2N5954 2N5955 2N5956
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6372 2N6373 2N6374 UNITS
Collector-Base Voltage VCBO 90 70 50 V
Collector-Emitter Voltage VCEV 90 70 50 V
Collector-Emitter Voltage VCER 85 65 45 V
Collector-Emitter Voltage VCEO 80 60 40 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 6.0 A
Continuous Base Current IB 2.0 A
Power Dissipation PD 40 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 4.3 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5954 2N5955 2N5956
2N6372 2N6373 2N6374
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICEV V
CE=85V, VBE=1.5V, RBE=100Ω - 100 - - - - μA
ICEV V
CE=65V, VBE=1.5V, RBE=100Ω - - - 100 - - μA
ICEV V
CE=45V, VBE=1.5V, RBE=100Ω - - - - - 100 μA
ICEV V
CE=85V, VBE=1.5V, RBE=100Ω, TC=150°C - 2.0 - - - - mA
ICEV V
CE=65V, VBE=1.5V, RBE=100Ω, TC=150°C - - - 2.0 - - mA
ICEV V
CE=45V, VBE=1.5V, RBE=100Ω, TC=150°C - - - - - 2.0 mA
ICER V
CE=75V - 100 - - - - μA
ICER V
CE=55V - - - 100 - - μA
ICER V
CE=35V - - - - - 100 μA
ICEO V
CE=65V - 1.0 - - - - mA
ICEO V
CE=45V - - - 1.0 - - mA
ICEO V
CE=25V - - - - - 1.0 mA
IEBO V
BE=5.0V - 0.1 - 0.1 - 0.1 mA
BVCEV IC=100mA, VBE=1.5V, RBE=100Ω 90 - 70 - 50 - V
BVCER IC=100mA, RBE=100Ω 85 - 65 - 45 - V
BVCEO IC=100mA 80 - 60 - 40 - V
2N5954 2N5955 2N5956 PNP
2N6372 2N6373 2N6374 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5954 and
2N6372 SERIES types are complementary Silicon
Power Transistors manufactured by the epitaxial base
process, mounted in a hermetically sealed metal case
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R1 (24-November 2010)
www.centralsemi.com
2N5954 2N5955 2N5956 PNP
2N6372 2N6373 2N6374 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
2N5954 2N5955 2N5956
2N6372 2N6373 2N6374
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
VCE(SAT) I
C=2.0A, IB=200mA - 1.0 - - - - V
VCE(SAT) I
C=2.5A, IB=250mA - - - 1.0 - - V
VCE(SAT) I
C=3.0A, IB=300mA - - - - - 1.0 V
VCE(SAT) I
C=6.0A, IB=1.2A (PNP types) - 2.0 - 2.0 - 2.0 V
VBE(ON) V
CE=4.0V, IC=2.0A - 2.0 - - - - V
VBE(ON) V
CE=4.0V, IC=2.5A - - - 2.0 - - V
VBE(ON) V
CE=4.0V, IC=3.0A - - - - - 2.0 V
VBE(ON) V
CE=4.0V, IC=6.0A (NPN types) - 3.0 - 3.0 - 3.0 V
hFE V
CE=4.0V, IC=2.0A 20 100 - - - -
hFE V
CE=4.0V, IC=2.5A - - 20 100 - -
hFE V
CE=4.0V, IC=3.0A - - - - 20 100
hFE V
CE=4.0V, IC=6.0A 5.0 - 5.0 - 5.0 -
hfe V
CE=4.0V, IC=0.5A, f=1.0kHz 25 - 25 - 25 -
fT V
CE=4.0V, IC=1.0A, f=1.0MHz (NPN types) 4.0 - 4.0 - 4.0 - MHz
fT V
CE=4.0V, IC=1.0A, f=1.0MHz (PNP types) 5.0 - 5.0 - 5.0 - MHz
www.centralsemi.com
R1 (24-November 2010)
