RECTRON
SEMICONDUCTOR
FEATURES
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
BFS20
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted )
CHARACTERISTICS SYMBOL UNITS
V
V
V
Marking G11
0.055(1.40)
0.047(1.20)
BASE
EMITTER
COLLECTOR
1
1
2
3
2
3
DC current gain (VCE= 10V, IC= 7mA)
Collector cut-off current (VCB= 20V, IE=0)
Collector cut-off current (VCE= 15V, IC=0)
Collector cut-off current (VEB= 4V, IC=0)
Transition frequency (VCE= 10V, IC= 5mA, f=100MHZ)
Collector-emitter saturation voltage (IC= 10mA, IB= 1mA)
Base - emitter voltage (IC= 7mA, VCE= 10V)
0.9
-
-
MHz
mA
mA
mA
V
V
Collector-base breakdown voltage (IC= 100mA, IE=0)
Collector-emitter breakdown voltage (IC= 100mA, IB=0)
Emitter-base breakdown voltage (IE= 100mA, IC=0)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEO
IEBO
hFE
ICBO
VCE(sat)
VBE(on)
fT
MAX
-
275
-
0.1
-
-
0.1
0.1
120
0.3
MIN
-
-
TYP
-
-
-
-
-
-
-
-
30
20
4
-
40
-
-
-
* Power dissipation
PCM : 0.25 W (Tamb=25OC)
* Collector current
ICM : 0.025 A
* Collector-base voltage
V(BR)CBO : 30 V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".