BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with the
BD249 Series
●125 W at 25°C Case Temperature
●25 A Continuous Collector Current
●40 A Peak Collector Current
●Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (RBE = 100 Ω)
BD250
BD250A
BD250B
BD250C
VCER
-55
-70
-90
-115
V
Collector-emitter voltage (IC = -30 mA)
BD250
BD250A
BD250B
BD250C
VCEO
-45
-60
-80
-100
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-25 A
Peak collector current (see Note 1) ICM -40 A
Continuous base current IB-5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3W
Unclamped inductive load energy (see Note 4) ½LIC290 mJ
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL250 °C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
OBSOLETE
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = -30 mA
(see Note 5)
IB = 0
BD250
BD250A
BD250B
BD250C
-45
-60
-80
-100
V
ICES
Collector-emitter
cut-off current
VCE = -55 V
VCE = -70 V
VCE = -90 V
VCE = -115 V
VBE =0
VBE =0
VBE =0
VBE =0
BD250
BD250A
BD250B
BD250C
-0.7
-0.7
-0.7
-0.7
mA
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB=0
IB=0
BD250/250A
BD250B/250C
-1
-1 mA
IEBO
Emitter cut-off
current VEB = -5 V IC=0 -1 mA
hFE
Forward current
transfer ratio
VCE = -4 V
VCE = -4 V
VCE = -4 V
IC=-1.5A
IC= -15A
IC= -25A
(see Notes 5 and 6)
25
10
5
VCE(sat)
Collector-emitter
saturation voltage
IB = -1.5 A
IB = -5 A
IC= -15A
IC= -25A (see Notes 5 and 6) -1.8
-4 V
VBE
Base-emitter
voltage
VCE = -4 V
VCE = -4 V
IC= -15 A
IC= -25 A (see Notes 5 and 6) -2
-4 V
hfe
Small signal forward
current transfer ratio VCE = -10 V IC= - 1A f = 1 kHz 25
|hfe|Small signal forward
current transfer ratio VCE = -10 V IC= -1A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1°C/W
RθJA Junction to free air thermal resistance 42 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n t i m e I C = -5 A
VBE(off) = 5 V
IB(on) = -0.5 A
RL = 5 Ω
IB(off) = 0.5 A
tp = 20 µs, dc ≤ 2%
0.2 µs
toff Turn-off time 0.4 µs
OBSOLETE
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
3
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·1 -1·0 -10 -100
hFE - DC Current Gain
1
10
100
1000 TCS636AD
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
-0·001 -0·01 -0·1 -1·0 -10 -100
VCE(sat) - Collector-Emitter Saturation Voltage - V
-0·01
-0·1
-1·0
-10 TCS636AB
IC = -25 A
IC = -20 A
IC = -15 A
IC = -10 A
IC = -300 mA
IC = -1 A
IC = -3 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·1 -1·0 -10 -100
VBE - Base-Emitter Voltage - V
-0·6
-0·8
-1·0
-1·2
-1·4
-1·6
-1·8 TCS636AC
VCE = -4 V
TC = 25°C
OBSOLETE
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
-1·0 -10 -100 -1000
IC - Collector Current - A
-0·01
-0·1
-1·0
-10
-100 SAS636AB
BD250
BD250A
BD250B
BD250C
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100
120
140 TIS635AA
OBSOLETE
