IRFP3415
HEXFET® Power MOSFET
S
D
G
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
IDM Pulsed Drain Current 150
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy590 mJ
IAR Avalanche Current22 A
EAR Repetitive Avalanche Energy20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
Thermal Resistance
VDSS = 150V
RDS(on) = 0.042Ω
ID = 43A
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
Description
02/03/03
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
www.irf.com 1
TO-247AC
PD - 93962A
IRFP3415
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V
trr Reverse Recovery Time ––– 260 390 ns TJ = 25°C, IF = 22A
Qrr Reverse RecoveryCharge ––– 2.2 3.3 µC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.042 ΩVGS = 10V, ID = 22A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 19 ––– ––– S VDS = 50V, ID = 22A
––– ––– 25 µA VDS = 150V, VGS = 0V
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 200 ID = 22A
Qgs Gate-to-Source Charge ––– ––– 17 nC VDS = 120V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 98 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 75V
trRise Time ––– 55 ––– ID = 22A
td(off) Turn-Off Delay Time ––– 71 ––– RG = 2.5Ω
tfFall Time ––– 69 ––– RD = 3.3Ω, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 2400 ––– VGS = 0V
Coss Output Capacitance ––– 640 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
VDD = 25V, starting TJ = 25°C, L = 2.4mH
RG = 25Ω, IAS = 22A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
43
150
A
IRFP3415
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
1 10 100
20us PULSE WIDTH
T = 25 C
Jo
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
1 10 100
20us PULSE WIDTH
T = 175 C
Jo
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
o
V =
I =
GS
D
10V
37A
5.0V 5.0V
10
100
1000
45678910
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
IRFP3415
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
1000
2000
3000
4000
5000
6000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
040 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
22A
V = 30V
DS
V = 75V
DS
V = 120V
DS
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
Jo
T = 175 C
Jo
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
Co
o
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRFP3415
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFP3415
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test
Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
200
400
600
800
1000
1200
1400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
o
ID
TOP
BOTTOM
9.0A
16A
22A
IRFP3415
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFP3415
8www.irf.com
TO - 247 Package Outline
LEAD ASSIGNMENTS
NOTES:
- D - 5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
3X 0.80 (.031)
0.40 (.016)
2.60 (.102)
2.20 (.087)
3.40 (.133)
3.00 (.118)
3X
0.25 (.010) MCA
S
4.30 (.170)
3.70 (.145)
- C -
2X 5.50 (.217)
4.50 (.177)
5.50 (.217)
0.25 (.010)
1.40 (.056)
1.00 (.039)
3.65 (.143)
3.55 (.140)
D
MM
B
- A -
15.90 (.626)
15.30 (.602)
- B -
123
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
2X
5.45 (.215)
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/03
Data and specifications subject to change without notice.
