TIP35C, 36C
Complementary Power Transistors
Page 1 31/05/05 V1.0
Designed for use in general purpose power amplifier and switching
applications.
Features:
••Collector-Emitter Sustaining Voltage
VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C
••DC Current Gain hFE = 25 (Minimum) at IC= 1.5A.
••Current Gain-Bandwidth Product fT= 3.0MHz (Minimum) at IC= 1.0A.
Dimensions Minimum Maximum
A 20.63 22.38
B 15.38 16.20
C 1.90 2.70
D 5.10 6.10
E 14.81 15.22
F 11.72 12.84
G 4.20 4.50
H 1.82 2.46
I 2.92 3.23
J 0.89 1.53
K 5.26 5.66
L 18.50 21.50
M 4.68 5.36
N 2.40 2.80
O 3.25 3.65
P 0.55 0.70
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEO 100 VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous
-Peak IC25
40 A
Base Current IB5.0
Total Power Dissipation at Tc= 25°C
Derate above 25°C PD125
1.0
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
Maximum Ratings
Dimensions : Millimetres
Pin 1. Base
2. Collector
3. Emitter
NPN PNP
TIP35C TIP36C
25 Ampere
Complementary Silicon
Power Transistors
100 Volts
125 Watts
TO-247(3P)
TIP35C, 36C
Complementary Power Transistors
Page 2 31/05/05 V1.0
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 30mA, IB= 0) VCEO(SUS) 100 - V
Collector Cut off Current
(VCE = 60V, IB = 0) ICEO - 1.0
mA
Collector Cut off Current
(VCE = 100V, VEB = 0) ICES - 0.7
Emitter Cut off Current
(VEB = 5.0V, IC= 0) IEBO - 1.0
ON Characteristics (1)
DC Current Gain
(IC= 1.5A, VCE = 4.0V)
(IC= 15A, VCE = 4.0V)
hFE 25
15 75
V
Collector-Emitter Saturation Voltage
(IC= 15A, IB= 1.5A)
(IC= 25A, IB= 5.0A)
VCE(sat) - 1.8
4.0
Base-Emitter On Voltage
(IC= 15A, VCE = 4.0V)
(IC= 25A, VCE = 4.0V)
VBE(on) - 2.0
4.0
Dynamic Characteristics
Current Gain Bandwidth Product (2)
(IC= 1.0mA, VCE = 10V, fTEST = 1MHz) fT3.0 - MHz
Small-Signal Current Gain
(IC= 1.0A, VCE = 10V, f = 1kHz) hfe 25 - -
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.0 °C/W
Figure - 1 Power Derating
TC, Temperature (°C)
PD, Power Dissipation (Watts)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%
(2) fT=hfe• ftest
TIP35C, 36C
Complementary Power Transistors
Page 3 31/05/05 V1.0
Figure - 2 DC Current Gain
IC, Collector Current (AMP)
hFE, DC Current Gain
Figure - 3 Turn-Off Time
t, Time (µs)
Figure - 4 Turn-On time Figure - 5 Reverse Base Safe Operating Area
VCE, Collector Emitter (Volts)
ICCollector Current (AMP)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown
safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure - 6 is based on TC= 25°C; TJ(pk) is variable
depending on power level . Second breakdown pulse limits are
valid for duty cycle to 10% but must be derated when TC ≥25°C,
second breakdown limitations do not derate the same as
thermal limitation.
IC, Collector Current (AMP)
t, Time (µs)
IC, Collector Current (AMP)
Figure - 6 Active Region Safe Operating Area
VCE, Collector Emitter (Volts)
IC, Collector Current (AMP)
TIP35C, 36C
Complementary Power Transistors
Page 4 31/05/05 V1.0
IC(av)
maximum
(A)
VCEO
maximum
(V)
hFE
minimum
at IC= 15A
Ptot
at 25°C
(W)
Package Type Part Number
25 100 15 125 TO-247
NPN TIP35C
PNP TIP36C
Specifiations
For enquiries from all other markets
TIP35C, 36C
Complementary Power Transistors
Page 5 31/05/05 V1.0
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