BC556 thru BC558 Small Signal Transistors (PNP) TO-226AA (TO-92) Features * PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. * These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC556 is available in groups A and B, however, the types BC557 and BC558 can be supplied in all three groups. As complementary types, the NPN transistors BC546...BC548 are recommended. * On special request, these transistors are also manufactured in the pin configuration TO-18. 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Mechanical Data max. 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Ratings at 25C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Base Voltage BC556 BC557 BC558 -VCBO 80 50 30 V Collector-Emitter Voltage BC556 BC557 BC558 -VCES 80 50 30 V Collector-Emitter Voltage BC556 BC557 BC558 -VCEO 65 45 30 V -VEBO 5 V -IC 100 mA Peak Collector Current -ICM 200 mA Peak Base Current -IBM 200 mA IEM 200 mA Emitter-Base Voltage Collector Current Peak Emitter Current Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Ptot RJA (1) mW (1) C/W 500 250 Junction Temperature Tj 150 C Storage Temperature Range TS -65 to +150 C Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. 1/24/01 BC556 thru BC558 Small Signal Transistors (PNP) Electrical Characteristics (T Parameter Current gain group Small Signal Current Gain Current gain group Input Impedance Current gain group Output Admittance Current gain group Reverse Voltage Transfer Ratio Current gain group Current gain group DC Current Gain Current gain group J = 25C unless otherwise noted) Symbol Test Condition Min Typ Max Unit A B C hfe -VCE = 5V, -IC = 2mA, f = 1 kHz -- -- -- 220 330 600 -- -- -- -- A B C hie -VCE = 5V, -IC = 2mA, f = 1kHz 1.6 3.2 6 2.7 4.5 8.7 4.5 8.5 15 k A B C hoe -VCE = 5V, -IC = 2mA, f = 1kHz -- -- -- 18 30 60 30 60 110 S hre -VCE = 5V, -IC = 2mA, f = 1kHz -- -- -- 1.5 * 10-4 2 * 10-4 3 * 10-4 -- -- -- -- -VCE = 5V, -IC = 10A -- -- -- 90 150 270 -- -- -- -VCE = 5V, -IC = 2mA 110 200 420 180 290 500 220 450 800 -VCE = 5V, -IC = 100mA -- -- -- 120 200 400 -- -- -- A B C A B C A B C hFE A B C -- Collector Saturation Voltage -VCEsat -IC = 10mA, -IB = 0.5mA -IC = 100mA, -IB = 5mA -- -- 80 250 300 650 mV Base Saturation Voltage -VBEsat -IC = 10mA, -IB = 0.5mA -IC = 100mA, -IB = 5mA -- -- 700 900 -- -- mV -VBE -VCE = 5V, -IC = 2mA -VCE = 5V, -IC = 10mA 600 -- 660 -- 750 800 mV -ICES -VCE = 80V -VCE = 50V -VCE = 30V -VCE = 80V, Tj = 125C -VCE = 50V, Tj = 125C -VCE = 30V, Tj = 125C -- -- -- -- -- -- 0.2 0.2 0.2 -- -- -- 15 15 15 4 4 4 nA nA nA A A A fT -VCE = 5V, -IC = 10mA, f = 100MHz -- 150 -- MHz CCBO -VCB = 10V, f = 1MHz -- -- 6 pF F -VCE = 5V, -IC = 200A, RG = 2k, f = 1kHz, f = 200Hz -- 2 10 dB Base-Emitter Voltage BC556 BC557 BC558 BC556 BC557 BC558 Collector-Emitter Cutoff Current Gain-Bandwidth Product Collector-Base Capacitance Noise Figure BC556, BC557, BC558 BC556 thru BC558 Small Signal Transistors (PNP) Ratings and Characteristic Curves (T A = 25C unless otherwise noted) C BC556 thru BC558 Small Signal Transistors (PNP) Ratings and Characteristic Curves (T A = 25C unless otherwise noted) Relative h-parameters versus collector current 10 2 6 he (-IC) 4 he (-IC = 2 mA) 2 hie 10 6 4 2 hre 1 6 hfe 4 2 10 -1 10 -1 -VCE = 5 V Tamb = 25C hoe 2 4 1 2 4 -IC 10 mA BC556 thru BC558 Small Signal Transistors (PNP) Ratings and Characteristic Curves (T A = 25C unless otherwise noted)