DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V ID25 Tc = 25C 9.0 A IDM Tc = 25C, pulse width limited by TJM 54 A IAR Tc = 25C 14 A EAR Tc = 25C 7.5 mJ IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 5.5 V/ns dv/dt >200 V/ns 200 W 80 W 3.5 W RthJC 0.74 C/W RthJHS 1.50 C/W IS = 0 PDC PDHS Tc = 25C Derate 4.4W/C above 25C PDAMB Tc = 25C Symbol Test Conditions VDSS VGS = 0 V, ID = 3 ma 100 VGS(th) VDS = VGS, ID = 4 ma 2 SG1 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test 4.6 V 100 nA 25 250 A A 0.16 S +175 -55 Tstg Weight 4 175 TJM TL max. 8.0 -55 TJ 1.6mm(0.063 in) from case for 10 s ID25 = 9.0 A RDS(on) = 0.16 PDC = 200 W SG2 SD1 SD2 Features V 3 100 V GATE TJ = 25C unless otherwise specified typ. = DRAIN Characteristic Values min. VDSS +175 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages C * Optimized for RF and high speed C * Easy to mount--no insulators needed * High power density C 300 C 2 g switching at frequencies to >100MHz DE150-101N09A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz 800 pF 200 pF 30 pF 16 pF 4 ns 4 ns 4 ns 4 ns Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) 5 RG VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Toff 12 35 nC 2.5 10 nC Qgd 5.0 15 nC Source-Drain Diode Characteristic Values (TJ = 25C unless otherwise specified) Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% typ. max. 9.0 A 54 A 1.5 V 300 Trr ns For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on IXYS RF's web site at www.ixysrf.com/Technical_Support/App_notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE150-101N09A RF Power MOSFET 10000 Ciss Capacitance in pF Coss Crss 1000 100 10 0 10 20 30 40 50 60 Vds in Volts Capacitances vs Vds 70 80 90 100 DE150-101N09A RF Power MOSFET 201N09A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: *SYM=POWMOSN .SUBCKT 101N09A 10 20 30 * TERMINALS: D G S * 100 Volt 9 Amp .16 ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 .6N RD 4 1 .16 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=500 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=500 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0242 Rev 3 (c) 2003 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com