TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
1
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●40 W at 25°C Case Temperature
●1 A Continuous Collector Current
●2 A Peak Collector Current
●20 mJ Reverse-Energy Rating
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 1 ms, duty cycle ≤ 2%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
TIP47
TIP48
TIP49
TIP50
VCBO
350
400
450
500
V
Collector-emitter voltage (IB = 0)
TIP47
TIP48
TIP49
TIP50
VCEO
250
300
350
400
V
Emitter-base voltage VEBO 5V
Continuous collector current IC1A
Peak collector current (see Note 1) ICM 2A
Continuous base current IB0.6 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 40 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W
Unclamped inductive load energy (see Note 4) ½LIC220 mJ
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL260 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 30 mA
(see Note 5)
IB = 0
TIP47
TIP48
TIP49
TIP50
250
300
350
400
V
ICES
Collector-emitter
cut-off current
VCE =350 V
VCE =400 V
VCE =450 V
VCE =500 V
VBE =0
VBE =0
VBE =0
VBE =0
TIP47
TIP48
TIP49
TIP50
1
1
1
1
mA
ICEO
Collector cut-off
current
VCE =150 V
VCE = 200 V
VCE =250 V
VCE = 300 V
IB=0
IB=0
IB=0
IB=0
TIP47
TIP48
TIP49
TIP50
1
1
1
1
mA
IEBO
Emitter cut-off
current VEB = 5 V IC=0 1 mA
hFE
Forward current
transfer ratio
VCE = 10 V
VCE = 10 V
IC=0.3A
IC= 1 A (see Notes 5 and 6) 30
10
150
VCE(sat)
Collector-emitter
saturation voltage IB = 0.2 A IC= 1 A (see Notes 5 and 6) 1 V
VBE
Base-emitter
voltage VCE = 10 V IC= 1 A (see Notes 5 and 6) 1.5 V
hfe
Small signal forward
current transfer ratio VCE = 10 V IC= 0.2 A f = 1 kHz 25
|hfe|Small signal forward
current transfer ratio VCE = 10 V IC= 0.2 A f = 2 MHz 5
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n on t im e I C = 1 A
VBE(off) = -5 V
IB(on) = 0.1 A
RL = 200 Ω
IB(off) = -0.1 A
(see Figures 1 and 2)
0.2 µs
toff Turn off time 2µs
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
3
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
PARAMETER MEASUREMENT INFORMATION
Figure 1. Resistive-Load Switching Test Circuit
Figure 2. Resistive-Load Switching Waveforms
tp
F
µ
100
V1
680 F
µ
V1
Vcc = 250 V
+25 V
BD135
47
Ω
100
Ω
120
Ω
15
Ω
82
Ω
100
Ω
BD136
680 F
µ
TUT
T
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
VCC
0%
C
B
90%
10%
A10%
90%
10%
90%
E
F
D
IB
IC
IB(on)
IB(off)
0%
dIB
dt ≥ 2 A/µs
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = toff
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
4
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0.01 0.1 1
hFE - Typical DC Current Gain
0
10
20
30
40
50 TCP770AA
VCE = 10 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·01 0·1 1
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
0·1
0·2
0·3 TCP770AB
IC / IB = 5
TC = 25°C
tp = 300 µs, duty cycle < 2%
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·01 0·1 1·0
VBE(sat) - Base-Emitter Saturation Voltage - V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 TCP770AC
VCE = 10 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
5
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 6.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·01
0.1
1·0
10 SAP770AA
tp = 100 µs
tp = 500 µs
tp = 1 ms
DC Operation
TIP47
TIP48
TIP49
TIP50
