Publication Date : Feb.2015
(HVM-1035-D)
1
<High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM2400HC-34N
IC ·························································· 2400 A
VCES ···················································· 1700 V
Insulated T ype
1-element in a Pack
AlSiC baseplate
Trench Gate IGBT : CSTBTTM
Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC
choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : Feb.2015
2
ELECTRICAL
CHARACTERISTICS
Symbol Item Conditions
Limits
Unit
Min
Typ
ICES Collector cutoff current VCE = VCES, VGE = 0V
Tj = 25°C
—
—
mA
Tj = 125°C
—
6.0
VGE(th)
Gate-emitter t hreshold voltage
VCE = 10 V, IC = 240 mA, Tj = 25° C
6.0
7.0
V
IGES
Gate leakage current
VGE = VGES, VCE = 0V, Tj = 25°C
—
—
µA
Cies
Input capacitance
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
—
352
nF
Coes
Output capacitance
—
19.2
nF
Cres
Reverse transf er capacit ance
—
5.6
nF
QG
Total gate charge
VCC = 850V, IC = 2400A, VGE = ±15V, Tj = 25°C
—
24.5
µC
VCEsat Collector-emitter saturation voltage IC = 2400 A (Note 4)
VGE = 15 V
Tj = 25°C
—
2.15
V
T
j
= 125°C
—
2.40
td(on)
Turn-on delay time
VCC = 850 V, IC = 2400 A, VGE = ±15 V
RG(on) = 0.7 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
—
—
µs
tr
Turn-on rise time
—
—
µs
Eon(10%)
Turn-on switching energy (Note 5)
—
640
mJ
t
d(off)
Turn-off delay time
VCC = 850 V, IC = 2400 A, VGE = ±15 V
RG(off) = 1.6 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
—
—
µs
tf Turn-off fall time — — 0.60 µs
Eoff(10%)
Turn-off switching energy (Note 5)
—
840
mJ
VEC Emitter-collector voltage (Note 2) IE = 2400 A (Note 4)
VGE = 0 V
Tj = 25°C
—
2.60
V
Tj = 125°C
—
2.30
trr
Reverse recovery time
(Note 2)
VCC = 850 V, IC = 2400 A, VGE = ±15 V
RG(on) = 0.7 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
—
—
µs
Qrr
Reverse recovery charge (Note 2)
—
620
µC
Erec(10%)
Reverse recovery energy(Note 2), ( Note 5)
—
380
mJ
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
VCES
Collector-emitter voltage
VGE = 0V, Tj = 25°C
1700
V
VGES
Gate-emitter volt age
VCE = 0V, Tj = 25°C
± 20
V
IC
Collector current
DC, Tc = 75°C
2400
A
ICRM
Pulse (Not e 1)
4800
A
IE
Emitter current (Note 2)
DC
2400
A
IERM
Pulse (Not e 1)
4800
A
Ptot
Maximum power dissipation (Note 3)
Tc = 25°C, IGBT part
13100
W
Viso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1 min.
4000
V
Tj
Junction temperature
−40 ~ +150
°C
Tjop
Operating junction temperature
−40 ~ +125
°C
Tstg
Storage temperature
−40 ~ +125
°C
tpsc Short circuit pulse width VCC = 1200V, VCE ≤ VCES, VGE =15V, Tj =125°C 10 µs
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : Feb.2015
3
THERMAL CHARACTERISTICS
Symbol Item Conditions
Limits
Unit
Min
Typ
Max
Rth(j-c)Q
Thermal resistanc e
Junction to Case, IGBT part
—
—
9.5
K/kW
Rth(j-c)D
Junction to Case, FWDi part
—
—
21.0
K/kW
Rth(c-s) Contact thermal resistance Case to heat sink, λgrease = 1W/m
·
k, D(c-s) = 100µm — 8.0 — K/kW
MECHANICAL CHARACTERI S TICS
Symbol Item Conditions
Limits
Unit
Min
Typ
Max
Mt
Mounting torque
M8 : Main terminals screw
7.0
—
20.0
N·m
Ms
M6 : Mounting screw
3.0
—
6.0
N·m
Mt
M4 : Auxiliary terminals screw
1.0
—
3.0
N·m
m
Mass
—
0.8
—
kg
CTI
Comparati ve tracki ng index
600
—
—
—
da
Clearance
19.5
—
—
mm
ds
Creepage distanc e
32.0
—
—
mm
LP CE
Parasitic stray inductance
IGBT part
—
16
—
nH
RCC’+EE’
Internal lead resistance
IGBT part , TC = 25°C
—
0.14
—
mΩ
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjopmax rating.
Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FW D i).
Note 3. Junct i on tem p er at u re (Tj) should not exceed Tjmax rating (150°C).
Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt .
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : Feb.2015
4
PERFORMANCE CURVES
OUTPUT CHA RACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
0
1000
2000
3000
4000
5000
0 1 2 3 4 5 6
Collector Current [A]
Collector - Emitter Voltage [V]
VGE = 8V
VGE = 10V
Tj = 125°C
VGE = 12V
VGE = 15V
VGE = 20V
0
1000
2000
3000
4000
5000
0 5 10 15
Collector Current [A]
Gate - Emitter Voltage [V]
VCE = 20V
T
j
= 125°C
Tj = 25°C
0
1000
2000
3000
4000
5000
0 1 2 3 4
Collector Current [A]
Collector-Emitter Saturation Voltage [ V]
VGE = 15V
Tj = 125°C
Tj = 25°C
0
1000
2000
3000
4000
5000
0 1 2 3 4
Emitter Current [A]
Emitter-Collector Voltage [V]
VGE = 0V
Tj = 125°C
Tj = 25°C
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : Feb.2015
5
PERFORMANCE CURVES
C APAC ITAN CE CHARACTE RIS TICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1
10
100
1000
10000
0.1 1 10 100
Capacitance [nF]
Collector-Emitter Voltage [V]
Cies
VGE = 0V, Tj = 25°C
f = 100kHz
Coes
Cres
-15
-10
-5
0
5
10
15
20
0 10 20 30 40
Gate-Emitter Voltage [V]
Gate Charge [µC]
VCE = 850V, IC = 2400A
Tj = 25°C
0
500
1000
1500
2000
2500
3000
0 1000 2000 3000 4000 5000
Switching Ener gies [mJ]
Collector Current [A]
Erec(10%)
VCC = 850V, VGE = ±15V
RG(on) = 0.7Ω, RG(off) = 1.6Ω
LS = 100nH, Tj = 125°C
Inductive load
Eoff(10%)
Eon(10%)
0
1000
2000
3000
4000
5000
0 2 4 6 8 10 12
Switching Ener gies [mJ]
Gate resistor [Ohm]
Erec(10%)
VCC = 850V, IC = 2400A
VGE = ±15V, LS = 100nH
Tj = 125°C, Inductive load
Eon(10%)
Eoff(10%)
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : Feb.2015
6
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
=−
∑
−
=
−
exp1
RZ
i
t
n
1i i)cj(th
)t(
τ
1
2
3
4
Ri [K/kW]
0.0096 0.1893 0.4044 0.3967
ti [sec]
0.0001 0.0058 0.0602 0.3512
0.01
0.1
1
10
100 1000 10000
Switching T imes [µs]
Collector Current [A]
VCC = 850V, VGE = ±15V
RG(on) = 0.7Ω, RG(off) = 1.6Ω
LS = 100nH, Tj = 125°C
Inductive load
tr
td(on)
td(off)
tf
10
100
1000
10000
0.1
1
10
100
100 1000 10000
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
Emitter Current [A]
trr
Irr
VCC = 850V, VGE = ±15V
RG(on) = 0.7Ω, LS = 100nH
Tj = 125°C, Inductive load
0
0.2
0.4
0.6
0.8
1
1.2
0.001 0.01 0.1 1 10
Normalized T ransient Thermal impedance
Time [ s]
Rth(j-c)Q = 9.5K/kW
Rth(j-c)D = 21.0K/kW
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : Feb.2015
7
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
SHORT CIRCUIT SAFE OPERATING AREA
(SCSOA)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
0
1000
2000
3000
4000
5000
6000
0 500 1000 1500 2000
Collector Current [A]
Collector-Emitter Voltage [V]
VCC ≤ 1200V, VGE = ±15V
Tj = 125°C, RG(off) ≥ 1.6Ω
0
5000
10000
15000
20000
25000
0 500 1000 1500 2000
Collector Current [A]
Collector-Emitter Voltage [V]
VCC ≤ 1200V , VGE = ±15V
RG(on) ≥ 0.7Ω, RG(off) ≥ 1.6Ω
Tj = 125°C, tpsc ≤ 10µs
0
500
1000
1500
2000
2500
3000
0 500 1000 1500 2000
Reverse Recov er y Curr ent [A ]
Collector-Emitter Voltage [V]
VCC ≤ 1200V, di/dt ≤ 4700A/µs
Tj = 125°C
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : Feb.2015
8
Notes r e gar ding these mat er ials
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