Samsung Semiconductor, Inc. Product Selection Guide September 2006 TABLE OF CONTENTS MEMORY AND STORAGE SECTION A SYSTEM LSI PAGE DRAM DDR3 SDRAM 3a DDR2 SDRAM 3a-4a DDR SDRAM 4a-5a SDRAM 6a-7a RDRAM 7a MOBILE SDRAM 8a GRAPHICS DDR SDRAM 8a DRAM ORDERING INFORMATION 9a-11a FLASH NAND, OneNAND, NOR FLASH 12a NAND FLASH ORDERING INFORMATION 13a ASYNCHRONOUS SRAM LOW-POWER SRAM 14a LOW-VOLTAGE AND LOW-POWER SRAM 14a MICRO-POWER AND LOW-VOLTAGE SRAM 14a HIGH DENSITY, LOW POWER (UtRAM) 15a HIGH-SPEED ASYNCHRONOUS FAST SRAM 15a ASYNCHRONOUS SRAM ORDERING INFORMATION 16a SYNCHRONOUS SRAM SPB & FT SRAM 17a-18a NtRAM 18a-19a LATE-WRITE R-R SRAM 19a-20a DDR / II / II+ SRAM 20a-22a QDR / II / II+ SRAM 22a-23a SYNCHRONOUS SRAM ORDERING INFORMATION 24a MULTI-CHIP PACKAGE NAND/DRAM 25a NOR/SRAM and NOR/UtRAM 26a OneNAND/DRAM 26a NOR/DRAM 26a STORAGE HARD DISK DRIVES 27a OPTICAL STORAGE SOLUTIONS 28a-29a SECTION B PAGE ASICs ASIC ORDERING INFORMATION LCD DRIVER ICs LCD DRIVER IC ORDERING INFORMATION MOBILE APPLICATION PROCESSORS CMOS IMAGE SENSORS MICROCONTROLLERS MICROCONTROLLER ORDERING INFORMATION SERIAL EPROMS 3b - 5b 6b 7b - 8b 9b 10b 10b 11b-14b 15b 16b TFT-LCD SECTION C MONITOR/INDUSTRIAL LCD PANELS 15", 17" 19" 20.1", 21.3" 22.0", 23.0", 24.0", 30.0" LCD TV/A.V. HD 23", 26", 32", 40", 46" FULL HD 40", 46", 52", 57" MOBILE PHONES MAIN DISPLAYS MAIN + EXTERNAL DISPLAYS INFORMATION DISPLAYS 40", 46", 57", 82" DIGITAL IMAGING: ENTERTAINMENT DSC/DVC/PHOTO PRINTERS/PMP/VOIP/GAMES MOBILE AV MINI PCS/CNS/CAR TVS/P-DVDS/ INDUSTRIAL APPLICATIONS PAGE SAMSUNG SEMICONDUCTOR, INC. 3c 3c 4c 4c 5c 5c 6c 6c 7c 8c 9c Section MEMORY AND STORAGE DDR3 / DDR2 SDRAM A DDR3 SDRAM UNBUFFERED MODULES Density 256MB 512MB 512MB 1GB 1GB 2GB NOTES: Org 32Mx64 64Mx64 64Mx64 128Mx64 128Mx64 256Mx64 E7=DDR3-800 (5-5-5) Speed (Mbps) 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 F8 = DDR3-1066 (7-7-7) Part Number M378B3374EZ0-C(E7/F8/G9) M378B6573EZ0-C(E7/F8/G9) M378B6474CZ0-C(E7/F8/G9) M378B2973EZ0-C(E7/F8/G9) M378B2873CZ0-C(E7/F8/G9) M378B5673CZ0-C(E7/F8/G9) Rank 1 1 1 2 1 2 G9=DDR3-1333 (8-8-8) Composition 512Mb(32M x16) * 4 512Mb(64M x8) * 8 1Gb(64M x16) * 4 512Mb(64M x8) * 16 1Gb(128M x8) * 8 1Gb(128M x8) * 16 Package RoHS RoHS RoHS RoHS RoHS RoHS Voltage: 1.5V DDR3 SDRAM COMPONENTS Density 512Mb 512Mb 512Mb 1Gb 1Gb 1Gb NOTES: Org 128M x4 64M x8 32M x16 256M x4 128M x8 64M x16 E7=DDR3-800 (5-5-5) Speed (Mbps) 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 F8 = DDR3-1066 (7-7-7) Part Number K4B510446E-ZC(E7/F8/G9) K4B510846E-ZC(E7/F8/G9) K4B511646E-ZC(E7/F8/G9) K4B1G0446C-ZC(E7/F8/G9) K4B1G0846C-ZC(E7/F8/G9) K4B1G1646C-ZC(E7/F8/G9) G9=DDR3-1333 (8-8-8) Package 82ball FBGA 82ball FBGA 100ball FBGA 94ball FBGA 94ball FBGA 112ball FBGA Package Dimension 10x11.5mm 10x11.5mm 10x11.5mm 11x18mm 11x18mm 11x18mm Voltage: 1.5V DDR2 SDRAM REGISTERED MODULES Density 512MB 512MB 1GB 1GB 1GB 1GB 2GB 2GB 2GB 2GB 2GB 2GB 4GB 4GB NOTES: Org 64Mx72 64Mx72 128Mx72 128Mx72 128Mx72 128Mx72 256Mx72 256Mx72 256Mx72 256Mx72 256Mx72 256Mx72 512Mx72 512Mx72 00=Intel AMB Speed (Mbps) 400/533 400/533/667 400/533 400/533 400/533/667 400/533/667 400/533 400/533 400/533 400/533/667 400/533/667 400/533/667 400/533 400/533/667 01=IDT AMB Part Number M393T6553CZ3-C(CC/D5) M393T6553CZA-C(CC/D5/E6) M393T2950CZ3-C(CC/D5) M393T2953CZ3-C(CC/D5) M393T2950CZA-C(CC/D5/E6) M393T2953CZA-C(CC/D5/E6) M393T5750CZ3-C(CC/D5) M393T5660AZ3-C(CC/D5) M393T5663AZ3-C(CC/D5) M393T5750CZA-C(CC/D5/E6) M393T5660AZA-C(CC/D5/E6) M393T5663AZA-C(CC/D5/E6) M393T5168AZ0-C(CC/D5) M393T5166AZA-C(CC/D5/E6) Voltage for AMB:1.5V Parity Register N Y N N Y Y N N N Y Y Y N Y Rank 1 1 1 2 1 2 2 1 2 2 1 2 2 2 Composition (64M x8)*9 (64M x8)*9 (128M x4)*18 (64M x8)*18 (128M x4)*18 (64M x8)*18 (128M x4)*36 (256M x4)*18 (128M x8)*18 (128M x4)*36 (256M x4)*18 (128M x8)*18 st. (512M x4)*18 st. (512M x4)*18 Voltage for DRAM:1.8V Package Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Module Height=1.2" DDR2 SDRAM FULLY BUFFERED MODULES Density 512MB 512MB 1GB 1GB 2GB 2GB 4GB 4GB NOTES: Org 64Mx72 64Mx72 128Mx72 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72 00=Intel AMB SEPTEMBER 2006 Speed (Mbps) 533 667 533 667 533 667 533 533 Part Number M395T6553CZ4-CD5(00/10) M395T6553CZ4-CE6(00/10) M395T2953CZ4-CD5(00/10) M395T2953CZ4-CE6(00/10) M395T5750CZ4-CD5(00/10) M395T5750CZ4-CE6(00/10) M395T5166AZ4-CD5(00/10) M395T5166AZ4-CE6(00/10) 01=IDT AMB Voltage for AMB:1.5V BR-06-ALL-001 Rank 1 1 2 2 2 2 2 2 Composition (64M x8)*9 (64M x8)*9 (64M x8)*18 (64M x8)*18 (128M x4)*36 (128M x4)*36 st. (512M x4)*18 st. (512M x4)*18 Package Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Voltage for DRAM:1.8V Module Height=1.2" SAMSUNG SEMICONDUCTOR, INC. 3a Section A MEMORY AND STORAGE DDR2 / DDR SDRAM DDR2 DRAM SODIMM MODULES Density 256MB 512MB 1GB 1GB 2GB NOTES: Org 32Mx64 64Mx64 128Mx64 128Mx64 256Mx64 Speed (Mbps) 400/533/667 400/533/667 400/533/667 400/533/667 400/533/667 CC=PC2-3200 (DDR2-400 @ CL=3) Part Number M470T3354CZ3-C(CC/D5/E6) M470T6554CZ3-C(CC/D5/E6) M470T2953CZ3-C(CC/D5/E6) M470T2864AZ3-C(CC/D5/E6) M470T5669AZ0-C(CC/D5/E6) D5 =PC2-4200 (DDR2-533 @ CL=4) Rank 1 2 2 2 2 E6=PC2-5300 (DDR2-667 @ CL=5) Composition (32M x16)*4 (32M x16)*8 (64M x8)*16 (64M x16)*8 st.(256M x8)*8 Voltage: 1.8V Package Lead-free Lead-free Lead-free Lead-free Lead-free Module Height=1.2" DDR2 SDRAM UNBUFFERED MODULES Density 256MB 512MB 1GB 2GB NOTES: Org 32Mx64 64Mx64 128Mx64 256Mx64 CC=PC2-3200 (DDR2-400 @ CL=3) Module Height =1.2" Speed (Mbps) 400/533/667/800 400/533/667/800 400/533/667/800 400/533/667 D5 = PC2-4200 (DDR2-533 @ CL=4) Part Number M378T3354CZ3-C(CC/D5/E6E7) M378T6553CZ3-C(CC/D5/E6/E7) M378T2953CZ3-C(CC/D5/E6E7) M378T5663AZ3-C(CC/D5/E6) E6=PC2-5300 (DDR2-667 @ CL=5) Rank 1 1 2 2 Composition (32M x16)*4 (64M x8)*8 (64M x8)*16 (128M x8)*16 E7=PC2-6400 (DDR2-800 @ CL=5) Package Lead-free Lead-free Lead-free Lead-free Voltage: 1.8V DDR2 SDRAM COMPONENTS Density 512Mb 512Mb 512Mb 1Gb 1Gb 1Gb Org 128M x4 64M x8 32M x16 256M x4 128M x8 64M x16 Speed (Mbps) 400/533/667 400/533/667/800 400/533/667 400/533/667 400/533/667 400/533/667 NOTES: CC=DDR2-400 (3-3-3) D5 = DDR2-533 (4-4-4) Part Number K4T51043QC-ZC(CC/D5/E6) K4T51083QC-ZC(CC/D5/E6/E7) K4T51163QC-ZC(CC/D5/E6) K4T1G044QA-ZC(CC/D5/E6) K4T1G084QA-ZC(CC/D5/E6) K4T1G164QA-ZC(CC/D5/E6) E6=DDR2-667 (5-5-5) Package Dimension 10x11mm 10x11mm 11x13mm 11x18mm 11x18mm 11x18mm Package 60ball FBGA 60ball FBGA 84ball FBGA 68ball FBGA 68ball FBGA 84ball FBGA E7=DDR2-800 (5-5-5) Voltage: 1.8V DDR SDRAM 1U DIMM MODULES: REGISTERED Density 512MB 512MB 1GB 2GB 2GB 4GB 4GB NOTES: 4a Org 64Mx72 64Mx72 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72 Speed (Mbps) 333/400 333/400 333/400 266 333/400 266/333 400 B0 = DDR266 (133MHz @ CL=2.5) Type: 184-pin SAMSUNG SEMICONDUCTOR, INC. Composition (64Mx8)*9 (64Mx8)*9 (128Mx4)*18 (St. 256Mx4)*18 (128Mx4)*36 (St. 512Mx4)*18 (St. 512Mx4)*18 A2 = DDR266 (133MHz @ Cl=2) Part Number M312L6523DZ3 - CB3/CCC M312L6523CZ3 - CB3/CCC M312L2920CZ3 -CB3/CCC M312L5628CU0 - CB0 M312L5720CZ3-CB3/CCC M312L5128AU0-CB0/CB3 M312L5128AU1-CCC B3 = DDR333 (166MHz @ CL=2.5) BR-06-ALL-001 Component Package FBGA FBGA FBGA TSOP FBGA TSOP TSOP # Banks Module 1 1 1 2 2 2 2 Notes Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free CC = DDR400 (200MHz @ CL=3) SEPTEMBER 2006 Section MEMORY AND STORAGE DDR SDRAM A DDR DRAM SODIMM MODULES Density 512MB 512MB 1GB 1GB NOTES: Org 64Mx64 64Mx64 128MX64 128MX64 Speed (Mbps) 333 333 333 333 B0 = DDR266 (133MHz @ CL=2.5) Type: 200-pin, Double Sided Composition (32M x 16)*4 (32M x 16)*4 (64M x 8)*16 (64M x 8)*16 A2 = DDR266 (133MHz @ Cl=2) Height(in): 1.25 Part Number M470L3224CU0 -C(L)B3 M470L6524DU0-CB300 M470L2923BN0 - C(L)B3 M470L2923DV0-CB300 B3 = DDR333 (166MHz @ CL=2.5) Notes Pb-free Pb-free Pb-free CC = DDR400 (200MHz @ CL=3) DDR SDRAM DIMM MODULES: UNBUFFERED Density 512MB 512MB 512MB 512MB 1GB 1GB 1GB 1GB NOTES: Org 64MX64 64MX64 64Mx72 64Mx72 128Mx64 128Mx64 128Mx72 128Mx72 B0 = DDR266 (133MHz @ CL=2.5) Type: 184-pin Speed (Mbps) 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 A2 = DDR266 (133MHz @ Cl=2) Package: TSOP components Composition (64M x8) *8 (64M x8) *8 (64M x 8)*9 (64M x 8)*9 (64M x 8)*16 (64M x 8)*16 (64M x 8)*18 (64M x 8)*18 Part Number M368L6523CUS-CB3/CCC M368L6523DUS-CB3/CCC M381L6523CUM-CB3/CCC M381L6523DUM-CB3/CCC M368L2923CUN-B3/CCC M368L2923DUN-CB3/CCC M381L2923CUM-CB3/CCC M381L2923DUM-CB3/CCC B3 = DDR333 (166MHz @ CL=2.5) Voltage: 2.5V Notes Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free CC = DDR400 (200MHz @ CL=3) DDR SDRAM COMPONENTS Density 256M 256M 256M 256M 256M 256M 512M 512M 512M 512M 512M 512M 512M 512M 512M 512M 1Gb 1Gb 2Gb NOTES: Org 64Mx4 64Mx4 32Mx8 32Mx8 16Mx16 16Mx16 128Mx4 128Mx4 128Mx4 128Mx4 64Mx8 64Mx8 64Mx8 32Mx16 32Mx16 32Mx16 256Mx4 128Mx8 25MX4 *2 B0 = DDR266 (133MHz @ CL=2.5) SEPTEMBER 2006 Speed (Mbps) 266 333/400 333/400 333/400 333/400 333/400 266 266 333/400 333/400 266/333/400 333/400 333/400 333/400 333/400 333/400 266/333/400 266/333/400 333 A2 = DDR266 (133MHz @ Cl=2) BR-06-ALL-001 Part Number K4H560438H-UC(L)B0 K4H560438H-ZC(L)CC/B3 K4H560838H-UC(L)B3/CCC K4H560838H-ZC(L)B3/CCC K4H561638H-UC(L)/B3/CCC K4H561638H-ZC(L)B3/CCC K4H510438C-UC(L)B0 K4H510438D-UC(L)B0 K4H510438C-ZC(L)B3/CCC K4H510438D-ZC(L)B3/CCC K4H510838C-UC(L)B0/B3/CCC K4H510838C-ZC(L)B3/CCC K4H510838D-UC(L)B3/CCC K4H511638C-UC(L)B3/CCC K4H511638C-ZC(L)B3/CCC K4H511638D-UC(L)B3/CCC K4H1G0438A-UCB0/B3/CCC K4H1G0838A-UCB0/B3/CCC K4H2G0638A-UCB3000 B3 = DDR333 (166MHz @ CL=2.5) Package 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 66 pin TSOP 60 ball FBGA 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 66 pin TSOP 60 ball FBGA 66 pin TSOP 66 pin TSOP 66 pin TSOP 66 pin TSOP Notes Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free CC = DDR400 (200MHz @ CL=3) SAMSUNG SEMICONDUCTOR, INC. 5a A Section MEMORY AND STORAGE SDRAM 1U SDRAM DIMM MODULES, PC133 / PC100 COMPLIANT: REGISTERED LOW-PROFILE DIMMs (1.2-INCH HEIGHT) Density 128MB** 256MB 512MB 1GB 1GB 2GB Org 16Mx72 32Mx72 64Mx72 128Mx72 128Mx72 256Mx72 Speed PC133 PC133 PC133 PC133 PC133 PC133 Composition (16x8)*9 (32Mx8)*9 (64Mx4)*18 (St.128Mx4)*18 (128Mx4)*18 (St.128Mx4)*18 NOTES: St. = Stacked components Type: 168 pin, Double sided **Die rev. change - 128Mb component F-die to I-die Part Number M390S1723ITU - C7A00 M390S3253HUU - C7A00 M390S6450HUU - C7A00 M390S2858ETU - C7A00 M390S2950DUU - C7A00 M390S5658DUU - C7A00 Package: TSOP Components stacked, avail Q204 # Banks Module 1 1 2 2 2 2 Refresh 8K 8K 8K 8K 8K Comments stacked Voltage: 3.3V SDRAM SODIMM MODULES Density 128MB** 256MB 256MB 512MB 512MB Org 16Mx64 32Mx64 32Mx64 64Mx64 64Mx64 Speed PC133 PC133 PC133 PC133 PC133 Composition (8Mx16)*8 (16Mx16)*8 (32Mx16)*4 (32Mx16)*8 (64Mx8)*16 NOTES: DS = Double-Sided L = Commercial Temp., Low Power ** Die rev. change - 128Mb component F-die to I-die Interface: SSTL-2 Part Number M464S1724ITS-L7A00 M464S3254HUS-L7A00 M464S3354DUS-C(L)7A M464S6554DUS-C(L)7A M464S6453HV0-C75/L7500 # Banks: 4 Height (in) 1.15 1.25 1.25 1.18 1.25 Latency: CL6 # Banks Module 1 1 1 1 2 Refresh: 8K/32ms SDRAM DIMM MODULES, PC133 COMPLIANT: UNBUFFERED Density 128MB** 128MB 128MB** 128MB 128MB** 128MB** 256MB 256MB 256MB 512MB 1GB NOTES: 6a Org 16Mx64 16Mx64 16Mx72 16Mx72 32Mx64 32Mx72 32Mx64 32Mx64 32Mx64 64Mx64 128Mx64 Speed (Mbps) PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 Type: 168 pin Package: TSOP components **Die rev. change - 128Mb component F-die to I-die SAMSUNG SEMICONDUCTOR, INC. Composition 128M: (16Mx8)*8 256M: (16Mx16)*4 128M: (16Mx8)*9 256M: (16Mx16)*5 128M: (16Mx8)*16 128M: (16Mx8)*18 256M: (32Mx8)*8 256M: (16Mx16)*8 256M: (32Mx8)*8 256M: (32Mx8)*16 512M: (64Mx8)*16 Part Number M366S1723ITS-C7A00 M366S1654HUS-C7A00 M374S1723ITS-C7A00 M374S1654ETS- C7A00 M366S3323ITS- C7A00 M374S3323ITS-C7A00 M366S3253HUS-C7A00 M366S3254HUS-C7A00 M366S3253US-C7A00 M366S6453HUS-C7A00 M366S2953DUS-C7A00 # Banks Module 1 1 1 1 2 2 1 1 1 2 2 Voltage: 3.3V BR-06-ALL-001 SEPTEMBER 2006 Section MEMORY AND STORAGE SDRAM A SDRAM COMPONENTS Density 64Mb** 64Mb** 64Mb** 128Mb** 128Mb** 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 512Mb 1Gb Org 8Mx8 4Mx16 2Mx32 16Mx8 8Mx16 64Mx4 32Mx8 16Mx16 128Mx4 64Mx8 128Mx4 64Mx8 32Mx16 256Mx4 NOTES: 1 L = Commercial Temp., Low Power 2 # Banks: 4 3 Package: TC = TSOP; UC = Lead Free Speed (Mbps) 133 133/143/166 143/166/200 133 133/166 133 133 133/166 133 133 133 133 133 133 Part Number K4S640832K-UC(75)000 K4S641632K-UC(L)(75/70/60)000 K4S643232H-UC(70/60/50)000 K4S280832I-UC(L)(75)000 K4S281632I-UC(L)(75/60)000 K4S560432H-UC(L)(75)000 K4S560832H-UC(L)(75)000 K4S561632H-UC(L)(75/60)000 K4S510632D-UC(L)(75)000 K4S510732D-UC(L)(75)000 K4S510432D-UC(L)(75)000 K4S510832D-UC(L)(75)000 K4S511632D-UC(L)(75)000 K4S1G0632D-UC(L)(75)000 4 Voltage: 3.3V 5 Speed: PC133 (133MHz CL=3/PC100 CL2) 6 For Ind. Temp., check with SSI Marketing Refresh 4K 4K 4K 4K 4K 8K 8K 8K 8K 8K 8K 8K 8K 8K Pkg TSOP 54 54 86 54 54 54 54 54 54 54 54 54 54 54 Comments stacked stacked stacked * In EOL process **Die rev. change - 64Mb H-die to K-die, 128Mb F-die to I-die RDRAM COMPONENTS Density 128M 288M 576M* Org x16 x18 x18 Speed (Mbps) 800/1066 800/1066 1066 Part Number K4R271669F-SCK8/S8 K4R881869E-GCM8/T9 K4R761869A-GCT9 Speed (Mbps) 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps # of Devices 4 8 16 4 8 16 4 8 8 Refresh 16K/32ms 16K/32ms 32K/32ms Package 54ball FBGA 92ball FBGA 92ball FBGA Notes lead-free only lead-free only NOTES: Voltage: 2.5 v * In EOL Process RIMMTM MODULES Density 128MB ECC 256MB ECC 512MB ECC 128MB NON-ECC 256MB NON-ECC 512MB NON-ECC 144MB NexMod 288MB NexMod 576MB NexMod * Org x18 x18 x18 x16 x16 x16 x18 x18 x18 Part Number MR18R1624EG0-CM8/T9 MR18R1628EG0-CM8/T9 MR18R162GEG0-CM8/T9 MR16R1624EG0-CM8/T9 MR16R1628EG0-CM8/T9 MR16R162GEG0-CM8/T9 MN18R1624EF0-CT9 MN18R1628EF0-CT9 MN18R3268AEF0-CT9 Component 288Mb 288Mb 288Mb 256Mb 256Mb 512Mb 288Mb 288Mb 576Mb Comments lead-free only lead-free only lead-free only lead-free only lead-free only lead-free only lead-free only lead-free only lead-free only NOTES: * In EOL Process SEPTEMBER 2006 BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 7a A Section MEMORY AND STORAGE Mobile SDRAM/Graphics DDR SDRAM MOBILE SDRAM COMPONENTS Density 64Mb 64Mb 64Mb 64Mb 64Mb 128Mb 128Mb 128Mb 128Mb 128Mb 128Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb Org 4Mx16 4Mx16 4Mx16 2MX32 2MX32 8MX16 8MX16 8MX16 4MX32 4MX32 4MX32 16Mx16 16Mx16 16Mx16 16Mx16 8Mx32 8Mx32 8Mx32 8Mx32 32Mx16 32Mx16 32Mx16 32Mx16 16Mx32 16Mx32 16Mx32 16Mx32 Part Number K4M641633K-(1)(2)(3)(4) K4M64163LK-(1)(2)(3)(4) K4M64163PK-(1)(2)(3)(4) K4S643233H-(1)(2)(3)(4) K4S64323LH-(1)(2)(3)(4) K4M281633H-(1)(2)(3)(4) K4M28163LH-(1)(2)(3)(4) K4M28163PH-(1)(2)(3)(4) K4M283233H-(1)(2)(3)(4) K4M28323LH-(1)(2)(3)(4) K4M28323PH-(1)(2)(3)(4) K4M561633G-(1)(2)(3)(4) K4M56163LG-(1)(2)(3)(4) K4M56163PG-(1)(2)(3)(4) K4X56163PG-(1)(2)(3)(4) K4M563233G-(1)(2)(3)(4) K4M56323LG-(1)(2)(3)(4) K4M56323PG-(1)(2)(3)(4) K4X56323PG-(1)(2)(3)(4) K4M511633C-(1)(2)(3)(4) K4M51163LC-(1)(2)(3)(4) K4M51163PC-(1)(2)(3)(4) K4X51163PC-(1)(2)(3)(4) K4M513233C-(1)(2)(3)(4) K4M51323LC-(1)(2)(3)(4) K4M51323PC-(1)(2)(3)(4) K4X51323PC-(1)(2)(3)(4) NOTES: (1) Package: Leaded / Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X /Z: 54balls BOC Mono J /V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.8pitch S / D: 90balls FBGA Monolithic (11mm x 13mm) F/H: Smaller 90balls FBGA Mono Y/P: 54balls CSP DDP M/E: 90balls FBGA DDP (2) Temp & Power: C : Commercial(-25 ~ 70'C), Normal L : Commercial, Low, i-TCSR F : Commercial, Low, i-TCSR & PASR & DS Refresh 4K 4K 4K 4K 4K 4K 4K 4K 4K 4K 4K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K E : Extended(-25~85'C), Normal N : Extended, Low, i-TCSR G : Extended, Low, i-TCSR & PASR & DS I : Industrial(-40~85'C), Normal P : Industrial, Low H : Industrial, Low, i-TCSR & PASR & DS # Pins TSOP/BGA FBGA-54balls FBGA-54balls FBGA-54balls FBGA-90balls FBGA-90balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-90balls FBGA-90balls FBGA-90balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-60balls FBGA-90balls FBGA-90balls FBGA-90balls FBGA-90balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-60balls FBGA-90balls FBGA-90balls FBGA-54balls FBGA-54balls Power 3.0V 2.5V 1.8V 3.0V 2.5V 3.0V 2.5V 1.8V 3.0V 2.5V 1.8V 3.0V 2.5V 1.8V 1.8V 3.0V 2.5V 1.8V 1.8V 3.0V 2.5V 1.8V 1.8V 3.0V 2.5V 1.8V 1.8V (3)~(4) Speed: Mobile-SDRAM 60: 166MHz, CL 3 75: 133MHz, CL 3 80: 125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3 15: 66MHz, CL 2 & 3 Mobile-DDR C3: 133MHz, CL 3 C2: 100MHz, CL 3 C0: 66MHz, CL 3 GRAPHICS DDR SDRAM COMPONENTS Type GDDR4 GDDR3 Density 512Mb 512Mb Org 16Mx32 16Mx32 Die E C Part Number K4U52324Q K4J52324Q 512Mb 16Mx32 E K4J52324Q 256Mb 8Mx32 G K4J55323Q GDDR2 512Mb 256Mb 32Mx16 16Mx16 C G K4N51163Q K4N56163Q GDDR1 256Mb 128Mb 16Mx16 4Mx32 H G K4D551638 K4D26323Q K4D263238 K4D263238 K4D263238 K4D261638 I 8Mx16 NOTES: I * clock cycle time Part No. Suffix Description VDD/VDDQ 1.8/1.8V 1.8/1.8V 2.0/2.0V 1.8/1.8V 1.9/1.9V 1.8/1.8V 2.0/2.0V 1.8/1.8V 1.8/1.8V 2.0/2.0V 2.35~2.7V 1.8/1.8V 2.5/2.5V 2.5/2.5V 2.5/2.5V 2.5/2.5V Speed Bin (MHz) 1100/1200/1400 500/600/700 800/900/1000 700/800 900/1000 700/800 900/1000 300/350/400 350/400 450/500 200/250 300/350 300/350 200/250 200/250 200/250 Remarks CS now EOL'd EOL'd CS now CS now EOL'd EOL'd CL-tRCD-tRP 3-3-3 for 200Mhz ** all products are 4 banks 07 08 09 1A 11 12 14 16 20 22 25 2A 33 40 50 0.71ns 0.83ns 0.90ns 1ns 1.11ns 1.25ns 1.429ns 1.667ns 2.0 ns 2.2 ns 2.5 ns 2.86 NS 3.3 ns 4.0 ns 5.0 ns (1000MHz) (900MHz) (800MHz) (700MHz) (600MHz) (500MHz) (450MHz) (400MHz) (350MHz) (300MHZ) (250MHz) (1400MHz) (1200MHz) (1100MHz) 8a Package 136 FBGA 136 FBGA 136 FBGA 136 FBGA 136 FBGA 136 FBGA 136 FBGA 84 FBGA 84 FBGA 84 FBGA 66 TSOPII 144 FBGA 144 FBGA 144 FBGA 100 TQFP 66 TSOPII SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-001 (200MHz) SEPTEMBER 2006 Section MEMORY AND STORAGE DRAM Ordering Information A DRAM ORDERING INFORMATION K 1 1. 2. 4 2 X 3 X 4 X 5 X 6 X 7 Memory (K) DRAM:4 X 8 X 9 X 10 11 X 12 X 14 X 15 S: SSTL-2, 2.2V, 1.8V 68: 768M, 8K/64ms U: DRSL, 1.8V, 1.2V 72: 72M, 8K/32ms Y: SSTL(LP), 2.5V, 2.5V 80: 8M, 2K/32ms A:Advanced Dram Technology 88: 288M, 16K/32ms M: 1st Generation B:DDR3 SDRAM 89: 288M, 8K/32ms A: 2nd Generation D: DDR SGRAM 1G: 1G, 8K/64ms B: 3rd Generation E: EDO 2G: 2G, 8K/64ms C: 4th Generation F: FP 4G: 4G, 8K/64ms D: 5th Generation H: DDR SDRAM 2A: 128M, 4K/64ms with TCSR E: 6th Generation J: GDDR3 SDRAM 5A: 256M, 8K/64ms with TCSR F: 7th Generation K: Mobile SDRAM PEA 6A: 64M, 4K/64ms with TCSR G: 8th Generation M: Mobile SDRAM R: Direct RDRAM S: SDRAM V: Mobile DDR SDRAM PEA X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM 8. 4~5. Density, Refresh 111: 1G, 64K/16ms 17: 16M, 4K/64ms 26: 128M, 4K/32ms 27: 128M, 16K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 40: 4M, 512/8ms 41: 4M, 1K/16ms 44: 144M, 16K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 57: 256M, 16K/32ms 58: 256M, 8K/32ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms SEPTEMBER 2006 01: x1 02: x2 04: x4 05: x4 (2CS) 03: x2 (Including x1) J: 11th Generation K: 12th Generation Y: Partial DRAM(2nd) Z: Partial DRAM (for RAMOSTAK Product) 07: x8 Stack (Flexframe) U: GDDR4 SDRAM 16: 16M, 2K/32ms I: 10th Generation 06: x4 Stack (Flexframe) T: DDR SDRAM II 15: 16M, 1K/16ms X 18 H: 9th Generation 6~7. Organization N: DDR SGRAM II PEA: Power Efficient Address X 17 10. Generation Small Classification L: Mobile L2RAM X 16 66: 64M, 8K/64ms 76: 576M, 32K/32ms 3. X 13 9. 08: x8 09: x9 15: x16 (2CS) 16: x16 17: x16 (Including x8/ x4) 18: x18 30: x32 (2CS, 2CKE) 31: x32 (2CS) 32: x32 36: x36 11. " ----" 12. Package - Advanced DRAM Technology A8: x8 Stack (70-mono) G: WBGA Bank T: TSOP2 Z: BOC(LF) L: TSOP2-400F(LF) 1: 1Bank 2: 2Bank 3: 4Bank - DDR SDRAM 4: 8Bank 5: 16Bank 6: 32Bank J: TSOP2-400(LF, DDP) T: TSOP2-400 K: TSOP2-400(DDP) U: TSOP2-400(LF) Interface,VDD,VDDQ G: BOC, WBGA Z: BOC(LF) 0: NONE, NONE, NONE P: BOC(DDP) Q: ISM 1: TTL, 5.0V, 5.0V N: STSOP2 V: STSOP2(LF) 2: LVTTL, 3.3V, 3.3V S: POP(DDP) X: POP(LF, DDP) 3: LVTTL, 3.0V, 3.0V - DDR SDRAM II 4: LVTTL, 2.5V, 2.5V G: BOC Z: BOC(LF) 5: SSTL(LP), 1.8V, 1.8V S: BOC(Smaller) Y: BOC(Smaller, LF) 6: SSTL, 1.5V, 1.5V R: WLP 7: SSTL-2, 3.3V, 2.5V - DDR3 SDRAM 8: SSTL-2, 2.5V, 2.5V G: BOC 9: RSL, 2.5V, 2.5V - DDR SGRAM A: SSTL, 2.5V, 1.8V E: FBGA(LF, DDP) G : FBGA H: SSTL-2 DLL, 3.3V, 2.5V J: FBGA(DDP) V: FBGA(LF) J: LVTTL, 3.0V, 1.8V P: FBGA(LLDDP) M: FBGA(1DQS) L: LVTTL, 2.5V, 1.8V N: FBGA(1DQS,LF) H: BOC M: LVTTL, 1.8V, 1.5V L: TSOP2-400(LF) T: TSOP2-400 N: LVTTL, 1.5V, 1.5V Q: TQFP U: TQFP(LF) Z: BOC(LF) P: LVTTL, 1.8V, 1.8V Q: SSTL, 1.8V, 1.8V R: SSTL-2, 2.8V, 2.8V BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 9a A Section MEMORY AND STORAGE DRAM Ordering Information DRAM ORDERING INFORMATION K 1 4 2 X 3 X 4 X 5 X 6 - DDR SGRAM II G: FBGA, BOC X 7 X 8 X 9 X 10 11 X 12 Mobile DDR SDRAM Z: BOC (LF) - GDDR3 SDRAM X 13 X 14 X 15 X 16 X 17 X 18 E: Extended, Normal 1: MCP 6: MCP(LF) N: Extended, Low 4: 96-FBGA 5: 96-FBGA(LF) G: Extended, Low, PASR & TCSR A: 136-FBGA, BOC B: 136-FBGA, BOC(LF) 7: 90-FBGA 8: 90-FBGA(LF) U: Extended, Super Low G: FBGA, BOC V: FBGA, BOC(LF) F: WBGA(LF, 0.8MM) J: WBGA S: Extended, Super Low, PASR & TCSR L: WBGA(0.8MM) T: TSOP2 X: Extra Extend, Normal - Direct RDRAM F: WBGA G: WBGA(LF)3) V: WBGA(LF) Q: ISM I: Industrial, Normal H: WBGA(LF, B/ L 320) J: MWBGA(LF) S: POP X: POP(LF, DDP) P: Industrial, Low M: BGA(R) packages1) (M)2) BGA(R) Mobile DDR SDRAM PEA H: Industrial, Low, PASR & TCSR 6: POP MONO(LF) 7: 90-FBGA D: Industrial, Super Low P: MWBGA R: 54-WBGA 8: 90-FBGA(LF) F: 60-FBGA(LF) T: Industrial, Super Low, PASR & TCSR S: 54-BGA(R) packages T: 54-WBGA(LF) L: 60-FBGA Q: ISM - WAFER,CHIP BIZ Level Classification S: POP(DDP) X: POP(LF, DDP) 0: NONE, NONE N: packages - EDO B: SOJ-300 J: SOJ-400 XDR DRAM 1: DC test only J: BOC(LF) N: STSOP2 P: BOC T: TSOP2-400 U: TSOP2-400(LF) SDRAM F: TSOP2-300 H: TSOP2-300(LF) 1: MCP 2: 90-FBGA(DDP) 3: 90-FBGA(DDP, LF) 4: 96-FBGA - FP 2: DC test, WBI 3: DC, several AC test, WBI 14~15. Speed (Wafer/Chip Biz/BGD: 00) B: SOJ-300 J: SOJ-400 5: 96-FBGA(LF) A: 52-CSP(LF) - DDR SDRAM F: TSOP2-300 H: TSOP2-300(LF) G: CSP(except 54 Pin) R: 54-CSP A0: 10ns@CL2 A1: 8ns B: 54-CSP(LF) D: 90-FBGA(LF) A2: 7.5ns@CL2 E: 90-FBGA (LF, MCP) S: 90-FBGA AA :7.5ns@CL2,TRCD2,TRP2 M: 90-FBGA(MCP) F: Smaller 90FBGA B0: 7.5ns@CL2.5 B3: 6ns@CL2.5 N: STSOP2 T: TSOP2-400 U: TSOP2-400(LF) - Mobile SDRAM 1: MCP 6: MCP(LF) H: Smaller 90FBGA(LF) K: TSOP2-400(DDP) B4: 5ns@CL2.5 C3: 6ns@CL3 2: 90-FBGA(DDP) 3: 90-FBGA(DDP,LF) N: STSOP2 V: STSOP2(LF) C4: 5ns@CL3 C5: 3.75ns@CL3 4: 96-FBGA 5: 96-FBGA(LF) T: TSOP2-400 U: TSOP2-400(LF) CA: 5.5ns@CL3 R: 54-CSP B: 54-CSP(LF) Y: 54-CSP(DDP) P: 54-CSP(LF, DDP) CC: 5ns@CL3,TRCD3,TRP3 J: WBGA V: WBGA(LF) X: BOC Z: BOC(LF) CE: 5ns@CL3, TRCD3, TRPS3(2.5V) M: FBGA(MCP) E: FBGA(LF, MCP) DRAM COMMON D4: 5ns@CL4 F: Smaller 90 FBGA C: CHIP BIZ H: Smaller 90 FBGA(LF) (M): Mirror (LF): Lead Free Y: 54-CSP(DDP) W: WAFER Q: ISM S: 90-FBGA D: 90-FBGA(LF) DS: Daisychain M0: 10ns@CL1.5 <Only DDR SDRAM TPB code> S0: SH BIN(TPB) V0: SH 2/ 2/ 2 BIN P: 54-CSP(LF, DDP) T: TSOP2-400 CD: 4ns@CL3 13. Temp, Power W0: SH 3/ 3/ 3 BIN X0: Uniq. BIN - COMMON (Temp, Power) Y0: SH 3/ 4/ 4 BIN Mobile SDRAM PEA 0: NONE, NONE - DDR SDRAM II F: Smaller 90-FBGA A: Automotive, Normal C4: 5ns@CL3 C: Commercial, Normal CC: 5ns@CL3,TRCD3,TRP3 J: Commercial, Medium CF: 3.75ns@CL3(1.9V) L: Commercial, Low D4: 5ns@CL4 D5: 3.75ns@CL4 F: Commercial, Low, PASR & TCSR D6: 3.0ns@CL4 D7: 2.5ns@CL4 B: Commercial, Super Low DH: 3ns@CL4(1.9V) R: Commercial, Super Low, PASR & TCSR DS: Daisychain Sample E4: 5ns@CL5 K: Commercial, Reduced E5: 3.75ns@CL5 E6: 3.0ns@CL5 E7: 2.5ns@CL5 F6: 3.0ns@CL6 H: Smaller 90-FBGA(LF) S: 90-FBGA D: 90-FBGA(LF) C5: 3.75ns@CL3 F7: 2.5ns@CL6 - DDR3 SDRAM E7: 2.5ns@CL5 F6: 3.0ns@CL6 F7: 2.5ns@CL6 10a SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-001 SEPTEMBER 2006 Section MEMORY AND STORAGE DRAM Ordering Information A DRAM ORDERING INFORMATION K 1 4 2 X 3 X 4 X 5 X 6 X 7 X 8 X 9 X 10 11 X 12 40: 40ns 45: 45ns C3: 7.5ns@CL3 50: 50ns 60: 60ns CA: 9ns@CL3 X 14 X 15 X 16 X 17 X 18 - GDDR3 SDRAM - Mobile DDR SDRAM PEA - EDO & FP (tRAC) X 13 C6: 6ns@CL3 11: 1.1ns 12: 1.25ns 14: 1.429ns 15: 1.5ns(667MHz) 16: 1.667ns 18: 1.818ns 20: 2.0ns 22: 2.2ns - Direct RDRAM (tCC, tRAC) - Mobile L2RAM C6: 300MHz, 53.3ns w/ consumer PKG L0: 100Mhz, CL3 C8: 400MHz, 45ns w/ consumer PKG L2: 166Mhz, CL4 25: 2.5ns 30: 3.0ns C9: 533MHz, 32ns w/ consumer PKG - SDRAM (tCC: Default CL3) 33: 3.3ns 36: 3.6ns G6: 300MHz(3.3ns), 53.3ns 10: 10ns, PC66 40: 4.0ns 1A: 1.0ns K7: 356MHz(2.8ns), 45ns 15: 15ns K8: 400MHz(2.5ns), 45ns 1H: 10ns@CL2, PC100 1L: 10ns, PC100 M8: 400MHz(2.5ns), 40ns 33: 3.3ns 40: 4ns M9: 533MHz(1.9ns), 35ns 45: 4.5ns 50: 5ns N1: 600MHz(1.667ns), 32ns 55: 5.5ns 56: 5.6ns A2: 2.4Gbps, 36ns, 16Cycles N9: 533MHz(1.9ns), 32ns 60: 6ns 67: 6.7ns A3: 3.2Gbps, 27ns, 16Cycles P3: 667Mhz(1.5ns), 31ns 70: 7ns 74: 7.4ns B3: 3.2Gbps, 35ns, 20Cycles R6: 800Mhz(1.25ns), 27ns 75: 7.5ns, PC133 B4: 4.0Gbps, 28ns, 20Cycles S8: 400MHz, 45ns SC 7B: 7.5ns PC133, CL3, TRCD2, TRP2 C3: 3.2Gbps, 35ns, 24Cycles S9: 533MHz(1.9ns), 35ns SC 7C: 7.5ns PC133, CL2, TRCD2, TRP2 C4: 4.0Gbps, 28ns, 24Cycles T9: 533MHz(1.9ns), 32ns, tDAC 3 80: 8ns DS: Daisychain Sample DS: Daisychain Sample 96: 9.6ns *SC (Short channel) DP: Daisychain (PCB) L1: 133Mhz, CL3 12: 12ns 2A: 2.86ns 90: 9ns 15: 1.5ns(667MHz) XDR DRAM DRAM COMMON DS: Daisychain DY: Daisychain (Sanyo PCB) - Mobile SDRAM - GDDR4 SDRAM 00: NONE 16. Packing Type (16 digit) 15: 15ns@CL2 1H: 10ns@CL2 < Only SDRAM TPB Code > 1L: 10ns@CL3 75: 7.5ns@CL3 S0: 7.0ns BIN T0: 5.5ns BIN Common to all products, except of Mask ROM 80: 8ns@CL3 U0: 6.0ns BIN V0: 7.5ns BIN Divided into TAPE & REEL(In Mask ROM, divided into 90: 9.0ns@CL3(12ns@CL2) W0: 8.0ns BIN G0: 5.6ns BIN TRAY, AMMO Packing Separately) 95: 9.5ns@CL3(12ns@CL2) - DDR SGRAM (tCC: Default CL3) DP: Daisychain (PCB) 20: 2.0ns 21: 2.1ns(475MHz) Type DS: Daisychain Sample 22: 2.2ns(450MHz) 25: 2.5ns Component TAPE & REEL DY: Daisychain (Sanyo PCB) 30: 3ns 33: 3.3ns - Mobile SDRAM PEA 35: 3.5ns 36: 3.6ns 3N 3.32ns(301MHz) 40: 4ns 75: 7.5ns@CL3 45: 4.5ns 50: 5ns 90: 9.0ns@CL3(12ns@CL2) 55: 5.5ns 1L: 10ns@CL3 60: 6ns@CL3 - Mobile DDR SDRAM Packing Type New Marking T Other (Tray, Tube, Jar) 0 (Number) Stack S Component TRAY Y 60: 6ns (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M 70: 7ns 2A: 2.86ns(350MHz) C0: 15ns@CL3 C2: 10ns@CL3 2B: 2.94ns(340MHz) 2C: 2.66ns(375MHz) C3: 7.5ns@CL3 C6: 6ns@CL3 5A: 5ns@CL3(TRCD3, TRP3) CA: 9ns@CL3 < Only SDRAM TPB Code> NOTES: DP: Daisychain (PCB) S0: 4.0ns BIN 1) gBGA(R) packages are registered trademarks of Tessera. DS: Daisychain - DDR SGRAM II 2) (M): Mirror DY: Daisychain (Sanyo PCB) 12: 1.25ns 14: 1.429ns 15: 1.5ns (667MHz) 16: 1.667ns 18: 1.818ns 1K: 1.996ns 2A: 2.86ns(350MHz) 20: 2ns 22: 2.2ns 25: 2.5ns 30: 3.0ns 33: 3.3ns 3) (LF): Lead Free 37: 3.75ns SEPTEMBER 2006 BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 11a A Section MEMORY AND STORAGE Flash NAND FLASH DISCRETE COMPONENTS Density SLC 256Mb 512Mb 1Gb 2Gb 4Gb 8Gb 16Gb 32Gb TSOP Part Number BGA/LGA Part Number Organization Voltage(V) Package K9F5608U0D-PCB K9F1208U0B-PCB K9F1G08U0A-PCB K9F2G08U0A-PCB K9F4G08U0A-PCB K9K8G08U0A-PCB K9WAG08U1A-PCB K9NBG08U5A-PCB K9F5608U0D-JIB K9F1208U0B-JIB K9F1G08U0A-JIB K9F2G08U0A-IIB K9F4G08U0A-IIB K9K8G08U0A-IIB K9WAG08U1A-IIB N/A x8 x8 x8 x8 x8 x8 x8 x8 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 48TSOP, 63FBGA 48TSOP, 63FBGA 48TSOP, 63FBGA 48TSOP, 52ULGA 48TSOP, 52ULGA 48TSOP, 52ULGA 48TSOP, 52TLGA DSP 48TSOP MLC 8Gb 16Gb 32Gb K9G8G08U0M-PCB K9LAG08U0M-PCB K9HBG08U1M-PCB N/A N/A N/A x8 x8 x8 3.3V 3.3V 3.3V 48TSOP 48TSOP 48TSOP NOTE: Comments Best case for S/B long-term support Moving to B-die in Q4'06 All parts lead free OneNANDTM FLASH Density 128Mb Part Number KFG2816U1M-PIB0000 KFG2816Q1M-DEB0000 KFG2816U1M-DIB0000 KFG5616Q1M-PEB0000 KFG5616U1A-PIB5000 KFG5616Q1A-DEB5000 KFG5616U1A-DIB5000 KFG1216Q2A-DEB5000 KFG1216U2A-DIB5000 KFG1G16Q2M-DEB5000 KFG1G16Q2A-DEB6000 KFH2G16Q2M-DEB5000 KFG2G16Q2M-DEB6000 KFW4G16Q2M-DEB5000 KFN4G16Q2M-DEB8000 256Mb 256Mb 512Mb 1Gb 2Gb DDP 2Gb mono 4Gb QDP 4Gb DDP NOTE: Organization x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 Package 48TSOP (12x20) 67 FBGA (7x9) 48 TSOP 48TSOP (12x20) 67 FBGA (7x9) 63 FBGA (9.5x12) 63 FBGA(10x13) 63 FBGA(10x13) 63 FBGA (11x13) 63 FBGA (11x13) 63 FBGA (11x13) 63 FBGA (11x13) Voltage(V) 3.3V 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V Temperature Industrial Extended Industrial Extended Industrial Extended Industrial Extended Industrial Extended Extended Extended Extended Extended Extended Voltage 3.3V 3.3V 3.3V 3.3V 1.8V 3.3V 3.3V 1.8V 1.8V 1.8V Temperature Industrial Industrial Industrial Industrial Industrial Industrial Industrial Extended Extended Extended Comments No New Design No New Design No New Design No New Design All parts lead free NOR FLASH Density 16Mb 32Mb 64Mb 128Mb 256Mb NOTE: 12a TSOP Part Number K8D1716UTC-PI07 K801716UBC-PI07 K8D3216UTC-PI07 K8D3216UBC-PI07 N/A K8D6316UTM-PI07 K8D6316UBM-PI07 N/A N/A N/A FBGA Part Number K8D1716UTC-FI07 K8D1716UBC-FI07 N/A N/A K8S3215ETE-SE7C K8D6316UTM-DI07 K8D6316UBM-DI07 K8S6415ETB-DE7C K8S2815ETB-SE7C K8S5615ETA-SE7C Block Architecture Top Bottom Top Bottom Top Top Bottom Top Top Top Comments Dual Bank, Async Dual Bank, Async Dual Bank, Async Dual Bank, Async Mux'd Burst Dual Bank, Async Dual Bank, Async Mux'd Burst Mux'd Burst Mux'd Burst All parts lead free SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-001 SEPTEMBER 2006 Section MEMORY AND STORAGE NAND Flash Ordering Information A NAND FLASH ORDERING INFORMATION K 1 9 2 X 3 X 4 X 5 X 6 1. Memory (K) 3. Small Classification (SLC: Single Level Cell, MLC: Multi Level Cell, SM: SmartMedia, S/B: Small Block) A: SLC + Muxed I/F Chip B: Muxed I/F Chip S: SLC Single SM D: SLC Dual SM Q: 4CHIP SM T: SLC SINGLE (S/B) E: SLC DUAL (S/B) R: SLC 4DIE STACK (S/B) F: SLC Normal G: MLC Normal K: SLC 2-Die Stack W: SLC 4-Die Stack J: Non-Muxed OneNAND U: 2 STACK MSP V: 4 STACK MSP 4~5. Density 16: 16M 32: 32M 56: 256M 80: 8M 2G: 2G 8G: 8G 6~7. Organization 00: NONE 16: x16 X 8 X 9 X 10 11 8. Vcc 2. NAND Flash: 9 12: 512M 28: 128M 40: 4M 64: 64M 1G: 1G 4G: 4G 00: NONE X 7 08: x8 X 12 X 13 X 14 X 15 X 16 X 17 X 18 13. Temp C: 5.0V(4.5V~5.5V) D: 2.65V(2.4V~2.9V) E: 2.3V~3.6V Q: 1.8V(1.7V~1.95V) T: 2.4V~3.0V U: 2.7V~3.6V V: 3.3V(3.0V~3.6V) W: 2.7V~5.5V,3.0V~5.5V 0: NONE 9. Mode O: Normal 1: Dual nCE & Dual Rn/B 4: Quad nCE & Single RnB A: Mask Option 1 10. Generation C: Commercial 0: NONE I: Industrial 14. Bad Block B: Include Bad Block D: Daisychain Sample L: 1~5 Bad Block N: Ini. All Good, Add. 10 Blocks S: All Good Block 0: NONE 15. NAND-Reserved 0: Reserved 16. Packing Type (16 digit) Common to all products, except of Mask ROM Divided into TAPE & REEL(In Mask ROM, divided into M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Y: Partial NAND(2nd) Z: Partial NAND(1st) M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Y: Partial NAND(2nd) Z: Partial NAND(1st) TRAY, AMMO Packing Separately) Type Packing Type Component TAPE & REEL New Marking T Other (Tray, Tube, Jar) 0 (Number) Stack S Component TRAY Y (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M 11. "--" 12. Package A: COB C: CHIP BIZ E: TSOP1(LF,1217) G: FBGA J: FBGA(LF) L: LGA P: TSOP1(LF) R: TSOP2-R T: TSOP2 W: WAFER SEPTEMBER 2006 B: TBGA D: 63-TBGA F: WSOP1(LF) H: TBGA(LF) K: TSOP1(1217) M: tLGA Q: TSOP2(LF) S: SMARTMEDIA V: WSOP Y: TSOP1 BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 13a Section A MEMORY AND STORAGE Asynchronous SRAM LOW-POWER (5V) SRAM Density 8Mbit 4Mbit 1Mbit 256Kbit Part Number K6X8008C2B K6X8016C3B K6X4016C3F K6X4008C1F K6T1008C2E K6X1008C2D K6T0808C1D K6X0808C1D Organization 1Mx8 512x16 256x16 512x8 128x8 128x8 32x8 32x8 Vcc (V) 4.5 - 5.5 4.5 - 5.5 4.5 - 5.5 4.5 - 5.5 4.5 - 5.5 4.5 - 5.5 4.5 - 5.5 4.5 - 5.5 Speed(ns) 55,70 55,70 55,70 55,70 55,70 55,70 55,70 55,70 Operating Temp C,I C,I I,A I,A C,I I,A C,I C,I Operating Current (mA) 50 60 50 40 50 35 60 35 Standby Current (uA) 50 50 20,30 20,30 10 15,25 5 25 Package TSOP2(44) TSOP2(44) TSOP2(44) 32SOP,TSOP 32DIP,32SOP,TSOP1(32) 32SOP,TSOP1(32) 28SOP,TSOP1(28) 28SOP Production Status EOL EOL EOL EOL EOL EOL EOL EOL Speed (ns) 55,70 55,70 70,85 70,85 55,70 70,85 55,70 Operating Temp C,I C,I I,A I,A I I,A I Operating Current (mA) 40 45 30 40 2 25 3 Standby Current (uA) 40 40 20,30 20,30 0.5 10,20 0.5 Package TSOP2(44) TSOP2(44) 32SOP,TSOP2(32) TSOP2(44) 32TSOP1 32SOP,TSOP2(32) 25SOP1 Production Status EOL EOL EOL EOL EOL EOL EOL NOTE: Lead-free available upon request LOW-VOLTAGE & LOW-POWER SRAM Density 8Mbit 4Mbit 1Mbit Part Number K6X8008T2B K6X8016T3B K6X4008T1F K6X4016T3F K6F1008U2C K6X1008T2D K6F1008V2C Organization 1024Kx8 512Kx16 512x8 256x16 128x8 128x8 128x8 Vcc (V) 2.7 - 3.6 2.7 - 3.6 2.7 - 3.6 2.7 - 3.6 2.7 - 3.3 2.7 - 3.6 3.0 - 3.6 MICRO-POWER & LOW-VOLTAGE SRAM Density 16Mbit 8Mbit 4Mbit 2Mbit 1Mbit 14a Part Number K6F1616U6C K6F1616R6C K6F8016R6B K6F8016U6B K6F4008R2G K6F4008U2G K6F4016R4E K6F4016R6G K6F4016U4G K6F4016U6G K6F2016U4E K6F2016R4E K6F2008U2E K6F2008V2E K6F1016U4C Organization 1x16 1x16 512x16 512x16 512Kx8 512Kx8 256Kx16 256Kx16 256Kx16 256Kx16 128x16 128x16 256x8 256x8 64x16 SAMSUNG SEMICONDUCTOR, INC. Vcc (V) 2.7 - 3.3 1.65 - 2.2 1.65 - 2.2 2.7 - 3.3 1.65 - 2.20 2.7 - 3.3 1.65 - 2.20 1.65 - 2.20 2.7 - 3.3 2.7 - 3.3 2.7 - 3.3 1.65 - 2.2 2.7 - 3.3 3.0 - 3.6 2.7 - 3.3 Speed (ns) 55,70 70 70,85 55,70 70,85 45,55,70 70, 85 70,85 55,70 55,70 55,70 70,85 55,70 55,70 55,70 Operating Temp I I I I I I I I I I I I I I I Operating Current (mA) 3 3 3 4 2 2 2 2 2 2 2 2 2 3 2 BR-06-ALL-001 Standby Current (uA) 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Package 48-FBGA 48-FBGA 48-TBGA 48-TBGA 36TBGA 36TBGA 48TBGA 48TBGA 48TBGA 48TBGA 48-TBGA 48-FBGA 32TSOP1 32TSOP1 48-FBGA Production Status EOL, LTB due no later than 12/31/06 EOL, LTB due no later than 12/31/06 EOL EOL EOL, LTB due no later than 12/31/06 EOL, LTB due no later than 12/31/06 EOL, LTB due no later than 12/31/06 EOL, LTB due no later than 12/31/06 EOL, LTB due no later than 12/31/06 EOL, LTB due no later than 12/31/06 EOL EOL EOL EOL EOL SEPTEMBER 2006 Section MEMORY AND STORAGE Asynchronous SRAM A UtRAM (High Density & Low Power) Density 32Mbit 16Mbit Part Number K1S321615M K1S321611C K1S32161CD K1S32161BCD K1S32161CD K1S161615M K1S1616B1M Organization 2Mx16 2Mx16 2Mx16 2Mx16 2Mx16 1Mx16 1Mx16 Vcc (V) 3 3 3 1.8 3 3 1.8 Speed (ns) 100 70 70 70 70 70 70 Operating Temp E I I I E I I Operating Current (mA) 20 35 35 35 35 20 35 Standby Current (uA) 150 100 100 100 100 70 60 Package 48-TBGA 48-FBGA 48-FBGA 48-FBGA 48-TBGA 48-TBGA 48-TBGA Production Status EOL Mass Production Mass Production Mass Production Mass Production EOL EOL HIGH-SPEED (4Mbit) ASYNCHRONOUS FAST SRAM Density 4Mbit 3Mbit 1Mbit Part Number K6R4016C1D K6R4016V1D K6R4004C1D K6R4004V1D K6R4008C1D K6R4008V1D K6R3024V1D K6R1008V1D K6R1008C1D K6R1004V1D K6R1004C1D K6R1016V1D K6R1016C1D Organization 256Kx16 256Kx16 1Mx4 1Mx4 512Kx8 512Kx8 128x24 128x8 128x8 256x4 256x4 64x16 64x16 Vcc (V) 5 3.3 5 3.3 5 3.3 3.3 3.3 5 3.3 5 3.3 5 Speed (ns) 10 10 10, 12 8, 10 10 10 9, 10, 12 8, 10, 12 10, 12, 15 8, 10, 12 10, 12, 15 8, 10, 12 10, 12, 15 Operating Temp I I I I I I C,I C,I C,I C,I C,I C,I C,I Operating Current (mA) 65, 55 80, 65 65, 55 80, 65 65, 55 80, 65 170,150,130 170,150,130 170,150,130 170,150,130 170,150,130 170,150,130 170,150,130 Standby Current (uA) 20, 5 20, 5(1.2) 20, 5 20, 5 20, 5 20, 5 40,15 20,5 20,5 20,5 20,5 20,5 20,5 Package 44SOJ, 44TSOP2, 48TBGA 44SOJ, 44TSOP2, 48TBGA 32 SOJ 32 SOJ 36 SOJ, 44 TSOP2 36 SOJ, 44 TSOP2 119PBGA 32SOJ,32TSOP2 32SOJ,32TSOP2 32SOJ 32SOJ 44SOJ,44TSOP2,48TBGA 44SOJ,44TSOP2,48TBGA Production Status Mass Production Mass Production EOL EOL Mass Production Mass Production EOL EOL EOL EOL EOL EOL EOL NOTE: Ordering Information: http://www.samsung.com/Products/Semiconductor/Support/Label_CodeInfo/Async_SRAM.pdf SEPTEMBER 2006 BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 15a A Section Asynchronous SRAM Ordering Information MEMORY AND STORAGE ASYNCHRONOUS SRAM ORDERING INFORMATION K 1 6 2 X 3 X 4 X 5 1. Memory (K) X 7 X 8 X 9 X 10 11 M: 1st Generation A: 2nd Generation C: 4th Generation E: 6th Generation G: 8th Generation 3. Small Classification E: Corner Vcc/Vss + Fast SRAM F: fCMOS Cell + LPSRAM H: High Speed(LPSRAM) X: High Voltage(LPSRAM) J: BICMOS L: Poly Load Cell + LPSRAM R: Center Vcc/Vss + Fast SRAM T: TFT Cell + LPSRAM B: 3rd Generation D: 5th Generation F: 7th Generation H: 9th Generation 12. Package 08: 256K 16: 16M 32: 32M 64: 64M 09: 512K 20: 2M 40: 4M 80: 8M 04: x4 18: x18 08: x8 24: x24 A: TBGA(LF) C: CHIP BIZ E: TBGA G: SOP J: SOJ L: TSOP1-0813.4F(LF) P: TSOP1-0820F(LF) Q: TSOP2-400R(LF) T: TSOP W: WAFER B: SOP(LF) D: DIP F: FBGA H: BGA K: SOJ(LF) R: TSOP-R U: TSOP2-400(LF) Z: UBGA 6~7. Organization 8. Vcc 5: 1.5V Q: VDD 3.0V/VDDQ 1.8V R: 1.65V~2.2V S: 2.5V T: 2.7V~3.6V V: 3.3V W: 2.2V~3.3V C: 5.0V U: 3.0V * Exception - 1MFSRAM B-ver 32-SOJ-300 > S 28-SOJ-300 > S - 512K/1M/2M/4M LPSRAM 32-TSOP1-0813.4F > Y 32-TSOP1-0813.4 > Y 32-TSOP1-0813.4R > N - 4M LPSRAM 32-TSOP2-400F > V 32-TSOP2-400R > M 9. Mode 1: CS Low Active 2: CS1, CS2 - Dual Chip Select Signal 3: Single Chip Select with /LB,/UB(tOE) 4: Single Chip Select with /LB,/UB(tCS) 5: Dual Chip Select with /LB,/UB(tOE) 6: Dual Chip Select with /LB,/UB(tCS) 7: I/Os Control with /BYTE 8: CDMA Function 9: Multiplexed Address A: Mirror Chip Option 16a SAMSUNG SEMICONDUCTOR, INC. X 13 X 14 X 15 X 16 X 17 X 18 14~15. Speed (tAA) 11. " ----" 4~5. Density 01: x1 16: x16 32: x32 X 12 10. Generation 2. Async SRAM: 6 06: 64K 10: 1M 30: 3M 60: 6M X 6 13. 1st Chip Speed - COMMON (Temp,Power) A: Automotive,Normal B: Commercial,Low Low C: Commercial,Normal D: Extended,Low Low E: Extended,Normal F: Industrial,Low Low I: Industrial,Normal L: Commercial,Low M: Military,Normal N: Extended,Low P: Industrial,Low Q: Automotive,Low R: Industrial,Super Low T: Extended,Super Low U: Commercial,Ultra Super Low 0: NONE,NONE - WAFER, CHIP BIZ Level Division 0: NONE,NONE 1: Hot DC sort 2: Hot DC,selected AC sort 3: Cold/Hot DC,selected AC sort BR-06-ALL-001 - fCMOS Cell + LPSRAM & Poly Load Cell + LPSRAM & TFT Cell + LPSRAM 10: 100ns 12: 120ns 15: 150ns 25: 25ns(only fCMOS Cell) 30: 300ns 35: 35ns(except Poly Load Cell) 45: 45ns(except fCMOS Cell) 55: 55ns 60: 60ns(only fCMOS Cell) 70: 70ns 85: 85ns 90: 90ns(only fCMOS Cell) DS: Daisychain Sample - High Speed (LPSRAM) 20: 20ns 25: 25ns - High Voltage (LPSRAM) 55: 55ns 70: 70ns 85: 85ns - Corner Vcc/Vss + Fast SRAM 10: 10ns 12: 12ns 13: 13ns 15: 15ns 17: 17ns 20: 20ns 25: 25ns 30: 30ns 35: 35ns 45 :45ns - BICMOS & Center Vcc/Vss + Fast SRAM 06: 6ns 08: 8ns 09: 9ns 10: 10ns 12: 12ns 13: 13ns 15: 15ns 17: 17ns 20: 20ns 25: 25ns 30: 30ns(only Center Vcc/Vss + Fast SRAM) 35: 35ns(only Center Vcc/Vss + Fast SRAM) 7A: 7.2ns(only BICMOS) 8A: 8.6ns(only BICMOS) DS: Daisychain Sample - Async SRAM COMMON 00: NONE (Containing Wafer, CHIP BIZ, Exception code) 16. Packing Type (16 digit) - Common to all products, except of Mask ROM - Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type New Marking Component TAPE & REEL T Other (Tray, Tube, Jar) 0 (Number) Stack S Component TRAY Y (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M SEPTEMBER 2006 Section MEMORY AND STORAGE Synchronous SRAM A SPB & FT (36Mbit) SRAM Part Number K7A323600M K7A321800M K7B323625M K7B321825M K7A323630C K7A321830C K7B323635C K7B321835C Organization 1Mx36 2Mx18 1Mx36 2Mx18 1Mx36 2Mx18 1Mx36 2Mx18 Operating Mode SPB SPB SB SB SPB SPB SB SB Vdd (V) 3.3 3.3 3.3 3.3 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Access Time tCD(ns) 2.6, 3.1, 4.0 2.6, 3.1, 4.0 6.5, 7.5 6.5, 7.5 3.1 3.1 7.5 7.5 Speed tCYC (MHz) 250, 200, 138 250, 200, 138 133, 118 133, 118 200 200 118 118 I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Package 100TQFP (L / LF) 100TQFP (L / LF) 100TQFP (L / LF) 100TQFP (L / LF) 100TQFP (LF(Lead Free) only) 100TQFP (Lead Free only) 100TQFP (Lead Free only) 100TQFP (Lead Free only) Production Status EOL in Q107 EOL in Q107 EOL in Q107 EOL in Q107 Q306 (E/S) Q306 (E/S) Q306 (E/S) Q306 (E/S) Comments 2E1D 2E1D 2E1D 2E1D - Access Time tCD(ns) 2.6, 3.5 3.1 2.6, 3.5 3.1 7.5 7.5 Speed tCYC (MHz) 250, 167 200 250, 167 200 117 117 I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Package 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Comments 2E1D 2E2D 2E1D 2E2D - I/O Voltage (V) 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 Package 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Comments 2E1D 2E1D 2E1D 2E1D - Package 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable NOTES: 200MHz could cover 167MHz, 133MHz speed option SPB & FT (18Mbit) SRAM Part Number K7A163630B K7A163631B K7A161830B K7A161831B K7B163635B K7B161835B Organization 512Kx36 512Kx36 1Mx18 1Mx18 512Kx36 1Mx18 Operating Mode SPB SPB SPB SPB SB SB Vdd (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option SPB & FT (8Mbit) SRAM Part Number K7A803600B K7A803609B K7A801800B K7A801809B K7B803625B K7B801825B Organization 256x36 256x36 512x18 512x18 256x36 512x18 Operating Mode SPB SPB SPB SPB SB SB NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable Vdd (V) 3.3 3.3 3.3 3.3 3.3 3.3 Access Time tCD(ns) 3.5,3.8 2.6 3.5,3.8 2.6 6.5,7.5 6.5,7.5 Speed tCYC (MHz) 167,138 250 167,138 250 133,117 133,117 Recommended speed options for SPB are 250MHz and 167MHz Recommended access speed option for SB is 6.5ns SPB & FT (4Mbit) SRAM Part Number K7A403600B K7A401800B K7A403609B K7A401809B K7A403200B K7B403625B K7B401825B Organization 128Kx36 256Kx18 128Kx36 256Kx18 128Kx32 128Kx36 256Kx18 Operating Mode SPB SPB SPB SPB SPB SB SB Vdd (V) 3.3 3.3 3.3 3.3 3.3 3.3 3.3 Access Time tCD(ns) 3.5, 4.0 3.5, 4.0 2.4, 2.8 2.4, 2.8 3.5, 4.0 6.5, 7.5 6.5, 7.5 Speed tCYC (MHz) 167, 138 167, 138 250, 200 250, 200 167, 138 133, 118 133, 118 I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Comments 2E1D 2E1D 2E1D 2E1D 2E1D NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option SEPTEMBER 2006 BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 17a A Section MEMORY AND STORAGE Synchronous SRAM SPB & FT (2Mbit) SRAM Part Number Organization K7A203600B 64Kx36 K7A203200B 64Kx32 Operating Mode SPB SPB Access Time Vdd (V) tCD(ns) 3.3 4 3.3 4 NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable Speed tCYC (MHz) 138 138 I/O Voltage (V) 2.5, 3.3 2.5, 3.3 Package 100 TQFP 100 TQFP Production Status Will be EOL'd in Q107 Will be EOL'd in Q107 Comments 2E1D 2E1D 2E2D = 2-cycle Enable and 2-cycle Disable NtRAM (72Mbit) SRAM Part Number K7N643645M K7N641845M Organization 2Mx36 4Mx18 Operating Mode SPB SPB Vdd (V) 2.5 2.5 Access Time tCD(ns) 2.6, 3.5 2.6, 3.5 Speed tCYC (MHz) 250, 167 250, 167 I/O Voltage (V) 2.5 2.5 Package 100TQFP(LF Only), 165FBGA 100TQFP(LF Only), 165FBGA Production Status Mass Production Mass Production I/O Voltage (V) 2.5 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Package 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP 100TQFP 100TQFP(LF only), 165FBGA 100TQFP(LF only), 165FBGA 100TQFP (LF only) 100TQFP (LF only) Production Status EOL in Q107 EOL in Q107 EOL in Q107 EOL in Q107 EOL in Q107 EOL in Q107 Q306 (E/S) Q306 (E/S) Q306 (E/S) Q306 (E/S) NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option NtRAM (36Mbit) SRAM Part Number K7N323645M K7N321845M K7N323601M K7N321801M K7M323625M K7M321825M K7N32363SC K7N32183SC K7M323635C K7M321835C Organization 1Mx36 2Mx18 1Mx36 2Mx18 1Mx36 2Mx18 1Mx36 2Mx18 1Mx36 2Mx18 Operating Mode SPB SPB SPB SPB FT FT SPB SPB FT FT Vdd (V) 2.5 2.5 3.3 3.3 3.3 3.3 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Access Time tCD(ns) 2.6, 3.2,3.5,4.2 2.6, 3.2,3.5,4.2 2.6, 3.2,3.5,4.2 2.6, 3.2,3.5,4.2 7.5 7.5 2.6, 3.5 2.6, 3.5 7.5 7.5 Speed tCYC (MHz) 250, 200,167, 133 250, 200,167, 133 250, 200,167, 133 250, 200,167, 133 118 118 250, 167 250, 167 118 118 NOTES: Recommended speed options for SPB are 250MHz and 167MHz NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option Recommended access speed option for SB is 7.5ns NtRAM (18Mbit) SRAM Part Number K7N161831B Organization 1Mx18 Operating Mode SPB Vdd (V) 3.3, 2.5 Access Time tCD(ns) 2.6, 3.5 Speed tCYC (MHz) 250, 167 I/O Voltage (V) 3.3, 2.5 K7N163631B 512Kx36 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 K7M161835B K7M163635B 1Mx18 512Kx36 FT(SB) FT(SB) 3.3 3.3 6.5 6.5 133 133 3.3, 2.5 3.3, 2.5 Package 100TQFP(LF only from 2H07), 165FBGA 100TQFP(LF only from 2H07), 165FBGA 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) Production Status Mass Production Mass Production Mass Production Mass Production NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option / 6.5ns could cover 7.5ns speed option 18a SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-001 SEPTEMBER 2006 Section MEMORY AND STORAGE Synchronous SRAM A NtRAM (8Mbit) SRAM Part Number K7N803601B K7N801801B K7N803609B K7N801809B K7N803645B K7N801845B K7N803649B K7N801849B K7M801825B K7M803625B Organization 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 512Kx18 256Kx36 Operating Mode SPB SPB SPB SPB SPB SPB SPB SPB FT FT Vdd (V) 3.3 3.3 3.3 3.3 2.5 2.5 2.5 2.5 3.3 3.3 Access Time tCD(ns) 3.5, 4.2 3.5, 4.2 2.6 2.6 3.5, 4.2 3.5, 4.2 2.6 2.6 6.5,7.5 6.5,7.5 Speed tCYC (MHz) 167,133 167,133 250 250 167,133 167,133 250 250 133,117 133,117 I/O Voltage (V) 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 2.5 2.5 2.5 2.5 3.3, 2.5 3.3, 2.5 Package 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Vdd (V) 3.3 3.3 3.3 3.3 Access Time tCD(ns) 3.5, 4.2 3.5, 4.2 2.6, 3.0 2.6, 3.0 Speed tCYC (MHz) 167,133 167,133 250,200 250,200 I/O Voltage (V) 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 Package 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) 100TQFP (LF only from 2H07) Production Status Mass Production Mass Production Mass Production Mass Production Access Time tCD(ns) 1.7, 2.0 1.7, 2.0 1.6, 2.0 1.6, 2.0 1.6, 2.0 1.6, 2.0 Speed tCYC (MHz) 300,250 300,250 300,250 300,250 300,250 300,250 I/O Voltage (V) 1.5 (Max 1.8) 1.5 (Max 1.8) 1.5 (Max 1.8) 1.5 (Max 1.8) 1.5 (Max 1.8) 1.5 (Max 1.8) Package 119BGA 119BGA 119BGA 119BGA 119BGA 119BGA Production Status EOL in Q207 EOL in Q207 EOL in Q207 EOL in Q207 Q306 (C/S) Q306 (C/S) Access Time tCD(ns) 2 1.6 Speed tCYC (MHz) 250 300,250 I/O Voltage (V) 1.5 (Max 1.9) 1.5 (Max.1.9) Package 119BGA 119BGA Production Status Mass Production Mass Production NtRAM (4Mbit) SRAM Part Number K7N403601B K7N401801B K7N403609B K7N401809B Organization 128Kx36 256Kx18 128Kx36 256Kx18 Operating Mode SPB SPB SPB SPB LATE-WRITE R-R (32Mbit) SRAM Part Number K7P321888M K7P323688M K7P321866M K7P323666M K7P321874C K7P323674C Organization 2Mx18 1Mx36 2Mx18 1Mx36 2Mx18 1Mx36 Operating Mode SP SP SP SP SP SP Vdd (V) 1.8 1.8 2.5 2.5 1.8 / 2.5V 1.8 / 2.5V LATE-WRITE R-R (16Mbit) SRAM Part Number K7P161866A K7P163666A Organization 1Mx18 512Kx36 SEPTEMBER 2006 Operating Mode SP SP Vdd (V) 2.5 2.5 BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 19a A Section MEMORY AND STORAGE Synchronous SRAM LATE-WRITE R-R (8Mbit) SRAM Part Number K7P801811B K7P803611B K7P801866B K7P803666B K7P801822B K7P803622B Organization 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 Operating Mode SP SP SP SP SP SP Vdd (V) 3.3 3.3 2.5 2.5 3.3 3.3 Access Time tCD(ns) 1.5,1.6,2.0 1.5,1.6,2.0 1.5,1.6,2.0 1.5, 1.6, 2.0 1.5, 1.6, 2.0 3.3,2.5,2.0 Speed tCYC (MHz) 333,300,250 333,300,250 333,300.25 333, 300,250 333, 300,250 250,200,166 I/O Voltage (V) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max 2.0) 2.5/3.3 2.5/3.3 Speed tCYC (MHz) 250,200,167 167 250,200,167 I/O Voltage (V) 2.5/3.3 2.5/3.3 2.5/3.3 Package 119BGA 119BGA 119BGA 119BGA 119BGA 119BGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production LATE-WRITE R-R & R-L (4Mbit) SRAM Part Number K7P401822B K7P401823B K7P403622B Organization 256Kx18 256Kx18 128Kx36 Operating Mode SP SP SP Vdd (V) 3.3 3.3 3.3 Access Time tCD(ns) 2.5,2.7,3.0 6.5 2.5,2.7,3.0 Production Status Mass Production Mass Production Mass Production Package 119BGA 119BGA 119BGA DDR (8Mbit) SRAM Part Number K7D803671B K7D801871B Organization 256Kx36 512Kx18 Vdd (V) 2.5 2.5 Access Time tCD (ns) 1.7/1.9/2.1 1.7/1.9/2.1 Cycle Time (MHz) 333, 330, 250 333, 330, 250 I/O Voltage (V) 1.5(Max 2.0) 1.5(Max 2.0) Package 153BGA 153BGA Production Status Mass Production Mass Production Vdd (V) 1.8~2.5 1.8~2.5 Access Time tCD (ns) 2.3 2.3 Cycle Time (MHz) 330, 300 330, 300 I/O Voltage (V) 1.5~1.9 1.5~1.9 Package 153BGA 153BGA Production Status Mass Production Mass Production DDR (16Mbit) SRAM Part Number K7D161874B K7D163674B 20a Organization 1Mx18 512Kx36 SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-001 SEPTEMBER 2006 Section MEMORY AND STORAGE Synchronous SRAM A DDR (32Mbit) SRAM Part Number K7D321874A K7D323674A K7D321874C K7D323674C Organization 2Mx18 1Mx36 2Mx18 1Mx36 Access Time tCD (ns) 2.0 2.0 2.0 2.0 Vdd (V) 1.8~2.5 1.8~2.5 1.8~2.5 1.8~2.5 Cycle Time (MHz) 400, 375, 333 400, 375, 333 400, 375, 333 400, 375, 333 I/O Voltage (V) 1.5~1.8 1.5~1.8 1.5~1.8 1.5~1.8 Production Status EOL in Q406 EOL in Q406 Q306 (C/S) Q306 (C/S) Package 153BGA 153BGA 153BGA 153BGA DDR II CIO/SIO (18Mbit) SRAM Part Number K7I161882B K7I161884B K7J161882B K7J163682B K7I163682B K7I163684B Organization 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36 Access Time tCD (ns) 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 NOTES: 2B = Burst of 2 Cycle Time (MHz) 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 4B = Burst of 4 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA SIO = Separate I/O Comments CIO-2B CIO-4B SIO-2B SIO-2B CIO-2B CIO-4B CIO = Common I/O DDR II CIO/SIO (36Mbit) SRAM Part Number K7I321882M K7I321884M K7J321882M K7I323682M K7I323684M K7J323682M K7I321882C K7I321884C K7J321882C K7I323682C K7I323684C K7J323682C Organization 2Mx18 2Mx18 2Mx18 1Mx36 1Mx36 1Mx36 2Mx18 2Mx18 2Mx18 1Mx36 1Mx36 1Mx36 Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45 0.45 0.45 0.45 0.45 0.45 Cycle Time (MHz) 250,200,167 250,200,167 250,200,167 250,200,167 250,200,167 250,200,167 330,300,250 330,300,250 330,300,250 330,300,250 330,300,250 330,300,250 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 NOTES: 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O C-die will support high-speed bins only 330, 300, 250MHz, which can cover slow-speed bins (200MHz, 167MHz) using stable DLL circuit. SEPTEMBER 2006 BR-06-ALL-001 Production Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Status EOL in Q406 EOL in Q406 EOL in Q406 EOL in Q406 EOL in Q406 EOL in Q406 Q306 (C/S) Q306 (C/S) Q306 (C/S) Q306 (C/S) Q306 (C/S) Q306 (C/S) Comments CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO = Common I/O SAMSUNG SEMICONDUCTOR, INC. 21a A Section Synchronous SRAM MEMORY AND STORAGE DDR II CIO/SIO (72Mbit) SRAM Part Number K7I641882M K7I641884M K7J641882M K7I643682M K7I643684M K7J643682M Organization 4Mx18 4Mx18 4Mx18 2Mx36 2Mx36 2Mx36 Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 NOTES: 2B = Burst of 2 Access Time tCD (ns) 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 Cycle Time (MHz) 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 4B = Burst of 4 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA SIO = Separate I/O Comments CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO = Common I/O DDR II+ CIO/SIO (18Mbit) SRAM Part Number K7K1618T2C K7K1636T2C Organization 1Mx18 512Kx36 Vdd (V) 1.8 1.8 Access Time tCD (ns) 0.45 0.45 Cycle Time (MHz) 400, 333 400, 333 I/O Voltage (V) 1.5 1.5 Production Package 165FBGA 165FBGA Status Q306 (E/S) Q306 (E/S) Comments DDRII + CIO-2B DDRII + CIO-2B I/O Voltage (V) 1.5 1.5 Production Package 165FBGA 165FBGA Status Q306 (E/S) Q306 (E/S) Comments DDRII + CIO-2B DDRII + CIO-2B NOTES:Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand. DDR II+ CIO/SIO (36Mbit) SRAM Part Number K7K3218T2C K7K3236T2C Organization 2Mx18 1Mx36 Vdd (V) 1.8 1.8 Access Time tCD (ns) 0.45 0.45 Cycle Time (MHz) 400, 333 400, 333 NOTES:Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand. QDR I, II (18Mbit) SRAM Part Number K7R160982B K7R161882B K7R161884B K7Q161862B K7Q161864B K7R163682B K7R163684B K7Q163662B K7Q163664B Organization 2Mx9 1Mx18 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36 512Kx36 Vdd (V) 1.8 1.8 1.8 1.8v / 2.5v 1.8v / 2.5v 1.8 1.8 1.8v / 2.5v 1.8v / 2.5v NOTES: 2B = Burst of 2 22a SAMSUNG SEMICONDUCTOR, INC. Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 2.5 2.5 0.45,0.45,0.50 0.45,0.45,0.45,0.50 2.5 2.5 Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 167 167 250,200,167 300,250,200,167 167 167 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Comments QDR II - 2B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B 4B = Burst of 4 BR-06-ALL-001 SEPTEMBER 2006 Section MEMORY AND STORAGE Synchronous SRAM A QDR II (36Mbit) SRAM Part Number K7R320982M K7R321882M K7R321884M K7R323682M K7R323684M K7R320982C K7R321882C K7R321884C K7R323682C K7R323684C Organization 4Mx9 2Mx18 2Mx18 1Mx36 1Mx36 4Mx9 2Mx18 2Mx18 1Mx36 1Mx36 Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 Access Time tCD (ns) 0.45,0.50 0.45,0.50 0.45,0.45,0.50 0.45,0.50 0.45,0.45,0.50 0.45 0.45 0.45 0.45 0.45 Cycle Time (MHz) 200,167 200,167 250,200,167 200,167 250,200,167 300, 250, 200 300, 250, 200 333, 300, 250 300, 250, 200 333, 300, 250 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Production Status EOL in Q406 EOL in Q406 EOL in Q406 EOL in Q406 EOL in Q406 Q306 (C/S) Q306 (C/S) Q306 (C/S) Q306 (C/S) Q306 (C/S) Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B NOTES: 2B = Burst of 2 4B = Burst of 4 C-die will support high-speed bins only 300, 250, 200MHz, which can cover slow-speed bin (167MHz) using stable DLL circuit. QDR II (72Mbit) SRAM Part Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M Organization 8Mx9 4Mx18 4Mx18 2Mx36 2Mx36 Vdd (V) 1.8 1.8 1.8 1.8 1.8 Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Production Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Status Mass Production Mass Production Mass Production Mass Production Mass Production Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B I/O Voltage (V) 1.5 1.5 Production Package 165FBGA 165FBGA Status Q306 (E/S) Q306 (E/S) Comments QDR II + 4B QDR II + 4B I/O Voltage (V) 1.5 1.5 Production Package 165FBGA 165FBGA Status Q306 (E/S) Q306 (E/S) Comments QDR II + 4B QDR II + 4B NOTES: 2B = Burst of 2 4B = Burst of 4 The recommended speed bins are 250MHz, 200MHz for 2B part, 300MHz, 250MHz for 4B part. QDR II+ (18Mbit) SRAM Part Number K7S1618T4C K7S1636T4C Organization 1Mx18 512Kx36 Vdd (V) 1.8 1.8 Access Time tCD (ns) 0.45 0.45 Cycle Time (MHz) 400, 333 400, 333 NOTES: Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand. QDR II+ (36Mbit) SRAM Part Number K7S3218T4C K7S3236T4C Organization 1Mx36 2Mx18 Vdd (V) 1.8 1.8 Access Time tCD (ns) 0.45 0.45 Cycle Time (MHz) 400, 333 400, 333 NOTES:Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand. SEPTEMBER 2006 BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 23a A Section Synchronous SRAM Ordering Information MEMORY AND STORAGE SYNCHRONOUS SRAM ORDERING INFORMATION K 1 7 2 X 3 X 4 X 5 1. Memory (K) 2. Sync SRAM: 7 3. Small Classification A: Sync Pipelined Burst B: Sync Burst C: Custom Product D: Double Data Rate I: Double Data Rate II, Common I/O J: Double Data Rate, Separate I/O K: Double Data II+, Common I/O L: Late Select M: Sync Burst + NtRAM N: Sync Pipelined Burst + NtRAM X 6 X 7 X 8 X 9 X 10 11 X 12 62: 2.5V/1.8V,HSTL,Burst2 64: 2.5V/1.8V,HSTL,Burst4 66: 2.5V,HSTL,R-R 70: 2.5V,HSTL,4-1-1-1 71: 2.5V,HSTL,3-1-1-1 73: 1.5V,1.8V,HSTL,All 74: 1.8V,2.5V,HSTL,All 80: 1.8V,LVCMOS,2E1D 82: 1.8V,HSTL,Burst2 84: 1.8V,HSTL,Burst4 85: 1.8V,LVCMOS,2E2D,Hi SPEED 88: 1.8V,HSTL,R-R 91: 1.5V,HSTL,All 95: 1.0V,HSTL,All T2: 1.8V,2Clock Latency,Burst2 T4: 1.8V,2Clock Latency,Burst4 U2: 1.8V,2.5Clock Latency,Burst2 U4: 1.8V,2.5Clock Latency,Burst4 P: Sync Pipe 10. Generation Q: Quad Data Rate I R: Quad Data Rate II S: Quad Data Rate II+ 4~5. Density 10: 1M 20: 2M 40: 4M 64: 72M 80: 8M 16: 18M 32: 36M 44: 144M 6~7. Organization 08: x8 18: x18 36: x36 72: x72 11. "--" 12. Package 09: x9 32: x32 44: x144 8~9. Vcc, Interface, Mode 00: 3.3V,LVTTL,2E1D WIDE 01: 3.3V,LVTTL,2E2D WIDE 08: 3.3V,LVTTL,2E2D Hi SPEED 09: 3.3V,LVTTL,Hi SPEED 11: 3.3V,HSTL,R-R 12: 3.3V,HSTL,R-L 14: 3.3V,HSTL,R-R Fixed ZQ 22: 3.3V,LVTTL,R-R 23: 3.3V,LVTTL,R-L 25: 3.3V,LVTTL,SB-FT WIDE 30: 1.8/2.5/3.3V,LVTTL,2E1D 31: 1.8/2.5/3.3V,LVTTL,2E2D 35: 1.8/2.5/3.3V,LVTTL,SB-FT 44: 2.5V,LVTTL,2E1D 45: 2.5V,LVTTL,2E2D 49: 2.5V,LVTTL,Hi SPEED 52: 2.5V,1.5/1.8V,HSTL,Burst2 54: 2.5V,1.5/1.8V,HSTL,Burst4 24a M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Z: TEMPORARY CODE SAMSUNG SEMICONDUCTOR, INC. H: BGA,FCBGA,PBGA G: BGA, FCBGA, FBGA (LF) F: FBGA E: FBGA (LF) Q: (L)QPF P: (L)QFP(LF) C: CHIP BIZ W: WAFER 13. Temp, Power X 13 X 14 - WAFER, CHIP BIZ Level Division 0: NONE,NONE X 16 X 17 X 18 14~15. Speed - Sync Burst,Sync Burst + NtRAM & < Mode is R-L >(Clock Accesss Time) 10: 10ns(Sync Burst, Sync Burst + NtRAM) 38: 3.8ns 43: 4.3ns 48: 4.8ns 50: 5ns(Only Sync Pipe) 55: 5.5ns 60: 6ns 65: 6.5ns 67: 6.7ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns 90: 9ns - Other Small Classification (Clock Cycle Time) 10: 100MHz 11: 117MHz 13: 133MHz 14: 138MHz 15: 150MHz 16: 166MHz 17: 175MHz 18: 183MHz 19: 143MHz 20: 200MHz 21: 200MHz(2.0ns) 22: 225MHz 25: 250MHz 26: 250MHz(1.75ns) 27: 275MHz 30: 300MHz 33: 333MHz 35: 350MHz 36: 366MHz(t-CYCLE) 37: 375MHz 40: 400MHz(t-CYCLE) 42: 425MHz 45: 450MHz 50: 500MHz(except Sync Pipe) 6A: 600MHz 6F: 650Mhz(Only CSRAM) 7F: 750MHz 16. Packing Type (16 digit) - Common to all products, except of Mask ROM - Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type - COMMON (Temp,Power) 0: NONE,NONE (Containing of Error handling code) A: Automotive,Normal B: Commercial,Low Low C: Commercial,Normal E: Extended,Normal I: Industrial,Normal X 15 Packing Type New Marking Component TAPE & REEL T Other (Tray, Tube, Jar) 0 (Number) Stack S Component TRAY Y (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M 1: Hot DC sort 2: Hot DC, selected AC sort BR-06-ALL-001 SEPTEMBER 2006 Section MEMORY AND STORAGE MCPs A MCP: NAND/DRAM DENSITY FLASH DRAM Memory Combination 256Mb 128Mb ND256128 256Mb 256Mb ND256256 256Mb 512Mb ND256512 256Mb 1Gb NDD256512512 128Mb ND256128 256Mb ND256256 512Mb 256Mb ND512256 512Mb 512Mb NDD512256256 ND512512 1Gb 1Gb 256Mb NND512512256 512Mb NNDD512512256256 NND512512512 NDD1G256256 ND1G512 1Gb 2Gb 1Gb ND1G512512 512Mb NNDD1G1G256256 NND1G1G512 2Gb 1Gb NNDD1G1G512512 FLASH VCC (V) DRAM 1.8V 1.8V 2.65V 3.0V 3.3V 3.0V 1.8V 1.8V 2.65V 1.8V 2.65V 1.8V 2.65V 2.65V 2.65V 1.8V 1.8V 2.65V 2.65V 1.8V 3.0V 2.65V 1.8V 1.8V 2.65V 1.8V 1.8V(L) 3.0V 2.65V 2.65V 1.8V 1.8V(L) 1.8V(L) 1.8V(L) 2.65V(L) 3.3V(L) 1.8V(L) 1.8V(L) 2.65V 2.65V 1.8V(L) 2.65V 2.65V 1.8V 2.65V 2.65V(L) 1.8V 1.8V 1.8V 2.5V 3.3V 2.5V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 3.0V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 2.65V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 3.0V 1.8V 2.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 3.0V ORGANIZATION FLASH DRAM Part No. Size x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 K5D5629ACC-D0900000 K5D5657ACB-D0900000 K5D5657DCB-D090000 K5D5613HCA-D090000 K5D5613VCM-D090000 KAL005005M-DGYY000 K5D5629ACC-D090000 K5D5657ACB-D090000 K5D5657DCB-D090000 K5D1257ACB-D090000 K5D1257DCA-D090000 K5D1258ACM-D090000 K5D1258DCM-D090000 KAL003004M-DG55000 K5D1212DCA-D090000 K5D1213ACM-D090000 K5E1212ACB-D075000 KAG00K007A-DGG5000 KBE00F003A-D411000 KBE00G003M-D429000 KBE00J006A-D411000 KBE00F005A-D411000 KBE00G005A-D411000 KAG004003M-DDD5000 KAG00K003M-DGG5000 KAG00400SM-DDDY000 KAL00T00KM-DG55000 KAL00Z00LM-DA55000 K5D1G12DCM-D090000 K5D1G13DCM-D090000 K5D1G13ACD-D075000 K5D1G12ACM-D090000 K5E1G13ACM-D075000 KAL00X00VM-D1YY000 KBE00S005M-D411000 KBE00U006M-D411000 KBE00H005M-D411000 KBE00H00BM-D413000 KAG006003M-DGG5000 KAG006003M-DGG5000 KAG001002M-DGGY000 KAG006003A-D115000 KAG00600SA-D115000 KBE00500AM-D437000 KBE00S00AA-D435000 KBE00100GM-431000 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.2 10.5x13x1.2 10.5X13X1.4 10.5x13x1.2 10.5x13x1.2 10.5x13x1.2 10.5x13x1.2 10.5x13x1.4 11.5x13x1.2 10.5x13x1.4 10.5x13x1.4 10.5x13x1.2 10.5x13x1.2 11.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 11.5x13x1.2 11.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.2 12.0x14x1.4 11.5x13x1.2 10.5x13x1.4 12x14x1.4 12x14x1.4 11.5x13x1.4 11.5x13x1.4 12.0x14x1.4 12.0x14x1.4 11.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 11.5x13x1.4 x16 x16 x16 x32 x32 x16 x16 x16 x16 x16 x16 x32 x32 x32 x16 x32 x16(D) x16 x16 x16 x16 x32 x32 x16 x16 x32 x32 x32 x16 x32 x32 x16 x32 x16 x32 x16 x32 x32 x16 x32 x32(D) x16 x32 x32 x32 x32 PACKAGE INFORMATION Type 107FBGA 107FBGA 107FBGA 137FBGA 137FBGA 137FBGA 107FBGA 107FBGA 107FBGA 107FBGA 107FBGA 137FBGA 137FBGA 137FBGA 107FBGA 137FBGA 202FBGA 107FBGA 107FBGA 107FBGA 107FBGA 137FBGA 137FBGA 107FBGA 107FBGA 137FBGA 137FBGA 137FBGA 107FBGA 137FBGA 137FBGA 107FBGA 137FBGA 137FBGA 137FBGA 107FBGA 137FBGA 137FBGA 107FBGA 137FBGA 137FBGA 107FBGA 137FBGA 137FBGA 137FBGA 137FBGA NOTES: 1. N = NAND, D= DRAM memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. NDD256256256 = 256Mb NAND + 256Mb DRAM + 256Mb DRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5D5629ACC-D090T00) 3. (D) Denotes DDR SDRAM packaged in MCP 4. (L) Denotes Large Block NAND packaged in MCP SEPTEMBER 2006 BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 25a A Section MEMORY AND STORAGE MCPs MCP: NOR/SRAM AND NOR/UtRAM DENSITY FLASH SRAM Memory Combination FLASH VCC (V) SRAM FLASH SRAM BOOT ORGANIZATION NOR OPR. Part No. PACKAGE INFORMATION Size Type 32Mb 4Mb 8Mb RS3204 RS3208 32Mb 8Mb RS3208 64Mb 32Mb RU6432 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 1.8V 3.0V 1.8V 3.0V 2.6/1.8V x8/x16 x8/x16 x8/x16 x8/x16 x8/x16 x16 x16 x16 x16 x16 x16 x16 x16 BOTTOM TOP BOTTOM TOP BOTTOM TOP BOTTOM TOP/BOT TOP TOP/BOT TOP TOP/BOT TOP/BOT Async. No Page Async. No Page Async. No Page Async. No Page Async. No Page Async. No Page Async. No Page Async. Page Mode Sync Mux Async Page Mode Sync Async Page Mode Async Page Mode 8x11x1.2 8x11x1.2 8x11x1.2 8x11x1.2 8x11x1.2 8x11.6x1.4 8x11.6x1.4 8x11.6x1.2 8.0x9.2x1.2 8x11.6x1.2 8x12x1.4 8x11.6x1.2 8x11.6x1.2 128Mb 32Mb RU12832 128Mb 64Mb RU12864 256Mb 64Mb RU25664 256Mb 128Mb RU256128 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 1.8V 3.0V 1.8V 3.0V 1.8V x8/x16 x8/x16 x8/x16 x8/x16 x8/x16 x16 x16 x16 x16 x16 x16 x16 x16 K5A3240CBM-F755000 K5A3281CTM-D755000 K5A3281CBM-D755000 K5A3281CTM-D755000 K5A3281CBM-D755000 K5J6332CTM-D770000 K5J6332CBM-D770000 K5L2931CAM-D770000 K5N2828ATM-SS66000 K5L2963CAM-D770000 K5L2864ATM-DF66000 K5L5563CAM-D770000 K5L5527CAM-D770000 69FBGA 69FBGA 69FBGA 69FBGA 69FBGA 69FBGA 69FBGA 64FBGA 56FBGA 64FBGA 115FBGA 84FBGA 84FBGA NOTES: 1. R= NOR, S= SRAM, U= UtRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. RRU646432 = 64Mb NOR + 64Mb NOR + 32Mb UtRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5D5629ACC-D090T00) 3. All NOR Flash have demuxed Add/Data lines unless otherwise indicated in NOR OPR column. 4. All packages are pin compatible to Spansion's MCP pin out. MCP: OneNANDTM/DRAM DENSITY FLASH DRAM Memory Combination 256Mb 256Mb OD1256256 512Mb 512Mb OD512512 1Gb 512Mb OD1G512 3Gb 512Mb OOOD1G1G1G512 FLASH 3.3V 3.3V 1.8V 1.8V 1.8V 1.8V 1.8V VCC (V) DRAM 3.3V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V ORGANIZATION FLASH DRAM Part No. Size x16 x16 x16 x16 x16 x16 x16 K5R5658VCM-DR75000 K5R5658LCM-DR75000 K5W1212ACM-DK75000 K5R1213ACA-DK75000 K5R1G12ACM-DK90000 K5R1G13ACA-DK75000 KBR00Y00EA-D434000 8x13x1.4 8x13x1.4 11.5x13x1.4 11.5x13x1.0 11.5x13x1.4 11.5x13x1.0 11.5x13x1.4 x32 x32 x16(D) x32 x16 x32 x32 PACKAGE INFORMATION Type 188FBGA 188FBGA 167FBGA 202FBGA 167FBGA 202FBGA 167FBGA NOTES: 1. O= OneNAND, D= DRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. OD1G512 = 1Gb OneNAND + 512Mb SDRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5R5658VCM-DR75T00) 3. (D) Denotes DDR SDRAM packaged in MCP. 4. All OneNAND Flash have demuxed Add/Data lines. MCP: NOR/DRAM DENSITY FLASH SRAM Memory Combination FLASH VCC (V) SRAM FLASH SRAM BOOT ORGANIZATION NOR OPR. Part No. PACKAGE INFORMATION Size Type 64Mb 64Mb 512Mb 512Mb RD64256 3.0V RD64512 3.0V RRD512256 1.8V RRD256256512 1.8V 2.6V 1.8V 1.8V 1.8V x32 x32(D) x16(D) x16 TOP TOP TOP T+B Async. No Page Async. No Page Sync MLC Sync 10x11x0.8 10.5x12x1.4 11x10x1.3 11.5x13x1.4 256Mb 512Mb 256Mb 512Mb x16 x16 x16 x16 K5H6358ETA-D775000 K5Y6313LTM-D790000 KAS35000AM-S44Y000 KAS280003M-DUU5000 145FBGA 151FBGA 133FBGA 167FBGA NOTES: 1. R= NOR, D= DRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. RDD32128128 = 32Mb NOR + 128Mb DRAM + 128Mb DRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5H6358ETA-D775T00) 3. All NOR Flash have demuxed Add/Data lines. 26a SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-001 SEPTEMBER 2006 Section MEMORY AND STORAGE Hard Disk Drives A 3.5" HARD DISK DRIVES (HDD) SpinPoint V Series SpinPoint P Series SpinPoint T Series Capacity 120GB 160GB V120 CE Series 250GB P40 Series PATA/2MB 40GB 40GB SATA 1.5Gb/s 40GB P80 Series PATA/2MB 80GB 80GB 120GB 160GB 160GB PATA/8MB 80GB 80GB 120GB 160GB 160GB SATA 1.5Gb/s 80GB 120GB 160GB P80 SD Series SATA 3.0Gb/s 40GB 80GB 120GB 160GB P120 Series PATA/8MB 200GB 250GB SATA 3.0Gb/s 200GB 250GB T133 Series PATA/8MB 300GB 400GB SATA 3.0Gb/s 300GB 400GB V80 Series PATA/2MB RPMs 5400 rpm 5400 rpm 5400 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm Model SV1203N SV1604N HA250JC SP0411N SP0401N SP0411C SP0802N SP0822N SP1203N SP1604N SP1624N SP0812N SP0842N SP1213N SP1614N SP1644N SP0812C SP1213C SP1614C HD040GJ HD080HJ HD120IJ HD160JJ SP2014N SP2514N SP2004C SP2504C HD300LD HD400LD HD300LJ HD400LJ # of Heads 3 4 4 1 1 1 2 2 3 4 4 2 2 3 4 4 2 3 4 1 2 3 4 4 4 4 4 6 6 6 6 # of Disks 2 2 2 1 1 1 1 1 2 2 2 1 1 2 2 2 1 2 2 1 1 2 2 2 2 2 2 3 3 3 3 Interface ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 S-ATA 1.5G ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 S-ATA 1.5G S-ATA 1.5G S-ATA 1.5G S-ATA 3G S-ATA 3G S-ATA 3G S-ATA 3G ATA-133 ATA-133 S-ATA 3G S-ATA 3G ATA-133 ATA-133 S-ATA 3G S-ATA 3G Buffer Size 2MB 2MB 2MB 2MB 2MB 2MB 2MB 2MB 2MB 2MB 2MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB Seek Time 8.9ms 8.9ms 8.9ms 10ms 10ms 10ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms MTBF 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 500K hrs 600K hrs 600K hrs 600K hrs 600K hrs 600K hrs 600K hrs RPMs 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm 5400 rpm Model MP0402H MP0603H MP0804H HM040HI HM060II HM080JI HM040HC HM060HC HM080IC HM100JC HM120JC HM041HI HM060HI HM080II HM100JI HM120JI # of Heads 2 3 4 2 3 4 2 2 3 4 4 2 2 3 4 4 # of Disks 1 2 2 1 2 2 1 1 2 2 2 1 1 2 2 2 Interface ATA-6 ATA-6 ATA-6 S-ATA S-ATA S-ATA ATA-6 ATA-6 ATA-6 ATA-6 ATA-6 S-ATA S-ATA S-ATA S-ATA S-ATA Buffer Size 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB 8MB Seek Time 12ms 12ms 12ms 12ms 12ms 12ms 12ms 12ms 12ms 12ms 12ms 12ms 12ms 12ms 12ms 12ms MTBF 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 330K hrs 2.5" HARD DISK DRIVES (HDD) SpinPoint M Series SEPTEMBER 2006 Capacity 40GB 60GB 80GB M40S Series SATA 1.5Gb/s 40GB 60GB 80GB M60 Series 40GB 60GB 80GB 100GB 120GB SATA 1.5Gb/s (3.0Gb/s) 40GB 60GB 80GB 100GB 120GB M40 Series BR-06-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 27a A Section MEMORY AND STORAGE Optical Storage SN-M242D Basic Specs Seek Time (Average) Drive Speed Supported Disc Media Capacity Horizontal/vertical drive mounting Solenoid tray loading Dimensions (WxHxD in mm): Interface: P-ATA 2MB buffer memory ROM/R/RW:120ms DVD-Single:130ms DVD-Dual:140ms DVD-DL(R):140ms DVDR/RW:140ms Read Speed CD-ROM Max. 24X (3,600KB/sec) CD-RW Max. 24X (3,600KB/sec) DVD-Single Max. 8X (10,800KB/sec) DVD-Dual Max. 6 (10,800KB/sec) CD CD-DA; CD-ROM; CD-ROM XA; CD-I; CD-Extra/CD-Plus; Video-CD; CD-R; CD-RW & HSRW; Super Audio CD; US & US+ RW CD Write Speed CD-R Max. 24X (3,600KB/sec) CD-RW Max. 10X (1,500KB/sec) US-RW Max. 24X (3,600KB/sec) US+ CD-RW Max. 24X (3,600KB/sec) DVD DVD-ROM; DVD-Dual; DVDVideo; DVD-R; DVD+R; DVD+RW; DVD-RW DVD 650 MB CD-ROM (read only) 80mm CD (horizontal mount only) 800/700/650/ CD-Recordable (read & write) 700/650MB CD-Rewritable (read & write) 700/650MB High-Speed CD-Rewritable (read & write) 700/650MB Ultra & Ultra+ Speed CD-Rewritable (read & write) 5/9/10/18 G DVD-Single/Dual (PTP, OTP) (read only) 3.9/4.7 G DVD-R (read only) 4.7G DVD+R (read only) DVDRW (read only) 80mm DVD SN-S082D Basic Specs Seek Time (Average) Drive Speed Supported Disc Media Capacity Horizontal/vertical drive mounting Solenoid tray loading Dimensions (WxHxD in mm): 128 x 12.7 x 127 Interface: P-ATA 2MB buffer memory CD-ROM:130ms NS CD-RW:130ms HS/US CD-RW:130ms DVD-Single:130ms DVD-Dual:150ms DVD-R/+R:150ms DVD-RW/+RW:150ms Read Speed CD CD-DA; CD-ROM; CD-ROM XA; CD-I/FMV; CD-Extra/CDPlus; Video-CD; CD-R; CDRW & HSRW; US & US + RW; Super Audio CD CD 650MB CD-ROM (read only) 120mm/80mm CD 800/700/650MB CD-Recordable (read & write) 700/650MB CD-Rewritable (read & write) 700/650MB High-Speed CD-Rewritable (read & write) 700/650MB Ultra & Ultra+ Speed CD-Rewritable (read & write) DVD DVD-ROM; DVD-Video; DVD-R; DVD+R; DVDRW; DVD+R DL; DVD-R DL; support DVD-R/RW CPRM (read/write); DVD-RAM (read only) DVD 5/9/10/18 G DVD-Single/Dual (PTP, OTP) (read only) 3.9/4.7 G DVD-R (read only) 4.7G DVD+R (read only) DVDRW (read only) 80mm DVD Write Speed 28a SAMSUNG SEMICONDUCTOR, INC. CD-ROM Max. 24X (3,600KB/sec) CD-R Max. 24X (3,600KB/sec) NS CD-RW Max. 24x HS/US CD-RW Max.24x DVD-Single Max. 8x DVD-Double Max. 6x DVD-R/+R Max. 8x DVD-RW/+RW Max. 6x DVD-RAM 5x CD-R Max. 24X (3,600KB/sec) NS CD-RW 4X (600KB/sec) HS CD-RW Max. 10X (1,500KB/sec) US/US+ RW Max. 24X DVD+R Max. 8X DVD+RW Max. 8X (8x media) Max. 4x (4x media) DVD+R DL Max. 6x DVD-R Max. 8X DVD-R DL Max, 6x DVD-RW Max 6X (6x media), Max. 4x (4x media) BR-06-ALL-001 SEPTEMBER 2006 Section MEMORY AND STORAGE Optical Storage A SH-S182D Basic Specs Seek Time (Average) Drive Speed Horizontal/vertical drive mounting Solenoid tray loading Dimensions (WxHxD in mm): 148.2 x 42 x 170 Interface: P-ATA 2MB buffer memory CD-ROM/R/RW:110ms DVD-Single:130ms DVD-Dual:140ms DVDR/RW:140ms Read Speed Write Speed Supported Disc DVD-ROM Max.16X (21,600KB/sec) CD DVD-RAM Max.12X (16200KB/sec) DVD-Dual DVD RW Max. 8X (10,800KB/sec) DVDR Max. 12X (16,200KB/sec) DVDR DL Max. 8X (10,800KB/sec) CD-ROM Max. 48X (7,200 KB/sec) CD-R/CD-RW Max. 40X (6,000 KB/sec) DVD-RAM Max. 12X (16,200 KB/sec) DVD DVD+R Max. 18X (24,300KB/sec) DVD-R Max.18X (24,300KB/sec) DVDRW Max. 8X (10,800KB/sec), 6X (8,100KB/sec) DVDR Double L Max. 8X (10,800/sec) CD-R Max. 48X (7,200KB/sec) HS-RW Max. 10X (1,500KB/sec) US-RW Max. 32X (4,800KB/sec) Media Capacity CD-DA; CD-ROM; CD-ROM XA; CD-I; CD-Extra/CD-Plus; Video-CD; CD-R; CD-RW CD 120mm CD-ROM (read only) 80mm CD (horizontal mount only) 800/700/650MB CD-Recordable (read & write) 700/650MB Low/High/Ultra-Speed CD Rewritable (read & write) DVD-ROM; DVD-Video; DVD-R; DVD+R; DVD_R DL; DVDRW; DVD-RAM DVD 5/9/10/18G DVD-Single/Dual (PTP, OTP) (read only) 3.9/4.7G DVD-ROM (read only) DVDRW, DVDR, DVDR DL (read & write) 80mm DVD (horizontal mount only) SH-S182M Basic Specs Seek Time (Average) Drive Speed Horizontal/vertical drive mounting Solenoid tray loading Dimensions (WxHxD in mm): 148.2 x 42 x 170 Interface: P-ATA (Light Scribe) 2MB buffer memory CD-ROM/R/RW:110ms DVD-Single:130ms DVD-Dual:140ms DVDR/RW:140ms Read Speed Write Speed SEPTEMBER 2006 Supported Disc DVD-ROM Max.16X (21,600KB/sec) CD DVD-RAM Max.12X (16200KB/sec) DVD-Dual DVD RW Max. 8X (10,800KB/sec) DVDR Max. 12X (16,200KB/sec) DVDR DL Max. 8X (10,800KB/sec) CD-ROM Max. 48X (7,200 KB/sec) CD-R/CD-RW Max. 40X (6,000 KB/sec) DVD-RAM Max. 12X (16,200 KB/sec) DVD DVD+R Max. 18X (24,300KB/sec) DVD-R Max.18X (24,300KB/sec) DVDRW Max. 8X (10,800KB/sec), 6X (8,100KB/sec) DVDR Double L Max. 8X (10,800/sec) CD-R Max. 48X (7,200KB/sec) HS-RW Max. 10X (1,500KB/sec) US-RW Max. 32X (4,800KB/sec) BR-06-ALL-001 Media Capacity CD-DA; CD-ROM; CD-ROM XA; CD-I; CD-Extra/CD-Plus; Video-CD; CD-R; CD-RW CD 120mm CD-ROM (read only) 80mm CD (horizontal mount only) 800/700/650MB CD-Recordable (read & write) 700/650MB Low/High/Ultra-Speed CD Rewritable (read & write) DVD-ROM; DVD-Video; DVD-R; DVD+R; DVD_R DL; DVDRW; DVD-RAM DVD 5/9/10/18G DVD-Single/Dual (PTP, OTP) (read only) 3.9/4.7G DVD-ROM (read only) DVDRW, DVDR, DVDR DL (read & write) 80mm DVD (horizontal mount only) SAMSUNG SEMICONDUCTOR, INC. 29a SYSTEM LSI SECTION B PAGE ASICs 3b - 5b ASIC ORDERING INFORMATION LCD DRIVER ICs LCD DRIVER IC ORDERING INFORMATION 6b 7b - 8b 9b MOBILE APPLICATION PROCESSORS 10b CMOS IMAGE SENSORS 10b MICROCONTROLLERS 11b-14b MICROCONTROLLER ORDERING INFORMATION 15b SERIAL EPROMS 16b B Section SYSTEM LSI ASIC ASIC FOUNDRY TECHNOLOGY LIBRARY Technology G/HS/LP/RF/MS G/HS/LP/RF Logic (Embedded DRAM) MDL (Embedded Flash) MFL (Embedded Flash) BiCMOS RF (SiGe BiCMOS) L09 L06 L13 LD13 LD18 LFS13 LF18 LF13 BH3515 BH3505 BH1805 BH1305 BS3550 BS1850 BS13200 Process 90nm 65nm (Common Platform) 0.13um 0.13um 0.18um 0.13um 0.18um 0.13um 0.35um 0.35um 0.18um 0.13um 0.35um 0.18um 0.13um Core Voltage 1.0~1.2V 1.0~1.2V 1.2~1.5V 1.0~1.5V 1.8V 1.0~1.5V 1.8V 1.0~1.5V 15V 5V 1.8V 1.2V~1.5V 3.3V 1.8V 1.2V~1.5V I/O Voltage 1.8~3.3V 1.8V~2.5V 2.5~3.3V 2.5~3.3V 3.3V/5V 2.5~3.3V 3.3V/5V 2.5~3.3V 3.3V/5V 3.3V/5V 3.3V/5V 2.5/3.3V 3.3V/5V 2.5~3.3V 2.5~3.3V Cell Size SRAM : 0.79~1.25 um2 SRAM : 0.499~0.676 um2 SRAM : 1.85~2.43 um2 DRAM : 0.34 um2 DRAM : 0.45 um2 Flash : <0.28 um2 Flash : 0.63 um2 Flash : 0.45 um2 fT : 50GHz fT : 120GHz fT : 200GHz ASIC TECHNOLOGY LIBRARY Technology Library Name Name(s) LF13 MFL150 LD13 MDL150 L13 STDH150 STDH150HD STD150 STD150HS STD150HVT STD150OD STD150HVTOD STDL150 LF18 LD18 L18 MFL130 MDL130 STD130 STD131 STDL130 STDL131 L25 LF35 L35H L35 STD110 STDM110 STD111 MFL90 STDH90 STD90 SEPTEMBER 2006 Core Voltage Description (Nominal) (V) 0.13m Merged Flash Memory with Logic 1.2 0.13m Merged DRAM with Logic 1.2 0.13m High-Speed Standard Cell with L13HS 1.2 0.13um High-Density Standard Cell with L13HS 1.2 0.13m High-Density Standard Cell with L13G 1.2 0.13um High-Speed Standard Cell with L13G 1.2 "0.13um Low-Leakage and High-Density Standard Cell with L13G High-VTH option" 1.2 "0.13um High-Speed Standard Cell with L13G Over-Drive option" 1.5 "0.13um Low-Leakage and High-Density Standard Cell with L13G High-VTH and Over-Drive option" 1.5 "0.13m Low Leakage and High-Density Standard Cell with L13LP" 1.5 0.18m Merged Flash Memory with Logic 1.8 0.18m Merged DRAM with Logic 1.8 0.18m High-Density Standard Cell with L18 1.8 0.18m High-Speed Standard Cell with L18 1.8 "0.18m Low Leakage and High-Density Standard Cell with L18LP" 1.8 "0.18um Low Leakage and High Performance Standard Cell with L18LP" 1.8 0.25m High-Density Standard Cell 2.5 0.25m Low Voltage High-Density Standard Cell 1.8 0.25m High Performance Standard Cell 2.5 0.35m Merged Flash Memory with Logic 3.3 0.35m High-Density Standard Cell with dual gate oxide 3.3 0.35m High-Density Standard Cell 3.3 BR-06-ALL-002 Core Voltage Tolerance (V) -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 I/O Receive Voltage (V) 2.5/3.3/5.0T 2.5/3.3/5.0T 2.5/3.3/5.0T 2.5/3.3/5.0T 2.5/3.3/5.0T 2.5/3.3/5.0T I/O Drive Voltage (V) 2.5/3.3 2.5/3.3 2.5/3.3 2.5/3.3 2.5/3.3 2.5/3.3 Maximum Vgs (V) 3.3 3.3 3.3 3.3 3.3 3.3 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3 -0.1 -0.15 -0.15 -0.15 -0.15 1.5/2.5/3.3/5.0T 1.8/2.5/3.3/5.0T 1.8/2.5/3.3/5.0T 1.8/2.5/3.3/5.0T 1.8/2.5/3.3/5.0T 1.5/2.5/3.3 1.8/2.5/3.3 1.8/2.5/3.3 1.8/2.5/3.3 1.8/2.5/3.3 3.3 3.3 3.3 3.3 3.3 -0.15 1.8/2.5/3.3/5.0T 1.8/2.5/3.3 3.3 -0.15 -0.2 -0.15 -0.2 -0.3 -0.3 -0.3 1.8/2.5/3.3/5.0T 2.5/3.3/5.0 2.5/3.3/5.0 2.5/3.3/5.0 3.3/5.0 3.3/5.0 3.3/5.0 1.8/2.5/3.3 2.5/3.3 2.5/3.3 2.5/3.3 3.3 3.3/5.0 3.3 3.3 3.3 3.3 3.3 3.3 5 3.3 SAMSUNG SEMICONDUCTOR, INC. 3b B Section SYSTEM LSI ASIC ASIC CORE LIBRARY I/O LIBRARY I/O I/O-IP 0.35m STD90 /STDM90 A A A NA A NA A NA AR A G A G A A A AR AR D A CMOS, TTL I/O Buffers 3/5V tolerant Slew control PVT impedance control True 5V I/O AGP4X ATA5 ATA6 CardBus/PCI GTL HSTL IEEE1284 LVDS OSC (KHz) OSC (MHz) PCI PECL SSTL Ultra2- SCSI (LVD) USB1.1 0.25m STD110 A A A G NA NA A NA AR AR G NA AR A A A AR A NA A 0.18m STD130 A A A G NA NA AR AR AR AR AR NA AR A A AR AR AR NA A STD150HS A A A G NA NA AR G AR G G NA AR A A AR G AR NA A ----0.13m--STD150G A A A G NA NA AR AR AR G G NA AR A A AR G AR NA A STD150LP A A A G NA NA AR AR AR G G NA AR A A AR G AR NA A NOTES: * I/O review sheet (I/O interface for I/O-IP review sheet in NCTS (New Cell Traveler Sheet) 1 A = Available 6 E = Under development (design and layout will be finished by the date) 2 AR = Available upon Request 7 F = Scheduled (design and layout will be finished by the date) 3 B = Under test (test will be finished by the date) 8 G = Will be developed based upon customer's request (SEC has more than 90% confidence for silicon result) 4 C = In fabrication line (fab. out date) 9 TBD = To Be Determined 5 D = GDS is available but silicon has not been verified 10 NA = Not Available (SEC has more than 90% confidence in silicon result) * For further information, please contact: jhprk@samsung.co.kr ASIC LEGACY FOUNDRY Product CMOS Legacy Hi Voltage CMOS EEPROM CIS Technology 2.0m ~ 0.5m 0.8m ~ 0.13m 0.8m ~ 0.35m 0.8m ~ 0.5m Feature S/D Poly, D/TLM S/D Poly, D/TLM D Poly, D/TLM S/D Poly, D/TLM Production Foundry Foundry Foundry Foundry Comments 5V with Mixed Signal (Optional) 12, 13V, 15V, 20V, 30V, 45V B&W, RGB, Full Color ASIC DIGITAL CORES DSP Cores CPU Cores Interface Cores BUS Architecture * SSP1820 (OAK Compatible 16-Bit DSP Core) * TeakLite (TeakLite Compatible 16-Bit DSP Core) * Teak (Teak Compatible 16-Bit DSP Core) * SAM17(8)X (ARM7TDMI Compatible RISC Processor) * SAM40X (ARM9TDMI Compatible RISC Processor) * SAM42X (ARM920T Compatible RISC Processor) * SAM44X (ARM940T Compatible RISC Processor) USB1.1 Function Controller USB2.0 Function Controller USB1.1 Host Controller USB FS OTG Controller USB2.0 Phy (L18) USB2.0 Phy (L13) IEEE1394a Link IEE1394a DV Link IEEE1394a Phy (L18) PCI Bridge PCI Device PCI2AHB Ethernet MAC (10/100) * AMBA2.0 (Micro Pack v2.0) * AMBA3.0 (ADK) * ARM920T (ARM920T Compatible RISC Processor) * ARM940T (ARM940T Compatible RISC Processor) * ARM926EJS (ARM926EJ-S Compatible RISC Processor) * ARM1020E (ARM1020E Compatible RISC Processor) * ETM9 (Embedded Trace Macrocell for ARM9 core) * ETM7 (Embedded Trace Macrocell for ARM7 core) * ARM946E-S (ARM946E-S Compatible RISC Processor) * ARM7TDMI-S (ARM7TDMI-S Compatible RISC Processor) * ARM1136JF-S (ARM1136JF-S Compatible RISC Processor) 4b SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-002 SEPTEMBER 2006 B Section SYSTEM LSI ASIC ASIC MIXED-SIGNAL IPs High Resolution & Performance for Mixed-Signal Cores (based on proven silicon) Low-Voltage Mixed-Signal Cores for SoC Full Customer Support Specific Cores * ADC: 1.8V 8-bit 250MHz ADC * ADC: 1.2V 8-bit 30MHz ADC * Support for various kinds of MSC architectures 1.8V 10-bit 150MHz ADC 1.2V 10-bit 100MHz ADC 3.3V 14-bit 80MHz ADC * DAC: 3.3V 8-bit 300MHz DAC * DAC: 1.2V 8-bit 2MHz DAC * The shortest TAT for customer-specific cores 3.3V 12-bit 80MHz ADC 3.3V 14-bit 40MHz DAC 1.2V 8-bit 80MHz DAC * PLL: 3.3V 800MHz FSPLL * PLL: 1.2V 100M/300M/500M FSPLL 1.8V 200MHz Pixel Clock Gen 1.2V 230MHz Dithered PLL * CODEC: 3.3V 16-bit Audio DAC * CODEC: 2.5V 16-bit Audio DAC 3.3V 16-bit Audio CODEC ASIC LINE-UP TABLE FOR COMPILED MEMORY SPSRAM SPSRAMBW SPSRAMR DPSRAM DPSRAMBW DPSRAMR SPARAM SPARAMBW ARFRAM SRFRAM DROM @ Active MROM @ Met-2 VROM @ Via-1 FIFO CAM HCSPSRAM HCVROM @ Via-1 STD90 L35 HD A A NA A NA NA A NA NA NA A A NA NA NA NA NA L25 HD A A NA A NA NA A NA A NA A A NA NA NA NA NA STD110 MDL120 LD25 LP HD A A NA A NA NA A A NA NA NA NA A NA NA NA NA NA NA NA A A A A NA NA NA NA NA NA NA NA NA NA HD A A A A A NA NA A A NA A A NA A A A A STD130 L18 LP A A NA A A NA NA NA NA NA NA NA NA NA NA NA NA STDL130 L18L HD LP A A A A A NA A A A A NA NA NA NA A NA NA NA NA NA A NA A NA NA NA A NA A NA NA NA NA NA STDH150 L13HS HD LP A NA A NA A NA A NA A NA A NA NA NA NA NA NA NA A NA NA NA NA NA A NA AR NA AR NA AR NA AR NA STD150 L13G HD A A A A A A NA NA NA A NA NA A AR A A A STDL1 L13LP LP A A A A A A NA NA NA NA NA NA NA NA NA NA NA HD AR AR AR AR AR AR AR AR NA A NA NA A AR AR AR AR LP A A A A A A NA NA NA NA NA NA NA NA NA NA NA NOTES: A = Available AR = Available Upon Request E = Under Development (design and layout will be finished by the date) NA = Not Available SEPTEMBER 2006 BR-06-ALL-002 SAMSUNG SEMICONDUCTOR, INC. 5b B Section SYSTEM LSI ASIC Ordering Information ASIC ORDERING INFORMATION S 1 6 2 X 3 X 4 X 5 1. System LSI (S) X 6 X 7 X 8 X 9 X 10 11 X 12 12~14. Package Type 2. Large Classification: ASIC (6) A : STN (Character) B : STN (Graphic) C : TFT (Large) D : TFT (Mobile) F : TFT (Midsmall) E : OELD P : PDI (DUAL) T : TCON (12)(13) Film Type A : SDIP B : BUMP BIZ 00~49 TAB C : CHIP BIZ E : LQFP 50~99 COF J : ELP K : TR N : COB Q : QFP S : SOP T : TQFP W : WAFER X : ETQFP (13) Reserved A~Z *1st Version X 9~10. Mask Option (14) Revision 1st Version X 15. Custom 0 : No Grinding 4~7. 8. Version X 15 - In Case of TAB / COF - In Case of PKG V : Process Vehicle Serial No X 14 (14) Packing (12) Package Type 3. Small Classification X 13 - PKG Option 5 : 20010um 0 : none 8 : 30010um (CHIP BIZ) 1 : 250ae10um 9 : 280ae10um 1 : Special Handling 1 2 : Special Handling 2 A : 30010um 3 : Special Handling 3 A : Test Condition 1 C : 30010um (Wafer) B : Customer Option 1 C : Customer Option 2 G : 37510um (CHIP BIZ) J : 42510um D : Customer Option 3 E : Customer Option 4 K : 40010um L : 45010um G : Customer Option 6 H : Customer Option 7 M : 47010um (Wafer) N : 47010um K : Customer Option 9 R : 35010um (Wafer) U : 61010um - STN (Character) J : Customer Option 8 00~99 : Font L : Customer Option 10 M : Customer Option 11 V : 50010um (CHIP BIZ) - STN (Graphic) N : Customer Option 12 P : Customer Option 13 W : 42510um (Wafer) X : 42510um (CHIP BIZ) Mask Option - TFT Device - WAFER Mask Option 0 : BUMP Y : 47010um (CHIP BIZ) 1 : NO BUMP Z : No Grinding (CHIP / Wafer) 11. " - " 6b SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-002 SEPTEMBER 2006 Section SYSTEM LSI LCD Driver ICs B STN CHARACTER LCD DRIVER ICs Part Number S6A0031 S6A0032 S6A0065 S6A0069 S6A0070 S6A0071 S6A0072 S6A0073 S6A0074 S6A0075 S6A0078 S6A0079 S6A0090 S6A0093 S6A0094* S6A0067 S6A2068 CGRAM (Ch.) 80 (2) 80 (2) Interface (Bit) 8-Apr 8-Apr 16 16 32 16 34 34 34 34 34 26 26 34 CG ROM (Ch.) 10160 (254) 10160 (254) 40 10080 (236) 8320 (224) 8400 (240) 9600 (240) 9600 (240) 9600 (240) 9600 (240) 9600 (240) 9600 (240) 10240 (256) 10240 (256) 21760 (544) 512 (8) 512 (8) 512 (8) 160 (4) 512 (8) 512 (8) 512 (8) 512 (8) 512 (8) 160 (4) 320 (8) 80 (6) 8-Apr 8-Apr 8-Apr 8-Apr 4-Jan 4-Jan 4-Jan 4-Jan 4-Jan 4-Jan 4-Jan 4-Jan 16 8320 (224) 512 (8) 8-Apr Segment 80 80 Common 8 16 40 80 60 40 60 80 100 120 120 64 80 80 80 60 NOTES: Devices marked with an asterisk (*) are under development. TCP (Tape Carrier Package) VDD (V) 2.4~5.5 2.4~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.4~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.4~5.5 2.4~5.5 2.2~3.6 2.7~5.5 2.7~5.5 Vlcd (Max. V) 6 6 13 13 10 13 11 13 13 13 13 13 11 6 7 10 10 DC/DC Convert (Times) 2 2~3 2~3 2~3 2~3 2~3 2~3 4 4 Package Au bump chip Au bump chip Bare die/64QFP Bare die/80QFP Bare die/Au bump chip Au bump chip/TCP Au bump chip Bare die Bare die Bare die Bare die/TCP Bare die Au bump chip/TCP Au bump chip/TCP Au bump chip Bare die/100QFP Bare die/ Bare die is equivalent term with bare chip, pellet or die. COF (Chip On Film) is available in case of TCP. STN GRAPHIC LCD DRIVER ICs Part Number S6B0107 S6B0086 S6B0715 S6B0717 S6B0718 S6B0719 S6B0723 S6B0724 S6B0725 S6B0728 S6B0741 S6B0755 S6B0756 S6B0759 S6B2400 S6B0794 S6B0796 S6B1713 Segment V 100 100 104 160 132 132 104 132 128 128 96 128 96 160 240 132 Common 64 80 33 55 81 105 65 65 65 128 129 65 65 81 65 160 240 65 DDRAM (Bits) Interface (Bit) 1 4-Jan 8580 8-Jan 6500 8-Jan 9256 8-Jan 16800 8-Jan 8580 8-Jan 8580 8-Jan 6860 8-Jan 16896 8-Jan 33024 8-Jan 8320 8-Jan 6240 8-Jan 10368 8-Jan 12480 8-Jan 8-Apr 8-Apr 8580 8-Jan VDD (V) 4.5~5.5 2.7~5.5 2.4~5.5 2.4~5.5 2.4~3.6 2.4~3.6 2.4~5.5 2.4~5.5 2.4~3.6 2.4~3.6 1.8~3.3 1.8~3.3 1.8~3.3 1.8~3.3 1.8~3.3 2.4~5.5 2.4~5.5 2.4~5.5 Vlcd (Max. V) 17 28 15 15 15 15 15 15 15 15 15 15 12 15 12 32 32 15 DC/DC Convert (Times) 2~4 2~5 3~6 3~6 2~5 2~5 2~5 3~7 3~6 3~5 2~4 3~6 3~5 2~5 Package Au bump chip/TCP Au bump chip/TCP Au bump chip/TCP Au bump chip/TCP TCP Au bump chip Au bump chip Au bump chip/TCP TCP Au bump chip/TCP Au bump chip Au bump chip/TCP Au bump chip Au bump chip/TCP Au bump chip/TCP Au bump chip/TCP NOTES: Bare die is equivalent term with bare chip, pellet or die. TCP (Tape Carrier Package) COF (Chip On Film) is available in case of TCP. SEPTEMBER 2006 BR-06-ALL-002 SAMSUNG SEMICONDUCTOR, INC. 7b B Section SYSTEM LSI LCD Driver ICs STN GRAPHIC COLOR LCD DRIVER ICs Device Name S6B33A1 S6B33A2 S6B33B0 S6B3300* Segment 132 128 144 104 Common 160 129 177 80 Color Depth 256/4k 256/4k 256/4k/65k 256/4k DDRAM (Bits) 266,112 196,608 405,504 99,840 VDD (V) 1.8~3.6 1.8~3.3 1.8~3.3 1.8~3.3 Vlcd (Max. V) 20 20 20 15 DC/DC Convert (Times) V V V V Package Au bump chip Au bump chip Au bump chip Au bump chip NOTES: Devices marked with an asterisk (*) are under development. TCP (Tape Carrier Package) Bare die is equivalent term with bare chip, pellet or die. COF (Chip On Film) is available in case of TCP. STN GRAPHIC LCD DRIVER ICs Part Number S6D0110 S6D0114 S6D0117 S6D0118 S6D0123 S6D0129 Bit Map Area RGB 132 132 132 176 132 240 Gate 176 176 132 240 176 320 Color Depth 260K 260K 260K 260K 260K 260K (RAM) 132*18*176 132*18*176 132*132*18 176*18*240 132*18*176 240*18*320 Vlcd VCl(V) 2.5~3.3 2.5~3.3 2.5~3.3 2.5~3.3 2.5~3.3 2.5~3.3 (Max. V) 25V Max 25V Max 25V Max 25V Max 25V Max 30V Max Package Au bumped chip Au bumped chip Au bumped chip Au bumped chip Au bumped chip Au bumped chip NOTES: TCP (Tape Carrier Package) COF (Chip On Film) is available in case of TCP 8b SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-002 SEPTEMBER 2006 Section SYSTEM LSI LCD Driver IC Ordering Information B LCD DRIVER IC ORDERING INFORMATION S 1 6 2 X 3 X 4 X 5 X 6 X 7 X 8 1. System LSI (S) 11. " - " 2. Large Classification: LDI (6) 12~14. Package Type X 9 X 10 11 X 12 X 13 X 14 X 15 (14) Packing - In Case of TAB / COF (12)(13) Film Type - In Case of PKG 3. Small Classification A : SDIP B : BUMP BIZ E : LQFP A : STN (Character) B : STN (Graphic) C : CHIP BIZ C : TFT (Large) D : TFT (Mobile) J : ELP K : TR F : TFT (Midsmall) E : OELD N : COB Q : QFP P : PDI (DUAL) T : TCON S : SOP T : TQFP W : WAFER X : ETQFP V : Process Vehicle 4~7. (13) Reserved Serial No. *1st Version 9~10. Mask Option - STN (Character) 00~99: Font - STN (Graphic) Mask Option - TFT Device Mask Option SEPTEMBER 2006 X COF (14) Revision 1st Version X 15. Back Lap 1 : 25010um 5 : 20010um 0 : none A~Z TAB 50~99 0 : No Grinding - PKG Option 8. Version 00~49 8 : 30010um (CHIP BIZ) 9 : 28010um 1 : Special Handling 1 2 : Special Handling 2 A : 30010um 3 : Special Handling 3 A : Test Condition 1 C : 30010um (Wafer) B : Customer Option 1 C : Customer Option 2 G : 37510um (CHIP BIZ) J : 42510um D : Customer Option 3 E : Customer Option 4 K : 40010um L : 45010um G : Customer Option 6 H : Customer Option 7 M : 47010um (Wafer) N : 47010um J : Customer Option 8 K : Customer Option 9 R : 35010um (Wafer) U : 61010um L : Customer Option 10 M : Customer Option 11 V : 50010um (CHIP BIZ) N : Customer Option 12 P : Customer Option 13 W : 42510um (Wafer) X : 42510um (CHIP BIZ) - WAFER Y : 47010um (CHIP BIZ) 0 : BUMP 1 : NO BUMP BR-06-ALL-002 Z : No Grinding (CHIP / Wafer) SAMSUNG SEMICONDUCTOR, INC. 9b Section B SYSTEM LSI Processors/HDTV Products MOBILE APPLICATION PROCESSORS Part Number CPU(Cache) Max Freq S3C44B0 66MHz Memory Inteface Data Bus (bit) ARM7TDMI (8KB) ARM926EJ-S (8KB-I,8KB-D) ROM/SRAM SDRAM 200/266MHz ROM/SRAM SDRAM/mSDRAM NAND 8,16,32 S3C2413 ARM926EJ-S (8KB-I,8KB-D) 266MHz 8,16,32 S3C2440 ARM920T (16KB-I,16KB-D) 300MHz 400MHz SC32442 ARM920T (16KB-I,16KB-D) 300MHz 400MHz S3C24A0 ARM926EJ-S 266MHz (16KB-I, 16KB-D) ROM/SRAM SDRAM/mSDRAM NAND 8,16,32 S3C2460 ARM926EJ-S (16KB-I,16KB-D) Teak DSP 266MHz ROM/SRAM SDRAM/mSDRAM mDDR/NAND 8,16,32 S3C2443 ARM920T (16KB-I,16KB-D) 400MHz 533MHz ROM/SRAM SDRAM/mSDRAM DDR/mDDR NAND/oneNAND 8,16,32 S3C2412 ROM/SRAM SDRAM/mSDRAM DDR/mDDR NAND/oneNAND ROM/SRAM SDRAM/mSDRAM NAND 8,16,32 8,16,32 Stacked with 8,16,32 32/64MB mSDRAM, 64/128MB NAND Features Mono/Color/Gray STN Cont., 10 ADC x 8 TFT/STN(65K) LCD Cont., NAND Boot, 10 ADCx8(TSP), USB hostx2, USB device, SD(SDIO)/MMC TFT/STN LCD Cont., ATA Interfaces, NAND Boot, 10 ADCx8(TSP), USB hostx2, USB device, SD(SDIO)/MMC, Camera I/F TFT/STN LCD Controller, NAND Boot, 10 ADCx8(TSP), USB hostx2, USB device, SD(SDIO)/MMC, Camera I/F AC97 TFT/STN LCD Controller, NAND Boot, 10 ADCx8(TSP), USB hostx2, USB device, SD(SDIO)/MMC, Camera I/F AC97 TFT/STN LCD Controller, AC97, Camera I/F, NAND Boot, 10 ADCx8(TSP), MPEG4 CODEC,SD(SDIO)/MMC 8bit Modem I/F(4KB dual), Memory Stick TFT/STN LCD Controller, AC97, Camera I/F, NAND Boot, 10 ADCx8(TSP), MPEG4 CODEC,SD(SDIO)/MMC USB hostx2, USB device, USB OTG 2D,3D Graphic/Memory Stick TFT/STN LCD Controller, AC97, Camera I/F, ATA Interfaces, NAND Boot, 10 ADCx10(TSP), SD(SDIO)/MMC/HS MMC 8bit Modem I/F(4KB dual), USB hostx2, USB 2.0 Device I/O Pins Interrupt (Ext) Timer/ Counter Serial Interface 71 31(8) 115 55(24) WDT/16TCx5 Internal 16TC WDT/16TCx4 Internal 16TC UARTx2 IIC/IIS UARTx3 SPIx2/IIC/IIS 129 55(24) WDT/16TCx4 Internal 16TC 130 59(24) 130 DMA PKG 4-ch 4-ch 160LQFP 160FBGA 272FBGA UARTx3 SPIx2/IIC/IIS 4-ch 289FBGA WDT/16TCx4 Internal 16TC UARTx3 SPIx2/IIC/IIS 4-ch 289FBGA 59(24) WDT/16TCx4 Internal 16TC UARTx3 SPIx2/IIC/IIS 4-ch 332FBGA 32 60(19) WDT/16TCx4 Internal 16TC UARTx2(IrDA) SPI/IIC/IIS IrDA(v1.1) 4-ch 337FBGA 154 61(16) WDT/16TCx4 Internal 16TC UARTx3(IrDA) SPIx2/IIC/IIS IrDA(v1.1) 4-ch 416FBGA 174 69(23) WDT/16TCx4 Internal 16TC UARTx4(IrDA) SPIx2/IIC/IIS IrDA(v1.1) 6-ch 400FBGA CMOS IMAGE SENSORS Part Number S5K53BE S5KA3A S5K3AA S5K4AA S5K5AA S5K3BAF S5K3B1F S5K4BA S5K3C1F NOTE: 10b Type SOC SOC SOC SOC SOC SOC CIS SOC CIS Resol. VGA VGA SXGA SXGA SXGA UXGA UXGA UXGA QXGA O/F 1/5.8" 1/10" 1/3.2" 1/4" 1/5" 1/3.2" 1/3.2" 1/4" 1/2.7" Pixels Horizontal 640 640 1280 1280 1280 1600 1600 2048 2048 Pixels Vertical 480 480 1024 1024 1024 1200 1200 1024 1536 Pixel Size 4 2.25 3.5 2.8 2.25 2.8 2.8 2.25 2.5 Package wafer or die wafer or die wafer or die wafer or die wafer or die wafer or die wafer or die wafer or die wafer or die Production Status MP Sampling MP MP Sampling Sampling Sampling MP Under Development * O/F: Optical Format SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-002 SEPTEMBER 2006 B Section SYSTEM LSI Image Sensors/Microcontrollers 4-BIT MICROCONTROLLER FAMILY Part Name Package Type S3C1xxx (KS51) Series S3C1840DZ0-DKB1 20DIP S3C1840DZ0-SKB1 20SOP S3C1840DZ0-SMB1 24SOP S3C1850DZ0-SMB1 24SOP S3C1860XZ0-DKB1 20DIP S3C1860XZ0-SKB1 20SOP S3C7xxx (KS57) Series S3C7048DZ0-AQB4 42SDIP S3C7048DZ0-QZR4 44QFP S3C7048DZ0-AQB8 42SDIP S3C7048DZ0-QZR8 44QFP S3C70F4XZ0-AVB4 30SDIP S3C70F4XZ0-SOB4 32SOP S3C7235DZ0-QWR8 80QFP S3C7235DZ0-QWR5 S3C72H8XZ0-QTR8 64QFP S3C72K8XZ0-QWR8 80QFP S3C72M9XZ0-QAR5 128QFP S3C72M9XZ0-QAR7 S3C72M9XZ0-QAR9 S3C72N5XZ0-QWR8 80QFP S3C72N5XZ0-QWR5 S3C72P9XZ0-QXR5 100QFP S3C72P9XZ0-QXR7 S3C72P9XZ0-QXR9 S3C72Q5XZ0-QXR8 100QFP S3C72Q5XZ0-QXR5 S3C7324XZ0-QTR4 64QFP S3C7335XZ0-QWR8 80QFP S3C7335XZ0-QWR5 S3C7414DZ0-AQB4 42SDIP S3C7414DZ0-QZR4 44QFP S3C7515DZ0-ATB5 64SDIP S3C7515DZ0-QTR5 64QFP S3C7528DZ0-AQB4 42SDIP S3C7528DZ0-QZR4 44QFP S3C7528DZ0-AQB8 42SDIP S3C7528DZ0-QZR8 44QFP S3C7544XZ0-AMB4 24SDIP S3C7544XZ0-SMB4 24SOP S3C7559XZ0-ATB9 64SDIP S3C7559XZ0-QTR9 64QFP S3C7565XZ0-QXR5 100QFP S3C7588AZ0-C0C8 44Pellet ROM Kbytes RAM Nibble I/O Pins 1 32 1 1 4 Interrupt (Int/Ext) Timer/ Counters Max. OSC. Freq. Vdd (V) OTP Equivalent 15/19 6MHz 1.8~3.6 n/a 32 32 19 15 6MHz 6MHz 1.8~3.6 1.8~3.6 n/a n/a 512 36 3/4 BT/WT/8Tx2 Yes 6MHz 1.8~5.5 S3P7048D 4 512 24 3/2 BT/WT/8TC Yes 6MHz 1.8~5.5 S3P70F4X 8 16 8 8 16 24 32 8 16 16 24 32 8 16 4 8 16 4 512 40 3/3 BT/WT/WDT/8T Yes 6MHz 1.8~5.5 S3P7235X 512 1024 3840 21 27 51 3/3 3/4 5/4 BT/WT/WDT/8T/16T BT/WT/8TC Yes BT/WT/WDT/8T/16T Yes 26/4 40/8 80/16 6MHz 6MHz 6MHz 1.8~5.5 2.0~5.5 1.8~5.5 S3P72H8X S3P72K8X S3P72M9X 512 40 3/3 BT/WT/8TC Yes 32/4 6MHz 1.8~5.5 S3P72N5X 1056 39 4/4 BT/WT/8TC/16TC Yes 56/16 6MHz 1.8~5.5 S3P72P9X 5264 39 3/3 BT/WT/8TCx2 60/12 6MHz 1.8~5.5 S3P72Q5X 256 512 32 56 2/3 4/4 BT/WT/WDT/8T BT/WT/WDT/8T Yes 6MHz 6MHz 1.8~5.5 1.8~5.5 S3P7324X S3P7335X 256 35 5/3 BT/WT/WDT/8Tx2 Yes 6MHz 1.8~5.5 S3P7414D 16 512 55 4/3 BT/WT/8Tx2 Yes Yes 6MHz 2.0~5.5 S3P7515D 4 768 35 3/3 BT/WT/WDT/8Tx2 Yes 6MHz 1.8~5.5 S3P7528D 4 512 17 2/2 BT/WDT/8T 6MHz 1.8~5.5 S3P7544X 32 1024 55 4/3 BT/WT/WDT/8Tx2 Yes 6MHz 1.8~5.5 S3P7559X 16 8 5120 768 49 25 5/4 4/4 BT/WT/WDT/8T/16T Yes BT/WT/WDT/8TCx2 Yes Yes 6MHz 3.58MHz 1.8~5.5 2.7~5.5 S3P7565X S3P7588X SIO LCD (Seg/Com) ADC (Bit x Ch) PWM(1) (BitxCh) DTMF 8 Comx4 32/4 28/4 28/4 Comx2 Comx2 Comx3 8x4 8x4 8x6 (8x1) 8 Yes 60/16 NOTES: *Under development. Contact Samsung sales office for availability. (3) Flash: Writing endurance is 10K times (4) MTP: Writing endurance is 100 times (1) ( ) S/W supported PWM (2) SIO mode can be selected by S/W Abbreviations: ADC=Analog to Digital Converter SEPTEMBER 2006 BR-06-ALL-002 DTMF=Dual Tone Multi Frequency CAS=CPE Alerting Signal PWM=Pulse Width Modulation SIO=Serial Input/Output 8T/16T=8-bit /16-bit Timer BT/WT/WDT=Basic/Watch/Watchdog Timer DAC=Digital to Analog Converter ZCD=Zero Cross Detection circuit Com=Comparator FSK=Frequency Shift Keying SAMSUNG SEMICONDUCTOR, INC. 11b B Section SYSTEM LSI Microcontrollers 8-BIT MICROCONTROLLER FAMILY Part Name Package ROM Type Kbytes S3C9xxx (KS86) Series S3C9228AZ0-AQB8 42SDIP S3C9228AZ0-QZR8 44QFP S3C9228AZ0-LRR8 48ELP S3C9234XZ0-QTR4 64QFP S3C9404DZ0-AVB4 30SDIP S3C9404DZ0-SOB4 32SOP S3C9428XZ0-SNB4 28SOP S3C9428XZ0-SOB4 32SOP S3C9428XZ0-AVB4 30SDIP S3C9428XZ0-SNB8 28SOP S3C9428XZ0-SOB8 32SOP S3C9428XZ0-AVB8 30SDIP S3C9434XZ0-DIB4 18DIP S3C9434XZ0-DKB4 20DIP S3C9434XZ0-SKB4 20SOP S3C9444XZ0-SCB4 8SOP S3C9444XZ0-DCB4 8DIP S3C9454BZ0-DHB4 16DIP S3C9454BZ0-SHB4 16SOP S3C9454BZ0-VHB4 16TSSOP S3C9454BZ0-DKB4 20DIP S3C9454BZ0-SKB4 20SOP S3C9454BZ0-VKB4 20SSOP S3C9488XZ0-AOB8 32SDIP S3C9488XZ0-SOB8 32SOP S3C9488XZ0-AQB8 42SDIP S3C9488XZ0-QZR8 44QFP S3C9498XZ0-SNB8 28SOP S3C9498XZ0-SOB8 32SOP S3C9498XZ0-AOB8 32SDIP S3C9498XZ0-AVB8 30SDIP S3C94A5XZ0-QZR5 44QFP S3C94A5XZ0-AQB5 42SDIP S3C9688XZ0-AQB8 42SDIP S3C9688XZ0-QZR8 44QFP S3C8xxx (KS88) Series S3C80A5BZ0-SMB8 24SOP S3C80A5BZ0-AMB8 24SDIP S3C80A5BZ0-SMB5 24SOP S3C80A5BZ0-AMB5 24SDIP S3C80B5XZ0-SMB8 24SOP S3C80B5XZ0-AMB8 24SDIP S3C80B5XZ0-SMB5 24SOP S3C80B5XZ0-AMB5 24SDIP S3C80C5XZ0-SMB8 24SOP S3C80C5XZ0-AMB8 24SDIP S3C80C5XZ0-SMB5 24SOP S3C80C5XZ0-AMB5 24SDIP S3C80F9BZ0-SOB7 32SOP S3C80F9BZ0-AQB7 42SDIP S3C80F9BZ0-QZR7 44QFP S3C80F9BZ0-LRR7 48ELP S3C80F9BZ0-SOB9 32SOP S3C80F9BZ0-AQB9 42SDIP S3C80F9BZ0-QZR9 44QFP S3C80F9BZ0-LRR9 48ELP S3C80G9BZ0-SNB7 28SOP S3C80G9BZ0-SOB7 32SOP S3C80G9BZ0-AQB7 42SDIP S3C80G9BZ0-QZR7 44QFP S3C80G9BZ0-SNB9 28SOP S3C80G9BZ0-SOB9 32SOP S3C80G9BZ0-AQB9 42SDIP S3C80G9BZ0-QZR9 44QFP S3C80J9XZ0-S0B9 32SOP S3C80J9XZ0-SNB9 28SOP S3C80JBXZ0-QZRB 44QFP 12b RAM Bytes I/O Pins Interrupt Timer/ (Int/Ext) Counter Serial Interface LCD (Seg/Com) ADC PWM(1) (Bit x Ch) (BitxCh) Max. OSC. Freq. Vdd (V) OTP or Flash Equivalent 8 256 36 4/10 BT/WT/8TCx2 SIO 16x8 10x4 8MHz 2.0~5.5 S3P9228A 4 4 208 208 52 22 5/7 3/3 BT/WT/8TCx2 BT/WDT/8Tx2 SIO 32/4 4 208 24 5/4 BT/WDT/8Tx2 4 112 11/13 3/2 BT/WDT/8T 4 208 6 1/2 BT/8TC 10x3 4 208 14/18 2/2 BT/8TC 10x9 8 208 26/36/38 6/4 BT/8T UART 8 208 22/24/26 11/5 BT/8TCx4/16TC SIO, UART 16 368 34 8/15 BT/WT/8TC/16TCx2 SIO 8 208 32 15/14 BT/WDT/8T 8 272 19 5/8 BT/WDT/8Tx2/16T 272 19 5/8 272 19 272 8x8 (10x1) 8MHz 10MHz 2.0~5.5 2.7~5.5 S3P9234X S3P9404D IIC, SIO 10x12 12x2, (8x1) 16MHz 1.8~5.5 S3P9428X SIO 10x5 12x1 16MHz 3.0~5.5 S3P9434X 10MHz 2.0~5.5 S3F9444X(4) 10MHz 2.0~5.5 S3F9454B(4) 10MHz 2.2~5.5 S3F9488X(4) 8 19/8 8x1 10x9 10x8 12x1, (8x1) 8MHz 2.0~5.5 S3F9498X(4) 10x16 8x1, 16x2 12MHz 2.0 ~5.5 S3F94A5X(4) 6MHz 4.0~5.25 S3P9688X 8x1 8MHz 2.0~3.6 S3P80A5A BT/WDT/8Tx2/16T 8x1 4MHz 1.7~3.6 S3P80B5X 5/8 BT/WDT/8Tx2/16T 8x1 4MHz 1.7~3.6 S3P80C5X 38 5/16 BT/8TC/16TC 8x1 8MHz 2.0~5.0 S3P80F9X 272 38 5/16 BT/8TC/16TC 8x1 4MHz 1.7~3.6 S3P80G9X 32 272 26 12/10 BT/8T/16T 8x1 8MHz 1.95~3.6 S3F80J9X(3) 64 272 38 14/10 BT/8T/16Tx2 8x1 8MHz 1.95~3.6 S3F80JBX(3) USB 16 8 16 8 16 24 32 24 32 SAMSUNG SEMICONDUCTOR, INC. COMx4 BR-06-ALL-002 SEPTEMBER 2006 Section SYSTEM LSI Microcontrollers B 8-BIT MICROCONTROLLER FAMILY Part Name Package ROM Type Kbytes S3C8xxx (KS88) Series RAM Bytes I/O Pins Interrupt Timer/ (Int/Ext) Counter Max. OSC. Freq. Vdd (V) OTP or Flash Equivalent 4 144 26 14/10 2/8 BT/8TC 8x1 8MHz 2.0~5.5 S3F80L4X(4) 4 128 15/11 2/4 BT/8TC 8x1 10MHz 2.0~5.5 S3F80M4X(4) 8 552 32 8/8 BT/8TCx2/16TC 24/8 10x8 8x2 8MHz 2.0~5.5 S3F8235X(4) 544 45 8/8 BT/WDT/8Tx2/16Tx2 SIO 32/4 10x8 (8x2, 16x1) 10MHz 1.8~5.5 S3P8245X 1056 45 8/8 BT/WDT/8Tx2/16Tx2 SIO 32/4 10x8 (8x2, 16x1) 10MHz 1.8~5.5 S3P8249X 48 2096 67 11/12 BT/WT/8TC/16TC SIO, UART 28/8 10x4 (8x1, 16x1) 8MHz 2.0~5.5 S3P825AX 48 4 2k 256 128 52 9/12 4/8 BT/8TCx3/16TC WT/BT/8TCx2 SIO SIO 80/16 32/4 8x4 8x2 2.0~5.5 2.0~3.6 S3P826AX S3F8274X(4) 16 512 S3F8275X(3) 8 256 S3F8278X(4) 16 512 32 1024 S3F8289X(4) 64 2560 S3F828BX(3) 16 208 38 5/4 BT/WT/8TC 16 2.5K 44 6/12 BT/WT/8TCx2/16TC SIO 60/16 48 64 2084 2.5K 72 72 10/8 10/8 BT/WDT/8Tx2/16T SIOx2 BT/WDT/WT/8Tx2/16T SIOx2 40/4 40/4 16 512 64 9/12 BT/WDT/WT/8Tx2/16T SIO 28/8 S3C80JBXZ0-AQBB S3C80JBXZ0-SOBB S3C80L4XZ0-AOB4 S3C80L4XZ0-SOB4 S3C80L4XZ0-SNB4 S3C80M4XZ0-DKB4 S3C80M4XZ0-SKB4 S3C80M4XZ0-DHB4 S3C80M4XZ0-SHB4 S3C8235BZ0-QTR8 S3C8235BZ0-ETR8 S3C8235BZ0-QTR5 S3C8235BZ0-ETR5 S3C8245AZ0-TWR8 S3C8245AZ0-QWR8 S3C8245AZ0-TWR5 S3C8245AZ0-QWR5 S3C8249XZ0-TWR7 S3C8249XZ0-QWR7 S3C8249XZ0-TWR9 S3C8249XZ0-QWR9 S3C825ACZ0-TWRA S3C825ACZ0-QWRA S3C826AXZ0-QCRA S3C8274XZ0-QTR4 S3C8274XZ0-ETR4 S3C8275XZ0-QTR5 S3C8275XZ0-ETR5 S3C8278XZ0-QTR8 S3C8278XZ0-ETR8 S3C8285XZ0-QWR5 S3C8285XZ0-TWR5 S3C8289XZ0-QWR9 S3C8289XZ0-TWR9 S3C828BXZ0-QWRB S3C828BXZ0-TWRB S3C82E5XZ0-QZR5 S3C82E5XZ0-TBR5 S3C82F5XZ0-QXR5 S3C82F5XZ0-TXR5 S3C830AXZ0-QXRA S3C831BXZ0-QXRB S3C831BXZ0-TXRB S3C8325XZ0-QWR5 S3C8325XZ0-TWR5 S3F833BXZ0-QXRB 42SDIP 32SOP 32SDIP 32SOP 28SOP 20DIP 20SOP 16DIP 16SOP 64QFP 64LQFP 64QFP 64LQFP 80TQFP 80QFP 80TQFP 80QFP 80TQFP 80QFP 80TQFP 80QFP 80TQFP 80QFP 144QFP 64QFP 64LQFP 64QFP 64LQFP 64QFP 64LQFP 80QFP 80TQFP 80QFP 80TQFP 80QFP 80TQFP 44QFP 48TQFP 100QFP 100TQFP 100QFP 100QFP 100TQFP 80QFP 80TQFP 100QFP 64 2.5K 86 13/8 S3F834BXZ0-TXRB 100TQFP 64 2.5K 86 S3C8454XZ0-TWR4 S3C8454XZ0-QWR4 S3C8469XZ0-ATB5 S3C8469XZ0-QTR5 S3C8469XZ0-LTR5 S3C8469XZ0-ATB9 S3C8469XZ0-QTR9 S3C8469XZ0-LTR9 S3C8475XZ0-AQB8 S3C8475XZ0-QZR8 S3C8475XZ0-AQB5 S3C8475XZ0-QZR5 S3C848AXZZ-ATBA S3C848AXZZ-QTRA 80TQFP 80QFP 64SDIP 64QFP 64ELP 64SDIP 64QFP 64ELP 42SDIP 44QFP 42SDIP 44QFP 64SDIP 64QFP 4 1040 16 SEPTEMBER 2006 Serial Interface LCD (Seg/Com) ADC PWM(1) (Bit x Ch) (BitxCh) 16 8 16 24 32 65 10/8 BT/WT/8TCx2/16TCx2 UART, SIO SIO 32/8 10x8 8MHz 8MHz 8x1,16x1 23/4 11.1MHz 2.0~3.6 S3F8285X(4) 8MHz 2.0~3.6 S3F82E5X(4) 8x1 8MHz 2.0~5.0 S3F82F5X(4) 8x4 8x8 8x1 8x1 4.5MHz 9MHz 3.0~5.5 2.2~5.5 S3P830AX S3P831BX 8x8 8x1 4.5MHz 2.0~5.5 S3P8325X BT/WDT/WT/8Tx2/16T SIOx2, UARTx2 40/8 10x12 8x1 12MHz 2.0~3.6 13/8 BT/WDT/WT/8Tx2/16T SIOx2, UARTx2 40/8 10x12 8x1 12MHz 2.0~3.6 42 8/8 BT/WDT/8Tx2/16Tx2 SIO 8x4 8x2, (16x2) 25MHz 4.5~5.5 Flash Only S3F833BX(4) Flash Only S3F834BX(4) S3P8454X 528 56 11/10 BT/WDT/8Tx2/16Tx2 UART, SIO 10x8 14x2, (8x2) 12MHz 2.7~5.5 S3P8469X 272 36 6/8 BT/WDT/8T/16T UARTx2 10x8 (8x1, 10x1) 12MHz 2.7~5.5 S3P8475X 2064 56 15/14 BT/8TCx4/16Tx2 UARTx2 SIO 10x8 14x2, (8x2) 12MHz 2.7~5.5 S3P848AX 32 8 16 48 BR-06-ALL-002 SAMSUNG SEMICONDUCTOR, INC. 13b B Section SYSTEM LSI Microcontrollers 8-BIT MICROCONTROLLER FAMILY Part Name Package ROM Type Kbytes S3C8xxx (KS88) Series RAM Bytes I/O Pins Interrupt Timer/ (Int/Ext) Counter S3C84A4XZ0-QTR4 S3C84BBXZ0-TWRB S3C84BBXZ0-QWRB S3C84DBXZ0-TWRB S3C84DBXZ0-QWRB S3C84E9XZ0-AQB9 S3C84E9XZ0-QZR9 S3C84H5XZ0-AOB5 S3C84H5XZ0-SOB5 S3C84H5XZ0-AVB5 S3C84H5XZ0-SNB5 S3C84I8XZ0-AQB8 S3C84I8XZ0-QZR8 S3C84I9XZ0-AQB9 S3C84I9XZ0-QZR9 S3F84K4XZ0-DHB4 64QFP 80TQFP 80QFP 100TQFP 100QFP 42SDIP 44QFP 32SDIP 32SOP 30SDIP 28SOP 42SDIP 44QFP 42SDIP 44QFP 16DIP 4 64 784 2064 29 70 7/4 14/10 BT/8TCx2/16Tx2 BT/8TCx2/16TCx2/8Tx2 UARTx2, SIO 8x4 10x8 8x2, (8x2) 30MHz 8*1 (DAC) 10MHz 4.5~5.5 2.7~5.5 S3P84A4X S3F84BBX(3) 64 2064 90 14/10 BT/8TCx4/16TCx2 10x8 8*1 (DAC) 10MHz 2.7~5.5 S3F84DBX(3) 16 272 34/36 9/12 BT/WT/8T/8TC/16TCx2 UART 10x8 (8x1) 12MHz 2.7~5.5 S3P84E9X 16 272 22/20/18 12/4 BT/WT/8TCx2/16TCx2 UART, SIO 10x8 10x1 10MHz 2.4~5.5 S3F84H5X(4) 8 292 34/32 12/4 BT/WT/8TCx2/16TCx2 UART, SIO 10x8 10x1 10MHz 2.4~5.5 S3F84I8X(4) 32 528 4 208 11/18 2/2 BT/16(8X2)T 10x9 12x1 8MHz 2.0~5.5 Flash Only S3F84K4X(4) S3F84K4XZ0-SHB4 S3F84K4XZ0-VHB4 S3F84K4XZ0-RHB4 S3F84K4XZ0-DKB4 S3F84K4XZ0-SKB4 S3F84K4XZ0-VKB4 S3F84MBXZ0-TWRB* 16SOP 16SSOP 16TSSOP 20DIP 20SOP 20SSOP 80TQFP 64 2064 70 17/10 BT/8TCx2/16TCx2/8Tx2 UARTx3, SIOz2 10x5 8x2 10MHz 2.4~5.5 Flash Only S3F84MBX(3) 4 208 6 2/2 BT/16(8X2)T 10x4 12x1 10MHz 2.0~5.5 Flash Only S3F84P4X(4) 64 64 32 1808 1808 1040 42 80 27 1/7 36897 7/3 BT/WDT/WT/8T/16T UART, SIO 56/34 BT/WDT/WT/8T/16T SIO BT/8TC/8T/12C M/M IIC, Slave IIC 10x4 8x7 3.58MHz 3.58MHz 12MHz 2.7~5.5 2.7~5.5 3.0~5.5 S3P851BX S3P852BX S3P863AX S3F84MBXZ0-QWRB* 80QFP S3F84P4XZ0-SCB4* 8SOP S3F84P4XZ0-DCB4* S3C851BXZ0-QDRB S3C852BXZ0-QXRB S3C863AXZ0-AQB9 S3C863AXZ0-QZR9 S3C863AXZ0-AQBA S3C863AXZ0-QZRA S3C8647XZ0-AOB5 S3C8647XZ0-AOB7 S3C866BXZ0-AQBB* S3C866BXZ0-QZRB* S3C866BXZ0-PZBB* S3C880AXZ0-AQBA S3C8849XZ0-AQB7 S3C8849XZ0-AQB9 8DIP 160QFP 100QFP 42SDIP 44QFP 42SDIP 44QFP 32SDIP 42SDIP 44QFP 44PLCC 42SDIP 42SDIP LCD (Seg/Com) UARTx2, SIO 48/8 16/8 ADC PWM(1) (Bit x Ch) (BitxCh) Max. OSC. Freq. Vdd (V) 8x4 48 16 24 64 48 24 32 OTP or Flash Equivalent S3F84I9X(3) S3P863AX 384 19 6/3 BT/8TC/8T/12C IIC 4x4 8x6 12MHz 4.0~5.5 1040 30 9/2 BT/WDT/8TCx3 IIC 8x8 8x7 24MHz 2.3~3.6V S3F866BX(4) 336 272 26 26 5/4 5/4 BT/8TCx2 BT/WDT/8Tx2 8x4 4x4 14x2,8x4(8x1) 8MHz 14x2,8x4(8x1) 8MHz NOTES: 1 *Under Development. Contact Samsung sales office for availability 2 (1) ( ) S/W supported PWM (2) SIO mode can be selected by S/W (3) Flash: Writing endurance is 10K times (4) MTP: Writing endurance is 100 times 3 Abbreviations: LVR = Low Voltage Reset ZCD=Zero Cross Detection circuit FSK=Frequency Shift Keying RDS=Radio Data System DAC=Digital to Analog Converter PWM=Pulse Width Modulation 14b Serial Interface SAMSUNG SEMICONDUCTOR, INC. 4.5~5.5 4.5~5.5 S3F8647X(4) S3F880AX(4) S3P8849X SIO=Serial Input/Output LIN=Local Interface Network DTMF=Dual Tone Multi Frequency DDC=Display Data Channel SDT=Stuttered Dial Tone BT/WT/WDT=Basic/Watch/Watchdog timer 8T/16T=8-bit /16-bit Timer OSD=On Screen Display ADC=Analog to Digital Converter CAS=CPE Alerting Signal LVD = Low Voltage Detector PGM=Pattern Generation Module Com=Comparator BR-06-ALL-002 SEPTEMBER 2006 Section SYSTEM LSI Microcontroller Ordering Information B MICROCONTROLLER ORDERING INFORMATION S 1 3 2 X 3 X 4 X 5 X 6 X 7 X 8 1. System LSI (S) 11. (- - ) 2. Large Classification: Microcontroller(3) 12. Package Type 3. Small Classification C: MASK ROM F: FLASH 3: MCP E: EVA-CHIP P: OTP 4. Core 1: 51 4-bit 2: 32-bit ARM9 3: 17 16-bit 4: 32 32-bit 5: 32-bit ARM10 6: 56 4-bit 7: 57 4-bit 8: 88 8-bit 9: 86 8-bit A: 15 Other B: 8-bit CALM RISC MAC C: 16-bit CALM RISC MAC D: 32-bit CALM RISC MAC I: CUSTOM MCU J: SC-200 K: 8-bit CALM RISC L: 16-bit CALM RISC R: 128-bit CALM RISC S: SC-100 5~6. Application Category X 9 X 10 11 B: LGA D: DIP F: WQFP H: CSP K: UELP M: QFPH P: PLCC S: SOP V: TEBGA Y: FBGA 1n: Voice 3n: Audio 5n: Telecom 7n: VFD 9n: Special (IC Card) Cn: C Nn: Intel Application M: 24 T: 64 O: 32 V: 30 C: 83 J: 176 H: 16 N: 28 I: 18 P: 40 D: 160 J: 176 W: 80 E: 208 R: 48 X: 100 - LGA - DIP - WQFP T: 64 - BGA A: 272 B: 416 - CSP - BQFP B: 132 7. Rom Master -UELP 0: 0K byte 2: 2K byte 4: 4K byte 6: 6K byte 8: 8K byte A: 48K byte C: 96K byte F: 256K byte H: 512K byte K: 1M byte 8. Version A~Z *1st Version X 9~10. Mask Option SEPTEMBER 2006 1: 1K byte 3: 12K byte 5: 16K byte 7: 24K byte 9: 32K byte B: 64K byte D: 128K byte G: 384K byte J: 1M byte T: 64 - ELP R: 48 T: 64 - QFPH D: 160 F: 240 - COB C: 8 D: 8CNCL - PLCC C: 52 Z: 44 - QFP A: 128 E: 208 T: 64 X: 100 X 18 H: 16 M: 24 I: 18 N: 28 A: 128 X: 100 T: 64 W: 80 B: 81 E: 208 H: 320 O: 272 T: 64 C: 144 F: 180 K: 105 P: 504 1: Cust1 2: Cust2 - TEBGA X: 492 - FBGA A: 337 D: 160 G: 285 L: 400 Q: 289 14. Packing B: Tube U: Bulk R: Tray T: Tape & Reel S: Tape & Reel Reverse C: Chip Biz D: Chip Biz (3 Inch tray) E: Chip Biz (4 Inch tray) F: Chip Biz (Reverse) W: WF Biz Draft Wafer X: WF Biz Full Cutting 7: Tape & Reel (Pb-Free PKG) 8: Tray (Pb-Free PKG) 9: Tube (Pb-Free PKG) 15. ROM Size J: 176 * "n": Serial No (1Z) X 17 - TQFP 0: None - SDIP C: 144 G: 256 T: 64 X 16 - WAFER - LQFP 0n: General Purpose 2n: LCD 4n: General A/D 6n: PC & Peripheral,OA 8n: Video An: General Purpose-1 Fn: Telecom-1 Zn: Assignment Code X 15 A: 432 Wafer/CHIP BIZ = 0(NONE) C: 8 K: 20 X 14 - SBGA 3. Package Pin A: 88 X 13 C: 8 K: 20 O: 32 A: SDIP C: CHIP BIZ E: LQFP G: BGA J: BQFP L: ELP N: COB Q: QFP T: TQFP W: WAFER Z: SBGA B: 56 Q: 42 X 12 C: 144 G: 256 U: 304 Z: 44 D: 160 R: 48 W: 80 0: 0K byte 1: 1K byte 2: 2K byte 3: 12K byte 4: 4K byte 5: 16K byte 6: 6K byte 7: 24K byte 8: 8K byte 9: 32K byte A: 48K byte B: 64K byte C: 96K byte D: 128K byte E: Extended F: 256K byte G: 384K byte H: 512K byte J: 1M byte K: 1M byte M: Military N: Industrial X: Special MK3 Y: Special MK2 Z: Special MK1 * Smart Card IC: EEPROM Size * X,Y,Z: Special Marking ( MASKROM) - SOP BR-06-ALL-002 SAMSUNG SEMICONDUCTOR, INC. 15b B Section SYSTEM LSI EEPROMs SERIAL EEPROMS Write Cycle Part Number Density (bit) Write Protection Vopr (V) Time (Max) Interface Package S524A40X20-RCT0 2K by Hardware & Software 1.8 ~ 5.5 5 ms I2C BUS 8TSSOP (T&R) S524A40X21-DCB0 2K by Hardware 1.8 ~ 5.5 5ms I2C BUS 8DIP S524A40X21-SCB0 2K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP S524A40X21-SCT0 2K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R) S524A40X41-DCB0 4K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP S524A40X41-SCB0 4K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP S524A40X41-SCT0 4K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R) S524A60X51-DCB0 16K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP S524A60X51-SCB0 16K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP S524A60X51-SCT0 16K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R) S524A60X81-DCB0 8K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP S524A60X81-SCB0 8K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP S524A60X81-SCT0 8K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R) S524AB0X91-DCB0 32K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP S524AB0X91-SCB0 32K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP S524AB0X91-SCT0 32K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R) S524AB0XB1-DCB0 64K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP S524AB0XB1-SCB0 64K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP S524AB0XB1-SCT0 64K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R) S524AD0XF1-RCT0 256K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8TSSOP NOTES: 16b All listed products are in production Temperature: -25 ~ 70c All products offer 100-year data retention, a 16M page buffer and two-wired serial I2C-bus interfaces. All products operate at 100KHz, 400KHz clock frequency. Package: DCBO=8DIP SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-002 SEPTEMBER 2006 TFT-LCD PAGE MONITOR/INDUSTRIAL LCD PANELS 15", 17" 19" 20.1", 21.3" 22.0", 23.0", 24.0", 30.0" LCD TV/A.V. HD 23", 26", 32", 40", 46" FULL HD 40", 46", 52", 57" MOBILE PHONES MAIN DISPLAYS MAIN + EXTERNAL DISPLAYS INFORMATION DISPLAYS 40", 46", 57", 82" DIGITAL IMAGING: ENTERTAINMENT DSC/DVC/PHOTO PRINTERS/PMP/VOIP/GAMES MOBILE AV MINI PCS/CNS/CAR TVS/P-DVDS/ INDUSTRIAL APPLICATIONS BR-06-ALL-003 3c 3c 4c 4c 5c 5c 6c 6c 7c 8c 9c Monitor /Industrial Panels TFT-LCD MONITOR / INDUSTRIAL LCD PANELS - 15.0", 17.0" 15.0" XGA, 17.0" SXGA 15.0" XGA Resolution Number of Pixels Active Area (mm) Pixel Pitch (mm) Mode Number of Colors Contrast Ratio (typ.) Brightness (cd/m2) Response Time (ms at 25C) Color Gamut Viewing Angle (U/D/L/R) Interface Supply Voltage (V) Backlight Outline Dimensions (mm) Weight (g) Production 17.0" SXGA LTM150XO-L01 XGA LTB150XT-A01 XGA LTM170EU-L21/-L31 SXGA LTM170EX-L21 /-L31 SXGA LTM170E8 -L01 SXGA 1,024 x 768 304.1 X 228.1 0.297 BTN 16.2M 700:1 250 8ms 60% 75/60/75/75 1 Ch. LVDS 3.3 2 CCFL 326.5 x 253.5 x 11.5 1,050 Now 1,024 x 768 304.1 X 228.1 0.297 BTN 16.2M 700:1 450 8ms 60% 75/60/75/75 1 Ch. LVDS 3.3 2 CCFL 326.5 x 253.5 x TBD 1,050 Now 1,280 x 1,024 337.9 x 270.3 0.264 BTN II / BTN III 16.2M / 16.7M 700:1 / 1:000:1 300 8ms / 5ms 72% 75/75/75/60 / 160/160 2 Ch. LVDS 5 4 CCFL 358.5 x 296.5 x 17.5 2,100 Now / August 1,280 x 1,024 337.9 x 270.3 0.264 BTN II / BTN III 16.2M / 16.7M 700:1 / 1:000:1 300 8ms / 5ms 72% 75/75/75/60 / 160/160 2 Ch. LVDS 5 4 CCFL 354.9 x 290.3 x 12.8 1,650 Now / August 1,280 x 1,024 337.9 x 270.3 0.264 PVA 6-Bit Hi-FRC =16M 1,000:1 280 < 25ms 72% 89/89/89/89 2 Ch. LVDS 5 4 CCFL 354.9 x 290.3 x 13.3 1,650 Now NOTES: Samsung LCD Product Matrix is based on 2006-2007 availability MONITOR / INDUSTRIAL LCD PANELS - 19.0" 19.0" SXGA LTM190EX-L21/-L31 Resolution SXGA Number of Pixels 1,280 x 1,024 Active Area (mm) 376.3 X 301.1 Pixel Pitch (mm) 0.294 Mode BTN II / BTN III Number of Colors 16.7M Contrast Ratio 700:1 / 1:000:1 Brightness (cd/m2) 300 Response Time (ms at 25C) 8ms / 5ms Color Gamut 72% Viewing Angle (U/D/L/R) 75/75/75/60/160/160 Interface 2 Ch. LVDS Supply Voltage (V) 5 Backlight 4 CCFL Outline Dimensions (mm) 396.0 x 324.0 x 16.5 Weight (g) 2,200 Production NOTE: Now / August LTM190E4-L02 SXGA 1,280 x 1,024 376.3 X 301.1 0.294 PVA 16.7M 1,500:1 250 < 20ms 72% 89/89/89/89 2 Ch. LVDS 5 4 CCFL 396.0 x 324.0 x 17.5 2,600 LTM190E4-L03 SXGA 1,280 x 1,024 376.3 X 301.1 0.294 PVA 16.7M 1,000:1 300 < 25ms 72% 89/89/89/89 2 Ch. LVDS 5 4 CCFL 396.0 x 324.0 x 20.5 2,700 19.0" SXGA LTB190E1-L01 SXGA 1,280 x 1,024 376.3 X 301.05 0.294 S-PVA 16.7M 1,000:1 250 20ms 72% 90/90/90/90 2 Ch. LVDS 5 4 CCFL 396 x 324 x 16.5 TBD LTB190E2-L01 SXGA 1,280 x 1,024 376.3 X 301.1 0.294 PVA 16.7M 1,500:1 250 25ms 72% 89/89/89/89 2 Ch. LVDS 5 4 CCFL 388.6 x 320.5 x 15.2 2,600 LTB190E2-L02 SXGA 1,280 x 1,024 376.3 X 301.1 0.294 PVA 16.7M 1,000:1 700 25ms 72% 89/89/89/89 2 Ch. LVDS 5 4 CCFL 392.4 x 317.4 x 46.1 3,000 300 5ms 72% 80/80/80/80 2 Ch. LVDS 5 4 CCFL 428.0 x 278.0 x 18.0 2,500 Now Now Now Now Now Now LTM190M2-L01 Wide XGA+ 1,440 x 900 408.2 x 255.2 0.284 BTN III 16.7M 1,000:1 Samsung LCD Product Matrix is based on 2006-2007 availability SEPTEMBER 2006 BR-06-ALL-003 SAMSUNG SEMICONDUCTOR, INC. 3c TFT-LCD Monitor /Industrial Panels MONITOR / INDUSTRIAL LCD PANELS - 20.1", 21.3" 20.1" UXGA, 20.1" WSXGA+ 21.3" UXGA, 21.3" QXGA Resolution 20.1" UXGA LTM201U1-L01 21.3" UXGA LTM213U6-L01 21.3" QXGA LTB213QR-L01 20.1" WSXGA+ LTM201M1-L01 LTM201M2-L01 UXGA UXGA QXGA Wide SXGA+ Wide SXGA+ 1,600 x 1,200 432.0 X 324.0 0.270 S-PVA 16.7M 1,000:1 300 25ms 72% 89/89/89/89 2 Ch. LVDS 5 6 CCFL 462.0 x 361.0 x 22.5 3,500 Now 2,048 x 1,536 433.2 x 325.9 0.212 S-PVA Monochrome 10-bit 2,000:1 1,500 16ms 90/90/90/90 2 Ch. LVDS 5 6 CCFL 457 x 350 x 42.6 2,400 Now 1,680 x 1,050 433.4 x 270.9 0.258 S-PVA 16.7M 1,000:1 300 16ms (8ms G-G) 72% 89/89/89/89 2 Ch. LVDS 5 6 CCFL 459.4 x 296.4 x 23.3 3,100 Now 1,680 x 1,050 433.4 x 270.9 0.258 BTN III 6-Bit Hi-FRC =16.7M 1,000:1 300 5ms 72% 80/80/80/80 2 Ch. LVDS 5 6 CCFL 459.4 x 296.4 x 19.8 2,750 Q306 1,600 x 1,200 Active Area (mm) 408.8 x 306.0 Pixel Pitch (mm) 0.255 Mode S-PVA Number of Colors 16.7M Contrast Ratio 1,000:1 Brightness (cd/m2) 300 Response Time (ms at 25C) 8ms Color Gamut 72% Viewing Angle (U/D/L/R) 90/90/90/90 Interface 2 Ch. LVDS Supply Voltage (V) 5 Backlight 6 CCFL Outline Dimensions (mm) 432.0 x 331.5 x 25.0 Weight (g) 3,250 Production Now Number of Pixels NOTE: Samsung LCD Product Matrix is based on 2006-2007 availability MONITOR / INDUSTRIAL LCD PANELS - 22.0", 23.0", 24.0", 30.0" 22.0" WSXGA+, 23.0" WXGA 24.0" WUXGA, 24.0" WUXGA 30.0" WQXGA 22.0" WSXGA+ LTM220M1-L01 Resolution Wide SXGA+ Number of Pixels 1,680 x 1,050 Active Area (mm) 473.8 x 296.1 Pixel Pitch (mm) 0.282 Mode BTN III Number of Colors 16.7M Contrast Ratio 1,000:1 Brightness (cd/m2) 300 Response Time (ms at 25C) 5ms Color Gamut 72% Viewing Angle (U/D/L/R) 80/80/80/80 Interface 2 Ch. LVDS Supply Voltage (V) 5 Backlight 4 CCFL Outline Dimensions (mm) 493.7 x 320.1 x 17.0 Weight (g) 2,800 Production Q306 NOTE: 4c 23.0" WXGA 24.0" WUXGA 24.0" WUXGA 30.0" WQXGA LTB230W1-L01 WXGA 1,366 x 768 508.15 x 324.0 0.372 S-PVA 16.7M 1,200:1 350 25ms 72% 90/90/90/90 2 Ch. LVDS 5 6 CCFL 546.0 x 318.3 x 46.3 3,000 Now LTM240M2-L02 Wide UXGA 1,920 x 1,200 518.4 X 324.0 0.270 S-PVA 16.7M 1,000:1 500 6ms (Grey to Grey) 72% 89/89/89/89 2 Ch. LVDS 5 6 CCFL, Direct BLU 546.4 x 352.0 x 35.8 3,200 Now LTB240M1-L01 Wide UXGA 1,920 x 1,200 518.4 X 324.0 0.270 S-PVA 16.7M 1,000:1 250 8ms (Grey to Grey) 104% 90/90/90/90 2 Ch. LVDS 5 LED Backlight 549.1x 368.4 x 33 TBD Q107 LTB300M1-P01 Wide QXGA 2,560 x 1,600 641.3 x 400.8 0.251 S-PVA 16.7M 1,000:1 400 8ms 72% 90/90/90/90 Dual TMDS 12 16 CCFL 677.3 x 436.8 x 42.3 5,100 Now Samsung LCD Product Matrix is based on 2006-2007 availability SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-003 SEPTEMBER 2006 LCD TV / A.V. TFT-LCD HD LCD TV / A.V. - 23", 26", 32", 40", 46" 23",26",32",40",46" HD 23" LTA230W2-L01 Resolution WXGA Number of Pixels 1,366 x 768 Active Area (mm) 508.1 x 285.7 Pixel Pitch (mm) 0.372 Wide V/A Technology PVA Number of Colors 16.7M Color Gamut 72 Contrast Ratio 1,200:1 Brightness (cd/m2) 450 Response Time (ms at 25C) 8 (G/G) Interface LVDS (1 ch.) Outline Dimensions (mm) 546.0 x 318.3 x 47.3 Weight (kg) 3.0 Production Q306 26" LTA260W3-L01 WXGA 1,366 x 768 575.8 x 323.7 0.422 PVA 16.7M 72 1,200:1 450 8 (G/G) LVDS (1 ch.) 626.0 x 373.0 x 48.0 4.5 Q306 32" LTA320WT-L16 WXGA 1,366 x 768 697.7 x 392.2 0.511 S-PVA 16.7M 72 1,200:1 500 8 (G/G) LVDS (1 ch.) 760.0 x 450.0 x 50.0 7.0 Q306 40" LTA400WT-L11 WXGA 1,366 x 768 885.2 x 497.7 0.648 S-PVA 16.7M 72 1,200:1 500 8 (G/G) LVDS (1 ch.) 952.0 x 551.0 x 50.1 11.5 Now LTA400WS-LH1 WXGA 1,366 x 768 885.2 x 497.7 0.648 S-PVA 16.7M 92 1,200:1 500 8 (G/G) LVDS (1 ch.) 952.0 x 551.0 x 50.1 11.5 Now 46" LTA460WT-L03 WXGA 1,366 x 768 1,018.1 x 572.5 0.746 S-PVA 16.7M 72 1,200:1 500 8 (G/G) LVDS (1 ch.) 1,083.0 x 627.0 x 56.5 15.0 Q306 LTA460WT-LH1 WXGA 1,366 x 768 1,018.1 x 572.5 0.746 S-PVA 16.7M 92 1,200:1 500 8 (G/G) LVDS (1 ch.) 1,083.0 x 627.0 x 50.0 10.0 Q306 NOTES: Viewing Angle (H/V): PVA-178/178, S-PVA-180/180 G/G - Gray to gray response time The specifications represent the main model of each product and are subject to change without prior notice. FULL-HD LCD TV / A.V. - 40", 46", 52", 57" 40", 46", 52", 57" Full-HD 40" Resolution Number of Pixels Active Area (mm) Pixel Pitch (mm) LTA400HS-L01 WUXGA 1,920 x 1,080 885.6 x 498.2 0.461 S-PVA 16.7M Color Gamut 72 Contrast Ratio 1,200:1 Brightness (cd/m2) 500 Response Time (ms at 25C) 8 (G/G) Interface LVDS (2 ch.) Outline Dimensions (mm) 952.0 x 551.0 x 53.5 Weight (kg) 12.5 Production Now Wide V/A Technology Number of Colors 46" 52" 57" LTA400HS-LH1 WUXGA 1,920 x 1,080 885.6 x 498.2 0.461 LTA460HS-LH3 WUXGA 1,920 x 1,080 1,018.1 x 572.7 0.530 LTA520HT-LH1 WUXGA 1,920 x 1,080 1,152.0 x 648.0 0.600 LTA570HS-L01 WUXGA 1,920 x 1,080 1,251.4 x 703.9 0.651 S-PVA 16.7M 92 1,200:1 450 8 (G/G) LVDS (2 ch.) 952.0 x 551.0 x 47.6 11.5 Now S-PVA 16.7M 92 1,200:1 500 6 (G/G) LVDS (2 ch.) 1,083.0 x 627.0 x 50.0 15.5 Q306 S-PVA 1.07B 92 1,000:1 500 8 (G/G) LVDS (2 ch.) 1,236.0 x 719.2 x 57.5 23.0 Q306 S-PVA 1.07B 72 1,200:1 500 8 (G/G) LVDS (2 ch.) 1,328.4 x 765.3 x 63.0 30.0 Now NOTES: Viewing Angle (H/V): PVA-178/178, S-PVA-180/180 G/G - Gray to gray response time The specifications represent the main model of each product and are subject to change without prior notice. SEPTEMBER 2006 BR-06-ALL-003 SAMSUNG SEMICONDUCTOR, INC. 5c TFT-LCD Mobile Phones MOBILE PHONE: MAIN DISPLAYS Specifications LTS166QQ-F0A LTS182QQ-F07 LTS190QC-F0N LTS200QC-F0V LTS220QC-F0H LTS200QV-F0E LTS222QV-F0Y LTP241QV-F02 Display Size (inch) 1.66 128xRGBx160 TMR 65K CPU 250 300:1 1.82 128xRGBx160 TMR 65K CPU 160 150:1 1.9 176xRGBx220 TMR 65K CPU 250 250:1 2 176xRGBx220 TMR 65K CPU 240 TBD 2.2 176xRGBx220 TMR 262K CPU 180 200:1 2 240xRGBx320 TMR 65K CPU 150 400:1 2.22 240xRGBx320 TMR 262K CPU 180 350:1 2.41 240xRGBx320 TMR 262K MDDI 300 400:1 Panel Power Consumption (mW) 10 10 14 TBD 25 42 22 TBD B/L Power Consumption (mW) 150 150 150 TBD wo BLU 256 280 TBD 26.3x32.9 32.1x42.4x2.5 28.9x36.0 34.0x46.7x3.5 30.1x37.6 35.9x47.8x2.2 31.7x39.6 38.2x51.3x2.5 30.2x40.3 35.4x49.8x2.4 33.8x45.1 39.8x56.9x2.8 36.7x48.9 42.6x59.3x2.25 Now Now Now Now Now Now Now Q4 06 34.8x43.6 39.3x67.3x1.52 (wo BLU) Now Now Now Now Now Q3 06 Q4 06 Q2 07 Resolution Display Mode Display Colors Interface Brightness (cd/m2) Contrast Ratio Active Area (mm) Module Dimensions (mm) Sample Status Mass Production NOTES: TMR: Transmissive with Micro-Reflectivity mWV: Mobile wide-view plus TSP: Touch-screen panel SLS: Single crystal like silicon Specifications represent the main model of each product and are subject to change without prior notice For More Information: http://www.samsung.com/Products/TFTLCD/common/product_list.aspx?family_cd=LCD03 MOBILE PHONE: MAIN + EXTERNAL DISPLAYS Specifications LTD222QV-F0E Main 2.22 240xRGBx320 TMR 65K 18 bit RGB 200 600:1 External 1.07 96xRGBx96 TMR 65K 8 bit CPU 110 600:1 Panel Power Consumption (mW) 37 8 B/L Power Consumption (mW) 342 - Active Area (mm) 33.8x45.1 12.3x19.3 40.5x57.3x5 Now Now Display Size (inch) Resolution Display Mode Display Colors Interface Brightness (cd//m2) Contrast Ratio Module Dimensions (mm) 40.5x57.3x5 Sample Status Mass Production Now Now NOTES: TMR: Transmissive with Micro-Reflectivity MHD: Mobile High Definition Specifications represent the main model of each product and are subject to change without prior notice. For More Information: http://www.samsung.com/Products/TFTLCD/common/product_list.aspx?family_cd=LCD03 6c SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-003 SEPTEMBER 2006 Information Displays TFT-LCD INFORMATION DISPLAY APPLICATIONS - 40", 46", 57", 82" LTI400WT-L01 40" Narrow Bezel Resolution WXGA Aspect Ratio 16:09 Number of Pixels 1,366 x 768 Active Area (mm) 885.2 X 497.7 Pixel Pitch (mm) 0.648 Mode S-PVA Number of Colors 16.7 M Color Gamut 72% Contrast Ratio (typ.) 1,200:1 Brightness (cd/m2) 700 Response Time (ms at 25C) 8 ms Viewing Angle (U/D/L/R) 89/89/89/89 Interface 1 Ch. LVDS Power Supply Voltage (V) 5v(Logic), 24v(BLU) Outline Dimensions (mm) 911.7 x 524.2 x 58.7 Weight (g) 12,600 Production Now NOTE: LTI460WT-L17 46" Narrow Bezel WXGA 16:09 1,366 x 768 1,018.1 x 572.7 0.745 S-PVA 16.7 M 72% 1,200:1 700 8 ms 89/89/89/89 1 Ch. LVDS 5v(Logic), 24v(BLU) 1,047.4 x 600.6 x 56.0 16,500 Now LTI460WT-L13 46" WXGA 16:09 1,366 x 768 1,018.1 x 572.7 0.745 S-PVA 16.7 M 72% 1,200:1 700 8 ms 89/89/89/89 1 Ch. LVDS 5v(Logic), 24v(BLU) 1,083 x 627 x 67.8 16,500 Now LTI400HS-L02 40" Full HD WXGA 16:09 1,920 x 1,080 885.2 X 497.7 0.648 S-PVA 16.7 M 72% 1,200:1 450 8 ms 89/89/89/89 2 Ch. LVDS 12v(Logic), 24v(BLU) 952.0 x 551.0 x 50.1 TBD October LTI460HS-L03 46" Full HD WXGA 16:09 1,920 x 1,080 1018.1 x 572.7 0.745 S-PVA 16.7 M 72% 1,200:1 500 8 ms 89/89/89/89 2 Ch. LVDS 12v(Logic), 24v(BLU) 1,083 x 627 x 56.5 TBD October LTI570HH-L01 57" WXGA 16:09 1,366 x 768 1,251.36 x 703.89 0.652 S-PVA 16.7 M 72% 1,200:1 600 8 ms 89/89/89/89 2 Ch. LVDS 12v(Logic), 24v(BLU) 1,328 x 764 x 63.5 TBD Oct./Nov. LTI820HS-L01 82" WXGA 16:09 1,366 x 768 1,805.76 x 1,015.74 0.941 S-PVA 16.7 M 72% 1,200:1 600 8 ms 89/89/89/89 LVDS / TMDS 12v(Logic), 24v(BLU) 1,875 x 1,080 X 84.1 TBD Nov./Dec. All monitors are 16:9 WXGA, high contrast, fast response time, high brightness SEPTEMBER 2006 BR-06-ALL-003 SAMSUNG SEMICONDUCTOR, INC. 7c TFT-LCD Digital Imaging DIGITAL IMAGING: ENTERTAINMENT DSC/DVC/Photo Printers/PMP/VoIP/Games/Other Specifications LTE182QQ-F03 LTE222QV-F01 LTV250QV-F01 LTV250QV-F02 LTV200WQ-F02 Application Display Size (inch) Resolution Display Mode Display Colors Interface Brightness (cd/m_) Contrast Ratio Panel Power Consumption B/L Power Consumption Active Area (mm) Module Dimensions (mm) MP3/DAB/DVB-H 1.82 128xRGBx160 TMR 65K CPU 250 250:1 150 26.3x32.9 34.9x45.7 MP4/DAB/DVB-H 2.22 320xRGBx240 TMR 262K CPU 190 400:1 45 165 44.64x33.84 55.96x40.04 MP5/DAB/DVB-H 2.50 320xRGBx240 TMR 16.7M 8bit RGB 220 300:1 40 200 50.88x38.04 56.98x47.94 MP6/DAB/DVB-H 2.50 320xRGBx240 TMR 262K 6bit RGB 220 300:1 40 200 50.88x38.04 56.98x47.94 DSC 2.00 480x240 TMR 16.7M 8bit RGB 190 250:1 25 115 40.84x30.48 47.24x41.08 Sample Status Mass Production Available MP Available MP Available MP Available MP Available MP Specifications LTV236WQ-F09 LTV250QV-F0A LTV300QV-F01 LTV300QV-C02 LTV300GV-B01 Application Display Size (inch) Resolution Display Mode Display Colors Interface Brightness (cd/m_) Contrast Ratio Panel Power Consumption B/L Power Consumption Active Area (mm) Module Dimensions (mm) Sample Status Mass Production DSC 2.36 480x234 TMR 16.7M CPU 240 200:1 25 150 48.05x35.92 55.20x47.50 Available MP DSC 2.50 960x240 TMR 16.7M CPU 250 250:1 (30) (160) 49.95x37.44 55.95x47.90 2006.12 2007.1Q DSC 3.00 960x242 mSWV+ 16.7M 8bit RGB 250 400:1 DSC 3.00 960x243 mSWV+ 16.7M 6bit RGB 300 500:1 DSC/PMP/VoIP 3.00 640xRGBx480 mSWV+ 16.7M 8bit RGB TBD TBD TBD 60.48x44.76 71.98x51.76 2006.12 2007.1Q TBD 60.94x49.32 69.56x51.52 2007.4 2007.2Q TBD 60.48x45.36 68.65x45.36 2006.12 2007.2Q NOTES: TMR: Transmissive with Micro-Reflectivity mSWV+:mobile Super Wide View (mPVA) Specifications represent the main model of each product and are subject to change without prior notice. 8c SAMSUNG SEMICONDUCTOR, INC. BR-06-ALL-003 SEPTEMBER 2006 Mobile AV TFT-LCD MOBILE AV Mini PCs/CNS/Car TVs/P-DVDs/Industrial Applications Specifications LTV350QV-F04 Display Size (inch) 3.50 Resolution 320xRGBx240 Display Mode TMR Display Colors 16.7M Interface 24 bit RGB I/F Brightness (cd/m2) 250 Contrast Ratio 300 Panel Power 400 Consumption B/L Power 150mW Consumption Light Source LED Storage Temperature 30~70 (C) Operation Temperature -20~70 (C) Active Area (mm) 70.08x52.56 Module Dimensions 76.90x63.90x3.15 (mm) Mass Production Now Remarks Now Specifications LTE430WQ-F07 Display Size (inch) 4.30 Resolution 480x272xRGB Display Mode TMR Display Colors 16.7M Interface 24 bit RGB I/F Brightness (cd/m2) 350 Contrast Ratio 400 Panel Power 80 Consumption B/L Power 480 Consumption Light Source LED Storage Temperature -30~70 (C) Operation Temperature --20~60 (C) Active Area (mm) 95.04x53.86 Module Dimensions 105.3x67.2x3.95 (mm) Mass Production Now Remarks Now LTV350QV-F0A LTV350QV-F0E LTV350QV-F0F LTV350QV-F0G LTE400WQ-F01 LTE400WQ-F02 LTE400WQ-E01 3.50 320xRGBx240 TMR 16.7M 24 bit RGB I/F 200 300 3.50 320xRGBx240 TMR 16.7M 24 bit RGB I/F 320 300 3.50 320xRGBx240 TMR 16.7M 24 bit RGB I/F 350 300 3.50 320xRGBx240 TMR 16.7M 24 bit RGB I/F 300 300 4.00 480x272xRGB TMR 16.7M 24 bit RGB I/F 250 400 4.00 480x272xRGB TMR 16.7M 24 bit RGB I/F 280 400 4.00 480x272xRGB Transflective 16.7M 24 bit RGB I/F 180 180 400 400 400 400 400 530 530 200mW TBD 200mW 200mW 400mW 390mW 3400mW LED LED LED LED LED LED LED -30~70 -30~70 -30~70 -30~70 -30~70 -30~70 -30~70 -20~70 -20~70 -20~70 -20~70 -20~60 -20~60 -20~60 70.08x52.56 70.08x52.56 70.08x52.56 70.08x52.56 87.84x49.78 87.84x49.78 87.84x49.78 76.90*63.90x4.25 76.90*63.90x4.25 76.90x63.90x3.15 76.90*63.90x4.25 98.3x62.6x3.8 98.3x62.6x4.85 98.3x62.6x4.85 Now Now Now Now Now 3Q '06 Now 3Q '06 Now Now Now Now Now Now LTE480WQ-F01 LTP500WV-F03 LTE700WQ-F05 LTP700WV-F01 LTP700WV-F02 LTA120W1-T02 4.80 480x272xRGB TMR 16.7M 24 bit RGB I/F 350 400 5.00 800xRGB*480 TMR 262K 18 bit RGB I/F 170 250 7.0 480x234xRGB TMR 16.7M 24 bit RGB I/F 450 500 7.0 800x480xRGB TMR 16.7M 24 bit RGB I/F 350 400 7.0 800x480xRGB TMR 16.7M 24 bit RGB I/F 350 400 12.0 800xRGBx480 Transmissive 262K 6 bit RGB 330 300 110 300 87 TBD TBD 957 480 888 3.8W TBD TBD 6.84W LED LED CCFL LED CCFL CCFL -30~70 -30~70 -20~70 -20 ~ 70 -20 ~ 70 -30~70 -20~60 -20~60 -10~60 -10 ~ 60 -10 ~ 60 0~70 105.84x59.98 109.2x65.52 154.08x86.58 152.4x91.44 152.4x91.44 265.8x149.52 114.24x72.88x3.2 122.4x79.0x3.75 166x100x5.7 163.2x104x3.4 165x104x5.4 283.1x171.4x13.0 Now 4Q '06 3Q '06 4Q '06 3Q '06 4Q '06 Now 4Q '06 Now Now Now Now NOTES: Specifications represent the main model of each product and are subject to change without prior notice. For More Information: http://www.samsung.com/Products/TFTLCD SEPTEMBER 2006 BR-06-ALL-003 SAMSUNG SEMICONDUCTOR, INC. 9c www.usa.samsungsemi.com Copyright 2006-08-22. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. All other names and brands may be claimed as the property of others. The appearance of all products, dates, figures, diagrams and tables are subject to change at any time, without notice. BR-06-ALL-003 Printed 8/06