Sb MUR160A - MUR190A 1.0 AMP. Glass Passivated High Efficient Rectifiers Pb) RoHS COMPLIANCE Features Designed for use in switching power supplies, inverters and as free wheeling diodes High efficiency, low VF High reliability Ultrafast recovery time for high efficiency 175C operating junction temperature Green compound with suffix G on packing code & marking Green compound with suffix G on packing code & prefix G on datecode. Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode High temperature soldering guaranteed: 260C /10 seconds/.375,(9.5mm) lead lengths at 5 Ibs.,(2.3kg) tension + Weight: 0.34 grams + $4944 $$ $44 DO-41 -107 (2.7 -080 (2.0) 10 4) DIA : _ | 768 62) | 1.0 (25.4) MIN. 034 (.86) 028 (71) 2> ja DIA. Dimensions in inches and (millimeters) Marking Diagram MUR1XXA= Specific Device Code G = Green Compound own Y = Year ww = Work Week Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MUR160A MUR190A Units Maximum Recurrent Peak Reverse Voltage VRRM 600 900 Vv Maximum RMS Voltage VRMS 420 630 Vv Maximum DC Blocking Voltage Vpc 600 900 Vv Maximum Average Forward Rectified Current @ T=80C IF(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load IFSM 35 A (JEDEC method ) Maximum Instantaneous Forward Voltage 1.05 15 @ 1.0A Tj=150C VF 495 17 Vv Tj=25 C : : Maximum DC Reverse Current at @ Ta=25C 5.0 uA Rated DC Blocking Voltage(Note 1) @ Ta=125C IR 150 UA Maximum Reverse Recovery Time ( Note 2 ) Trr 50 75 ns Typical Junction Capacitance ( Note 4) Cj 27 15 pF Typical Thermal Resistance (Note 3) Rea 50 C/W Operating Temperature Range Ty -65 to +175 C Storage Temperature Range TSTG -65 to +175 C Notes: 1. Pulse Test: Pulse Width = 300uS, Duty Cycle s1.0%. 2. Reverse Recovery Test Conditions: I-=0.5A, IR=1.0A, IRR=0.25A 3. Mounted on P.C. Board with 0.2 x 0.2 Copper Surface. 4. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. Version: B10 INSTANTANEOUS FORWARD CURRENT (A) JUNCTION CAPACITANCE (PF) Sb RATINGS AND CHARACTERISTIC CURVES (MUR160A THRU MUR190A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 2 9 RATED V, s Row = 50C/W 2 wi & ee | Sb ee S $3 0 50 200 100 150 250 T,, AMBIENT TEMPERATURE (C) FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS MUR160A = =e = MURI90A Tj = 100C of Tj = 25C 0.01 0 0.4 0.8 1.2 16 : 2.0 INSTANTANEOUS FORWARD VOLTAGE (V) FIG.5- TYPICAL JUNCTION CAPACITANCE 100 2.4 Tj= f = 1.0 MHz Vsig = 50m Vp-p a es (VIURIG0A =e = MURI90A 0.1 10 1 100 REVERSE VOLTAGE (V) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE LEAKAGE CURRENT FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 40 PN 30 20 10 NUMBER OF CYCLES AT 50 Hz FIG.4- TYPICAL TYPICAL REVERSE LEAKAGE CHARACTERISTICS Tj = 25C | I | | | 20 40 60 80 100 ERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 102 NONINDUCTIVE NONINDUCTIVE AMAR ANA Ww Ww y DUT 9 ) PULSE & 50Vde GENERATOR (approx) (NOTE 2) Oo 1a OSCILLOSCOPE (NOTE 1) @) . 3 < > NON INDUCTIVE] NOTES: 1. Rise Time=7ns max. Input Impedance= = 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms +0.5A b= + -0.25A, >| tomlser TIME BASE FOR 5/ 10ns/ cm Version: B10