THYRISTOR MODULE
Maximum Ratings
Parameter Conditions Max Rated
Value Unit
Tc=98°C(Non-Bias)
Average Rectified Output Current IO(AV) 3 Phase Full
Wave Rectified Tc=73°C(Biased) 100 A
Operating JunctionTemperature Range Tjw Tj>125°C, Can not be Biased for Thyristor. -40 to +150 °C
Storage Temperature Range Tstg -40 to +125 °C
Isoration Voltage Viso Base Plate to Terminals, AC1min 2000 V
Case mounting Greased M5 Screw 2.4 to 2.8
Mounting torque Terminals Ftor M5 Screw 2.4 to 2.8 N•m
Thermal Characteristics
Characteristics Symbol Test Conditions Maximum Value. Unit
Thermal Resistance Rth(c-f) Case to Fin,Total,Greased 0.06 °C/W
Maximum Ratings
Grade
Parameter Symbol PGH1008AM Unit
Repetitive Peak Reverse Voltage *1 VRRM 800
Non Repetitive Peak Reverse Voltage *1 VRSM 900 V
Parameter Symbol Conditions Max Rated
Value Unit
Surge Forward Current *1 IFSM 50 Hz Half Sine Wave,1Pulse,
Non-Repetitive 1200 A
I Squared t *1 I2t 2msec to 10msec 7200 A2s
Allowable Operating Frequancy f 400 Hz
*1 Value Per 1 Arm
FEATURES
* Isolated Base
* 3 Phase Converter with Rush-Current
Controllable Thyristor
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Converter For UPS , VVVF and Servo
Motor Drive Amplifier
PGH1008AM
PGH1008AM PGH1008AM
PGH1008AM
OUTLIN E DRAWING
100A / 800V
Pert of Diode Brid
g
e and Th
y
ristor
Part of Diode Brid
g
e (6 dies)
Nut
A
pprox Net Weight:200g
Electrical • Thermal Characteristics
Characteristics Symbol Test Conditions Maximum Value. Unit
Peak Reverse Current *1 IRM VRM= VRRM, Tj= 125°C 15 mA
Peak Forward Voltage *1 VFM IFM= 100A, Tj=25°C 1.16 V
Thermal Resistance Rth(j-c) Junction to Case (Total) 0.24 °C/W
*1 Value Per 1 Arm
Maximum Ratings
Grade
Parameter Symbol PGH1008AM Unit
Repetitive Peak Off-State Voltage VDRM 800
Non Repetitive Peak Off-State Voltage VDSM 900 V
Repetitive Peak Reverse Voltage VRRM 800
Non Repetitive Peak Reverse Voltage VRSM 900 V
Parameter Conditions Max Rated
Value Unit
Surge On-State Current ITSM 50 Hz Half Sine Wave,1Pulse
Non-Repetitive 2000 A
I Squared t I2t 2msec to 10msec 20000 A2s
Critical Rate of Turned-On Current di/dt VD=2/3VDRM, ITM=2•IO, Tj=125°C
IG=200mA, diG/dt=0.2A/µs 100 A/µs
Peak Gate Power PGM 5 W
Average Gate Power PG(AV) 1 W
Peak Gate Current IGM 2 A
Peak Gate Voltage VGM 10 V
Peak Gate Reverse Voltage VRGM 5 V
Electrical • Thermal Characteristics
Maximum Value.
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Peak Off-State Current IDM VDM= VDRM, Tj= 125°C 20 mA
Peak Reverse Current IRM VRM= VRRM, Tj= 125°C 20 mA
Peak On-State Voltage VTM ITM= 100A, Tj=25°C 1.13 V
Tj=-40°C 200
Tj=25°C 100
Gate Current to Trigger I GT V
D=6V,IT=1A Tj=125°C 50 mA
Tj=-40°C 4
Tj=25°C 2.5
Gate Voltage to Trigger V GT V
D=6V,IT=1A Tj=125°C 2
V
Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125°C 0.25 V
Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125°C 500 V/µs
Turn-Off Time t q ITM=IO,VD=2/3VDRM
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj= 12 5°C 150 µs
Turn-On Time tgt 6 µs
Delay Time t d 2 µs
Rise Time t r
VD=2/3VDRM Tj=125°C
IG=200mA, diG/dt=0.2A/µs 4 µs
Latching Current I L Tj=25°C 100 mA
Holding Current I H Tj=25°C 80
Thermal Resistance Rth(j-c) Junction to Case 0.5 °C/W
Part of Th
y
ristor (1 die)
PGH1008AM OUTLINE DRAWING (Dimensions in mm)
Nut
