MOTOROLA SEMICONDUCTOR TECHNICAL DATA MAC15FP Series MAC15AFP Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. ISOLATED TRIACs THYRISTORS 15 AMPERES RMS 200 thru 800 VOLTS * Blocking Voltage to 800 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes (MAC15AFP Series) MT2 MT1 CASE 221C-02 STYLE 3 G MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Symbol Repetitive Peak Off-State Voltage(1) (TJ = -40 to +125C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC15-4FP, MAC15A4FP MAC15-6FP, MAC15A6FP MAC15-8FP, MAC15A8FP MAC15-10FP, MAC15A10FP On-State RMS Current (TC = +80C)(2) Full Cycle Sine Wave 50 to 60 Hz (TC = +95C) Value VDRM Unit Volts 200 400 600 800 IT(RMS) 15 12 Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80C) preceded and followed by rated current ITSM 150 Amps Peak Gate Power (TC = +80C, Pulse Width = 2 s) PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps Average Gate Power (TC = +80C, t = 8.3 ms) Peak Gate Current Peak Gate Voltage RMS Isolation Voltage (TA = 25C, Relative Humidity Operating Junction Temperature Storage Temperature Range p 20%) VGM 10 Volts V(ISO) 1500 Volts TJ -40 to +125 C Tstg -40 to +150 C 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data 3-63 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RJC 2 C/W Thermal Resistance, Case to Sink RCS 2.2 (typ) C/W Thermal Resistance, Junction to Ambient RJA 60 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Peak Blocking Current (Either Direction) TJ = 25C (VD = Rated VDRM, TJ = 125C, Gate Open) Peak On-State Voltage (Either Direction) (ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) Symbol Min Typ Max Unit IDRM -- -- -- -- 10 2 A mA VTM -- 1.3 1.6 Volts Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 k, TJ = +110C) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) "A" SUFFIX ONLY VGT mA -- -- -- -- -- -- -- -- 50 50 50 75 Volts -- -- -- -- 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 -- -- -- -- Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) IH -- 6 40 mA Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) tgt -- 1.5 -- s dv/dt(c) -- 5 -- V/s Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80C) Trigger devices are recommended for gating on Triacs. They provide: QUADRANT DEFINITIONS 1. Consistent predictable turn-on points. MT2(+) QUADRANT II QUADRANT I 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. MT2(+), G(-) MT2(+), G(+) G(-) ELECTRICAL CHARACTERISTICS of RECOMMENDED BIDIRECTIONAL SWITCHES G(+) QUADRANT III QUADRANT IV MT2(-), G(-) MT2(-), G(+) MT2(-) General Usage Part Number MBS4991 MBS4992 VS 6-10 V 7.5-9 V IS 350 A Max 120 A Max VS1-VS2 0.5 V Max 0.2 V Max Temperature Coefficient 0.02%/C Typ 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. 3-64 Motorola Thyristor Device Data IGTM , , GATE TRIGGER CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS TC , CASE TEMPERATURE ( C) 130 30 120 60 90 110 125C 150 to 180 100 dc 90 = CONDUCTION ANGLE 80 0 2 4 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 14 16 3 2 1 0.7 0.5 0.3 -60 50 90 4.4 20 0 2 4 6 8 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 2. On-State Power Dissipation VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) 4 30 4 3 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 10 7 5 3 2 1 0.7 1 0.5 0.7 0.3 0.5 0.2 -40 140 125C 8 = CONDUCTION ANGLE 0.3 -60 120 30 0 100 TJ = 25C 60 i F , INSTANTANEOUS FORWARD CURRENT (AMP) PD(AV) , AVERAGE POWER DISSIPATION (WATTS) dc 12 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (C) 70 120 TJ = 125C -20 100 = 180 16 -40 Figure 4. Typical Gate Trigger Current Figure 1. RMS Current Derating 20 OFF-STATE VOLTAGE = 12 Vdc ALL MODES -20 0 20 40 60 80 100 120 140 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 TJ, JUNCTION TEMPERATURE (C) vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Typical Gate Trigger Voltage Figure 5. Maximum On-State Characteristics Motorola Thyristor Device Data 3-65 300 GATE OPEN APPLIES TO EITHER DIRECTION 2 I TSM , PEAK SURGE CURRENT (AMP) I H , HOLDING CURRENT (NORMALIZED) 3 1 0.7 0.5 0.3 -60 200 100 70 50 TC = 80C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 30 -40 -20 0 20 40 60 80 100 120 2 1 140 TJ, JUNCTION TEMPERATURE (C) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 6. Typical Holding Current 3 5 NUMBER OF CYCLES 7 10 Figure 7. Maximum Nonrepetitive Surge Current 1 0.5 0.2 ZJC(t) = r(t) * RJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) Figure 8. Thermal Response 3-66 Motorola Thyristor Device Data