MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features * Pb-Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 40 Vdc Collector -Base Voltage VCBO 60 Vdc Emitter -Base Voltage VEBO 6.0 Vdc IC 200 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MARKING DIAGRAM 3 1 1AM 2 SOT-23 (TO-236) CASE 318 Style 6 1AM = Specific Device Code ORDERING INFORMATION Device Package Shipping MMBT3904LT1 SOT-23 3000 / Tape & Reel MMBT3904LT1G SOT-23 3000 / Tape & Reel MMBT3904LT3 SOT-23 10000 / Tape & Reel MMBT3904LT3G SOT-23 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 February, 2004 - Rev. 5 1 Publication Order Number: MMBT3904LT1/D MMBT3904LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector -Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 - Vdc Collector -Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 - Vdc Emitter -Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 - Vdc IBL - 50 nAdc ICEX - 50 nAdc 40 70 100 60 30 - - 300 - - - - 0.2 0.3 0.65 - 0.85 0.95 fT 300 - MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo - 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) OFF CHARACTERISTICS Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 3) HFE DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Cibo - 8.0 pF Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 k ohms Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10- 4 Small -Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 - Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mhos Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF - 5.0 dB (VCC = 3.0 Vdc, VBE = - 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) td - 35 tr - 35 (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts - 200 tf - 50 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 s 275 t1 DUTY CYCLE = 2% 10 k +3 V +10.9 V 275 10 k 0 -0.5 V CS < 4 pF* < 1 ns 1N916 -9.1 V CS < 4 pF* < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 2 MMBT3904LT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 7.0 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) VCC = 40 V IC/IB = 10 3000 Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 70 50 20 30 40 1.0 2.0 3.0 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance IC/IB = 10 50 70 100 200 t r, RISE TIME (ns) tr @ VCC = 3.0 V 50 30 20 40 V 15 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 30 20 7 5 200 5.0 7.0 10 20 30 50 70 100 Figure 5. Turn -On Time Figure 6. Rise Time IC/IB = 10 IC/IB = 10 IC/IB = 20 100 70 50 10 7 5 7 5 20 30 50 70 100 200 IC/IB = 10 30 20 10 5.0 7.0 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 30 20 200 500 ts = ts - 1/8 tf IB1 = IB2 50 2.0 3.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 100 70 1.0 1.0 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 20 100 70 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 t f , FALL TIME (ns) TIME (ns) 100 70 10 t s , STORAGE TIME (ns) 30 500 300 200 300 200 20 Figure 4. Charge Data 500 7 5 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 3 200 MMBT3904LT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 SOURCE RESISTANCE = 500 IC = 100 A 2 0 0.1 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Figure 10. 40 100 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 5.0 10 Figure 12. Output Admittance 20 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 4 MMBT3904LT1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25C VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55 C TO +25C -0.5 -55 C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 5 180 200 MMBT3904LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AH A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. 3 1 V B S 2 DIM A B C D G H J K L S V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches Figure 19. SOT-23 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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