TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per M I L-PR F - 19 5 00/211
• Glass Passivated Die • Glass to Metal Header Construction
• Rugged Construction • High Surge Current Capability
T4-LDS-0140 Rev. 1 (091750) Page 1 of 3
DEVICES LEVELS
1N3164 1N3172 1N3164R 1N3172R JAN
1N3168 1N3174 1N3168R 1N3174R JANTX
1N3170 1N3170R JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Peak Repetitive Reverse Voltage
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
VRWM
200
400
600
800
1000
V
Average Forward Current, TC = 150° IF 200 A
Average Forward Current, TC = 120° IF 300 A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 200°C IFSM 6250 A
Thermal Resistance, Junction to Case RθJC 0.20 °C/W
Typical Thermal Resistance RθCS 0.80 °C/W
Operating Case Temperature Range Tj -65°C to 200°C °C
Storage Temperature Range TSTG -65°C to 200°C °C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unle ss othe rwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Voltage
IFM = 940A, TC = 25°C VFM 1.55 V
Reverse Current
VRM = 200, TC = 25°C
VRM = 400, TC = 25°C
VRM = 600, TC = 25°C
VRM = 800, TC = 25°C
VRM = 1000, TC = 25°C
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
IRM 10 mA
Reverse Current
VRM = 200, TC = 175°C
VRM = 400, TC = 175°C
VRM = 600, TC = 175°C
VRM = 800, TC = 175°C
VRM = 1000, TC = 175°C
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
IRM 30 mA
Note:
DO-205AB (DO-9)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
T4-LDS-0140 Rev. 1 (091750) Page 2 of 3
GRAPHS
FIGURE 3
FORWARD CURRENT DERATING
FIGURE 1
TYPICAL FORWARD CHARACTERISTICS
FIGURE 2
TYPICAL REVERSE CHARACTERISTICS
FIGURE 5
MAXIMUM NONREPETI TIVE
MULTI-CYCLE SURGE CURRENT
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
T4-LDS-0140 Rev. 1 (091750) Page 3 of 3
PACKAGE DIMENSIONS
Dimensions
Symbol Inches Millimeters Notes
Min Max Min Max
A 1.520 38.10 4
B .530 .755 13.46 19.18
C .063 .172 1.60 4.37
φD 1.100 27.94
φD1 .600 15.24
E 1.218 1.252 30.94 31.75
F .250 .562 6.35 14.27 5
H 5.125 6.750 130.18 171.45
I1 .375 9.53 7
φM .660 .745 16.76 18.92 2
M1 .125 3.18 6
N .793 .828 20.14 21.03
Q 2.300 57.15
Q1 .375 9.53 6
φt .265 .350 6.73 3.89
W 3
NOTES:
1. Metric equi valent s are gi ven for general information only.
2. Complete threads to extend to within 2.5 threads of seating
plane.
3. .750-16 UNF-2A. Maximum pitch diameter of plat ed
threads shall be basic pi t ch di ameter. .7094 (18.01 9 m m)
ref. (Screw Thread Standards for Federal Services) FED-
STD-H28.
4. Angular orientation of terminal and tabulation with respect
to hex base is undefined. Square or radi us o n en d o f
terminal is undefined.
5. A chamfer (or un dercut ) on one or both ends of hexagonal
portions is opt i onal .
6. Tabulation opt i onal .
7. Minimum flat.
8. Flexible leads.
Physical dimensions for semiconductor devices
