MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2
January 2009
MCT2M, MCT2EM, MCT210M, MCT271M
Phototransistor Optocouplers
Features
■
UL recognized (File # E90700, Vol. 2)
■
IEC60747-5-2 recognized (File # 102497)
– Add option V (e.g., MCT2VM)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Description
The MCT2XXM series optoisolators consist of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 6-pin dual in-line package.
Schematic Package Outlines
Cathode 2
Anode 1
No Connection 3
5 Collector
6 Base
4 Emitter
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 2
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
Storage Temperature -40 to +150 °C
T
OPR
Operating Temperature -40 to +100 °C
T
SOL
Lead Solder Temperature 260 for 10 sec °C
P
D
Total Device Power Dissipation @ T
A
= 25°C 250 mW
Derate above 25°C 2.94 mW/°C
EMITTER
I
F
DC/Average Forward Input Current 60 mA
V
R
Reverse Input Voltage 3 V
I
F
(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A
P
D
LED Power Dissipation @ T
A
= 25°C 120 mW
Derate above 25°C 1.41 mW/°C
DETECTOR
I
C
Collector Current 50 mA
V
CEO
Collector-Emitter Voltage 30 V
P
D
Detector Power Dissipation @ T
A
= 25°C 150 mW
Derate above 25°C 1.76 mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 3
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
*All typical T
A
= 25°C
Isolation Characteristics
*All typicals at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Units
EMITTER
V
F
Input Forward Voltage I
F
= 20mA MCT2M
MCT2EM
MCT271M
1.25 1.50 V
T
A
= 0°C–70°C, I
F
= 40mA MCT210M 1.33
I
R
Reverse Leakage
Current
V
R
= 3.0V MCT2M
MCT2EM
MCT271M
0.001 10 µA
T
A
= 0°C–70°C, V
R
= 6.0V MCT210M
DETECTOR
BV
CEO
Collector-Emitter
Breakdown Voltage
I
C
= 1.0mA, I
F
= 0 ALL 30 100 V
T
A
= 0°C–70°C MCT210M
BV
CBO
Collector-Base
Breakdown Voltage
I
C
= 10µA, I
F
= 0 MCT2M
MCT2EM
MCT271M
70 120 V
T
A
= 0°C–70°C MCT210M 30
BV
ECO
Emitter-Collector
Breakdown Voltage
I
E
= 100µA, I
F
= 0 MCT2M
MCT2EM
MCT271M
710 V
T
A
= 0°C–70°C MCT210M 6 10
I
CEO
Collector-Emitter Dark
Current
V
CE
= 10V, I
F
= 0 ALL 1 50 nA
V
CE
= 5V, T
A
= 0°C–70°C 30 µA
I
CBO
Collector-Base Dark
Current
V
CB
= 10V, I
F
= 0 ALL 20 nA
C
CE
Capacitance V
CE
= 0V, f = 1MHz ALL 8 pF
Symbol Parameter Test Conditions Min Typ* Max Units
V
ISO
Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk)
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω
C
ISO
Isolation Capacitance 0.2 2 pF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 4
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Electrical Characteristics
(Continued)
(T
A
= 25°C unless otherwise specified)
Transfer Characteristics
*All typicals at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR Output Collector
Current
T
A
= 0°C–70°C MCT210M 150 %
I
F
= 10mA, V
CE
= 10V MCT2M
MCT2EM
20
MCT271M 45 90
I
F
= 3.2mA to 32mA,
V
CE
= 0.4V, T
A
= 0°C–70°C
MCT210M 50
V
CE(SAT)
Collector-Emitter
Saturation Voltage
I
C
= 2mA, I
F
= 16mA MCT2M
MCT2EM
MCT271M
0.4 V
I
C
= 16mA, I
F
= 32mA,
T
A
= 0°C–70°C
MCT210M
AC CHARACTERISTICS
t
on
AC Characteristic Saturated
Turn-on Time from 5V to 0.8V
I
F
= 15mA, V
CC
= 5V,
R
L
= 2k
Ω
, R
B
= Open (Fig. 11)
MCT2M
MCT2EM
1.1 µs
I
F
= 20mA, V
CC
= 5 V,
R
L
= 2k
Ω
, R
B
= 100k
Ω
) (Fig. 11)
MCT2M
MCT2EM
1.3
t
off
Saturated Turn-off Time from
SAT to 2.0 V
I
F
= 15mA, V
CC
= 5V,
R
L
= 2k
Ω
, R
B
= Open (Fig. 11)
MCT2M
MCT2EM
50 µs
I
F
= 20mA, V
CC
= 5V,
R
L
= 2k
Ω
, R
B
= 100k
Ω
(Fig. 11)
MCT2M
MCT2EM
20
t
on
Turn-on Time I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
MCT2M
MCT2EM
2µs
t
off
Turn-off Time I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
MCT2M
MCT2EM
2µs
t
r
Rise Time I
F
= 10mA, V
CC = 10V,
RL = 100ΩMCT2M
MCT2EM
2µs
tfFall Time IF = 10mA, VCC = 10V,
RL = 100ΩMCT2M
MCT2EM
1.5 µs
ton Saturated turn-on time IF = 16mA, RL = 1.9kΩ,
VCC = 5V (Fig. 11)
MCT271M 1.0 µs
toff Saturated turn-off time
(Approximates a typical
TTL interface)
48 µs
ton Saturated turn-on time IF = 16mA, RL = 4.7kΩ,
VCC = 5 V (Fig. 20)
MCT271M 1.0 µs
toff Saturated turn-off time
(Approximates a typical
low power TTL interface)
98 µs
trSaturated rise time IF = 16mA, RL = 560Ω,
VCC = 5V) (Fig. 11, 12)
MCT210M 1.0 µs
tfSaturated fall time 11 µs
TPD (HL) Saturated propagation
delay – HIGH to LOW
IF = 16mA, RL = 2.7kΩ
(Fig. 11, 12)
MCT210M 1.0 µs
TPD (LH) Saturated propagation
delay – LOW to HIGH
50 µs
trNon-saturated rise time IC = 2mA, VCC = 5V,
RL = 100Ω (Fig. 11)
MCT210M 2 µs
tfNon-saturated fall time 2 µs
ton Non-saturated turn-on time IC = 2mA, VCC = 5V,
RL = 100Ω (Fig. 20)
MCT271M 2 7 µs
toff Non-saturated turn-off time 2 7 µs
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 5
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Typical Performance Curves
Fig. 2 Normalized CTR vs. Forward Current
IF – FORWARD CURRENT (mA)
02468101214161820
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0V
TA = 25°C
Normalized to
IF = 10mA
Fig. 3 Normalized CTR vs. Ambient Temperature
TA – AMBIENT TEMPERATURE (°C)
-60 -40 -20 0 20 40 60 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5mA
IF = 10mA
IF = 20mA
Normalized to
IF = 10mA
TA = 25°C
IF – LED FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = 55°C
TA = 100°C
Fig. 5 CTR vs. RBE (Saturated)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20mA
IF = 10mA
IF = 5mA
VCE= 0.3V
Fig. 4 CTR vs. RBE (Unsaturated)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5.0V
IF = 20mA
IF = 10mA
IF = 5mA
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
IF = 5mA
IF = 20mA
IF = 10mA
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
IC – COLLECTOR CURRENT (mA)
VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V)
IF = 2.5mA
TA = 25°
C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 6
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Typical Performance Curves (Continued)
NORMALIZED t
on
– (t
on(R
BE
)
/ t
on(open)
)
Fig. 8 Normalized t
on
vs. R
BE
RBE – BASE RESISTANCE (kΩ)
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10V
IC = 2mA
RL = 100Ω
SWITCHING SPEED (µs)
Fig. 7 Switching Speed vs. Load Resistor
R – LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
Toff
IF = 10mA
VCC = 10V
TA = 25°C
Tr
Ton
Tf
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10V
IC = 2mA
RL = 100Ω
NORMALIZED t
off
– (t
off(R
BE
)
/ t
off(open)
)
10 100 1000 10000 100000
RBE – BASE RESISTANCE (kΩ)
Fig. 9 Normalized t
off
vs. R
BE
Fig. 10 Dark Current vs. Ambient Temperature
TA – AMBIENT TEMPERATURE
(˚C)
020406080100
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
10000
VCE = 10 V
TA = 25
˚C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 7
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Typical Electro-Optical Characteristics
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
trtf
INPUT
IF RL
RBE
VCC = 10V
OUTPUT
ton
10%
90%
toff
Figure 11. Switching Time Test Circuit and Waveforms
Figure 12. Switching Time Waveforms (MCT210M)
IC
Adjust IF to produce IC = 2mA
OUTPUT
(SATURATED)
INPUT
5 V
1.5 V
TPDHL TPDLH
1.5 V
SAT
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 8
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 9
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Ordering Information
Marking Information
Option
Order Entry Identifier
(Example) Description
No suffix MCT2M Standard Through Hole Device (50 units per tube)
S MCT2SM Surface Mount Lead Bend
SR2 MCT2SR2M Surface Mount; Tape and Reel (1,000 units per reel)
T MCT2TM 0.4" Lead Spacing
V MCT2VM IEC60747-5-2
TV MCT2TVM IEC60747-5-2, 0.4" Lead Spacing
SV MCT2SVM IEC60747-5-2, Surface Mount
SR2V MCT2SR2VM IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel)
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with
date code ‘325’ or earlier are marked in portrait format.
Definitions
1Fairchild logo
2Device number
3 VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘7’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
MCT2
V X YY Q
1
2
6
43 5
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 10
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Carrier Tape Specification
Reflow Profile
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2 11
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Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I38
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers