PD -2.451 rev. B 03/99
Reduced RFI and EMI
 Reduced Snubbing
 Extensive Characterization of
Recovery Parameters
Features
Description
HEXFREDTM
diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery DiodeHEXFREDTM
HFA180NH40R
HALF-PAK
da
BASE ANODE
LUG
TERMINAL
CATHODE
VR = 400V
VF(typ.) = 1.1V
IF(AV) = 180A
Qrr (typ.) = 420nC
IRRM(typ.) = 8.7A
trr(typ.) = 45ns
di(rec)M/dt (typ.) = 280A/µs
Thermal - Mechanical Characteristics
Absolute Maximum Ratings (per Leg)
lbfin
(Nm)
°C/W
K/W
Parameter Min. Typ. Max. Units
RthJC Junction-to-Case   0.20
RthCS Case-to-Sink, Flat, Greased Surface  0.15 
Wt Weight  26 (0.9)  g (oz)
Mounting Torque 15 (1.7)  25 (2.8)
Terminal Torque 30 (3.4)  40 (4.6)
Vertical Pull   80
2 inch Lever Pull   40
Parameter Max. Units
VRCathode-to-Anode Voltage 400 V
IF @ TC = 25°C Continuous Forward Current 280
IF @ TC = 100°C Continuous Forward Current 138
IFSM Single Pulse Forward Current 1200
EAS Non-Repetitive Avalanche Energy 1.4 mJ
PD @ TC = 25°C Maximum Power Dissipation 521
PD @ TC = 100°C Maximum Power Dissipation 208
TJOperating Junction and
TSTG Storage Temperature Range -55 to +150
W
A
°C
lbfin
Note: Limited by junction temperature Mounting surface must be smooth, flat, free or burrs or other
L = 100µH, duty cycle limited by max TJprotrusions. Apply a thin even film or thermal grease to mounting
125°C surface. Gradually tighten each mounting bolt in 5-10 lbfin steps
until desired or maximum torque limits are reached. Module
1
HFA180NH40R
2
PD-2.451 rev. B 03/99
30.40 (1.197)
29.90 (1.177)
18.42 (0.725)
19.69 (0.775)
12.83 (0.505)
12.57 (0.495) DIA.
4.11 (0.162)
3.86 (0.152)
19.18 (0.755)
18.92 (0.745) SQ.
13.59 (0.535)
14.10 (0.555) 15.75 (0.620)
14.99 (0.590)
3.05 (0.120)
3.30 (0.130)
38.61 (1.520)
39.62 (1.560)
DIA.
3.86 (0.152)
4.11 (0.162)
1/4-20 UNC-2B
Dimensions in m illimete rs and inches
1
2
H P
ALF- AK
LEAD ASSIGNMEN T S
1 - CATHODE
2 - ANODE
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 400   V IR = 100µA
VFM Max Forward Voltage  1.10 1.35 IF = 180A
 1.40 1.65 V IF = 360A
 1.10 1.30 IF = 180A, TJ = 125°C
IRM Max Reverse Leakage Current  2.0 12 µA VR = VR Rated
 3.0 16 mA TJ = 125°C, VR = 320V
CTJunction Capacitance  370 500 pF VR = 200V
From top of terminal hole to mounting
plane
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
A/µs
nC
A
LSSeries Inductance  5.0  nH
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time  45  IF = 1.0A, dif /dt = 200A/µs, VR = 30V
trr1 See Fig. 5  90 140 ns TJ = 25°C
trr2  290 440 TJ = 125°C IF = 180A
IRRM1 Peak Recovery Current  8.7 20 TJ = 25°C
IRRM2 See Fig. 6  18 30 TJ = 125°C VR = 200V
Qrr1 Reverse Recovery Charge  420 1100 TJ = 25°C
Qrr2 See Fig. 7  2600 7000 TJ = 125°C dif /dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current  300  TJ = 25°C
di(rec)M/dt2 During tb See Fig. 8  280  TJ = 125°C
See Fig. 1
See Fig. 2
See Fig. 3
HFA180NH40R
3
PD-2.451 rev. B 03/99
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
0.1
1
10
100
1000
10000
100000
0 100 200 300 400
R
R
Reverse Voltage - V (V)
T = 150 °C
Reverse Current - I (µA)
T = 12 5°C
T = 25°C
J
J
J
1
10
100
1000
0.4 0.8 1.2 1.6 2.0
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 15 0°C
T = 125°C
T = 25°C
J
J
J
100
1000
10000
1 10 100 1000
T = 25°C
J
Reverse Voltage - V (V)
R
T
Junction Capacitance - C (pF)
A
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
1
thJC
t , Rectang ul ar Pu l se D ur ation (S econd s)
D = 0.50
D = 0.33
D = 0 .25
D = 0.1 7
D = 0.08
Single P ulse
(Thermal Resistance)
Thermal Impe dan ce - Z (K/W)
2
t
1
t
P
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
JDMthJCC
21
HFA180NH40R
4
PD-2.451 rev. B 03/99
Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt
0
100
200
300
400
500
100 1000
f
di /dt - (A/µs)
t - (ns)
rr
V = 200V
T = 125°C
T = 25°C
R
J
J
I = 200A
F
I = 70 A
F
I = 180A
F
1
10
100
100 1000
f
di /dt - (A/µs)
I - (A)
IRRM
I = 7 0A
I = 20 0A
I = 18 0A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
F
0
2000
4000
6000
100 1000
f
di /dt - (A/µs)
RR
Q - (nC)
I = 7 0A
I = 200A
I = 180A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
F
100
1000
10000
100 1000
f
di /dt - (A/µs)
di(rec)M/dt - (A/µs)
I = 7 0A
I = 200A
I = 180A
V = 200 V
T = 125°C
T = 2 5°C
R
J
J
F
F
F
HFA180NH40R
5
PD-2.451 rev. B 03/99
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
V
(AVAL)
R(RATED)
I
L(PK)
V
DECAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 2 00V
R
0.01
Ω
G
D
S
dif/dt
ADJUST
CURRENT
MONITOR
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm +
FREE-WHEEL
DIODE
Vd = 50V
L = 100µH
http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.
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