DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGM1012 MMIC wideband amplifier Product specification Supersedes data of 2002 May 16 2002 Sep 06 NXP Semiconductors Product specification MMIC wideband amplifier BGM1012 FEATURES PINNING Internally matched to 50 PIN Very wide frequency range (4 GHz at 3 dB bandwidth) DESCRIPTION 1 Very flat 20 dB gain (DC to 2.9 GHz at 1 dB flatness) VS 2, 5 GND2 10 dBm saturated output power at 1 GHz 3 RF out High linearity (18 dBm IP3(out) at 1 GHz) 4 GND1 6 RF in Low current (14.6 mA) Unconditionally stable. APPLICATIONS 6 5 4 1 LNB IF amplifiers Cable systems 6 3 ISM General purpose. 1 2 Top view DESCRIPTION 4 3 2, 5 MAM455 Marking code: C2-. Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VS DC supply voltage 3 4 V IS DC supply current 14.6 mA s212 insertion power gain f = 1 GHz 20.1 dB NF noise figure f = 1 GHz 4.8 dB PL(sat) saturated load power f = 1 GHz 9.7 dBm CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2002 Sep 06 2 NXP Semiconductors Product specification MMIC wideband amplifier BGM1012 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VS DC supply voltage IS supply current Ptot total power dissipation Tstg storage temperature Tj operating junction temperature PD maximum drive power CONDITIONS RF input AC coupled Ts 90 C MIN. MAX. UNIT 4 V 50 mA 200 mW 65 +150 C 150 C 10 dBm THERMAL CHARACTERISTICS SYMBOL Rth j-s 2002 Sep 06 PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 200 mW; Ts 90 C 3 VALUE UNIT 300 K/W NXP Semiconductors Product specification MMIC wideband amplifier BGM1012 CHARACTERISTICS VS = 3 V; IS = 14.6 mA; Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER IS supply current s212 insertion power gain RL IN RL OUT s122 NF return losses input return losses output isolation noise figure BW bandwidth K stability factor CONDITIONS MIN. TYP. MAX. UNIT 11 14.6 19 mA f = 100 MHz 19 19.5 20 dB f = 1 GHz 19 20.1 21 dB f = 1.8 GHz 19 20.4 21 dB f = 2.2 GHz 19 20.4 22 dB f = 2.6 GHz 18 19.9 21 dB f = 3 GHz 16 18.7 20 dB f = 1 GHz 9 11 dB f = 2.2 GHz 13 15 dB f = 1 GHz 11 14 dB f = 2.2 GHz 10 13 dB f = 1 GHz 30 33 dB f = 2.2 GHz 35 38 dB f = 1 GHz 4.8 5.1 dB f = 2.2 GHz 4.9 5.3 dB 3.6 GHz at s212 3 dB below flat gain at 1 GHz 3.1 f = 1 GHz 1.5 2.1 f = 2.2 GHz 3 3.4 8 9.7 dBm PL(sat) saturated load power f = 1 GHz f = 2.2 GHz 3.5 5.6 dBm PL 1 dB load power at 1 dB gain compression; f = 1 GHz 4 6.0 dBm at 1 dB gain compression; f = 2.2 GHz 1.5 3.4 dBm IP3(in) IP3(out) 2002 Sep 06 input intercept point output intercept point f = 1 GHz 4 2 dBm f = 2.2 GHz 9 7 dBm f = 1 GHz 16 18 dBm f = 2.2 GHz 11 13 dBm 4 NXP Semiconductors Product specification MMIC wideband amplifier BGM1012 APPLICATION INFORMATION In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. Figure 2 shows a typical application circuit for the BGM1012 MMIC. The device is internally matched to 50 , and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. DC-block handbook, halfpage DC-block 100 pF 100 pF The nominal value of the RF choke L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 220 nH. At frequencies above 1 GHz a much lower value (e.g. 10 nH) can be used to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen. DC-block 100 pF input output MGU437 Fig.3 Easy cascading application circuit. Both the RF choke L1 and the 22 nF supply decoupling capacitor C1 should be located as closely as possible to the MMIC. mixer handbook, halfpage from RF circuit Separate paths must be used for the ground planes of the ground pins GND1 and GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. to IF circuit or demodulator wideband amplifier MGU438 oscillator Fig.4 Application as IF amplifier. Vshalfpage handbook, C1 L1 Vs RF in RF input RF out C2 RF output GND1 GND2 mixer handbook, halfpage C3 to IF circuit or demodulator antenna MGU436 LNA wideband amplifier MGU439 oscillator Fig.2 Typical application circuit. Fig.5 Application as RF amplifier. Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2. from modulation or IF circuit The excellent wideband characteristics of the MMIC make it an ideal building block in IF amplifier applications such as LBNs (see Fig.4). to power amplifier wideband amplifier MGU440 oscillator As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5). 2002 Sep 06 mixer handbook, halfpage Fig.6 Application as driver amplifier. 5 NXP Semiconductors Product specification MMIC wideband amplifier BGM1012 90 handbook, full pagewidth 1.0 +1 135 0.8 45 +2 +0.5 0.6 +0.2 0.2 0 0.2 100 MHz 2 4 GHz 180 0.4 +5 0.5 5 0 0 -5 -0.2 -0.5 -2 -135 -45 -1 MLD910 1.0 -90 IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Fig.7 Input reflection coefficient (s11); typical values. 90 handbook, full pagewidth 1.0 +1 135 0.8 45 +2 +0.5 0.6 +0.2 0.4 +5 100 MHz 180 0.2 0 0.5 1 0.2 2 5 0 0 4 GHz -5 -0.2 -0.5 -2 -135 -45 -1 MLD911 -90 IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Fig.8 Output reflection coefficient (s22); typical values. 2002 Sep 06 6 1.0 NXP Semiconductors Product specification MMIC wideband amplifier BGM1012 MLD912 0 MLD913 25 handbook, halfpage s 2 handbook, halfpage 12 (dB) -10 s21 2 (dB) 20 (1) -20 (2) (3) -30 15 -40 -50 10 0 1000 2000 3000 4000 0 1000 2000 3000 f (MHz) Isolation (s122) as a function of frequency; typical values. Fig.10 Insertion gain (s212) as a function of frequency; typical values. MLD914 20 MLD915 20 handbook, halfpage handbook, halfpage PL (dBm) PL (dBm) 10 4000 PD = 30 dBm; ZO = 50 (1) IS = 18.7 mA; VS = 3.3 V. (2) IS = 14.6 mA; VS = 3 V. (3) IS = 10.6 mA; VS = 2.7 V. IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Fig.9 f (MHz) 10 (1) (1) (2) (3) (3) 0 0 -10 -10 -20 -40 -30 -20 -10 PD (dBm) -20 -40 0 -30 -20 -10 (2) PD (dBm) 0 f = 1 GHz; ZO = 50 (1) VS = 3.3 V. (2) VS = 3 V. (3) VS = 2.7 V. f = 2.2 GHz; ZO = 50 (1) VS = 3.3 V. (2) VS = 3 V. (3) VS = 2.7 V. Fig.11 Load power as a function of drive power at 1 GHz; typical values. Fig.12 Load power as a function of drive power at 2.2 GHz; typical values. 2002 Sep 06 7 NXP Semiconductors Product specification MMIC wideband amplifier BGM1012 MLD916 5.5 MLD917 12 handbook, halfpage handbook, halfpage NF (dB) K 5.3 8 5.1 4.9 (1) (3) 4 (2) 4.7 0 4.5 0 1000 2000 f (MHz) 3000 0 ZO = 50 (1) IS = 10.6 mA; VS = 2.7 V. (2) IS = 14.6 mA; VS = 3 V. (3) IS = 18.7 mA; VS = 3.3 V. 2000 3000 4000 f (MHz) IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Fig.13 Noise figure as a function of frequency; typical values. 2002 Sep 06 1000 Fig.14 Stability factor as a function of frequency; typical values. 8 s21 s12 s22 KFACTOR MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 100 0.25122 14.607 9.33681 12.018 0.032124 16.445 0.26458 64.156 1.6 200 0.27070 2.759 9.42458 5.676 0.028303 6.37 0.20645 64.153 1.8 400 0.27979 7.969 9.63627 8.447 0.026297 4.545 0.1543 52.558 1.9 600 0.28323 14.78 9.76543 19.02 0.024833 10.24 0.15203 39.347 1.9 9 800 0.28557 20.13 9.93782 27.93 0.023234 14.62 0.16867 27.926 2.0 1000 0.28673 24.14 10.03633 36.88 0.021523 17.42 0.19196 19.293 2.1 1200 0.28517 27.57 10.11638 46.47 0.019830 19.83 0.21421 12.703 2.2 1400 0.27902 29.93 10.26450 56.05 0.018230 21.14 0.23292 7.154 2.4 1600 0.26682 31.81 10.40572 65.76 0.016902 21.62 0.24605 2.582 2.5 1800 0.24746 33.12 10.44088 76.97 0.015759 22.32 0.25113 1.26 2.7 2000 0.21894 33.8 10.46224 88.33 0.014310 22.64 0.24367 4.817 3.0 2200 0.18164 32.67 10.45202 100.3 0.013012 23.13 0.22184 7.573 3.4 2400 0.14000 26.75 10.34342 112.6 0.011826 23.27 0.18787 8.489 3.9 2600 0.10418 10.16 9.87989 122.9 0.010171 23.23 0.13049 4.601 4.9 2800 0.09469 15.051 9.20393 129.5 0.008664 16.9 0.1294 9.578 6.2 3000 0.10595 33.415 8.68177 135.4 0.007541 9.957 0.1127 18.402 7.5 3200 0.11609 42.888 8.18809 142.2 0.006655 0.835 0.092234 23.406 9.0 3400 0.10827 50.017 7.93039 151.5 0.006042 12.444 0.059268 26.453 10.3 3600 0.09866 60.967 7.77538 162.2 0.006205 29.297 0.015829 38.211 10.3 3800 0.08693 80.355 7.33775 172.6 0.007039 40.351 0.028159 152.8 9.6 4000 0.10090 102.07 6.90878 177.1 0.008241 46.053 0.075298 133.1 8.7 NXP Semiconductors s11 f (MHz) MMIC wideband amplifier 2002 Sep 06 Scattering parameters VS = 3 V; IS = 14.6 mA; PD = 30 dBm; ZO = 50 ; Tamb = 25 C. Product specification BGM1012 NXP Semiconductors Product specification MMIC wideband amplifier BGM1012 PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2002 Sep 06 REFERENCES IEC JEDEC JEITA SC-88 10 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 NXP Semiconductors Product specification MMIC wideband amplifier BGM1012 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/03/pp13 Date of release: 2002 Sep 06 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: BGM1012 T/R OM7615/BGM1012,598