Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
QM300DY-24B
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
114
6.5MIN.
38
LABEL
27 25 21.5
M8
66
7
B2X B1X
18
14 14
2–M6
114
93± 0.3
6
21
156
5.58
4–φ6.5
E 2B 2B 1E 1
93±0.3
C2E1
E2 C1
4.75(t=0.8) 25 20 20
5 5
2.8(t=0.5)
1
9.5
37.5
21
(7)
31MAX.
E2
B2X
E2
B2
C2E1
B1
E1
B1X
C1
• ICCollector current ........................ 300A
• VCEX Collector-emitter voltage ......... 1200V
• hFE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
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Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M8
Main terminal screw M6
Mounting screw M6
Typical value
Ratings
1200
1200
1200
7
300
300
1980
16
3000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~2.94
20~30
1.96~2.94
20~30
1100
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=1200V, VEB=2V
VCB=1200V, Emitter open
VEB=7V, Collector open
IC=300A, IB=400mA
IC=–300A (diode forward voltage)
IC=300A, VCE=4.0V
VCC=600V, IC=300A, IB1=0.6A, –IB2=6.0A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
200
4.0
4.0
1.8
—
2.5
15
3.0
0.063
0.3
0.04
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Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I C (A)
DC CURRENT GAIN h FE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT I B (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE V CE (sat) (V)
SATURATION VOLTAGE V CE (sat), V BE (sat) (V)SWITCHING TIME t on, t s, t f (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM300DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
2
10
1
10
0
10
–1
10
0
10
1
10
–1
10
–2
10
–1
10
–1
10
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
T
j
=25°C
T
j
=125°C
V
CE
=4V
2.8 4.84.44.03.63.2
1
10
7
5
4
3
2
7
5
4
3
T
j
=25°C
V
CE
=4.0V
0
10
2
500
400
300
200
100
0 0 1 2 3 4 5
T
j
=25°C
I
B
=200mA
I
B
=100mA
I
B
=400mA
I
B
=50mA
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
T
j
=25°C
T
j
=125°C
I
B
=400mA
V
BE(sat)
V
CE(sat)
75
32
75
3
2
7
5
32
1
10
2 3 4 5 7 2 3 4 5 7
3
10
t
s
t
on
t
f
I
B1
=0.6A
V
CC
=600V
–I
B2
=6.0A
2
10
T
j
=25°C
T
j
=125°C
75327532
5
4
3
2
1
0
32 75
Tj=25°C
Tj=125°C
I
C
=200A
I
C
=300A
I
C
=100A
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Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME t s, t f (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
DERATING FACTOR (%) COLLECTOR REVERSE CURRENT –I C (A)
MITSUBISHI TRANSISTOR MODULES
QM300DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Z th (j–c) (°C/ W)
–3
10 –1
10
–2
10
–1
10
0
10
1
10
2
10
100
80
60
40
20
0 0 20 60 100 120 16040 80 140
10
30
50
70
90
600
100
0 0 400 800 1200200 600 1000
300
400
200
500
Tj=125°C
IB2=–6A
75
32
75
3
2
7
5
32
0
10 2 3 4 5 7 2 3 4 5 7 2
10
1
10
Tj=25°C
Tj=125°C
IB1=0.6A
VCC=600V
I C=300A
ts
tf
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0.2 2.21.81.41.00.6
Tj=25°C
Tj=125°C
1
10
753275327532
0.08
0
7532 1
10
0
10
0
10
0.07
0.06
0.05
0.04
0.03
0.02
0.01
753275327532
75
32
75
3
2
7
5
32TC=25°C
2
10 3
10
1
10
0
10
3
10
2
10
1
10
0
10
1ms
50µs
DC
100µs
200µs
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
NON-REPETITIVE
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Feb.1999
I rr (A), Q rr (µc)
SURGE COLLECTOR REVERSE CURRENT
–I CSM (A)
t rr (µs)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE PART)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
Z th (j–c) (°C/ W)
MITSUBISHI TRANSISTOR MODULES
QM300DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
753275327532
0.40
0.32
0.24
0.16
0.08
0
7532
1
10
0
10
0
10
–3
10
–2
10
–1
10
2 7534
7
54
3
2
7
54
3
2
–1
10
2 3 4
1
10
5 7
2
10
2 3 4
7
54
3
2
7
54
3
2
0
10
1
10
1
10
2
10
3
10
5 7
3
10
T
j
=25°C
T
j
=125°C
t
rr
I
rr
Q
rr
V
CC
=600V
I
B1
=0.6A
–I
B2
=6.0A
1
10 7532
0
10 75432
0
400
1200
2000
2800
3200
2
10 4
1600
800
2400
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