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1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small
and flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
nAverage forward current: IF(AV) ≤0.2 A
nReverse voltage: VR≤30 V
nLow reverse current: IR≤30 µA
nAEC-Q101 qualified
nUltra small and flat lead SMD plastic package
1.3 Applications
nLow current rectification
nHigh efficiency DC-to-DC conversion
nSwitch Mode Power Supply (SMPS)
nReverse polarity protection
nLow power consumption applications
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp≤300 µs; δ≤0.02.
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
Rev. 01 — 6 October 2009 Product data sheet
Table 1. Quick reference data
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward current square wave;
δ= 0.5;
f=20kHz
Tamb ≤120 °C[1] - - 0.2 A
Tsp ≤140 °C - - 0.2 A
IRreverse current VR= 10 V - 2.5 30 µA
VRreverse voltage - - 30 V
VFforward voltage IF= 0.2 A [2] - 420 500 mV
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 2 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode [1]
2 anode 21
sym001
12
Table 3. Ordering information
Type number Package
Name Description Version
RB521S30 SC-79 plastic surface-mounted package; 2 leads SOD523
Table 4. Marking codes
Type number Marking code
RB521S30 ZB
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage Tj=25°C - 30 V
IF(AV) average forward current square wave;
δ= 0.5;
f=20kHz
Tamb ≤120 °C[1] - 0.2 A
Tsp ≤140 °C - 0.2 A
IFSM non-repetitive peak
forward current tp= 8.3 ms
half sine wave;
JEDEC method
[2] -1A
Ptot total power dissipation Tamb ≤25 °C[3][4] - 275 mW
[3][1] - 420 mW
[3][5] - 500 mW
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 3 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Tj=25°C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
Tjjunction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2]
[3] - - 455 K/W
[4] - - 300 K/W
[5] - - 250 K/W
Rth(j-sp) thermal resistance from
junction to solder point [6] --90K/W
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 4 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab710
tp (s)
10−3102103
10110−210−1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
006aab711
tp (s)
10−3102103
10110−210−1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1
0.05
0.02
0.01
0
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 5 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
7. Characteristics
[1] Pulse test: tp≤300 µs; δ≤0.02.
Table 7. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage [1]
IF= 0.1 mA - 130 190 mV
IF= 1 mA - 190 250 mV
IF= 10 mA - 255 300 mV
IF= 100 mA - 355 410 mV
IF= 200 mA - 420 500 mV
IRreverse current VR= 10 V - 2.5 30 µA
Cddiode capacitance f = 1 MHz; VR=1V- 2025pF
(1) Tj= 150 °C
(2) Tj= 125 °C
(3) Tj=85°C
(4) Tj=25°C
(5) Tj=−40 °C
(1) Tj= 125 °C
(2) Tj=85°C
(3) Tj=25°C
(4) Tj=−40 °C
Fig 3. Forward current as a function of forward
voltage; typical values Fig 4. Reverse current as a function of reverse
voltage; typical values
006aab712
10−2
10−3
1
10−1
10
IF
(A)
10−4
VF (V)
0.0 1.00.80.4 0.60.2
(1)
(2)
(3) (4) (5)
006aab713
VR (V)
0302010
10−2
10−3
10−4
10−5
10−6
10−7
10−8
IR
(A)
10−9
(1)
(2)
(3)
(4)
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 6 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
f = 1 MHz; Tamb =25°CT
j= 150 °C
(1) δ= 0.1
(2) δ= 0.2
(3) δ= 0.5
(4) δ=1
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Average forward power dissipation as a
function of average forward current; typical
values
Tj= 125 °C
(1) δ=1
(2) δ= 0.9
(3) δ= 0.8
(4) δ= 0.5
FR4 PCB, standard footprint
Tj= 150 °C
(1) δ= 1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
Fig 7. Average reverse power dissipation as a
function of reverse voltage; typical values Fig 8. Average forward current as a function of
ambient temperature; typical values
VR (V)
0302010
006aab714
35
Cd
(pF)
0
5
10
15
20
25
30
IF(AV) (A)
0.0 0.30.20.1
006aab715
0.05
0.10
0.15
PF(AV)
(W)
0.0
(1)
(2)
(3)
(4)
VR (V)
0252010 155
006aab716
0.175
PR(AV)
(W)
0.125
0.075
0.025
0.0
0.05
0.10
0.15
(1)
(2)
(3)
(4)
Tamb (°C)
0 50 100 150 1751257525
006aab717
0.1
0.2
0.3
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 7 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
8. Test information
FR4 PCB, mounting pad for cathode 1 cm2
Tj= 150 °C
(1) δ= 1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
Tj= 150 °C
(1) δ= 1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values Fig 10. Average forward current as a function of
solder point temperature; typical values
Tamb (°C)
0 50 100 150 1751257525
006aab718
0.1
0.2
0.3
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tsp (°C)
0 50 100 150 1751257525
006aab719
0.1
0.2
0.3
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
(1) IR=1mA
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ= 0.05
Oscilloscope: rise time tr= 0.35 ns
Fig 11. Reverse recovery time test circuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50 ΩIF
D.U.T.
Ri = 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 8 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
The current ratings for the typical waveforms as shown in Figure 8,9 and 10 are
calculated according to the equations: with IM defined as peak current,
at DC, and with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package outline
Fig 12. Duty cycle definition
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
IFAV() IMδ×=
IRMS IFAV()
=IRMS IMδ×=
Fig 13. Package outline SOD523 (SC-79)
02-12-13Dimensions in mm
1.65
1.55 1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 9 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 8000 10000
RB521S30 SOD523 2 mm pitch, 8 mm tape and reel - -315 -
4 mm pitch, 8 mm tape and reel -115 - -135
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint SOD523 (SC-79)
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.1
0.7
(2×)
0.8
(2×)
1.2
sod523_fr
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 10 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
RB521S30_1 20091006 Product data sheet - -
RB521S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 11 of 12
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors RB521S30
200 mA low VF MEGA Schottky barrier rectifier
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 October 2009
Document identifier: RB521S30_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
