Document No. E0237E10 (Ver. 1.0)
Date Published January 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2002
C
PRELIMINARY DATA SHEET
512M bits DDR SDRAM
EDD5104AB (128M words ×
××
× 4 bits)
EDD5108AB (64M words ×
××
× 8 bits)
Description
The EDD5104AB is a 512M bits Double Data Rate
(DDR) SDRAM organized as 33,554,432 words × 4 bits
× 4 banks. The EDD5108AB is a 512M bits DDR
SDRAM organized as 16,777,216 words × 8 bits × 4
banks. Read and write operations are performed at the
cross points of the CK and the /CK. This high-speed
data transfer is realized by the 2 bits prefetch-pipelined
architecture. Data strobe (DQS) both for read and
write are available for high speed and reliable data bus
design. By setting extended mode resistor, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
They are packaged in standard 66-pin plastic TSOP
(II).
Features
• 2.5 V power supply: VDDQ = 2.5V ± 0.2V
: VDD = 2.5V ± 0.2V
• Clock frequency: 333Mbps/266Mbps (max.)
• Double Data Rate architecture; two data transfers per
clock cycle
• Bi-directional, data strobe (DQS) is transmitted
/received with data, to be used in capturing data at
the receiver
• Data inputs, outputs, and DM are synchronized with
DQS
• 4 internal banks for concurrent operation
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• 2.5 V (SSTL_2 compatible) I/O
• Programmable burst length (BL): 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Refresh cycles: 8192 refresh cycles/64ms
7.8µs maximum average periodic refresh interval
• 2 variations of refresh
Auto refresh
Self refresh
Pin Configurations
/xxx indicates active low signal.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
VDD
NC
VDDQ
NC
DQ0
VSSQ
NC
NC
VDDQ
NC
DQ1
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10(AP)
A0
A1
A2
A3
VDD
VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
66-pin TSOP
(Top view)
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10(AP)
A0
A1
A2
A3
VDD
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
X 8
X 4
Address input
Bank select address
Data-input/output
Input and output data strobe
Chip select
Row address strobe command
Column address strobe command
Write enable
Input mask
Clock input
Differential clock input
Clock enable
Input reference voltage
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
A0 to A12
BA0, BA1
DQ0 to DQ7
DQS
/CS
/RAS
/CAS
/WE
DM
CK
/CK
CKE
VREF
VDD
VSS
VDDQ
VSSQ
NC
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
2
Ordering Information
Part number
Mask
version
Organization
(words × bits)
Internal
banks
Clock frequency
bps (max.)
JEDEC speed bin
(CL-tRCD-tRP)
Package
EDD5104ABTA-6B
EDD5104ABTA-75
EDD5104ABTA-7A
B 128M × 4 4
333
266
266
DDR-333B (2.5-3-3)
DDR-266 (2-2-2)
DDR-266A (2-3-3)
66-pin Plastic
TSOP (II)
EDD5108ABTA-6B
EDD5108ABTA-75
EDD5108ABTA-7A
64M × 8
333
266
266
DDR-333B (2.5-3-3)
DDR-266 (2-2-2)
DDR-266A (2-3-3)
Part Number
Elpida Memory
Density & Bank
51: 512M/4 Banks
Bit Organization
4: x4
8: x8
Interface
A: SSTL_2
Mask Revision
Package
TA: TSOP (II)
Speed
JEDEC Speed bin
(CL-tRCD-tRP)
6B: 333B (2.5-3-3)
75: 266 (2-2-2)
7A: 266A (2-3-3)
Function
D: DDR (I)
Material Type
D: Mono
E D D 51 04 A B TA - 6B
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
3
CONTENTS
Description .................................................................................................................................................... 1
Features ........................................................................................................................................................ 1
Pin Configurations ......................................................................................................................................... 1
Ordering Information ..................................................................................................................................... 2
Part Number .................................................................................................................................................. 2
Electrical Specifications................................................................................................................................. 4
Block Diagram ............................................................................................................................................. 10
Pin Function ................................................................................................................................................11
Command Operation................................................................................................................................... 13
Simplified State Diagram............................................................................................................................. 21
Operation of the DDR SDRAM.................................................................................................................... 22
Timing Waveforms ...................................................................................................................................... 41
Package Drawing ........................................................................................................................................ 47
Recommended Soldering Conditions.......................................................................................................... 48
Revision History .......................................................................................................................................... 51
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
4
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 200 µs and then, execute power on sequence and CBR (Auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter Symbol Rating Unit Note
Voltage on any pin relative to VSS VT –1.0 to +3.6 V
Supply voltage relative to VSS VDD –1.0 to +3.6 V
Short circuit output current IOS 50 mA
Power dissipation PD 1.0 W
Operating temperature TA 0 to +70 °C
Storage temperature Tstg –55 to +125 °C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions (TA = 0 to 70°
°°
°C)
Parameter Symbol Min Typ Max Unit Notes
Supply voltage VDD,
VDDQ 2.3 2.5 2.7 V 1
VSS,
VSSQ 0 0 0 V
Input reference voltage VREF 0.49 × VDDQ 0.50 × VDDQ 0.51 × VDDQ V
Termination voltage VTT VREF – 0.04 VREF VREF + 0.04 V
Input high voltage VIH (DC) VREF + 0.15 — VDDQ + 0.3 V 2
Input low voltage VIL (DC) –0.3 — VREF – 0.15 V 3
Input voltage level,
CK and /CK inputs VIN (DC) –0.3 — VDDQ + 0.3 V 4
Input differential cross point
voltage, CK and /CK inputs VIX (DC) 0.5 × VDDQ − 0.2V 0.5 × VDDQ 0.5 × VDDQ + 0.2V V
Input differential voltage,
CK and /CK inputs VID (DC) 0.36 — VDDQ + 0.6 V 5, 6
Notes: 1. VDDQ must be lower than or equal to VDD.
2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
4. VIN (DC) specifies the allowable dc execution of each differential input.
5. VID (DC) specifies the input differential voltage required for switching.
6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
5
DC Characteristics 1 (TA = 0 to +70°
°°
°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
max.
Parameter Symbol Grade × 4 × 8 Unit Test condition Notes
Operating current (ACT-PRE) IDD0 -6B, -75
-7A
150
135
150
135 mA CKE ≥ VIH,
tRC = tRC (min.) 1, 2, 5
Operating current
(ACT-READ-PRE) IDD1 -6B, -75
-7A
170
155
180
160 mA
CKE ≥ VIH, BL = 2,
CL = 2.5,
tRC = tRC (min.)
1, 2, 5
Idle power down standby
current IDD2P 3 3 mA CKE ≤ VIL 4
Idle standby current IDD2N -6B
-75, -7A
40
35
40
35 mA CKE ≥ VIH, /CS ≥ VIH 4, 5
Active power down standby
current IDD3P 20 20 mA CKE ≤ VIL 3
Active standby current IDD3N -6B
-75, -7A
70
60
70
60 mA CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.) 3, 5, 6
Operating current
(Burst read operation) IDD4R -6B
-75, -7A
190
150
200
160 mA CKE ≥ VIH, BL = 2,
CL = 2.5
1, 2, 5,
6
Operating current
(Burst write operation) IDD4W -6B
-75, -7A
190
150
200
160 mA CKE ≥ VIH, BL = 2,
CL = 2.5
1, 2, 5,
6
Auto Refresh current IDD5 -6B
-75, -7A
290
270
290
270 mA tRFC = tRFC (min.),
Input ≤ VIL or ≥ VIH
Self refresh current IDD6 4 4 mA Input ≥ VDD – 0.2 V
Input ≤ 0.2 V
Operating current
(4 banks interleaving) IDD7A -6B
-75, -7A
420
360
430
370 mA BL = 4 5, 6, 7
Notes: 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one clock cycle.
6. DQ, DM and DQS transition twice per one clock cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
DC Characteristics 2 (TA = 0 to +70°
°°
°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter Symbol min. max. Unit Test condition Notes
Input leakage current IL –2 2 µA VDD ≥ VIN ≥ VSS
Output leakage current IOZ –5 5 µA VDDQ ≥ VOUT ≥ VSS
Output high current IOH –15.2 — mA VOUT = 1.95V
Output low current IOL 15.2 — mA VOUT = 0.35V
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
6
Pin Capacitance (TA = +25°C, VDD, VDDQ = 2.5V ± 0.2V)
Parameter Symbol Pins min. Typ max. Unit Notes
Input capacitance CI1 CK, /CK 2.0 — 3.0 pF 1
CI2 All other input pins 2.0 — 3.0 pF 1
Delta input capacitance Cdi1 CK, /CK — — 0.25 pF 1
Cdi2 All other input-only pins — — 0.5 pF 1
Data input/output capacitance CI/O DQ, DM, DQS 4.0 — 5 pF 1, 2,
Delta input/output capacitance Cdio DQ, DM, DQS — — 0.5 pF 1
Notes: 1. These parameters are measured on conditions: f = 100MHz, VOUT = VDDQ/2, ∆VOUT = 0.2V,
TA = +25°C.
2. DOUT circuits are disabled.
AC Characteristics (TA = 0 to +70°
°°
°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
-6B -75 -7A
Parameter Symbol min. max. min. max. min. max Unit Notes
Clock cycle time
(CL = 2) tCK 7.5 12 7.5 12 7.5 12 ns 10
(CL = 2.5) tCK 6 12 7.5 12 7.5 12 ns
CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK
CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK
CK half period tHP min
(tCH, tCL) — min
(tCH, tCL) — min
(tCH, tCL) — tCK
DQ output access time from
CK, /CK tAC –0.7 0.7 –0.75 0.75 –0.75 0.75 ns 2, 11
DQS output access time from
CK, /CK tDQSCK –0.6 0.6 –0.75 0.75 –0.75 0.75 ns 2, 11
DQS to DQ skew tDQSQ — 0.45 — 0.5 — 0.6 ns 3
DQ/DQS output hold time from
DQS tQH tHP – tQHS — tHP – tQHS — tHP – tQHS — ns
Data hold skew factor tQHS — 0.55 — 0.75 — 0.75 ns
Data-out high-impedance time
from CK, /CK tHZ –0.7 0.7 –0.75 0.75 –0.75 0.75 ns 5, 11
Data-out low-impedance time
from CK, /CK tLZ –0.7 0.7 –0.75 0.75 –0.75 0.75 ns 6, 11
Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK
Read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK
DQ and DM input setup time tDS 0.45 — 0.5 — 0.5 — ns 8
DQ and DM input hold time tDH 0.45 — 0.5 — 0.5 — ns 8
DQ and DM input pulse width tDIPW 1.75 — 1.75 — 1.75 — ns 7
Write preamble setup time tWPRES 0 — 0 — 0 — ns
Write preamble tWPRE 0.25 — 0.25 — 0.25 — tCK
Write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK 9
Write command to first DQS
latching transition tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK
DQS falling edge to CK setup
time tDSS 0.2 — 0.2 — 0.2 — tCK
DQS falling edge hold time from
CK tDSH 0.2 — 0.2 — 0.2 — tCK
DQS input high pulse width tDQSH 0.35 — 0.35 — 0.35 — tCK
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
7
-6B -75 -7A
Parameter Symbol min. max. min. max. min. max Unit Notes
DQS input low pulse width tDQSL 0.35 0.35 — 0.35 — tCK
Address and control input setup
time tIS 0.75 — 0.9 — 0.9 — ns 8
Address and control input hold
time tIH 0.75 — 0.9 — 0.9 — ns 8
Address and control input pulse
width tIPW 2.2 — 2.2 — 2.2 — ns 7
Mode register set command
cycle time tMRD 2 — 2 — 2 — tCK
Active to Precharge command
period tRAS 42 120000 45 120000 45 120000 ns
Active to Active/Auto refresh
command period tRC 60 — 60 — 67.5 — ns
Auto refresh to Active/Auto
refresh command period tRFC 72 — 75 — 75 — ns
Active to Read/Write delay tRCD 18 — 15 — 20 — ns
Precharge to active command
period tRP 18 — 15 — 20 — ns
Active to active command period tRRD 12 — 15 — 15 — ns
Write recovery time tWR 15 — 15 — 15 — ns
Auto precharge write recovery
and precharge time tDAL (tWR/tCK)+
(tRP/tCK) (tWR/tCK)+
(tRP/tCK) — (tWR/tCK)+
(tRP/tCK) — tCK 13
Internal write to Read command
delay tWTR 1 — 1 — 1 — tCK
Average periodic refresh interval tREF — 7.8 — 7.8 — 7.8 µs
Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter
definitions, see ‘Timing Waveforms’ section.
2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal
transition is defined to occur when the signal level crossing VTT.
3. The timing reference level is VTT.
4. Output valid window is defined to be the period between two successive transition of data out or DQS
(read) signals. The signal transition is defined to occur when the signal level crossing VTT.
5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The
timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage
level, but specify when the device output stops driving.
6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This
parameter is not referred to a specific DOUT voltage level, but specify when the device output begins
driving.
7. Input valid windows is defined to be the period between two successive transition of data input or DQS
(write) signals. The signal transition is defined to occur when the signal level crossing VREF.
8. The timing reference level is VREF.
9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific
reference voltage to judge this transition is not given.
10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not
assured.
11. tCK = tCK (min.) when these parameters are measured. Otherwise, absolute minimum values of these
values are 10% of tCK.
12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than
0.4V/400 cycle.
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
8
13. tDAL = (tWR/tCK)+(tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns,
tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3)
tDAL = 5 clocks
Test Conditions
Parameter Symbol Value Unit
Input reference voltage VREF 1.25 V
Termination voltage VTT VREF V
Input high voltage VIH (AC) VREF + 0.31 V
Input low voltage VIL (AC) VREF − 0.31 V
Input differential voltage, CK and /CK
inputs VID (AC) 0.62 V
Input differential cross point voltage,
CK and /CK inputs VIX (AC) VREF V
Input signal slew rate SLEW 1 V/ns
VTT
VREF
/CK
CK
VREF
VSS
SLEW = (VIH (AC) – VIL (AC))/∆t
Measurement point
VIH
VIL
VDD
VDD
VSS
DQ
RT = 50Ω
CL = 30pF
VIX
∆t
tCL
tCK
tCH
VID
Input Waveforms and Output Load
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
9
Timing Parameter Measured in Clock Cycle
Number of clock cycle
tCK 6ns 7.5ns
Parameter Symbol min. max. min. max.
Write to pre-charge command delay (same bank) tWPD 3 + BL/2 3 + BL/2
Read to pre-charge command delay (same bank) tRPD BL/2 BL/2
Write to read command delay (to input all data) tWRD 2 + BL/2 2 + BL/2
Burst stop command to write command delay
(CL = 2) tBSTW 2 2
(CL = 2.5) tBSTW 3 3
Burst stop command to DQ High-Z
(CL = 2) tBSTZ 2 2
(CL = 2.5) tBSTZ 2.5 2.5
Read command to write command delay
(to output all data)
(CL = 2)
tRWD 2 + BL/2 2 + BL/2
(CL = 2.5) tRWD 3 + BL/2 3 + BL/2
Pre-charge command to High-Z
(CL = 2) tHZP 2 2
(CL = 2.5) tHZP 2.5 2.5
Write command to data in latency tWCD 1 1
Write recovery time tWR 3 2
DM to data in latency tDMD 0 0
Mode register set command cycle time tMRD 2 2
Self refresh exit to non-read command tSNR 12 10
Self refresh exit to read command tSRD 12 10
Power down entry tPDEN 1 1
Power down exit to command input tPDEX 1 1
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
10
Block Diagram
A0 to A12, BA0, BA1
/CS
/RAS
/CAS
/WE
Command decoder
Input & Output buffer
Latch circuit
Data control circuit
Column decoder
Row decoder
Memory cell array
Bank 0
Sense amp.
Bank 1
Bank 2
Bank 3
Control logic
Column
address
buffer
and
burst
counter
Row
address
buffer
and
refresh
counter
Mode
register
Clock
generator
DQ
CK
/CK
CKE
DQS
DM
DLL
CK, /CK
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
11
Pin Function
CK, /CK (input pins)
The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross
point of the CK rising edge and the /CK falling edge. When a read operation, DQSs and DQs are referred to the
cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS
and the VREF level. DQSs for write operation are referred to the cross point of the CK and the /CK. CK is the
master clock input to this pin. The other input signals are referred at CK rising edge.
/CS (input pin)
When /CS is Low, commands and data can be input. When /CS is High, all inputs are ignored. However, internal
operations (bank active, burst operations, etc.) are held.
/RAS, /CAS, and /WE (input pins)
These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels.
See "Command operation".
A0 toA12 (input pins)
Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the
/CK falling edge in a bank active command cycle. Column address (See “Address Pins Table”) is loaded via the A0
to the A9, A11 and A12 at the cross point of the CK rising edge and the /CK falling edge in a read or a write
command cycle. This column address becomes the starting address of a burst operation.
[Address Pins Table]
Address (A0 to A12)
Part number Row address Column address
EDD5104AB AX0 to AX12 AY0 to AY9, AY11, AY12
EDD5108AB AX0 to AX12 AY0 to AY9, AY11,
A10 (AP) (input pin)
A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If
A10 = High when a precharge command is issued, all banks are precharged. If A10 = Low when a precharge
command is issued, only the bank that is selected by BA1/BA0 is precharged. If A10 = High when read or write
command, auto-precharge function is enabled. While A10 = Low, auto-precharge function is disabled.
BA0 and BA1 (input pins)
BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See
Bank Select Signal Table)
[Bank Select Signal Table]
BA0 BA1
Bank 0 L L
Bank 1 H L
Bank 2 L H
Bank 3 H H
Remark: H: VIH. L: VIL. ×: VIH or VIL
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
12
CKE (input pin)
This pin determines whether or not the next CK is valid. If CKE is High, the next CK rising edge is valid. If CKE is
Low. CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when
the CKE is driven Low and exited when it resumes to High. CKE must be maintained high throughout read or write
access.
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge
and the /CK falling edge with proper setup time tIS, by the next CK rising edge CKE level must be kept with proper
hold time tIH.
DM (input pin)
DM are the reference signals of the data input mask function. DMs are sampled at the cross point of DQS and
VREF.
DQ0 toDQ7 (input/output pins)
Data is input to and output from these pins (DQ0 to DQ3; EDD5104AB, DQ0 to DQ7; EDD5108AB).
DQS (input and output pin): DQS provide the read data strobes (as output) and the write data strobes (as input).
VDD, VSS, VDDQ, VSSQ (Power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers.
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
13
Command Operation
Command Truth Table
DDR SDRAM recognize the following commands specified by the /CS, /RAS, /CAS, /WE and address pins. All other
combinations than those in the table below are illegal.
CKE
Command Symbol n – 1 n /CS /RAS /CAS /WE BA1 BA0 AP Address
Ignore command DESL H H H × × × × × × ×
No operation NOP H H L H H H × × × ×
Burst stop in read command BST H H L H H L × × × ×
Column address and read command READ H H L H L H V V L V
Read with auto-precharge READA H H L H L H V V H V
Column address and write command WRIT H H L H L L V V L V
Write with auto-precharge WRITA H H L H L L V V H V
Row address strobe and bank active ACT H H L L H H V V V V
Precharge select bank PRE H H L L H L V V L ×
Precharge all bank PALL H H L L H L × × H ×
Refresh REF H H L L L H × × × ×
SELF H L L L L H × × × ×
Mode register set MRS H H L L L L L L L V
EMRS H H L L L L L H L V
Remark: H: VIH. L: VIL. ×: VIH or VIL V: Valid address input
Note: The CKE level must be kept for 1 CK cycle at least.
Ignore command [DESL]
When /CS is High at the cross point of the CK rising edge and the VREF level, every input are neglected and internal
status is held.
No operation [NOP]
As long as this command is input at the cross point of the CK rising edge and the VREF level, address and data
input are neglected and internal status is held.
Burst stop in read operation [BST]
This command stops a burst read operation, which is not applicable for a burst write operation.
Column address strobe and read command [READ]
This command starts a read operation. The start address of the burst read is determined by the column address
(See “Address Pins Table” in Pin Function) and the bank select address. After the completion of the read operation,
the output buffer becomes High-Z.
Read with auto-precharge [READA]
This command starts a read operation. After completion of the read operation, precharge is automatically executed.
Column address strobe and write command [WRIT]
This command starts a write operation. The start address of the burst write is determined by the column address
(See “Address Pins Table” in Pin Function) and the bank select address.
Write with auto-precharge [WRITA]
This command starts a write operation. After completion of the write operation, precharge is automatically executed.
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
14
Row address strobe and bank activate [ACT]
This command activates the bank that is selected by BA0, BA1 and determines the row address (AX0 to AX12).
(See Bank Select Signal Table)
Precharge selected bank [PRE]
This command starts precharge operation for the bank selected by BA0, BA1. (See Bank Select Signal Table)
[Bank Select Signal Table]
BA0 BA1
Bank 0 L L
Bank 1 H L
Bank 2 L H
Bank 3 H H
Remark: H: VIH. L: VIL. ×: VIH or VIL
Precharge all banks [PALL]
This command starts a precharge operation for all banks.
Refresh [REF/SELF]
This command starts a refresh operation. There are two types of refresh operation, one is auto-refresh, and another
is self-refresh. For details, refer to the CKE truth table section.
Mode register set/Extended mode register set [MRS/EMRS]
The DDR SDRAM has the two mode registers, the mode register and the extended mode register, to defines how it
works. The both mode registers are set through the address pins (the A0 to the A12, BA0 to BA1) in the mode
register set cycle. For details, refer to "Mode register and extended mode register set".
CKE Truth Table
CKE
Current state Command n – 1 n /CS /RAS /CAS /WE Address Notes
Idle Auto-refresh command (REF) H H L L L H × 2
Idle Self-refresh entry (SELF) H L L L L H × 2
Idle Power down entry (PDEN) H L L H H H ×
H L H × × × ×
Self refresh Self refresh exit (SELFX) L H L H H H ×
L H H × × × ×
Power down Power down exit (PDEX) L H L H H H ×
L H H × × × ×
Remark: H: VIH. L: VIL. ×: VIH or VIL.
Notes: 1. All the banks must be in IDLE before executing this command.
2. The CKE level must be kept for 1 CK cycle at least.
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
15
Function Truth Table
The following tables show the operations that are performed when each command is issued in each state of the
DDR SDRAM.
Function Truth Table (1)
Current state /CS /RAS /CAS /WE Address Command Operation Next state
Precharging*1 H × × × × DESL NOP ldle
L H H H × NOP NOP ldle
L H H L × BST ILLEGAL*11 —
L H L H BA, CA, A10 READ/READA ILLEGAL*11 —
L H L L BA, CA, A10 WRIT/WRITA ILLEGAL*11 —
L L H H BA, RA ACT ILLEGAL*11 —
L L H L BA, A10 PRE, PALL NOP ldle
L L L × × ILLEGAL —
Idle*2 H × × × × DESL NOP ldle
L H H H × NOP NOP ldle
L H H L × BST ILLEGAL*11 —
L H L H BA, CA, A10 READ/READA ILLEGAL*11 —
L H L L BA, CA, A10 WRIT/WRITA ILLEGAL*11 —
L L H H BA, RA ACT Activating Active
L L H L BA, A10 PRE, PALL NOP ldle
L L L H × REF, SELF Refresh/
Self refresh*12
ldle/
Self refresh
L L L L MODE MRS Mode register set*12 ldle
Refresh
(auto-refresh)*3 H × × × × DESL NOP ldle
L H H H × NOP NOP ldle
H H H L × BST ILLEGAL —
L H L × × ILLEGAL —
L L × × × ILLEGAL —
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
16
Function Truth Table (2)
Current state /CS /RAS /CAS /WE Address Command Operation Next state
Activating*4 H × × × × DESL NOP Active
L H H H × NOP NOP Active
L H H L × BST ILLEGAL*11 —
L H L H BA, CA, A10 READ/READA ILLEGAL*11 —
L H L L BA, CA, A10 WRIT/WRITA ILLEGAL*11 —
L L H H BA, RA ACT ILLEGAL*11 —
L L H L BA, A10 PRE, PALL ILLEGAL*11 —
L L L × × ILLEGAL —
Active*5 H × × × × DESL NOP Active
L H H H × NOP NOP Active
L H H L × BST ILLEGAL Active
L H L H BA, CA, A10 READ/READA Starting read operation Read/READA
L H L L BA, CA, A10 WRIT/WRITA Starting write operation
Write
recovering/
precharging
L L H H BA, RA ACT ILLEGAL*11 —
L L H L BA, A10 PRE, PALL Pre-charge Idle
L L L × × ILLEGAL —
Read*6 H × × × × DESL NOP Active
L H H H × NOP NOP Active
L H H L × BST BST Active
L H L H BA, CA, A10 READ/READA
Interrupting burst read
operation to
start new read
Active
L H L L BA, CA, A10 WRIT/WRITA ILLEGAL*13 —
L L H H BA, RA ACT ILLEGAL*11 —
L L H L BA, A10 PRE, PALL
Interrupting burst
read operation to
start pre-charge
Precharging
L L L × × ILLEGAL —
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
17
Function Truth Table (3)
Current state /CS /RAS /CAS /WE Address Command Operation Next state
Read with auto-pre-
charge*7 H × × × × DESL NOP Precharging
L H H H × NOP NOP Precharging
L H H L × BST ILLEGAL —
L H L H BA, CA, A10 READ/READA ILLEGAL —
L H L L BA, CA, A10 WRIT/WRITA ILLEGAL —
L L H H BA, RA ACT ILLEGAL*11 —
L L H L BA, A10 PRE, PALL ILLEGAL*11 —
L L L × × ILLEGAL —
Write*8 H × × × × DESL NOP Write
recovering
L H H H × NOP NOP Write
recovering
L H H L × BST ILLEGAL —
L H L H BA, CA, A10 READ/READA
Interrupting burst write
operation to
start read operation.
Read/ReadA
L H L L BA, CA, A10 WRIT/WRITA
Interrupting burst write
operation to
start new write
operation.
Write/WriteA
L L H H BA, RA ACT ILLEGAL*11 —
L L H L BA, A10 PRE, PALL
Interrupting write
operation to start pre-
charge.
Idle
L L L × × ILLEGAL —
Write recovering*9 H × × × × DESL NOP Active
L H H H × NOP NOP Active
L H H L × BST ILLEGAL —
L H L H BA, CA, A10 READ/READA Starting read operation. Read/ReadA
L H L L BA, CA, A10 WRIT/WRITA Starting new write
operation. Write/WriteA
L L H H BA, RA ACT ILLEGAL*11 —
L L H L BA, A10 PRE/PALL ILLEGAL*11 —
L L L × × ILLEGAL —
Write with auto-
pre-charge*10 H × × × × DESL NOP Precharging
L H H H × NOP NOP Precharging
L H H L × BST ILLEGAL —
L H L H BA, CA, A10 READ/READA ILLEGAL —
L H L L BA, CA, A10 WRIT/WRIT A ILLEGAL —
L L H H BA, RA ACT ILLEGAL*11 —
L L H L BA, A10 PRE, PALL ILLEGAL*11 —
L L L × × ILLEGAL —
Remark: H: VIH. L: VIL. ×: VIH or VIL
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
18
Notes: 1. The DDR SDRAM is in "Precharging" state for tRP after precharge command is issued.
2. The DDR SDRAM reaches "IDLE" state tRP after precharge command is issued.
3. The DDR SDRAM is in "Refresh" state for tRC after auto-refresh command is issued.
4. The DDR SDRAM is in "Activating" state for tRCD after ACT command is issued.
5. The DDR SDRAM is in "Active" state after "Activating" is completed.
6. The DDR SDRAM is in "READ" state until burst data have been output and DQ output circuits are turned
off.
7. The DDR SDRAM is in "READ with auto-precharge" from READA command until burst data has been
output and DQ output circuits are turned off.
8. The DDR SDRAM is in "WRITE" state from WRIT command to the last burst data are input.
9. The DDR SDRAM is in "Write recovering" for tWR after the last data are input.
10. The DDR SDRAM is in "Write with auto-precharge" until tWR after the last data has been input.
11. This command may be issued for other banks, depending on the state of the banks.
12. All banks must be in "IDLE".
13. Before executing a write command to stop the preceding burst read operation, BST command must be
issued.
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
19
Command Truth Table for CKE
Current State CKE
n – 1 n /CS /RAS /CAS /WE Address Operation Notes
Self refresh H × × × × × × INVALID, CK (n-1) would exit self refresh
L H H × × × × Self refresh recovery
L H L H H × × Self refresh recovery
L H L H L × × ILLEGAL
L H L L × × × ILLEGAL
L L × × × × × Maintain self refresh
Self refresh recovery H H H × × × × Idle after tRC
H H L H H × × Idle after tRC
H H L H L × × ILLEGAL
H H L L × × × ILLEGAL
H L H × × × × ILLEGAL
H L L H H × × ILLEGAL
H L L H L × × ILLEGAL
H L L L × × × ILLEGAL
Power down H × × × × × INVALID, CK (n – 1) would exit power down
L H H × × × × EXIT power down → Idle
L H L H H H ×
L L × × × × × Maintain power down mode
All banks idle H H H × × × Refer to operations in Function Truth Table
H H L H × × Refer to operations in Function Truth Table
H H L L H × Refer to operations in Function Truth Table
H H L L L H × CBR (auto) refresh
H H L L L L OPCODE Refer to operations in Function Truth Table
H L H × × × Refer to operations in Function Truth Table
H L L H × × Refer to operations in Function Truth Table
H L L L H × Refer to operations in Function Truth Table
H L L L L H × Self refresh 1
H L L L L L OPCODE Refer to operations in Function Truth Table
L × × × × × × Power down 1
Row active H × × × × × × Refer to operations in Function Truth Table
L × × × × × × Power down 1
Any state other than H H × × × × Refer to operations in Function Truth Table
listed above H L × × × × × Begin clock suspend next cycle 2
L H × × × × × Exit clock suspend next cycle
L L × × × × × Maintain clock suspend
Remark: H: VIH. L: VIL. ×: VIH or VIL
Notes: 1. Self refresh can be entered only from the all banks idle state. Power down can be entered only from all
banks idle or row active state.
2. Must be legal command as defined in Function Truth Table.
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
20
Auto-refresh command [REF]
This command executes auto-refresh. The banks and the ROW addresses to be refreshed are internally determined
by the internal refresh controller. The average refresh cycle is 7.8 µs. The output buffer becomes High-Z after auto-
refresh start. Precharge has been completed automatically after the auto-refresh. The ACT or MRS command can
be issued tRFC after the last auto-refresh command.
Self-refresh entry [SELF]
This command starts self-refresh. The self-refresh operation continues as long as CKE is held Low. During the self-
refresh operation, all ROW addresses are repeated refreshing by the internal refresh controller. A self-refresh is
terminated by a self-refresh exit command.
Power down mode entry [PDEN]
tPDEN (= 1 cycle) after the cycle when [PDEN] is issued. The DDR SDRAM enters into power-down mode. In
power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode
continues while CKE is held Low. No internal refresh operation occurs during the power down mode. [PDEN] do not
disable DLL.
Self-refresh exit [SELFX]
This command is executed to exit from self-refresh mode. 10 cycles (= tSNR) after [SELFX], non-read commands
can be executed. For read operation, wait for 200 cycles (= tSRD) after [SELFX] to adjust Dout timing by DLL. After
the exit, within 7.8 µs input auto-refresh command.
Power down exit [PDEX]
The DDR SDRAM can exit from power down mode tPDEX (1 cycle min.) after the cycle when [PDEX] is issued.
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
21
Simplified State Diagram
PRECHARGE
ROW
ACTIVE
IDLE
IDLE
POWER
DOWN
AUTO
REFRESH
SELF
REFRESH
MODE
REGISTER
SET
ACTIVE
POWER
DOWN
POWER
ON
WRITEA READA
SR ENTRY
SR EXIT
MRS REFRESH
CKE
CKE_
CKE
CKE_ ACTIVE
WRITE READ
BST
WRITE
WITH AP READ
WITH AP
POWER
APPLIED PRECHARGE
AP
READ
WRITE
WITH
AP
READ
WITH
READ
WITH AP
PRECHARGE
PRECHARGE PRECHARGE
*1
READ
Read
WRITE
Write
Automatic transition after completion of command.
Transition resulting from command input.
Note: 1. After the auto-refresh operation, precharge operation is performed automatically
and enter the IDLE state.
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
22
Operation of the DDR SDRAM
Power-up Sequence
The following sequence is recommended for Power-up.
(1) Apply power and attempt to maintain CKE at an LVCMOS low state (all other inputs may be undefined).
Apply VDD before or at the same time as VDDQ.
Apply VDDQ before or at the same time as VTT and VREF.
(2) Start clock and maintain stable condition for a minimum of 200 µs.
(3) After the minimum 200 µs of stable power and clock (CK, /CK), apply NOP and take CKE high.
(4) Issue precharge all command for the device.
(5) Issue EMRS to enable DLL.
(6) Issue a mode register set command (MRS) for "DLL reset" with bit A8 set to high (An additional 200 cycles of
clock input is required to lock the DLL after every DLL reset).
(7) Issue precharge all command for the device.
(8) Issue 2 or more auto-refresh commands.
(9) Issue a mode register set command to initialize device operation.
Command EMRS
PALL MRS REF
2 cycles (min.) 2 cycles (min.)
200 cycles (min)
2 cycles (min.)2 cycles (min.) t
RP
t
RFC
t
RFC
PALL MRS
REF REF
Any
command
DLL enable DLL reset
/CK
CK
Power-up Sequence after CKE Goes High
Mode Register and Extended Mode Register Set
There are two mode registers, the mode register and the extended mode register so as to define the operating
mode. Parameters are set to both through the A0 to the A12 and BA0, BA1 pins by the mode register set command
[MRS] or the extended mode register set command [EMRS]. The mode register and the extended mode register are
set by inputting signal via the A0 to the A12 and BA0, BA1 during mode register set cycles. BA0 and BA1 determine
which one of the mode register or the extended mode register are set. Prior to a read or a write operation, the mode
register must be set.
Remind that no other parameters are shown in the table bellow are allowed to input to the registers.
A2 A1 A0 Burst Length
001 2
010 4
011 8
BT=0 BT=1
2
4
8
A3
0 Sequential
1 Interleave
Burst Type
A6 A5 A4 CAS Latency
010 2
2.5
110
A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0000 0DR LMODE BT BL
A8
0No
1 Yes
DLL Reset
A11 A10A12BA1
0
BA0
0
MRS
Mode Register Set [MRS] (BA0 = 0, BA1 = 0)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
23
A0
0 DLL Enable
1 DLL Disable
DLL Control
A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
000 0 0000 0 0 0 DLL0
A11 A10A12BA1
0
BA0
1
EMRS
Extended Mode Register Set [EMRS] (BA0 = 1, BA1 = 0)
Burst Operation
The burst type (BT) and the first three bits of the column address determine the order of a data out.
A2 A1 A0 Addressing(decimal)
000
001
010
011
111
InterleaveSequence
100
110
101
Starting Ad.
0, 1, 2, 3, 4, 5, 6, 7,
1, 2, 3, 4, 5, 6, 7,
2, 3, 4, 5, 6, 7,
3, 4, 5, 6, 7,
4, 5, 6, 7,
5, 6, 7,
6, 7,
7,
0,
0, 1,
0, 1, 2,
0, 1, 2, 3,
0, 1, 2, 3, 4,
0, 1, 2, 3, 4, 5,
0, 1, 2, 3, 4, 5, 6,
0, 1, 2, 3, 4, 5, 6, 7,
1, 0, 3, 2, 5, 4, 7,
2, 3, 0, 1, 6, 7,
3, 2, 1, 0, 7,
4, 5, 6, 7,
5, 4, 7,
6, 7,
7,
6,
4, 5,
6, 5, 4,
0, 1, 2, 3,
6, 1, 0, 3, 2,
4, 5, 2, 3, 0, 1,
6, 5, 4, 3, 2, 1, 0,
Burst length = 8
A1 A0 Addressing(decimal)
00
01
10
11
InterleaveSequence
Starting Ad.
0, 1, 2, 3,
1, 2, 3, 0,
2, 3, 0, 1,
3, 0, 1, 2,
0, 1, 2, 3,
1, 0, 3, 2,
2, 3, 0, 1,
3, 2, 1, 0,
Burst length = 4
A0 Addressing(decimal)
0
1
InterleaveSequence
Starting Ad.
0, 1,
1, 0, 0, 1,
1, 0,
Burst length = 2
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
24
Read/Write Operations
Bank active
A read or a write operation begins with the bank active command [ACT]. The bank active command determines a
bank address and a row address. For the bank and the row, a read or a write command can be issued tRCD after
the ACT is issued.
Read operation
The burst length (BL), the /CAS latency (CL) and the burst type (BT) of the mode register are referred when a read
command is issued. The burst length (BL) determines the length of a sequential output data by the read command
that can be set to 2, 4, or 8. The starting address of the burst read is defined by the column address, the bank select
address which are loaded via the A0 to A12 and BA0, BA1 pins in the cycle when the read command is issued. The
data output timing are characterized by CL (2 or 2.5) and tAC. The read burst start CL • tCK + tAC (ns) after the
clock rising edge where the read command are latched. The DDR SDRAM output the data strobe through DQS
simultaneously with data. tRPRE prior to the first rising edge of the data strobe, the DQS are driven Low from VTT
level. This low period of DQS is referred as read preamble. The burst data are output coincidentally at both the
rising and falling edge of the data strobe. The DQ pins become High-Z in the next cycle after the burst read
operation completed. tRPST from the last falling edge of the data strobe, the DQS pins become High-Z. This low
period of DQS is referred as read postamble.
out0 out1
out0 out1 out2 out3
out0 out1 out2 out3 out4 out5 out6 out7
CK
/CK
Address
DQS
DQ
BL = 2
BL = 4
BL = 8
Command
CL = 2
BL: Burst length
t1t0 t2 t3 t4 t5 t6 t7 t8
tRCD
tRPRE
tRPST
ACTNOP NOP NOPREAD
;
;
;;
;
Row Column
Read Operation (Burst Length)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
25
CK
/CK
DQS VTT
VTT
VTT
VTT
DQ
DQS
DQ
CL = 2
CL = 2.5
Command
t0 t0.5 t1 t1.5 t2 t2.5 t3 t3.5 t4 t4.5 t5 t5.5
out0 out1 out2 out3
out0 out1 out2 out3
tRPST
tRPRE
tRPST
tAC,tDQSCK
READ NOP
tRPRE
tAC,tDQSCK
Read Operation (/CAS Latency)
Write operation
The burst length (BL) and the burst type (BT) of the mode register are referred when a write command is issued.
The burst length (BL) determines the length of a sequential data input by the write command that can be set to 2, 4,
or 8. The latency from write command to data input is fixed to 1. The starting address of the burst read is defined by
the column address, the bank select address which are loaded via the A0 to A12, BA0 to BA1 pins in the cycle when
the write command is issued. DQS should be input as the strobe for the input-data and DM as well during burst
operation. tWPRE prior to the first rising edge of the DQS should be set to Low and tWPST after the last falling edge
of the data strobe can be set to High-Z. The leading low period of DQS is referred as write preamble. The last low
period of DQS is referred as write postamble.
in1
in0 in1 in2 in3
in0 in1 in2 in3 in4 in5 in6 in7
CK
/CK
Address
DQS
DQ
BL = 2
BL = 4
BL = 8
Command
BL: Burst length
t1t0 t2 t3 t3.5 t4 t5 t6 t7 t8
in0
ACTNOP NOP NOPWRITE
tWPRE
tWPRES
Row Column
tRCD
tWPST
Write Operation
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
26
Burst Stop
Burst stop command during burst read
The burst stop (BST) command is used to stop data output during a burst read. The BST command stops the burst
read and sets the output buffer to High-Z. tBSTZ (= CL) cycles after a BST command issued, the DQ pins become
High-Z. The BST command is not supported for the burst write operation. Note that bank address is not referred
when this command is executed.
CK
/CK
DQS
DQ
DQS
DQ
CL = 2
CL = 2.5
Command
t0 t0.5 t1 t1.5 t2 t2.5 t3 t3.5 t4 t4.5 t5 t5.5
out0 out1
out0 out1
CL: /CAS latency
READ BST NOP
2 cycles
tBSTZ
tBSTZ 2.5 cycles
Burst Stop during a Read Operation
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
27
Auto Precharge
Read with auto-precharge
The precharge is automatically performed after completing a read operation. The precharge starts tRPD (BL/2)
cycle after READA command input. tRCD for READA should be determined so that tRC (ACT to ACT) spec. is
obeyed when READA is issued successively after a bank active command, that is tRCD (READA) ≥ tRC (min.)-tRP
(min.)-tRPD. A column command to the other active bank can be issued the next cycle after the last data output.
Read with auto-precharge command does not limit row commands execution for other bank.
out0 out1 out2 out3
CK
/CK
DQ
Command
tRAS (min) tRP (min)
tRCD (min)
ACT
Note: Internal auto-precharge starts at the timing indicated by " ".
NOP
2 cycles (= BL/2)
READAACT
DQS
tAC,tDQSCK
tRPD
Read with auto-precharge
Write with auto-precharge
The precharge is automatically performed after completing a burst write operation. The precharge operation is
started tWPD (= BL/ 2 + 3) cycles after WRITA command issued. tRCD for WRITA should be determined so that
tRC (ACT to ACT) spec. is obeyed when WRITA is issued successively after a bank active command, that is tRCD
(WRITA) ≥ tRC(min.)-tRP(min.)-tWPD. A column command to the other banks can be issued the next cycle after the
internal precharge command issued. Write with auto-precharge command does not limit row commands execution
for other bank.
;;
in1 in2 in3 in4
CK
/CK
DQ
Command
DM
tRAS (min)
tRCD (min)
;;;
;
tRP
DQS
ACT WRITA ACT
BL/2 + 3 cycles
tWPD
Note: Internal auto-precharge starts at the timing indicated by " ". BL = 4
NOPNOP
Burst Write (BL = 4)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
28
Command Intervals
A Read command to the consecutive Read command Interval
Destination row of the
consecutive read command
Bank
address Row address State Operation
1. Same Same ACTIVE The consecutive read can be performed after an interval of no less than 1 cycle to
interrupt the preceding read operation.
2. Same Different —
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive read command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
3. Different Any ACTIVE The consecutive read can be performed after an interval of no less than 1 cycle to
interrupt the preceding read operation.
IDLE
Precharge the bank without interrupting the preceding read operation. tRP after
the precharge command, issue the ACT command. tRCD after the ACT command,
the consecutive read command can be issued.
;;;
;
;
out
A0 out
A1 out
B0 out
B1 out
B2 out
B3
CK
/CK
Address
BA
DQ
DQS
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
Bank0
Active
;;;
;
;
;
CL = 2
BL = 4
Bank0
NOP
ACT NOP READ
Row Column A
READ
Column B
Column = A
Read Column = B
Read Column = A
Dout Column = B
Dout
READ to READ Command Interval (same ROW address in the same bank)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
29
out
A0 out
A1 out
B0 out
B1 out
B2 out
B3
CK
/CK
Address
BA
DQ
DQS
Command
t1t0 t2 t3 t4 t5 t6 t7 t8 t9
Bank0
Active Bank3
Active Bank0
Read Bank3
Read
Bank0
Dout
CL = 2
BL = 4
NOP
ACT NOP NOP
Row0
ACT READ
Row1 Column A
READ
Column B
Column = A
Read Column = B
Read Bank3
Dout
READ to READ Command Interval (different bank)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
30
A Write command to the consecutive Write command Interval
Destination row of the consecutive write
command
Bank
address Row address State Operation
1. Same Same ACTIVE The consecutive write can be performed after an interval of no less than 1 cycle to
interrupt the preceding write operation.
2. Same Different —
Precharge the bank to interrupt the preceding write operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued. See ‘A write command to the
consecutive precharge interval’ section.
3. Different Any ACTIVE The consecutive write can be performed after an interval of no less than 1 cycle to
interrupt the preceding write operation.
IDLE
Precharge the bank without interrupting the preceding write operation. tRP after
the precharge command, issue the ACT command. tRCD after the ACT command,
the consecutive write command can be issued.
;;
;;
;
inA0 inA1 inB0 inB1 inB2 inB3
CK
/CK
Address
BA
DQ
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
Bank0
Active
;;;
;
;
BL = 4
Bank0
NOP
DQS
ACT NOP WRIT
Row Column A
WRIT
Column B
Column = A
Write Column = B
Write
WRITE to WRITE Command Interval (same ROW address in the same bank)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
31
inA0 inA1 inB0 inB1 inB2 inB3
CK
/CK
Address
BA
DQ
Command
t1t0 t2 t3 t4 t5 t6 t7 t8 t9
Bank0
Active Bank3
Active
Bank0
Write Bank3
Write
BL = 4
Bank0, 3
NOP
DQS
ACT NOP ACT WRIT
Row0 Row1 Column A
WRIT
Column B
WRITE to WRITE Command Interval (different bank)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
32
A Read command to the consecutive Write command interval with the BST command
Destination row of the consecutive write
command
Bank
address Row address State Operation
1. Same Same ACTIVE Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
2. Same Different —
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
3. Different Any ACTIVE Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
IDLE
Precharge the bank independently of the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued.
out0 out1 in0 in1 in2 in3
CK
/CK
DM
DQ
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
BL = 4
CL = 2
DQS
OUTPUT INPUT
tBSTW (≥ tBSTZ)
High-Z
READ WRIT
BST NOP NOP
tBSTZ (= CL)
READ to WRITE Command Interval
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
33
A Write command to the consecutive Read command interval: To complete the burst operation
Destination row of the consecutive read
command
Bank
address Row address State Operation
1. Same Same ACTIVE To complete the burst operation, the consecutive read command should be
performed tWRD (= BL/ 2 + 2) after the write command.
2. Same Different —
Precharge the bank tWRD after the preceding write command. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive read command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
3. Different Any ACTIVE To complete a burst operation, the consecutive read command should be
performed tWRD (= BL/ 2 + 2) after the write command.
IDLE
Precharge the bank independently of the preceding write operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive read command can be issued.
in0 in1 in2 in3 out2
out0 out1
CK
/CK
DM
DQ
Command
t1t0 t2 t3 t4 t5 t6
BL = 4
CL = 2
tWRD (min)
tWTR*
DQS
INPUT OUTPUT
BL/2 + 2 cycle
WRIT NOP NOPREAD
Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR.
WRITE to READ Command Interval
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
34
A Write command to the consecutive Read command interval: To interrupt the write operation
Destination row of the consecutive read
command
Bank
address Row address State Operation
1. Same Same ACTIVE
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
2. Same Different — —*1
3. Different Any ACTIVE
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
IDLE —*
1
Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write
operation in this case.
WRITE to READ Command Interval (Same bank, same ROW address)
in0 in1 in2 out0 out1 out2 out3
CK
/CK
DM
DQ
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
BL = 4
CL= 2
DQS
CL=2
Data masked
1 cycle
READ NOPWRIT
High-Z
High-Z
[WRITE to READ delay = 1 clock cycle]
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
35
in0 in1 in2 in3 out0 out1 out2 out3
CK
/CK
DM
DQ
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
BL = 4
CL= 2
DQS
CL=2
Data masked
2 cycle
READ NOPNOPWRIT
High-Z
High-Z
[WRITE to READ delay = 2 clock cycle]
in0 in1 in2 in3 out0 out1 out2 out3
CK
/CK
DM
DQ
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
BL = 4
CL= 2
DQS
CL=2
Data masked
3 cycle
READWRIT NOP NOP
Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR.
tWTR*
[WRITE to READ delay = 3 clock cycle]
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
36
A Read command to the consecutive Precharge command interval (same bank): To output all data
To complete a burst read operation and get a burst length of data, the consecutive precharge command must be
issued tRPD (= BL/ 2 cycles) after the read command is issued.
out0 out1 out2 out3
CK
/CK
DQ
DQS
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
tRPD = BL/2
READ NOPNOP NOP
PRE/
PALL
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2, BL = 4)
out0 out1 out2 out3
CLK
/CLK
DQ
DQS
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
tRPD = BL/2
READ NOP NOP NOP
PRE/
PALL
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2.5, BL = 4)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
37
READ to PRECHARGE Command Interval (same bank): To stop output data
A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become High-Z tHZP
(= CL) after the precharge command.
out0 out1
CK
/CK
DQ
DQS
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
tHZP
READ
NOP NOP
High-Z
High-Z
PRE/PALL
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2, BL = 2, 4, 8)
out0 out1
CK
/CK
DQ
DQS
Command
t1t0 t2 t3 t4 t5 t6 t7 t8
High-Z
High-Z
tHZP
CL = 2.5
READ
NOP NOP
PRE/PALL
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2.5, BL = 2, 4, 8)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
38
A Write command to the consecutive Precharge command interval (same bank)
The minimum interval tWPD ((BL/ 2 + 3) cycles) is necessary between the write command and the precharge
command.
in0 in1 in2 in3
CK
/CK
DQ
DM
DQS
Command
t1t0 t2 t3 t4 t5 t6 t7
Last data input
tWPD
;
;
;
;;
WRIT NOP NOP
tWR
BL/2 +3 cycles
PRE/PALL
WRITE to PRECHARGE Command Interval (same bank) (BL = 4)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
39
Bank active command interval
Destination row of the consecutive ACT
command
Bank
address Row address
State
Operation
1. Same Any ACTIVE Two successive ACT commands can be issued at tRC interval. In between two
successive ACT operations, precharge command should be executed.
2. Different Any ACTIVE Precharge the bank. tRP after the precharge command, the consecutive ACT
command can be issued.
IDLE tRRD after an ACT command, the next ACT command can be issued.
CK
/CK
Command
BA
tRC
Address
ACTV
tRRD
Bank0
Active Bank3
Active Bank0
Precharge Bank0
Active
PRE ACT
ROW: 0
NOP NOPNOPACTACT
ROW: 1ROW: 0
Bank Active to Bank Active
Mode register set to Bank-active command interval
The interval between setting the mode register and executing a bank-active command must be no less than tMRD.
CK
/CK
Command
Address
NOP NOPMRS ACT
tMRD
Mode Register Set Bank3
Active
CODE BS and ROW
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
40
DM Control
DM can mask input data. By setting DM to Low, data can be written. When DM is set to High, the corresponding
data is not written, and the previous data is held. The latency between DM input and enabling/disabling mask
function is 0.
Mask Mask
DQS
DQ
DM
t1 t2 t3 t4 t5 t6
Write mask latency = 0
DM Control
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
41
Timing Waveforms
Command and Addresses Input Timing Definition
CK
/CK
VREF
Command
(/RAS, /CAS,
/WE, /CS)
Address
tIS
tIS
tIH
tIH
;;
;
;
;;
;;
;
VREF
Read Timing Definition
/CK
CK
DQS
DQ
(Dout)
tLZ tAC
tQH
tAC
tRPRE tDQSCK tDQSCK tDQSCK
tQH tQH
tDQSQ tDQSQ
tHZ
tQH
tCK
tCH tCL tDQSCK
tDQSQ
tDQSQ
tDQSCK tDQSCK tRPST
tAC
tAC
tQH
Write Timing Definition
/CK
CK
DQS
DM
VREF
VREF
VREF
DQ
(Din)
tDS tDH
tDQSS
tWPRE
tWPRES
tDS tDH
tDIPW
tDIPW tDIPW
tCK
tDSH tDSStDSS
tDQSL tDQSH tWPST
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
42
Read Cycle
Bank 0
Active Bank 0
Read Bank 0
Precharge CL = 2
BL = 4
Bank0 Access
= VIH or VIL
Bank 0
Active Bank 0
Read Bank 0
Precharge
tIS tIH
tCH
tCK
tCL
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS
tRPRE
tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
/RAS
A10
Address
High-Z
High-Z
/CS
CKE
CK
/CK
/CAS
/WE
BA
DQS
DQ (output)
DM
VIH
tRCD tRAS tRP
tRC
tRPST
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
43
Write Cycle
Bank 0
Active CL = 2
BL = 4
Bank0 Access
= VIH or VIL
Bank 0
Active Bank 0
Write Bank 0
Precharge
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
VIH
tRCD tRAS
tRC
tRP
tWR
/CS
CK
/CK
CKE
/RAS
/CAS
/WE
BA
A10
Address
DQ (input)
DM
DQS
(input)
tCK
tCH tCL
tDS
tDS
tDS
tDH
tDH
tDH
tDQSH
tDQSL tWPSTtDQSS
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
44
Mode Register Set Cycle
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
/CK
CK
CKE
/CS
/RAS
/CAS
/WE
BA
Address
DM
DQ (output) b
valid code
code
tRP
Precharge
If needed Mode
register
set
Bank 3
Active Bank 3
Read
R: b C: b
VIH
Bank 3
Precharge
tMRD
High-Z
High-Z
CL = 2
BL = 4
= VIH or VIL
DQS
Read/Write Cycle
;;
;;
;
;
;
;
;
;
;
;
;
;
;
;
;
R:a C:a C:bR:b C:b''
;
;
;
;;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;;
b’’
Bank 0
Active Bank 3
Active
Bank 0
Read Bank 3
Read
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
CKE
/RAS
/CS
DQS
/CAS
/WE
Address
CK
BA
DQ (output)
DQ (input)
/CK
Bank 3
Write
tWRD
High-Z
VIH
tRWD
;
;
;
b
Read cycle
CL = 2
BL = 4
=VIH or VIL
;
DM
;
;
;
a
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
45
Auto Refresh Cycle
;
;
;
;;
;
;;
;
;
;
;;
;
;
;
;
;
;
;;
;
;
;
;;
;
;;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
Precharge
If needed Auto
Refresh Bank 0
Active Bank 0
Read
;
;
;
/CK
CK
CKE
/CS
/CAS
/WE
BA
Address
DM
DQ (output)
DQ (input)
/RAS
;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;;;
;
;
;
;;
;
;;
CL = 2
BL = 4
= VIH or VIL
;
;
VIH
tRP
A10=1
R: b C: b
b
High-Z
tRFC
DQS
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
46
Self Refresh Cycle
Self
refresh
entry
Self refresh
exit
High-Z
/CK
CKE
/CS
/RAS
/CAS
/WE
BA
Address
DM
DQ (output)
DQ (input)
CK
Precharge
If needed Bank 0
Active Bank 0
Read
tRP tSNR
A10=1
R: b C: b
DQS
CL = 2.5
BL = 4
= VIH or VIL
tIS tIH
CKE = low
tSRD
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
47
Package Drawing
0.10
0.65
66 34
133
22.22 ± 0.10
1.0 ± 0.05
1.20 max
10.16
0 to 8°
0.91 max.
0.09 to 0.20
0.17 to 0.32
0.10
0.60 ± 0.15
0.80
Nom 0.25
+0.08
−0.05
11.76 ± 0.20
ECA-TS2-0029-01
Note: This dimension does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or
gate burrs shall not exceed 0.20mm per side.
A
PIN#1 ID
S
0.13
MSAB
Unit: mm
B
*
1
S
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
48
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDD51XXAB.
Type of Surface Mount Device
EDD51XXABTA: 66-pin Plastic TSOP (II)
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
49
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to V
DD
or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
EDD5104AB, EDD5108AB
Preliminary Data Sheet E0237E10 (Ver. 1.0)
50
M01E0107
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
