
2SA1201
PNP Silicon
Power Transistors
Features
• With SOT-89 package
• Power amplifier applications
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage -120 V
VCBO Collector-Base Voltage -120 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current -800 mA
IB Base Current -160 mA
PC Collector power dissipation 500
1000(Note 1) W
TJ Junction Temperature 150 к
TSTG Storage Temperature -55 to +150 к
Note 1: Mounted on ceramic substrate (250mm2 x 0.8t)
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ. Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=-10mAdc, IB=0) -120 --- --- Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage*
(IE=-1mAdc, IC=0) -5 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=-120Vdc,IE=0) --- --- -0.1 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=-5.0Vdc, IC=0) --- --- -0.1 uAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=-0.1Adc, VCE=-5.0Vdc) (Note 2) 80 --- 240 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-0.5Adc, IB=-50mAdc) --- --- -1.0 Vdc
VBE Base-Emitter Voltage
(IC=-0.5Adc, VCE=-5.0Vdc) --- --- -1.0 Vdc
fT Transition Frequency
(IC=-0.1Adc, VCE=-5.0Vdc) --- 120 --- MHz
Cob Collector Output Capacitance
(VCB=-10V, IE=0, f=1MHz) --- --- 30 pF
A
B
C
D
G H
F
E
K
J
SOT-89
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
Revision: 4 2008/01/01
1
23
1.BASE
2.COLLECTOR
3.EMITTER
TM
Micro Commercial Components
CLASSIFICATION OF HFE (1)
Rank O
Range 80-160
Marking DO
Y
120-240
DY
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
www.mccsemi.com
1 of 3
2SA1201-O
2SA1201-Y