008

DSS60600MZ4

NEW PRODUCT

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage V

(

BR

)

CBO -100 ⎯ ⎯ V IC = -100μA

Collector-Emitter Breakdown Voltage (Note 5) V

(

BR

)

CEO -60 ⎯ ⎯ V IC = -10mA

Emitter-Base Breakdown Voltage V

(

BR

)

EBO -6 ⎯ ⎯ V IE = -100μA

Collector-Base Cutoff Current ICBO ⎯ ⎯ -100 nA VCB = -100V, IE = 0

⎯ ⎯ -50 μA VCB = -100V, IE = 0, TA = 150°C

Emitter-Base Cutoff Current IEBO ⎯ ⎯ -100 nA

VEB = -6V, IC = 0

ON CHARACTERISTICS (Note 5)

DC Current Gain hFE

150 ⎯ ⎯

⎯

VCE = -2V, IC = -0.5A

120 ⎯ 360 VCE = -2V, IC = -1A

100 ⎯ ⎯ V

CE = -2V, IC = -2A

70 ⎯ ⎯ V

CE = -2V, IC = -6A

Collector-Emitter Saturation Voltage VCE(SAT)

⎯ ⎯ -50

mV

IC = -0.1A, IB = -2mA

⎯ -50 -70 IC = -1A, IB = -100mA

⎯ -90 -120 IC = -2A, IB = -200mA

⎯ ⎯ -250 IC = -3A, IB = -60mA

⎯ ⎯ -350 IC = -6A, IB = -600mA

Equivalent On-Resistance RCE

(

SAT

)

⎯ 45 60

mΩ IC = -2A, IB = -200mA

Base-Emitter Saturation Voltage VBE

(

SAT

)

⎯ ⎯ -1.0 V

IC = 1A, IB = -100mA

Base-Emitter Turn-on Voltage VBE

(

ON

)

⎯ ⎯ -0.9 V

VCE = -2V, IC = -1A

SMALL SIGNAL CHARACTERISTICS

Transition Frequency fT 100 ⎯ ⎯ MHz VCE = -10V, IC = -100mA,

f = 100MHz

Output Capacitance Cobo ⎯ 50 ⎯ pF VCB = -10V, f = 1MHz

Input Capacitance Cibo ⎯ 300 ⎯ pF VEB = -5V, f = 1MHz

SWITCHING CHARACTERISTICS

Turn-On Time ton ⎯ 350 ⎯ ns VCC = -30V, IC = -750mA,

IB1 = -15mA

Delay Time td ⎯ 180 ⎯ ns

Rise Time t

r

⎯ 170 ⎯ ns

Turn-Off Time toff ⎯ 400 ⎯ ns VCC = -30V, IC = -750mA,

IB1 = IB2 = -15mA

Storage Time ts ⎯ 300 ⎯ ns

Fall Time tf ⎯ 100 ⎯ ns

Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

0

0.4

0.8

25 50 75 100 125 150

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(mW)

D

T , AMBIENT TEMPERA TURE (°C)

Fig. 1 Power Dissipation vs.

Am bi ent Tem per at ure

A

1.2

1.6

2.0

0

0.001

0.01

0.1

1

10

100

0.1 1 10 100

V , COLLECTOR-EMIT TER VO LTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

I,

C

O

LLE

C

T

O

R

C

U

R

EN

T

(A )

C

Pw = 100ms

Pw = 10ms

Pw = 1ms

DSS60600MZ4

Document number: DS31589 Rev. 2 - 2 3 of 5

www.diodes.com December 2008

DSS60600MZ4

NEW PRODUCT

0

0.2

0.4

0.6

0.8

1.0

1.2

048121620

-V , COLLECTOR-EMITTER VOLT AGE (V)

CE

Fig. 3 Typical Collector Current

vs. Collector-Emitter Voltage

-I ,

C

O

LLE

C

T

O

R

C

U

R

EN

T

(A)

C

I = -1mA

B

I = -2mA

B

I = -3mA

B

I = -4mA

B

I = -5mA

B

1 10 100 1,000 10,000 100,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 4 T y pical DC Current Gain vs. Collector Current

10

100

1,000

h, D

C

U

R

E

N

T

G

AI

N

FE

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = -2V

CE

1 10 100 1,000 10,000 100,000

-I , COLLECTOR CURRENT (mA)

C

Fig . 5 Typi cal Col le ct or-Emi t te r Satur at ion Voltag e

vs. Collector Current

0.001

0.01

0.1

1

-V ,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION

CE(SAT)

VOLT AGE (V)

I/I = 10

CB

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig . 6 Typi c al Base-Emitt er Tu r n- O n Vol tage

vs. Col lecto r Current

0

0.2

0.4

0.6

0.8

1.0

1.2

-V , BASE-EMI

T

E

R

T

U

R

N-

O

N V

O

L

T

A

G

E (V)

BE(ON)

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = -2V

CE

1 10 100 1,000 10,000 100,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 7 Typical Base-Emitter Saturation Vo lt age

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

1.2

-V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I = 10

CB

/I

10

100

1,000

0.1 1 10 100

V , REVERSE VOL TAGE (V)

R

Fig. 8 Typical Capacitance Characteristics

C

A

P

A

C

I

T

AN

C

E (pF)

C

ibo

C

obo

f = 1MHz

DSS60600MZ4

Document number: DS31589 Rev. 2 - 2 4 of 5

www.diodes.com December 2008

DSS60600MZ4

NEW PRODUCT

Fig. 9 Typical Gain-Bandwidth Product

vs. Col lector Cu rrent

0102030405060708090100

-I , COLLECTOR CURRENT (mA)

C

1

10

100

1,000

f,

G

AIN-BANDWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

V = -10V

f = 100MHz

CE

Ordering Information (Note 6)

Part Number Case Packaging

DSS60600MZ4-13 SOT-223 2500/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Package Outline Dimensions

SOT-223

Dim Min Max Typ

A 1.55 1.65 1.60

A1 0.010 0.15 0.05

b1 2.90 3.10 3.00

b2 0.60 0.80 0.70

C 0.20 0.30 0.25

D 6.45 6.55 6.50

E 3.45 3.55 3.50

E1 6.90 7.10 7.00

e — — 4.60

e1 — — 2.30

L 0.85 1.05 0.95

Q 0.84 0.94 0.89

All Dimensions in mm

ZPS66 = Product Type Marking Code

YWW = Date Code Marking

Y = Last digit of year (ex: 8 = 2008)

WW = Week code 01 - 52

A1

A

ZPS66

YWW

DSS60600MZ4

Document number: DS31589 Rev. 2 - 2 5 of 5

www.diodes.com December 2008

DSS60600MZ4

NEW PRODUCT

Suggested Pad Layout

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages. LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

Dimensions Value (in mm)

X1 3.3

X2 1.2

Y1 1.6

Y2 1.6

C1 6.4

C2 2.3

X2

C1

C2

X1

Y2

Y1