RREECCTTRROONN
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4448
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
SILICON PLANAR ZENER DIODE
FEATURES
*Fast Switching Device(TRR<4.0nS)
*DO-35 Package (JEDEC)
*
*
*
*
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads
are readily solderable
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
MAX.
.165 (4.2)
1.02 (26.0)
MIN.
1.02 (26.0)
MIN.
.079 (2.0)
MAX. DIA.
.022 (0.56)
.018 (0.46)DIA.
ELECTRICAL CHARACTERISTICS
(@TA=25
OC unless otherwise noted)
2012-9
RATINGS
Maximum Forward Continuous Current
Non-Repetitive Peak Forward Surge Current
Maximum Power Dissipation
Operating and Storage Temperature Range
SYMBOL 1N4448
mAmps100
Maximum Average Forward Rectified Current mAmps150
1
500
4
-65 to + 200
Amps
mW
pF
4 nS
OC
UNITS
CHARACTERISTICS
Maximum Instantaneous Reverse Current
VF
SYMBOL
IR
UNITS
Maximum Instantaneous Forward Voltage
Volts
@V
R
=75V
@V
R
=20V
@IF=5mA
@IF=100mA
0.72
25
1.0
5 uAmps
nAmps
1N4448
IFM
IFSM
PD
TJ,TSTG
IO
CT
Trr
Typical Junction Capacitance(VR=0V,f=1MHz)
Typical Reverse Recovery Time(IF=IR=30mA,Irr=0.1XIR,RL=100Ω)
DO-35
Peak Reverse Voltage Vrm
Maximum DC Blocking Voltage VDc 70
100
Volts
Volts