© 2018 IXYS CORPORATION, All Rights Reserved DS100266E(11/18)
TrenchT2TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA180N10T2
IXFP180N10T2
VDSS = 100V
ID25 = 180A
RDS(on)
6m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 175C 100 V
VDGR TJ= 25C to 175C, RGS = 1M100 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C (Chip Capability) 180 A
IL(RMS) External Lead Current Limit 120 A
IDM TC= 25C, Pulse Width Limited by TJM 450 A
IATC= 25C90 A
EAS TC= 25C 750 mJ
dV/dt IS IDM, VDD VDSS,TJ 175C 15 V/ns
PDTC= 25C 480 W
TJ-55 ... +175 C
TJM 175 C
Tstg -55 ... +175 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
G = Gate D = Drain
S = Source Tab = Drain
TO-263
(IXFA)
G
S
D (Tab)
TO-220
(IXFP)
D (Tab)
S
GD
Features
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Fast Intrinsic Rectifier
Dynamic dV/dt Rated
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Rectification
DC-DC Converters
Battery Charges
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250A 100 V
VGS(th) VDS = VGS, ID = 250A 2.0 4.0 V
IGSS VGS = 20V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 10 A
TJ = 150C 750 A
RDS(on) VGS = 10V, ID = 50A, Notes 1 & 2 6 m
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA180N10T2
IXFP180N10T2
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 50 88 S
Ciss 10.5 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 945 pF
Crss 100 pF
td(on) 21 ns
tr 37 ns
td(off) 34 ns
tf 13 ns
Qg(on) 185 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 90A 48 nC
Qgd 52 nC
RthJC 0.31 C/W
RthCS TO-220 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 180 A
ISM Repetitive, Pulse Width Limited by TJM 720 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 66 ns
IRM 5.8 A
QRM 190 nC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
IF = 90A, VGS = 0V,
-di/dt = 100A/s, VR = 50V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 90A
RG = 2 (External)
Notes: 1. Pulse test, t 300s; duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA180N10T2
IXFP180N10T2
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
120
140
160
180
0 0.10.20.30.40.50.60.70.80.9 1 1.11.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
350
012345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
5V
6V
7V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
20
40
60
80
100
120
140
160
180
00.511.522.53
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 90A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 180A
I
D
= 90A
Fig. 5. R
DS(on)
Normalized to I
D
= 90A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 40 80 120 160 200 240 280 320 360
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
T
J
= 175
o
C
T
J
= 25
o
C
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA180N10T2
IXFP180N10T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150
o
C
25
o
C
- 40
o
C
V
DS
= 10V
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
150
o
C
25
o
C
V
DS
= 10V
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 90A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1000
110100
V
DS
- Volts
I
D
- Amperes
25μs100μs
1ms
10ms
100ms
DC
R
DS(on)
Limit
T
J
= 175
o
C
T
C
= 25
o
C
Single Pulse
Lead Current Limit
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA180N10T2
IXFP180N10T2
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
5
10
15
20
25
30
35
40
45
50
55
90 100 110 120 130 140 150 160 170 180
ID - Amperes
t
r
- Nanoseconds
T
J
= 25
o
C
T
J
= 125
o
C
R
G
= 2Ω , V
GS
= 10V
V
DS
= 50V
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
13
14
15
16
17
18
19
20
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
t
r
- Nanoseconds
19
20
21
22
23
24
25
26
t
d(on)
- Nanoseconds
t r
td(on)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 50V
I
D
= 90A, 180A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
10
11
12
13
14
15
16
17
18
19
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
- Nanoseconds
28
30
32
34
36
38
40
42
44
46
t
d(off)
- Nanoseconds
t
f
td(off)
R
G
= 2Ω, V
GS
= 10V
V
DS
= 50V
I
D
= 90A
I
D
= 180A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
11
12
13
14
15
16
17
90 100 110 120 130 140 150 160 170 180
ID - Amperes
t
f
- Nanoseconds
26
30
34
38
42
46
50
t d(off)
- Nanoseconds
t
f
td(off)
R
G
= 2Ω, V
GS
= 10V
V
DS
= 50V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
0
5
10
15
20
25
30
35
40
45
50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2Ω , V
GS
= 10V
V
DS
= 50V
I
D
= 45A
I
D
= 90A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
12
13
14
15
16
17
2 3 4 5 6 7 8 9 101112131415
RG - Ohms
t
f
- Nanoseconds
36
38
40
42
44
46
t d(off)
- Nanoseconds
t
f
td(off)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 50V
I
D
= 180A, 90A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA180N10T2
IXFP180N10T2
IXYS REF: F_180N10T2 (V6) 01-20-09
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
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