IXFA180N10T2 IXFP180N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 100V = 180A 6m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS VGSM Continuous Transient 20 30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 180 120 450 A A A IA TC = 25C 90 A EAS TC = 25C 750 mJ dV/dt IS IDM, VDD VDSS,TJ 175C 15 V/ns PD TC = 25C 480 W -55 ... +175 TJ C TJM 175 C Tstg -55 ... +175 C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 C C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g TO-220 (IXFP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages 175C Operating Temperature High Current Handling Capability Fast Intrinsic Rectifier Dynamic dV/dt Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 50A, Notes 1 & 2 (c) 2018 IXYS CORPORATION, All Rights Reserved V 4.0 V 200 nA 10 A 750 A Synchronous Rectification DC-DC Converters Battery Charges Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 6 m DS100266E(11/18) IXFA180N10T2 IXFP180N10T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 90A RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 90A Qgd E 88 S 10.5 nF 945 pF 100 pF 21 ns 37 ns 34 ns 13 ns 185 nC 48 nC 52 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.31 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, Pulse Width Limited by TJM 720 A VSD trr IRM QRM IF = 100A, VGS = 0V, Note 1 1.3 IF = 90A, VGS = 0V, -di/dt = 100A/s, VR = 50V TO-220 Outline E A oP A1 V 66 ns 5.8 A 190 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t 300s; duty cycle, d 2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA180N10T2 IXFP180N10T2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 350 180 VGS = 15V 10V 9V 8V 160 140 VGS = 15V 10V 8V 300 250 7V I D - Amperes I D - Amperes 120 100 80 6V 60 7V 200 150 6V 100 40 50 20 5V 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1 2 3 3.0 180 VGS = 15V 10V 9V 8V 7V I D - Amperes 120 6V 100 80 60 40 5V 7 8 2.2 I D = 180A 1.8 I D = 90A 1.4 1.0 0.6 20 0 0.2 0 0.5 1 1.5 2 2.5 3 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current 3.4 Fig. 6. Drain Current vs. Case Temperature 140 VGS = 10V 15V 3.0 120 External Lead Current Limit o TJ = 175 C 2.6 100 I D - Amperes RDS(on) - Normalized 6 VGS = 10V 2.6 RDS(on) - Normalized 140 5 Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 160 4 VDS - Volts VDS - Volts 2.2 1.8 1.4 80 60 40 o TJ = 25 C 20 1.0 0 0.6 0 40 80 120 160 200 240 I D - Amperes (c) 2018 IXYS CORPORATION, All Rights Reserved 280 320 360 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFA180N10T2 IXFP180N10T2 Fig. 8. Transconductance Fig. 7. Input Admittance 160 200 o 180 VDS = 10V 160 TJ = - 40 C VDS = 10V 140 120 o 25 C o g f s - Siemens I D - Amperes 140 TJ = 150 C 120 o 25 C o - 40 C 100 80 100 o 150 C 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 300 10 VDS = 50V 9 250 I D = 90A 8 I G = 10mA 7 200 VGS - Volts I S - Amperes 100 I D - Amperes VGS - Volts 150 o TJ = 150 C 100 6 5 4 3 o TJ = 25 C 50 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 100s f = 1 MHz RDS(on) Limit 25s 1ms Ciss 100 I D - Amperes Capacitance - PicoFarads 10ms 10,000 1,000 Coss Lead Current Limit 100ms DC 10 100 o TJ = 175 C Crss o TC = 25 C Single Pulse 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFA180N10T2 IXFP180N10T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 55 50 45 RG = 2 , VGS = 10V 40 VDS = 50V t r - Nanoseconds t r - Nanoseconds 35 30 25 I D = 90A 20 15 I D = 45A 50 RG = 2 , VGS = 10V 45 VDS = 50V o 40 TJ = 25 C 35 30 25 20 10 15 5 10 0 o TJ = 125 C 5 25 35 45 55 65 75 85 95 105 115 90 125 100 110 120 TJ - Degrees Centigrade 20 26 23 16 22 15 21 14 20 13 19 3 4 5 6 7 8 9 10 11 12 13 14 td(off) 16 40 15 14 36 I D = 180A 13 32 11 30 10 25 35 45 55 105 115 28 125 14 42 38 13 o TJ = 25 C 12 34 30 11 150 I D - Amperes (c) 2018 IXYS CORPORATION, All Rights Reserved 160 170 26 180 44 VDS = 50V t f - Nanoseconds o TJ = 125 C td(off) o 15 42 14 40 I D = 180A, 90A 13 38 12 36 2 3 4 5 6 7 8 9 RG - Ohms 10 11 12 13 14 15 t d(off) - Nanoseconds t f - Nanoseconds 95 TJ = 125 C, VGS = 10V 16 t d(off) - Nanoseconds 15 140 85 46 tf 46 130 75 17 VDS = 50V 120 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) RG = 2, VGS = 10V 110 34 12 15 50 100 38 I D = 90A TJ - Degrees Centigrade 17 90 42 VDS = 50V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 180 44 RG = 2, VGS = 10V RG - Ohms 16 170 t d(off) - Nanoseconds 24 I D = 90A, 180A 2 tf 17 VDS = 50V 17 160 46 18 25 t d(on) - Nanoseconds t r - Nanoseconds td(on) o TJ = 125 C, VGS = 10V 18 150 19 t f - Nanoseconds tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 19 130 I D - Amperes IXFA180N10T2 IXFP180N10T2 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_180N10T2 (V6) 01-20-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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