SMBTA42
Nov-30-20011
NPN Silicon Transistor for High Voltages
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
SMBTA42 s1D 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
VCEO 300
Collector-base voltage VCBO 300
VEBO 6Emitter-base voltage mA500
IC
DC collector current
Base current IB100
Total power dissipation, TS = 102 °C Ptot 360 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
210 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
SMBTA42
Nov-30-20012
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 300 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 V(BR)CBO 300 - -
Emitter-base breakdown voltage
IE = 100 µA, IC = 0 V(BR)EBO 6 - -
Collector cutoff current
VCB = 200 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 200 V, IE = 0 , TA = 150 °C ICBO - - 20 µA
Emitter cutoff current
VEB = 3 V, IC = 0 IEBO - - 100 nA
DC current gain 1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA VCEsat - - 0.5 V
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA VBEsat - - 0.9
AC Characteristics
fT50Transition frequency
IC = 10 mA, VCE = 20 V, f = 100 MHz - - MHz
4 pFCollector-base capacitance
VCB = 20 V, f = 1 MHz -
Ccb -
1) Pulse test: t < 300
s; D < 2%
SMBTA42
Nov-30-20013
Transition frequency fT = f (IC)
VCE = 10V, f =100MHz
EHP00839SMBTA 42/43
10
MHz
10 10 mA
f
C
1010
T
555
Ι
0123
10
3
2
10
1
5
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
40
80
120
160
200
240
280
320
mW
400
P
tot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00840SMBTA 42/43
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
Operating range IC = f (VCEO)
TA = 25°C, D = 0
EHP00841SMBTA 42/43
10
10 V
CEO
10
C
10
3
1
10
-1
5
10 10
10
0
5
Ι
V
mA
5
10
2
0123
555
10
100
1
100
500
DC
µ
µ
ms
ms
ms
s
s
SMBTA42
Nov-30-20014
Collector current IC = f (VBE)
VCE = 10V
EHP00843SMBTA 42/43
10
0V
BE
1.5
mA
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
5
10
2
Collector cutoff current ICBO = f (TA)
VCB = 160V
EHP00842SMBTA 42/43
10
0C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
DC current gain hFE = f (IC)
VCE = 10V
EHP00844SMBTA 42/43
10
10 mA
h
C
10
5
FE
10
3
1
10
0
5
10 10 10
-1 0 1 2 3
Ι
5
10
2
555
