CM2400HC-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HC-34N IC ********************************************************** 2400 A VCES **************************************************** 1700 V Insulated Type 1-element in a Pack AlSiC baseplate Trench Gate IGBT : CSTBTTM Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Publication Date : Feb.2015 (HVM-1035-D) 1 < High Voltage Insulated Gate Bipolar TransistorHVIGBT > CM2400HC-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICRM IE IERM Ptot Viso Tj Tjop Tstg Item Collector-emitter voltage Gate-emitter voltage tpsc Short circuit pulse width Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Junction temperature Operating junction temperature Storage temperature Conditions VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C DC, Tc = 75C Pulse (Note 1) DC Pulse (Note 1) Tc = 25C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. Ratings 1700 20 2400 4800 2400 4800 13100 4000 -40 ~ +150 -40 ~ +125 -40 ~ +125 VCC = 1200V, VCE VCES, VGE =15V, Tj =125C Unit V V A A A A W V C C C 10 s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25C Tj = 125C Min -- -- 6.0 -- -- -- -- Limits Typ -- 6.0 7.0 -- 352 19.2 5.6 Max 8.0 16.0 8.0 0.5 -- -- -- Unit ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance VCE = 10 V, IC = 240 mA, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C QG Total gate charge VCC = 850V, IC = 2400A, VGE = 15V, Tj = 25C -- 24.5 -- VCEsat Collector-emitter saturation voltage IC = 2400 A (Note 4) VGE = 15 V Tj = 25C -- 2.15 2.80 Tj = 125C -- 2.40 -- td(on) Turn-on delay time -- 1.50 s Turn-on rise time VCC = 850 V, IC = 2400 A, VGE = 15 V RG(on) = 0.7 , Tj = 125C, Ls = 100 nH Inductive load -- tr -- -- 0.70 s -- 640 -- mJ VCC = 850 V, IC = 2400 A, VGE = 15 V RG(off) = 1.6 , Tj = 125C, Ls = 100 nH Inductive load -- -- 3.00 s -- -- 0.60 s -- 840 -- mJ Tj = 25C -- 2.60 3.30 Tj = 125C -- 2.30 -- -- -- 1.50 s -- 620 -- C -- 380 -- mJ VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25C (Note 5) Eon(10%) Turn-on switching energy td(off) Turn-off delay time tf Turn-off fall time Eoff(10%) Turn-off switching energy VEC Emitter-collector voltage trr Reverse recovery time (Note 2) Qrr Reverse recovery charge (Note 2) Erec(10%) Reverse recovery energy(Note 2), (Note 5) (Note 5) (Note 2) IE = 2400 A (Note 4) VGE = 0 V VCC = 850 V, IC = 2400 A, VGE = 15 V RG(on) = 0.7 , Tj = 125C, Ls = 100 nH Inductive load Publication Date : Feb.2015 2 mA V A nF nF nF C V V < High Voltage Insulated Gate Bipolar TransistorHVIGBT > CM2400HC-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules THERMAL CHARACTERISTICS Symbol Item Conditions Limits Typ -- -- Max 9.5 21.0 K/kW K/kW K/kW Rth(j-c)Q Rth(j-c)D Thermal resistance Junction to Case, IGBT part Junction to Case, FWDi part Min -- -- Rth(c-s) Contact thermal resistance Case to heat sink, grease = 1W/m*k, D(c-s) = 100m -- 8.0 -- Min 7.0 3.0 1.0 -- 600 19.5 32.0 -- -- Limits Typ -- -- -- 0.8 -- -- -- 16 0.14 Max 20.0 6.0 3.0 -- -- -- -- -- -- Unit MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC'+EE' Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part IGBT part , TC = 25C Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjopmax rating. Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Note 3. Junction temperature (Tj) should not exceed Tjmax rating (150C). Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Note 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. Publication Date : Feb.2015 3 Unit N*m N*m N*m kg -- mm mm nH m < High Voltage Insulated Gate Bipolar TransistorHVIGBT > CM2400HC-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 5000 5000 VCE = 20V Tj = 125C VGE = 20V 4000 VGE = 15V 3000 Collector Current [A] Collector Current [A] 4000 VGE = 12V VGE = 10V 2000 1000 Tj = 125C 3000 Tj = 25C 2000 1000 VGE = 8V 0 0 0 1 2 3 4 5 6 0 Collector - Emitter Voltage [V] 10 15 Gate - Emitter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5000 5000 VGE = 0V VGE = 15V 4000 4000 Tj = 25C Emitter Current [A] Collector Current [A] 5 3000 Tj = 125C 2000 1000 Tj = 125C 3000 Tj = 25C 2000 1000 0 0 0 1 2 3 4 0 Collector-Emitter Saturation Voltage [V] 1 2 3 Emitter-Collector Voltage [V] Publication Date : Feb.2015 4 4 < High Voltage Insulated Gate Bipolar TransistorHVIGBT > CM2400HC-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 10000 VCE = 850V, IC = 2400A Tj = 25C 15 Gate-Emitter Voltage [V] Capacitance [nF] 1000 Cies 100 Coes 10 Cres 10 5 0 -5 -10 VGE = 0V, Tj = 25C f = 100kHz 1 -15 0.1 1 10 100 0 10 Collector-Emitter Voltage [V] 30 40 Gate Charge [C] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 5000 3000 VCC = 850V, VGE = 15V RG(on) = 0.7, RG(off) = 1.6 LS = 100nH, Tj = 125C Inductive load VCC = 850V, IC = 2400A VGE = 15V, LS = 100nH Eoff(10%) Tj = 125C, Inductive load Switching Energies [mJ] 2500 Switching Energies [mJ] 20 2000 1500 Eon(10%) 1000 Eon(10%) 3000 Eoff(10%) 2000 1000 Erec(10%) 500 4000 Erec(10%) 0 0 0 1000 2000 3000 4000 5000 0 Collector Current [A] 2 4 6 8 Gate resistor [Ohm] Publication Date : Feb.2015 5 10 12 < High Voltage Insulated Gate Bipolar TransistorHVIGBT > CM2400HC-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES FREE-WHEEL DIODE REVERSE RECOVERY HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) CHARACTERISTICS (TYPICAL) 10 100 td(on) tf 0.1 tr 0.01 Irr 10 1000 trr 1 100 0.1 100 1000 10000 100 10 10000 1000 Collector Current [A] Emitter Current [A] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c)Q = 9.5K/kW Rth(j-c)D = 21.0K/kW 1 0.8 Z th( j - c ) (t ) = 0.2 0 0.001 0.01 0.1 1 10 Time [s] Publication Date : Feb.2015 6 R 1-exp i =1 0.6 0.4 i n - t i 1 2 3 4 Ri [K/kW] 0.0096 0.1893 0.4044 0.3967 ti [sec] 0.0001 0.0058 0.0602 0.3512 Reverse Recovery Current [A] VCC = 850V, VGE = 15V RG(on) = 0.7, LS = 100nH Tj = 125C, Inductive load Reverse Recovery Time [s] Switching Times [s] td(off) 1 10000 VCC = 850V, VGE = 15V RG(on) = 0.7, RG(off) = 1.6 LS = 100nH, Tj = 125C Inductive load < High Voltage Insulated Gate Bipolar TransistorHVIGBT > CM2400HC-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 25000 6000 VCC 1200V, VGE = 15V RG(on) 0.7, RG(off) 1.6 Tj = 125C, tpsc 10s VCC 1200V, VGE = 15V Tj = 125C, RG(off) 1.6 20000 Collector Current [A] Collector Current [A] 5000 4000 3000 2000 10000 5000 1000 0 0 0 500 1000 1500 0 2000 Collector-Emitter Voltage [V] 3000 VCC 1200V, di/dt 4700A/s Tj = 125C 2500 2000 1500 1000 500 0 0 500 1000 1500 500 1000 1500 Collector-Emitter Voltage [V] FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) Reverse Recovery Current [A] 15000 2000 Collector-Emitter Voltage [V] Publication Date : Feb.2015 7 2000 < High Voltage Insulated Gate Bipolar TransistorHVIGBT > CM2400HC-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Keep safety first in your circuit designs! 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(c) 2014 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Feb.2015 8