TIP33B - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 " 

!  

. . . for general–purpose power amplifier and switching applications.

•10 A Collector Current

•Low Leakage Current — ICEO = 0.7 mA @ 60 V

•Excellent dc Gain — hFE = 40 Typ @ 3.0 A

•High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

TIP33B

TIP34B

ÎÎÎÎ

TIP33C

TIP34C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

80 V

ÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

80 V

ÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak (1)

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎ

ÎÎÎÎÎÎÎ

3.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.64

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎ

1.56

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Junction–To–Free–Air Thermal Resistance

ÎÎÎÎ

RθJA

ÎÎÎÎÎÎÎ

35.7

ÎÎÎ

C/W

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

10%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (A)

0.1 1.0

5.0

100

500

hFE, DC CURRENT GAIN

200

NPN

PNP

VCE = 4.0 V

TJ = 25

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP33B/D

 Motorola, Inc. 1995









10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

80 WATTS

*Motorola Preferred Device









CASE 340D–01

TO–218AC

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mA, IB = 0) TIP33B, TIP34B

TIP33C, TIP34C

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = 60 V, IB = 0) TIP33B, TIP33C, TIP34B, TIP34C

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.7

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

0.4

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Cutoff Current

(VEB = 5.0 V, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.0 A, VCE = 4.0 V)

(IC = 3.0 A, VCE = 4.0 V)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

100

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3.0 A, IB = 0.3 A)

(IC = 10 A, IB = 2.5 A)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 3.0 A, VCE = 4.0 V)

(IC = 10 A, VCE = 4.0 V)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.6

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2.0%.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10 201.0 50 100

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

1.0

0.1

2.0 SECONDARY BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT

1.0 ms

300

5.0

3.0

IC, COLLECTOR CURRENT (AMPS)

10 ms

0.2

0.5

2.0 3.0 5.0 7.0 30 70

TC = 25

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

600 80 100

Figure 3. Maximum Rated Forward Bias

Safe Operating Area

IC, COLLECTOR CURRENT (AMPS)

5.0

20 40

TIP33B

TIP34B

TIP33C

TIP34C

TIP33B

TIP34B

TIP33C

TIP34C

L = 200

IC/IB

≥

5.0

VBE(off) = 0 to 5.0 V

TC = 100

FORWARD BIAS

The Forward Bias Safe Operating Area represents the

voltage and current conditions these devices can withstand

during forward bias. The data is based on TC = 25

C; TJ(pk)

is variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10%, and must be der-

ated thermally for TC > 25

REVERSE BIAS

The Reverse Bias Safe Operating Area represents the

voltage and current conditions these devices can withstand

during reverse biased turn–off. This rating is verified under

clamped conditions so the device is never subjected to an

avalanche mode.

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 340D–01

TO–218AC

ISSUE A

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

BQEC

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A19.00 19.60 0.749 0.771

B14.00 14.50 0.551 0.570

C4.20 4.70 0.165 0.185

D1.00 1.30 0.040 0.051

E1.45 1.65 0.058 0.064

G5.21 5.72 0.206 0.225

H2.60 3.00 0.103 0.118

J0.40 0.60 0.016 0.023

K28.50 32.00 1.123 1.259

L14.70 15.30 0.579 0.602

Q4.00 4.25 0.158 0.167

S17.50 18.10 0.689 0.712

U3.40 3.80 0.134 0.149

V1.50 2.00 0.060 0.078

1 2 3

   

4 Motorola Bipolar Power Transistor Device Data

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TIP33B/D

*TIP33B/D*

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