DATA SH EET
Product specification
Supersedes data of 2002 May 16 2002 Sep 06
DISCRETE SEMICONDUCTORS
BGM1012
MMIC wideband amplifier
dbook, halfpage
MBD128
2002 Sep 06 2
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
FEATURES
Internally matched to 50
Very wide freque ncy range (4 G Hz at 3 dB bandwidth)
Very flat 20 dB gain (DC to 2.9 GHz at 1 dB flatness)
10 dBm saturated output power at 1 GHz
High lineari ty (18 dBm IP3 (out) at 1 GHz)
Low current (1 4.6 mA)
Unconditionally stable.
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Micr ow ave Integrated Circu it (MMIC )
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic pa ck age.
PINNING
PIN DESCRIPTION
1V
S
2, 5 GND2
3RFout
4GND1
6RFin
MAM455
132
41
63
2, 54
56
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: C2-.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VSDC supply voltage 3 4 V
ISDC supply current 14.6 mA
s212insertion power gain f = 1 GHz 20.1 dB
NF noise figure f = 1 GHz 4.8 dB
PL(sat) saturated load power f = 1 GHz 9.7 dBm
CAUTION
This product is supplied in anti-s tatic packing to prevent dama ge caused by electrostatic discharge during transport
and handling.
2002 Sep 06 3
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTE RISTI CS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VSDC supply voltage RF input AC coupled 4V
ISsupply current 50 mA
Ptot total power dissipation Ts90 C200 mW
Tstg storage temperature 65 +150 C
Tjoperating junction temperature 150 C
PDmaximum drive power 10 dBm
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from juncti on to
solder point Ptot = 200 mW; Ts90 C300K/W
2002 Sep 06 4
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
CHARACTERISTICS
VS=3V; I
S=14.6mA; T
j=25C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ISsupply current 11 14.6 19 mA
s212insertion power gain f = 100 MH z 19 19.5 20 dB
f = 1 GHz 19 20.1 21 dB
f = 1.8 GHz 19 20.4 21 dB
f = 2.2 GHz 19 20.4 22 dB
f = 2.6 GHz 18 19.9 21 dB
f = 3 GHz 16 18.7 20 dB
RLIN return losses input f = 1 GHz 9 11 dB
f = 2.2 GHz 13 15 dB
RLOUT return losses output f = 1 GHz 11 14 dB
f = 2.2 GHz 10 13 dB
s122isolation f = 1 GHz 30 33 dB
f = 2.2 GHz 35 38 dB
NF noise figure f = 1 GHz 4.8 5.1 dB
f=2.2GHz 4.9 5.3 dB
BW bandwidth at s2123 dB below flat gain at 1 GHz 3.1 3.6 GHz
K stability factor f = 1 GHz 1.5 2.1
f=2.2GHz 3 3.4
PL(sat) saturated load power f = 1 GHz 8 9.7 dBm
f = 2.2 GHz 3.5 5.6 dBm
PL1dB load power at 1 dB gain compression; f = 1 GHz 4 6.0 dBm
at 1 dB gain compression; f = 2.2 GHz 1.5 3.4 dBm
IP3(in) input intercept point f = 1 GHz 42dBm
f=2.2GHz 97dBm
IP3(out) output intercept point f = 1 GHz 16 18 dBm
f = 2.2 GHz 11 13 dBm
2002 Sep 06 5
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGM1012 MMIC. The device is internally matched to
50 , and therefore does not need any external matching.
The value of the input and output DC blocking capacitors
C2 and C3 should not be more than 100 pF for
applications above 100 MHz. However, when the device is
operated below 10 0 MHz , the capacitor value s hould be
increased.
The nominal value of the RF chok e L1 is 100 n H. At
frequencies below 100 MH z this valu e should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value (e.g. 10 nH) can be used to improve return
losses. For optimal results, a go od quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke L1 and the 22 nF supply decoup ling
capacitor C1 should be located as closely as possible to
the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as poss ible. When using vias, use multiple vias per
pin in order to limit groun d pa th ind uctance.
Figure 3 shows two cascaded MMICs. This configuration
doubles ove rall gain while preserving broadba nd
characteris tics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Goo d linea r performance
and matched input and outpu t offer quick design solut ions
in such applications.
handbook, halfpage
MGU436
RF outRF in
C1 L1
C2 C3
GND2GND1
Vs
Vs
RF input RF output
Fig.2 Typical application circuit.
handbook, halfpage DC-block
100 pF DC-block
100 pF
DC-block
100 pF
input output
MGU437
Fig.3 Easy cascading application circuit.
handbook, halfpage
from RF
circuit to IF circuit
or demodulator
MGU438
mixer
oscillator
wideband
amplifier
Fig.4 Application as IF amplifier.
handbook, halfpage
antenna to IF circuit
or demodulator
MGU439
mixer
oscillator
LNA wideband
amplifier
Fig.5 Application as RF amplifier.
handbook, halfpage
from modulation
or IF circuit to power
amplifier
MGU440
mixer
oscillator
wideband
amplifier
Fig.6 Application as driver amplifier.
2002 Sep 06 6
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
handbook, full pagewidth
MLD910
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
+0.2
0
−0.2
−0.5
−1
−2
−5
0.2 0.5 4 GHz 100 MHz2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
Fig.7 Input reflection coefficient (s11); typical values.
IS=14.6mA; V
S=3V; P
D=30 dBm; ZO=50
handbook, full pagewidth
MLD911
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
+0.2
0
−0.2
−0.5
−1
−2
−5
0.2 0.5
4 GHz
100 MHz
1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
Fig.8 Output reflection coefficient (s22); typical values.
IS=14.6mA; V
S=3V; P
D=30 dBm; ZO=50
2002 Sep 06 7
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
handbook, halfpage
0 1000 f (MHz)
2000 4000
0
−50
−10
3000
−20
−30
−40
MLD912
s12 2
(dB)
Fig.9 Isolation (s122) as a function of frequency;
typical values.
IS=14.6mA; V
S=3V; P
D=30 dBm; ZO=50
handbook, halfpage
0f (MHz)
(1)
(3)
25
20
15
10 1000 2000 4000
3000
MLD913
s21 2
(dB)
(2)
Fig.10 Insertion gain (s212) as a fu nction of
frequency; typical values.
PD=30 dBm; ZO=50
(1) IS=18.7mA; V
S=3.3V.
(2) IS=14.6mA; V
S=3V.
(3) IS=10.6mA; V
S=2.7V.
handbook, halfpage
−40 −30 PD (dBm)
PL
(dBm)
−20 0
20
10
−10
−20
0
−10
MLD914
(1) (2)
(3)
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
f=1GHz; Z
O=50
(1) VS=3.3V.
(2) VS=3V.
(3) VS=2.7V.
handbook, halfpage
−40 −30 PD (dBm)
PL
(dBm)
−20 0
(1)
(2)(3)
20
10
−10
−20
0
−10
MLD915
Fig.12 Load power as a function of drive power at
2.2 GHz; typ i cal values.
f=2.2 GHz; Z
O=50
(1) VS=3.3V.
(2) VS=3V.
(3) VS=2.7V.
2002 Sep 06 8
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
handbook, halfpage
0
(1)
(2)
(3)
1000 2000 f (MHz)
NF
(dB)
3000
5.5
4.5
5.3
5.1
4.9
4.7
MLD916
Fig.13 Noise figure as a function of frequency;
typical values.
ZO=50
(1) IS=10.6mA; V
S=2.7V.
(2) IS=14.6mA; V
S=3V.
(3) IS=18.7mA; V
S=3.3V.
handbook, halfpage
0f (MHz)
12
8
4
01000 2000 40003000
MLD917
K
Fig.14 Stability factor as a function of frequency;
typical values.
IS=14.6mA; V
S=3V; P
D=30 dBm; ZO=50
2002 Sep 06 9
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
Scattering parameters
VS=3V; I
S=14.6mA; P
D=30 d B m; ZO=50; Tamb =25C.
f(MHz) s11 s21 s12 s22 K-
FACTOR
MAGNITUDE
(ratio) ANGLE
(deg) MAGNITUDE
(ratio) ANGLE
(deg) MAGNITUDE
(ratio) ANGLE
(deg) MAGNITUDE
(ratio) ANGLE
(deg)
100 0.25122 14.607 9.33681 12.018 0.032124 16.445 0.26458 64.156 1.6
200 0.27070 2.759 9.42458 5.676 0.028303 6.37 0.20645 64.153 1.8
400 0.27979 7.969 9.63627 8.447 0.026297 4.545 0.1543 52.558 1.9
600 0.28323 14.78 9.76543 19.02 0.024833 10.24 0.15203 39.347 1.9
800 0.28557 20.13 9.93782 27.93 0.023234 14.62 0.16867 27.926 2.0
1000 0.28673 24.14 10.03633 36.88 0.021523 17.42 0.19196 19.293 2.1
1200 0.28517 27.57 10.11638 46.47 0.019830 19.83 0.21421 12.703 2.2
1400 0.27902 29.93 10.26450 56.05 0.018230 21.14 0.23292 7.154 2.4
1600 0.26682 31.81 10.40572 65.76 0.016902 21.62 0.24605 2.582 2.5
1800 0.24746 33.12 10.44088 76.97 0.015759 22.32 0.25113 1.26 2.7
2000 0.21894 33.8 10.46224 88.33 0.014310 22.64 0.24367 4.817 3.0
2200 0.18164 32.67 10.45202 100.3 0.013012 23.13 0.22184 7.573 3.4
2400 0.14000 26.75 10.34342 112.6 0.011826 23.27 0.18787 8.489 3.9
2600 0.10418 10.16 9.87989 122.9 0.010171 23.23 0.13049 4.601 4.9
2800 0.09469 15.051 9.20393 129.5 0.008664 16.9 0.1294 9.578 6.2
3000 0.10595 33.415 8.68177 135.4 0.007541 9.957 0.1127 18.402 7.5
3200 0.11609 42.888 8.18809 142.2 0.006655 0.835 0.092234 23.406 9.0
3400 0.10827 50.017 7.93039 151.5 0.006042 12.444 0.059268 26.453 10.3
3600 0.09866 60.967 7.77538 162.2 0.006205 29.297 0.015829 38.211 10.3
3800 0.08693 80.355 7.33775 172.6 0.007039 40.351 0.028159 152.8 9.6
4000 0.10090 102.07 6.90878 177.1 0.008241 46.053 0.075298 133.1 8.7
2002 Sep 06 10
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT363 SC-88
wBM
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
456
Plastic surface-mounted package; 6 leads SOT363
UNIT A1
max bpcDEe1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
04-11-08
06-03-16
2002 Sep 06 11
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product sta tus of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is availa ble on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Pr oduction This document contains the produc t specification.
DEFINITIONS
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provided in a Product data she et shall define the
specification of the product as agre ed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sh eet.
DISCLAIMERS
Limited warranty and liability Information in this
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However, NXP Semiconduc tors does not give any
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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Customers are responsible for the design and operation of
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Semiconductors products, and NXP Semiconductors
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Semiconductors pro du ct is su itable and fit for the
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associated with their ap plications and products.
2002 Sep 06 12
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
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customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any othe r
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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drawings which were updated to the latest version.
Printed in The Netherlands R77/03/pp13 Date of release: 2002 Sep 06
