V
RRM
= 50 V - 1000 V
I
F
= 12 A
Features
• High Surge Capability DO-4 Package
• Types up to 1000 V V
RRM
Parameter Symbol 1N1199 (R) 1N1200 (R
)
1N1204 (R) 1N1206 (R
)
Unit
Repetitive peak reverse
V
50
100
400
600
V
1N1199A thru 1N1206AR
200
1N1202 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
y
Diode
Conditions
voltage
V
RRM
50
100
400
600
V
RMS reverse voltage V
RMS
35 70 280 420 V
DC blocking voltage V
DC
50 100 400 600 V
Continuous forward current I
F
12 12 12 12 A
Operating temperature T
j
-65 to 200 -65 to 200 -65 to 200 -65 to 200 °C
Storage temperature T
stg
-65 to 200 -65 to 200 -65 to 200 -65 to 200 °C
Parameter Symbol 1N1199 (R) 1N1200 (R
)
1N1204 (R) 1N1206 (R
)
Unit
Diode forward voltage 1.1 1.1 1.1 1.1
10 10 10 10 μA
15 15 15 15 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
2.00 2.00 2.00 2.00 °C/W
200
A
Reverse current I
R
V
F
240 240 240
-65 to 200
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
V
R
= 50 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
200
140
240 240
-65 to 200
12
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
10
1N1202 (R)
2.00
V
R
= 50 V, T
j
= 175 °C
1.1 V
15
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1N1199A thru 1N1206AR
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